PMLL4148
Abstract: PMLL4148L PMLL4448
Text: PMLL4148L; PMLL4448 High-speed switching diodes Rev. 07 — 31 January 2007 Product data sheet 1. Product profile 1.1 General description Single high-speed switching diodes, fabricated in planar technology, and encapsulated in small hermetically sealed glass SOD80C Surface-Mounted Device SMD packages.
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PMLL4148L;
PMLL4448
OD80C
PMLL4148L
OD80C
PMLL4148L
PMLL4448
PMLL4148
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smd diode code BAS85
Abstract: 12NC ordering code nxp data sheet for all smd components nxp Standard Marking BAS85
Text: BAS85 Schottky barrier diode Rev. 6 — 10 September 2010 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a small hermetically sealed glass SOD80C Surface-Mounted
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BAS85
OD80C
smd diode code BAS85
12NC ordering code nxp
data sheet for all smd components
nxp Standard Marking
BAS85
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MSA435
Abstract: PMLL4148 PMLL4148L PMLL4448 MSA461
Text: PMLL4148L; PMLL4448 High-speed switching diodes Rev. 06 — 4 April 2005 Product data sheet 1. Product profile 1.1 General description Single high-speed switching diodes, fabricated in planar technology, and encapsulated in small hermetically sealed glass SOD80C SMD packages.
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PMLL4148L;
PMLL4448
OD80C
PMLL4148L
OD80C
MSA435
PMLL4148
PMLL4148L
PMLL4448
MSA461
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nTC Thermistor 100-7
Abstract: NTCSMELFE3103JT
Text: 2381 633 5./NTCSMELFE3.T Vishay BCcomponents SMD MELF SOD80, Glass Encapsulated NTC Thermistor FEATURES • Small diameter down to 1.7 mm • Quick response time down to 0.9 s • Wide temperature range from - 40 °C to + 150 °C • Resistant to corrosive atmospheres and harsh
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2002/95/EC
2002/96/EC
B25/85
RT/R25
18-Jul-08
nTC Thermistor 100-7
NTCSMELFE3103JT
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MSA435
Abstract: BAS32L
Text: BAS32L High-speed switching diode Rev. 04 — 22 March 2005 Product data sheet 1. Product profile 1.1 General description Single high-speed switching diode, fabricated in planar technology, and encapsulated in a small hermetically sealed glass SOD80C SMD package.
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BAS32L
OD80C
MSA435
BAS32L
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minimelf SOD80
Abstract: BA679 BA679-GS08 BA679-GS18 BA679S BA679S-GS08 BA679S-GS18
Text: BA679/BA679S Vishay Semiconductors RF PIN Diodes - Single in MiniMELF SOD80 Features • Wide frequency range 10 MHz to 1 GHz • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC e2 Applications • Current controlled HF resistance in adjustable
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BA679/BA679S
2002/95/EC
2002/96/EC
GS18/10
GS08/2
BA679
BA679-GS18
BA679-GS08
BA679S
BA679S-GS18
minimelf SOD80
BA679
BA679-GS08
BA679S
BA679S-GS08
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minimelf SOD80
Abstract: No abstract text available
Text: MiniMELF SOD80 Vishay Semiconductors MiniMELF SOD80 Package Dimensions in mm Inches 96 12070 Document Number 84013 Rev. 1.3, 12-Jan-07 www.vishay.com 1 MiniMELF SOD80 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to
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12-Jan-07
D-74025
minimelf SOD80
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mini-melf with white band
Abstract: JEDEC DO-213AC FDH 400 FAIRCHILD DIODE A333
Text: FDH / FDLL 300 / A / 333 High Contraction Low Leakage Diode Cathode Band LL-34 COLOR BAND MARKING DEVICE SOD80 LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL Cathode is denoted with a black band 1ST BAND
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LL-34
FDLL300
FDLL300A
FDLL333
DO-35
mini-melf with white band
JEDEC DO-213AC
FDH 400
FAIRCHILD DIODE
A333
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Fagor triacs
Abstract: fd0230
Text: FD02.YM Surface Mount D I A C SOD80C / MINIMELF BREAKOVER VOLTAGE 32 V ON-STATE CURRENT 2.0 Amps FEATURES Glass hermetically sealed Ideal for automated placement Low breakover current Silicon Bidirectional with excellent symmetry Very low leakage current
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OD80C
2002/95/EC
2002/96/EC
J-STD-020,
MIL-STD-750
J-STD-002
JESD22-B102.
fd02xxym
Apr-12
Fagor triacs
fd0230
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A08 smd
Abstract: A08 smd transistor MGD006 MBG464 SOD-80C LL4148L
Text: Preliminary LL4148L Pb 500mW Hermetically Sealed Glass Fast Switching Diodes RoHS COMPLIANCE SOD80C Features Small hermetically sealed glass SMD package High switching speed: max. 4 ns Continuous reverse voltage: Max. 75V Repetitive peak reverse voltage:
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LL4148L
500mW
OD80C
450mA
LL4148L)
MGD006
MGD004
A08 smd
A08 smd transistor
MGD006
MBG464
SOD-80C
LL4148L
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Untitled
Abstract: No abstract text available
Text: BAS85 Schottky barrier diode Rev. 6 — 10 September 2010 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a small hermetically sealed glass SOD80C Surface-Mounted
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BAS85
OD80C
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Untitled
Abstract: No abstract text available
Text: BAS32L High-speed switching diode Rev. 7 — 20 January 2011 Product data sheet 1. Product profile 1.1 General description Single high-speed switching diode, fabricated in planar technology, and encapsulated in a small hermetically sealed glass SOD80C Surface-Mounted Device SMD package.
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BAS32L
OD80C
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SMD Diode V6 marking code
Abstract: BAS32l diode marking v6 NXP MARKING V4
Text: BAS32L High-speed switching diode Rev. 7 — 20 January 2011 Product data sheet 1. Product profile 1.1 General description Single high-speed switching diode, fabricated in planar technology, and encapsulated in a small hermetically sealed glass SOD80C Surface-Mounted Device SMD package.
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BAS32L
OD80C
SMD Diode V6 marking code
BAS32l
diode marking v6
NXP MARKING V4
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b14 smd diode
Abstract: DIODE SMD b14
Text: LL4148L 500mW Hermetically Sealed Glass Fast Switching Diodes Small Signal Product Features SOD80C ◇ Small hermetically sealed glass SMD package ◇ High switching speed : Max. 4 ns ◇ Continuous reverse voltage : Max. 75V ◇ Repetitive peak reverse voltage :
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LL4148L
500mW
OD80C
b14 smd diode
DIODE SMD b14
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BA980
Abstract: BA980-GS08 BA980-GS18
Text: BA980 Vishay Semiconductors RF PIN Diode - Single in QuadroMELF SOD80 Features • Wide frequency range 10 MHz to 1 GHz • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC e2 9612009 Applications • Current controlled HF resistance in adjustable
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BA980
2002/95/EC
2002/96/EC
GS18/10
GS08/2
BA980-GS18
BA980-GS08
08-Apr-05
BA980
BA980-GS08
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Untitled
Abstract: No abstract text available
Text: FD02.YM Surface Mount D I A C SOD80C / MINIMELF BREAKOVER VOLTAGE 32 V ON-STATE CURRENT 2.0 Amps FEATURES Glass hermetically sealed Ideal for automated placement Low breakover current Silicon Bidirectional with excellent symmetry Very low leakage current
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OD80C
2002/95/EC
2002/96/EC
J-STD-020,
MIL-STD-750
J-STD-002
JESD22-B102.
fd02xxym
Feb-12
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Untitled
Abstract: No abstract text available
Text: BAS86 Schottky barrier diode Rev. 4 — 8 September 2010 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier diode with an integrated guard ring against static discharges. This surface-mounted device is encapsulated in a small hermetically sealed SOD80C glass
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BAS86
OD80C
771-BAS86-T/R
BAS86
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Untitled
Abstract: No abstract text available
Text: LL4148 Small Signal Diode COLOR BAND MARKING 1ST BAND Black SOD80 2ND BAND Green The 1st Band indicates the cathode band Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Symbol Parameter Value Units VRRM IF AV if IFSM Maximum Repetitive Reverse Voltage
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LL4148
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Untitled
Abstract: No abstract text available
Text: Small Signal Diodes SOD80 Mini Melf Type miniReel Order Number Switching type, General Purpose BAV100 BAVI 01 BAV102 BAVI 03 LL914 LL4148 LL4150 LL4151 LL4154 LL4448 70-0100 c fif\ 70-0101 SOU p c . LL101A LL101B LL101C LL103A LL103B LL103C Reel 70-0102 50-0100 r/1/1
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BAV100
BAV102
LL914
LL4148
LL4150
LL4151
LL4154
LL4448
LL101A
LL101B
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Untitled
Abstract: No abstract text available
Text: Direction Of Feed O 0|0j0|0|0|0|0 Polarized Components □DODDODD Direction Of Feed o o o • o o o mm Bm mSmm m Tjgjl □ □ □ H SOT143 SOT25 1, . igg igj vg g g \ $ S J O O O O Q~Ol \o O O o1 SOT23 Crystal )Q Cathode O /o"5 Melf &SOD80 o ooooo G O O
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OT143
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triacs bt 12
Abstract: bt136 600e triacs bt 16
Text: Philips Semiconductors Selection Guide Thyristors and Triacs SILICON BIDIRECTIONAL TRIGGER DEVICES Ifrm V|BO ' BO) TY P E NUM BER EN VELO PE (A) (V) (V) 2 2 8 -3 6 50 nA BR100/03 SOD27 2 2 8 -3 6 50 nA BR100/LLD SOD80 STANDARD THYRISTORS It(AV) V qRMi V rrm
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BR100/03
BR100/LLD
BT300-500
BT300-600
BT300-800
O220AB
BT151F-500
BT151F-650
BT151F-B00
OT186
triacs bt 12
bt136 600e
triacs bt 16
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Untitled
Abstract: No abstract text available
Text: APX btsaiai 0025746 711 N AUER PHILIPS/DISCRETE BZV87 b7E D J V LOW VOLTAGE STABISTORS FOR SURFACE MOUNTING Silicon planar integrated voltage regulator diodes in hermetically sealed SOD80 glass envelopes, intended fo r low power clipping, level shifting, voltage regulation, temperature stabilization of
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BZV87
DD25750
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Untitled
Abstract: No abstract text available
Text: PMLL4148 PMLL4446 PMLL4448 bhSBTBl DD25T12 32fl « A P X N AflER PHILIPS/DISCRETE b7E » J V HIGH-SPEED SILICON DIODES FOR SURFACE MOUNTING These diodes are prim arily designed for fast logic applications. These SM diodes are leadless diodes in a hermetically sealed SOD80C envelope w ith tin-plated metal
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PMLL4148
PMLL4446
PMLL4448
DD25T12
OD80C
PMLL414e
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Untitled
Abstract: No abstract text available
Text: b b S S ' m 0024363 2T5 « A P X N AMER PHILIPS/DISCRETE BAV105 b?E D J V ULTRA HIGH-SPEED DIODE Silicon planar epitaxial, ultra-high speed, high conductance diode in a SOD80C envelope. QUICK REFERENCE DATA Continuous reverse voltage VR max. Repetitive peak reverse voltage
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BAV105
OD80C
oo343f
7ZI0677
00243AT
100iL
400mA
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