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    TO252 Search Results

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    TO252 Price and Stock

    Artekit Labs DA-TO252-5-P114

    TO252-5 (DPAK 5-6 PINS) ADAPTER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DA-TO252-5-P114 Bulk 315 1
    • 1 $2.27
    • 10 $2.27
    • 100 $1.3256
    • 1000 $1.13625
    • 10000 $1.13625
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    Artekit Labs DA-TO252-P233

    TO252 (DPAK 3-4 PINS) ADAPTER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DA-TO252-P233 Bulk 1
    • 1 $2.12
    • 10 $2.12
    • 100 $1.2372
    • 1000 $1.0605
    • 10000 $1.0605
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    Nextgen Components TO252MDD7N65DS

    MOSFET TO-252 N 650V 7A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TO252MDD7N65DS Reel 2,500
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.9858
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    Nextgen Components TO252MDD4N65DS

    MOSFET TO-252 N 650V 4A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TO252MDD4N65DS Reel 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.8685
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    JST Manufacturing APLMK-STO25-250N

    APP/DIE SET FOR JST PRESS APK2N
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APLMK-STO25-250N Bulk
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    TO252 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TO-252 Harris Semiconductor HARRIS HYPER-FAST RECOVERY RECTIFIER PRODUCT LINE Original PDF
    TO-252 Unknown TO-252 (MP-3Z) Original PDF
    TO252-3 Unknown Original PDF
    TO252-5 Unknown Original PDF
    TO-25-250E Bivar Wash-Away Spacers - Wash-Away Component and General Purpose Spacers Original PDF
    TO-25-250E Bivar Component Insulators, Mounts, Spacers, Hardware, Fasteners, Accessories, SPACER WASHAWAY Original PDF
    TO-252AA Harris Semiconductor HARRIS HYPER-FAST RECOVERY RECTIFIER PRODUCT LINE Original PDF
    TO-252AA Package International Rectifier Case Outline and Dimensions Original PDF
    TO-252AA Package International Rectifier Case Outline and Dimensions Original PDF
    TO-252AA Package Intersil SURFACE MOUNT JEDEC TO-252AA PLASTIC PACKAGE Original PDF
    TO-252AA Package Intersil 16mm TAPE AND REEL Original PDF
    TO252C-3 ROHM Lsi Assembly Original PDF
    TO252C-5 ROHM Lsi Assembly Original PDF
    TO-252 Package Intersil 2 LEAD SURFACE MOUNT JEDEC TO-252 PLASTIC PACKAGE (FOR RECTIFIERS ONLY) Original PDF
    TO-252 Package Intersil 16mm TAPE AND REEL Original PDF

    TO252 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4N06L30

    Abstract: IPD25N06S4L-30 4N06L
    Text: IPD25N06S4L-30 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max 30 mΩ ID 25 A Features PG-TO252-3-11 • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)


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    PDF IPD25N06S4L-30 PG-TO252-3-11 PG-TO252-3-11 4N06L30 726-IPD25N06S4L-30 4N06L30 IPD25N06S4L-30 4N06L

    Untitled

    Abstract: No abstract text available
    Text: PACKAGE DIMENSIONS TO252 5Pin -DL3 2.29±0 .09 1.14 ± 0. 13 6. 54 ±0.19 0.52 ±0. 06 6 .04 ± 0.0 6 5 .34 ±0.1 2 0 . 5 ± 0. 1 2 1 . 27 0 .52 ±0.0 6 0. 51 2.5 ± 0. 5 0 ~0.2 5 MI N4.15 (1.7) (1.4) (0.9) 5. 34 ±0.12 (2.5) (4.8) GD-X00501M-0 Ver.2005-03-15


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    PDF GD-X00501M-0

    Untitled

    Abstract: No abstract text available
    Text: パッケージ外形図 TO252 3Pin 1 . 14 ± 0. 1 3 6 . 5 4 ±0. 1 9 0.52 ±0 . 0 6 1 (0 ~ 10゚) 3 0.76 ±0 . 1 2 0 . 52 ±0 . 0 6 2.28 0. 51 2 0.76 ±0. 12 0 ~0 . 2 5 2.5±0.5 0.83 ±0.19 6 . 0 4 ±0 . 06 5 . 3 4 ±0 . 1 2 2.29±0 . 0 9 2 .2 8 4.15 ~4.50


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Package : TO252-5 1. Embossed Carrier Tape 1.5 0 13.5 2.9 Max 1.5 Min Material : Polycarbonate + Carbon Static Protection : Conductive 16.0 ±0.3 +0.1 2.0 ±0.1 10.5 ±0.1 0.3 ±0.05 1.75 ±0.1 4.0 ±0.1 7.5 ±0.1 2.7 ±0.1 (Unit : mm) 8.0 ±0.1 6.9 ±0.1


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    PDF O252-5

    04N80C3

    Abstract: PG-TO252-3-11 Q47040-S4563 SPD04N80C3 INFINEON marking
    Text: SPD04N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 1.3 Ω ID 4 A PG-TO252 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


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    PDF SPD04N80C3 PG-TO252 Q47040-S4563 04N80C3 04N80C3 PG-TO252-3-11 Q47040-S4563 SPD04N80C3 INFINEON marking

    00bc0w

    Abstract: BA50BC0FP ba50bc0 BA33BC0FP 18bc0w 50bc0w BA33BC0 33bc0w BA30BC0 ba60bc0
    Text: BA BC0 series Regulator ICs 1A Low-Dropout Voltage Regulator with Low Saturation BA BC0 series BA BC0 series offers a line of low saturation type regulators that can supply as low output current as 1A. The output voltage precision appears ±2%. By the lineup of output voltage, the package lineup of surface mounted TO252 and


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    PDF O220FP) 00bc0w BA50BC0FP ba50bc0 BA33BC0FP 18bc0w 50bc0w BA33BC0 33bc0w BA30BC0 ba60bc0

    SP*02N60

    Abstract: P-TO252 SPD02N60 SPU02N60
    Text: SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated Type VDS ID SPD02N60 600 V 2 A SPU02N60 Pin 1 Pin 2 Pin 3 G D S RDS on @ VGS Package VGS = 10 V P-TO252 5.5 Ω P-TO251 Maximum Ratings, at T j = 25 °C, unless otherwise specified


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    PDF SPD02N60 SPU02N60 P-TO252 P-TO251 Q67040-S4133 Q67040-S4127-A2 SP*02N60 P-TO252 SPD02N60 SPU02N60

    1117-33

    Abstract: regulator 17-33 1117-3.3 1117 3.3 1117-ADJ AP1117 AP1117-ADJ 1117 voltage regulator
    Text: AP1117 1A Low Dropout Positive Adjustable or Fixed-Mode Regulator „ Features „ General Description - 1.4V maximum dropout at full load current - Fast transient response - Output current limiting - Built-in thermal shutdown - Packages: SOT223, TO263, TO252, TO220,


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    PDF AP1117 AP1117 1117-33 regulator 17-33 1117-3.3 1117 3.3 1117-ADJ AP1117-ADJ 1117 voltage regulator

    DXT2010

    Abstract: DXT2010P5 DXT2010P5-13
    Text: A Product Line of Diodes Incorporated DXT2010P5 ADVANCE INFORMATION 60V NPN MEDIUM POWER TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm Rated up to 3.2W


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    PDF DXT2010P5 OT223; J-STD-020 MIL-STD-202, DS32011 DXT2010 DXT2010P5 DXT2010P5-13

    DXT2012

    Abstract: DXT2012P5 DXT2012P5-13 sot223 code r1k
    Text: A Product Line of Diodes Incorporated DXT2012P5 ADVANCE INFORMATION 60V PNP MEDIUM POWER TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm Rated up to 3.2W


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    PDF DXT2012P5 OT223; J-STD-020 MIL-STD-202, DS32070 DXT2012 DXT2012P5 DXT2012P5-13 sot223 code r1k

    DTP3200B

    Abstract: DXTP03200BP5 DXTP03200BP5-13
    Text: A Product Line of Diodes Incorporated DXTP03200BP5 ADVANCE INFORMATION 200V PNP HIGH VOLTAGE TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm Rated up to 3.2W


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    PDF DXTP03200BP5 OT223; -200V J-STD-020 MIL-STD-202, DS32068 DTP3200B DXTP03200BP5 DXTP03200BP5-13

    3010KM

    Abstract: SI-3012KM SI-3018KM SI-3025KM SI-3033KM
    Text: 1-1-1 Linear Regulator ICs SI-3000KM Series Surface Mount, Low Current Consumption, Low Dropout Voltage Linear Regulator ICs •Features ■Absolute Maximum Ratings Ta=25°C • Compact surface mount package (TO252-5) Ratings Parameter • Low dropout voltage: VDIF ≤ 0.6 V (at IO = 1.0


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    PDF SI-3000KM O252-5) SI-3010KM/3050KM/ 3090KM/3120KM SI-3012KM/3018KM 3025KM/3033KM 3010KM SI-3012KM SI-3018KM SI-3025KM SI-3033KM

    AN 7274

    Abstract: Q67006-A9728 AEB03613 AEP02281 AEP02512 P-TO252-3-11
    Text: 5-V Low Drop Voltage Regulator TLE 7274 Features • • • • • • Output voltage 5 V ±2% Ultra low current consumption: typ. 20µA 300 mA current capability Very low-drop voltage Short-circuit-proof Suitable for use in automotive electronics P-TO252-3-1


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    PDF P-TO252-3-1 P-TO263-3-1 AN 7274 Q67006-A9728 AEB03613 AEP02281 AEP02512 P-TO252-3-11

    16cn10n

    Abstract: 16cn10 IPP16CN10N D53A PG-TO220-3 16CN1
    Text: OptiMOS 2 Power-Transistor IPB16CN10N G IPD16CN10N G IPI16CN10N G IPP16CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 16 mΩ ID 53 A • Very low on-resistance R DS(on)


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    PDF IPB16CN10N IPI16CN10N IPD16CN10N IPP16CN10N PG-TO263-3 PG-TO252-3 16cn10n 16cn10 D53A PG-TO220-3 16CN1

    f100 150 5

    Abstract: No abstract text available
    Text: 1-1-1 Linear Regulator ICs SI-3000KM Series Surface Mount, Low Current Consumption, Low Dropout Voltage Linear Regulator ICs •Features ■Absolute Maximum Ratings Ta=25°C • Compact surface mount package (TO252-5) Ratings Parameter • Low dropout voltage: VDIF ≤ 0.6 V (at IO = 1.0


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    PDF SI-3000KM O252-5) SI-3010KM/SI-3050KM/SI3090KM/SI-3120KM) SI3012KM/SI-3018KM/SI-3025KM/SI-3033KM) f100 150 5

    2N0640

    Abstract: BSPD25N06S2-40 SPD25N06S2-40 a6024
    Text: SPD25N06S2-40 OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 V RDS on 40 m ID 29 A P- TO252 -3-11 Type Package Ordering Code SPD25N06S2-40 P- TO252 -3-11 Q67060-S7427


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    PDF SPD25N06S2-40 Q67060-S7427 2N0640 BSPD25N06S2-40, SPD25N06S2-40 2N0640 BSPD25N06S2-40 a6024

    TO252C-3

    Abstract: No abstract text available
    Text: TO252C-3 LSI Assembly Units : mm • TO252C-3 1.5 6.5 5.1 5.5 FIN 0.65 2 3 0.8 1 0.65 0.75 2.3 2.3 H=1.3Max. The contents described herein are subject to change without notice. Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any


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    PDF O252C-3 TO252C-3

    04N60C3

    Abstract: 04N60C 04N60 SPU04N60C3 P-TO252 SDP06S60 SPD04N60C3
    Text: SPD04N60C3 SPU04N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO251 P-TO252 • Extreme dv/dt rated • High peak current capability


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    PDF SPD04N60C3 SPU04N60C3 P-TO251 P-TO252 Q67040-S4412 04N60C3 04N60C3 04N60C 04N60 SPU04N60C3 P-TO252 SDP06S60 SPD04N60C3

    02N60C3

    Abstract: 02N60 Q67040-S4420 GPT09051 P-TO252 SPD02N60C3 SPU02N60C3 02N6
    Text: SPD02N60C3 SPU02N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO251 P-TO252 • Extreme dv/dt rated • Ultra low effective capacitances


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    PDF SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 Q67040-S4420 02N60C3 02N60C3 02N60 Q67040-S4420 GPT09051 P-TO252 SPD02N60C3 SPU02N60C3 02N6

    Untitled

    Abstract: No abstract text available
    Text: パッケージ外形図 1 . 1 4 ±0 . 1 3 TO252 3Pin 6 .5 4 ± 0. 1 9 0.52 ±0.06 1 ( 0 ~ 10 ゚) 3 0.76 ± 0 . 1 2 0.52 ±0.06 2.28 0. 51 2 0.76 ±0.12 0 ∼0.25 2.5±0.5 0.83 ± 0.1 9 6.04 ±0.06 5.34 ±0.12 2.29±0.09 2.28 MIN4.15 ( 1. 7) ( 1. 4) ( 0. 9)


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    PDF

    IEC61249-2-21

    Abstract: IPP26CNE8N 25CNE8N
    Text: IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)


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    PDF IPB26CNE8N IPD25CNE8N IPI26CNE8N IPP26CNE8N IPU25CNE8N IEC61249-2-21 IEC61249-2-21 25CNE8N

    IPB26CN10NG

    Abstract: IPI26CN10NG IPP26CN10NG IEC61249-2-21 IPB26CN10N IPI26CN10N IPP26CN10N ds 1-08 diode
    Text: IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)


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    PDF IPB26CN10N IPD25CN10N IPI26CN10N IPP26CN10N IEC61249-2-21 PG-TO263-3 IPB26CN10NG IPI26CN10NG IPP26CN10NG IEC61249-2-21 ds 1-08 diode

    Untitled

    Abstract: No abstract text available
    Text: SPD30N03S2L-10 OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level VDS 30 V R DS on 10 m ID 30 A P- TO252 -3-11  Low On-Resistance RDS(on)  Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance


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    PDF SPD30N03S2L-10 Q67042-S4030 2N03L10 BSPD30N03S2L-10, SPD30N03S2L-10

    g51 smd

    Abstract: 3N06L08 PG-TO252-3-11 ANPS071E IPD50N06S3L-08 GD15-0 3N06L
    Text: IPD50N06S3L-08 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 7.8 mΩ ID 50 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature


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    PDF IPD50N06S3L-08 PG-TO252-3-11 3N06L08 g51 smd 3N06L08 PG-TO252-3-11 ANPS071E IPD50N06S3L-08 GD15-0 3N06L