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    TO50 PACKAGE Search Results

    TO50 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    TO50 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking code vishay label

    Abstract: vishay transistor date code sot23 Transistor marking p2 TO50 package TO50 transistor Transistor marking code K marking code diode 04 marking V9 marking code vishay VISHAY SOT23 DATE CODE
    Text: VISHAY Vishay Semiconductors Marking on RF Components SOD80 - QuadroMELF view from top TO50 3 Pin Cathodering 19241 unwind 19244 Label with information of TYPE on reel and package MicroMELF TO50 (4 Pin) view from top Cathodering unwind 19242 Label with information of TYPE on reel and package


    Original     		PDF 15-Nov-04 OT323 OT143R OT343R OT363 OT490 OD523 marking code vishay label vishay transistor date code sot23 Transistor marking p2 TO50 package TO50 transistor Transistor marking code K marking code diode 04 marking V9 marking code vishay VISHAY SOT23 DATE CODE

    SMD Transistors w04

    Abstract: smd transistor w18 w2f smd transistor w18 smd transistor smd transistor w04 SMD Transistor W03 TRANSISTOR w2f sot23 transistor SMD w04 SMD W2f transistor smd transistor marking e5
    Text: Vishay Telefunken Marking on Packages1 view from top Cathodering unwind TO50 3 Pin and TO50 (4 Pin) SOD80 – QuadroMELF Label with information of TYPE on reel and package view from top view from top Cathodering unwind Cathodering unwind SOD80 MiniMELF Label with information of TYPE on reel and package


    Original     		PDF OT143 BFS17W BFS17AW S858TA3 TSDF1205W S503TRW TSDF1220W S504TRW TSDF1250W S505TRW SMD Transistors w04 smd transistor w18 w2f smd transistor w18 smd transistor smd transistor w04 SMD Transistor W03 TRANSISTOR w2f sot23 transistor SMD w04 SMD W2f transistor smd transistor marking e5

    TO50 transistor

    Abstract: TO50 package diode 0102 TO-50 marking code vishay label SOD80 sot23 transistor code marking CODE 32 VISHAY MARKING CODE 32 marking code
    Text: Vishay Semiconductors Marking on RF Components view from top Cathodering TO50 3 Pin unwind SOD80 MiniMELF Label with information of TYPE on reel and package view from top Cathodering TO50 (4 Pin) Document Number 84071 01-02 unwind SOD80 – QuadroMELF Label with information of TYPE on reel and package


    Original     		PDF OT143 OT143R OT323 OT343 OT343R OT363 TO50 transistor TO50 package diode 0102 TO-50 marking code vishay label SOD80 sot23 transistor code marking CODE 32 VISHAY MARKING CODE 32 marking code

    TO50 package

    Abstract: TO-50 to50
    Text: TO-50 4 VISHAY Vishay Semiconductors TO-50(4) Package Dimensions in mm 96 12242 Document Number 84038 Rev. 1.1, 10-Feb-04 www.vishay.com 1 TO-50(4) VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to


    Original     		PDF 10-Feb-04 D-74025 TO50 package TO-50 to50

    TO50 package

    Abstract: TO-50 12244 to50
    Text: TO-50 3 VISHAY Vishay Semiconductors TO-50(3) Package Dimensions in mm 96 12244 Document Number 84039 Rev. 1.1, 10-Feb-04 www.vishay.com 1 TO-50(3) VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to


    Original     		PDF 10-Feb-04 D-74025 TO50 package TO-50 12244 to50

    BF480

    Abstract: R950 Avantek S 2n3570 2SC988
    Text: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Po Max W V(BR)CBO fosc Max Gp Po N.F. at fTest (V) (Hz) (dB) (W) (dB) (Hz) Ic Max (A) Toper MatI. Max (OC) Package Style UHF/Microwave Transistors, Bipolar NPN (Cont'd) 5 10 15 20 2N6619


    Original     		PDF 2N6619 2N6620 BFR15A MA42260-2B7 MM2261-2B7 2N6597 2N6598 BF480 R950 Avantek S 2n3570 2SC988

    TO50 package

    Abstract: TO50 transistor SMD TRANSISTOR sot23 "material composition"
    Text: Vishay Telefunken The Constituents of Semiconductor Components Responsible electronic component and equipment manufacturers are already preparing for the time when the lifespan of their products comes to an end by scrutinizing the materials incorporated and their future


    Original     		PDF

    TO50 package

    Abstract: TBA 611 TO50 transistor SMD TRANSISTOR smd-transistor 1p1n TRANSISTOR SMD catalog germanium diode smd
    Text: Vishay Semiconductors The Constituents of Semiconductor Components Responsible electronic component and equipment manufacturers are already preparing for the time when the lifespan of their products comes to an end by scrutinizing the materials incorporated and their future


    Original     		PDF

    TO50 package

    Abstract: BF966 BF966S
    Text: BF966S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High AGC-range Low feedback capacitance


    Original     		PDF BF966S 2002/95/EC 2002/96/EC BF966S BF966SA BF966SB BF966d D-74025 TO50 package BF966

    BF964

    Abstract: BF964SA BF964S BF964SB TO50 package
    Text: BF964S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance Low input capacitance


    Original     		PDF BF964S BF964SA BF964SB BF964SA BF96s D-74025 BF964 BF964S BF964SB TO50 package

    BF964SA

    Abstract: BF964S BF964SB TO50 package BF964
    Text: BF964S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High AGC-range Low feedback capacitance


    Original     		PDF BF964S 2002/95/EC 2002/96/EC D-74025 15-Apr-05 BF964SA BF964S BF964SB TO50 package BF964

    TO50 package

    Abstract: BF964S
    Text: BF964S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High AGC-range Low feedback capacitance


    Original     		PDF BF964S 2002/95/EC 2002/96/EC BF964S BF964SA BF964SB 08-Apr-05 TO50 package

    BF961

    Abstract: BF961A BF961B TO50 package bf-961
    Text: BF961 Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High AGC-range Low feedback capacitance


    Original     		PDF BF961 2002/95/EC 2002/96/EC 08-Apr-05 BF961 BF961A BF961B TO50 package bf-961

    TO50 package

    Abstract: BF961
    Text: BF961 Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High AGC-range Low feedback capacitance


    Original     		PDF BF961 2002/95/EC 2002/96/EC BF961 BF961A BF961B D-74025 15-Apr-05 TO50 package

    780024Y

    Abstract: 780034Y uPD78054Y uPD78058FY uPD78070AY uPD78078Y uPD78F0034 TO50 package mPD78F0034 PA-FLASH64GC
    Text: DATA SHEET INFORMATION PRELIMINARY PRODUCT MOS INTEGRATED CIRCUIT mPD78F0034 8-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION The m PD78F0034 is a product of the mPD780034 Subseries in the 78K/0 Series and equivalent to the mPD780034 with a flash memory in place of internal ROM.


    Original     		PDF mPD78F0034 PD78F0034 mPD780034 78K/0 mPD780024, 780024Y, 780034Y 780024Y uPD78054Y uPD78058FY uPD78070AY uPD78078Y uPD78F0034 TO50 package mPD78F0034 PA-FLASH64GC

    BF966S

    Abstract: BF966 BF966SA BF966SB TO50 package
    Text: BF966S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High AGC-range Low feedback capacitance


    Original     		PDF BF966S 2002/95/EC 2002/96/EC 08-Apr-05 BF966S BF966 BF966SA BF966SB TO50 package

    BF966SA

    Abstract: BF966S BF966 BF966SB TO50 package MA1300
    Text: BF966S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance Low input capacitance


    Original     		PDF BF966S BF966SA BF966SB BF966SA BF966S D-74025 BF966 BF966SB TO50 package MA1300

    BF988A

    Abstract: BF988B TO50 package
    Text: BF988 Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High gain High AGC-range Low feedback capacitance


    Original     		PDF BF988 2002/95/EC 2002/96/EC BF988 BF988A BF988B D-74025 15-Apr-05 TO50 package

    MEM-539

    Abstract: DxD00 FE9200 hp 1458 uPD780018 uPD78070A uPD78070AY uPD78078 MPD780964 uPD780964
    Text: PRELIMINARY PRODUCT INFORMATION MOS INTEGRATED CIRCUIT mPD78F0964 8-BIT SINGLE-CHIP MICROCONTROLLER The mPD78F0964 is a member of the mPD780964 Subseries of the 78K/0 Series that substitute flash memory for the internal ROM of the mPD780964. Since it is possible to perform program write operation while mounted on a board, it is suited for applications


    Original     		PDF mPD78F0964 mPD78F0964 mPD780964 78K/0 mPD780964. mPD780924, HP9000 MEM-539 DxD00 FE9200 hp 1458 uPD780018 uPD78070A uPD78070AY uPD78078 uPD780964

    nec 78k flash memory write

    Abstract: nec 78k flash memory write function number uPD78F0034Y 780024Y 780034Y uPD78054Y uPD78058FY uPD78070AY uPD78078Y TO50 package
    Text: PRELIMINARY PRODUCT PRELIMINARY PRODUCTINFORMATION INFORMATION MOS INTEGRATED CIRCUIT mPD78F0034Y 8-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION The m PD78F0034Y is a product of the mPD780034Y Subseries in the 78K/0 Series and equivalent to the mPD780034Y with a flash memory in place of internal ROM.


    Original     		PDF mPD78F0034Y PD78F0034Y mPD780034Y 78K/0 mPD78F0034Y mPD780024, 780024Y, 780034Y nec 78k flash memory write nec 78k flash memory write function number uPD78F0034Y 780024Y uPD78054Y uPD78058FY uPD78070AY uPD78078Y TO50 package

    uPD780924

    Abstract: uPD78F0924 hp 1458 uPD780018 uPD78070A uPD78070AY uPD78078 uPD78078Y TO50 package
    Text: PRELIMINARY PRODUCT INFORMATION MOS INTEGRATED CIRCUIT mPD78F0924 8-BIT SINGLE-CHIP MICROCONTROLLER The µPD78F0924 is a member of the mPD780924 Subseries of the 78K/0 Series that substitute flash memory for the internal ROM of the mPD780924. Since it is possible to perform program write operation while mounted on a board, it is suited for applications


    Original     		PDF mPD78F0924 PD78F0924 mPD780924 78K/0 mPD780924. mPD780924, HP9000 uPD780924 uPD78F0924 hp 1458 uPD780018 uPD78070A uPD78070AY uPD78078 uPD78078Y TO50 package

    TO50 package

    Abstract: BF988 BF988A BF988B
    Text: BF988 Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High gain High AGC-range Low feedback capacitance


    Original     		PDF BF988 2002/95/EC 2002/96/EC 08-Apr-05 TO50 package BF988 BF988A BF988B

    smd-transistor DATA BOOK

    Abstract: rele smd sod-80 SMD TBA 860 TO50 package carbon and its compounds DO220 smd-transistor TRANSISTOR SMD catalog TBA 611
    Text: Vishay Semiconductors The Constituents of Semiconductor Components Responsible electronic component and equipment manufacturers are already preparing for the time when the lifespan of their products comes to an end by scrutinizing the materials incorporated and their future


    Original     		PDF

    BF988A

    Abstract: BF988 BF988B TO50 package
    Text: BF988 Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High gain High AGC-range Low feedback capacitance


    Original     		PDF BF988 BF988A BF988B BF988A BF988s D-74025 25-Nov-04 BF988 BF988B TO50 package