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    TIP127 TEXAS Search Results

    TIP127 TEXAS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54HC158/BEA Rochester Electronics LLC Replacement for Texas Instruments part number 5962-8682301EA. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    74167N Rochester Electronics Replacement for Texas Instruments part number SN74167N. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics Buy
    74LS626N Rochester Electronics LLC Replacement for Texas Instruments part number SN74LS626N. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    54184J/B Rochester Electronics LLC Replacement for Texas Instruments part number SNJ54184J. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    54ALS113AJ/B Rochester Electronics LLC Replacement for Texas Instruments part number SNJ54ALS113AJ. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy

    TIP127 TEXAS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    tip122 tip127 audio amp

    Abstract: TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT BD226-BD227 tip122 tip127 audio board D45H111 3904 Transistor BU108 tip120 darlington TIP41 amplifier TIP121 TEXAS
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 Typ @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc


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    PDF TIP120, TIP125 TIP121, TIP126 TIP122, TIP127 220AB tip122 tip127 audio amp TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT BD226-BD227 tip122 tip127 audio board D45H111 3904 Transistor BU108 tip120 darlington TIP41 amplifier TIP121 TEXAS

    2Sd331 npn transistor

    Abstract: 724 motorola NPN Transistor with collector heat pad BU108 2SA1046 MJ15003 300 watts amplifier MOTOROLA MJD122 application note ST T4 3580 724 motorola NPN Transistor with heat pad BDX54 BU326
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD122* PNP MJD127* Complementary Darlington Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS


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    PDF 2N6040 2N6045 TIP120 TIP122 TIP125 TIP127 MJD122* MJD127* TIP73B TIP74 2Sd331 npn transistor 724 motorola NPN Transistor with collector heat pad BU108 2SA1046 MJ15003 300 watts amplifier MOTOROLA MJD122 application note ST T4 3580 724 motorola NPN Transistor with heat pad BDX54 BU326

    tip122 tip127 audio amp schematic

    Abstract: BU108 2Sd331 npn transistor pin configuration PNP transistor tip42c 2sa940 2sc2073 724 motorola NPN Transistor with heat pad MJE711 tip122 tip127 audio amp D45H11 equivalent replacement BU326
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJF122 PNP MJF127 Complementary Power Darlingtons For Isolated Package Applications Designed for general–purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


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    PDF MJF122 MJF127 TIP122 TIP127 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 tip122 tip127 audio amp schematic BU108 2Sd331 npn transistor pin configuration PNP transistor tip42c 2sa940 2sc2073 724 motorola NPN Transistor with heat pad MJE711 tip122 tip127 audio amp D45H11 equivalent replacement BU326

    MJ3001 equivalent

    Abstract: MJ3000 equivalent 2sc1096 equivalent BU108 MJ3000 circuit MJ2955 2n3055 200 watts amplifier BDX54 MJ2501 MJ2955 replacement 2n3055 replacement
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ2955 See 2N3055 MJ2955A (See 2N3055A) Medium-Power Complementary Silicon Transistors MJ2500 . . . for use as output devices in complementary general purpose amplifier applications. MJ2501* • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc


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    PDF MJ2955 2N3055) MJ2955A 2N3055A) MJ2500 MJ2501* MJ3000 MJ3001* TIP73B TIP74 MJ3001 equivalent MJ3000 equivalent 2sc1096 equivalent BU108 MJ3000 circuit MJ2955 2n3055 200 watts amplifier BDX54 MJ2501 MJ2955 replacement 2n3055 replacement

    motorola MJ15001

    Abstract: BU108 equivalent to tip162 BDX54 D45H11 equivalent replacement 2sd217 BU326 BU100 REPLACEMENT BD139
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Transistors NPN MJ15001 PNP MJ15002 The MJ15001 and MJ15002 are EpiBase power transistors designed for high power audio, disk head positioners and other linear applications. • High Safe Operating Area 100% Tested —


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    PDF MJ15001 MJ15002 MJ15002 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A motorola MJ15001 BU108 equivalent to tip162 BDX54 D45H11 equivalent replacement 2sd217 BU326 BU100 REPLACEMENT BD139

    TIP142 TRANSISTOR REPLACEMENT

    Abstract: replacement for TIP147 high end amplifier schematics 2n3055 pin configuration NPN transistor tip41c BDW51C schematics TIP142 TIP147 BD262 DARLINGTON 2N6022 BU108 transistor tip142
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP140 TIP141* TIP142* PNP TIP145 TIP146* TIP147* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V


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    PDF TIP140, TIP145 TIP141, TIP146 TIP142, TIP147 TIP73B TIP74 TIP74A TIP74B TIP142 TRANSISTOR REPLACEMENT replacement for TIP147 high end amplifier schematics 2n3055 pin configuration NPN transistor tip41c BDW51C schematics TIP142 TIP147 BD262 DARLINGTON 2N6022 BU108 transistor tip142

    2SC105

    Abstract: 2sd718 amplifier 2N4923 MOTOROLA bd139 equivalent transistor 2SA1046 2SC1629 equivalent bd139 Complement ST BDW83C 2SC108 BU326A equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N4921 thru 2N4923* Medium-Power Plastic NPN Silicon Transistors . . . designed for driver circuits, switching, and amplifier applications. These high–performance plastic devices feature: *Motorola Preferred Device • Low Saturation Voltage — VCE sat = 0.6 Vdc (Max) @ IC = 1.0 Amp


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    PDF 2N4918, 2N4919, 2N4920 2N4921 2N4923* TIP73B TIP74 TIP74A TIP74B TIP75 2SC105 2sd718 amplifier 2N4923 MOTOROLA bd139 equivalent transistor 2SA1046 2SC1629 equivalent bd139 Complement ST BDW83C 2SC108 BU326A equivalent

    All similar transistor 2sa715

    Abstract: 2N3055 BU108 transistor BC 153 2SA1046 BU326 BU100 Transistor cross reference
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD243B BD243C* PNP BD244B BD244C* Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE sat = 1.5 Vdc (Max) @ IC = 6.0 Adc


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    PDF BD243B, BD244B BD243C, BD244C BD243B BD243C* BD244C* TIP73B TIP74 All similar transistor 2sa715 2N3055 BU108 transistor BC 153 2SA1046 BU326 BU100 Transistor cross reference

    BU108

    Abstract: 2SC1629 equivalent BDX54 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX41 SWITCHMODE Series NPN Silicon Power Transistor 15 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 120 WATTS . . . designed for high speed, high current, high power applications. • Very fast switching times:


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    PDF BUX41 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 2SC1629 equivalent BDX54 BU326 BU100

    2SA1046

    Abstract: 380 darlington to3 ibm REPLACEMENT BD139 BU326 BU108 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX85 SWITCHMODE NPN Silicon Power Transistors 2 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS 50 WATTS The BUX85 is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems.


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    PDF BUX85 BUX85 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2SA1046 380 darlington to3 ibm REPLACEMENT BD139 BU326 BU108 BU100

    mje15033 replacement

    Abstract: BU108 TIP41B MJE2482 x 0602 ma 2SC1419 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE341 MJE344 Plastic NPN Silicon Medium-Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON 150 – 200 VOLTS 20 WATTS . . . useful for medium voltage applications requiring high fT such as converters and extended range amplifiers.


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    PDF MJE341 MJE344 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B mje15033 replacement BU108 TIP41B MJE2482 x 0602 ma 2SC1419 BU326 BU100

    BU108

    Abstract: TIP105 Darlington transistor BDX54 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE2360T MJE2361T NPN Silicon High-Voltage Transistor 0.5 AMPERE POWER TRANSISTORS NPN SILICON 350 VOLTS 30 WATTS . . . useful for general–purpose, high voltage applications requiring high fT. • Collector–Emitter Sustaining Voltage —


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    PDF MJE2361T MJE2360T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BU108 TIP105 Darlington transistor BDX54 BU326 BU100

    MJ15023 EQUIVALENT

    Abstract: MJ15024 MJ15025 BU108 2SC1943 2SC1419 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ15023 MJ15025 * Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. *Motorola Preferred Device • High Safe Operating Area 100% Tested —


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    PDF MJ15023 MJ15025 MJ15025 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A MJ15023 EQUIVALENT MJ15024 MJ15025 BU108 2SC1943 2SC1419 BU326 BU100

    mje15033 replacement

    Abstract: BD262 DARLINGTON 2SB554 replacement 2sc1079 replacement 2SD323 2N6254 REPLACEMENT BD262A DARLINGTON MJ2955 replacement 2SC1013 replacement 2n3055 replacement
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6576 2N6577 2N6578 NPN Silicon Power Darlington Transistors General–purpose EpiBase power Darlington transistors, suitable for linear and switching applications. • • • • • • Replacement for 2N3055 and Driver


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    PDF 2N3055 2N6576 2N6577 2N6578 TIP73B TIP74 TIP74A TIP74B TIP75 mje15033 replacement BD262 DARLINGTON 2SB554 replacement 2sc1079 replacement 2SD323 2N6254 REPLACEMENT BD262A DARLINGTON MJ2955 replacement 2SC1013 replacement 2n3055 replacement

    bd135 TRANSISTOR REPLACEMENT GUIDE

    Abstract: transistor Bd 458 transistor BC 56 2N5981 pnp transistor BD135-BD137-BD139 BD139 PIN DATA BU108 transistor BD 325 BD139-25 mje13005 complementary
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc


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    PDF BD135 BD137 BD139 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B bd135 TRANSISTOR REPLACEMENT GUIDE transistor Bd 458 transistor BC 56 2N5981 pnp transistor BD135-BD137-BD139 BD139 PIN DATA BU108 transistor BD 325 BD139-25 mje13005 complementary

    2SA1046

    Abstract: BU108 BU326 BU100 BD262 2sb688 y 2n5632 bd876
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6497 2N6498* High Voltage NPN Silicon Power Transistors *Motorola Preferred Device 5 AMPERE POWER TRANSISTORS NPN SILICON 250 & 300 VOLTS 80 WATTS . . . designed for high voltage inverters, switching regulators and line–operated


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    PDF 2N6497 2N6498 2N6498* TIP73B TIP74 TIP74A TIP74B 2SA1046 BU108 BU326 BU100 BD262 2sb688 y 2n5632 bd876

    MJE3055 to247

    Abstract: Motorola transistors MJE3055 TO 127 MJE3055 equivalent ST T4 3580 Motorola transistors MJE2955 BU108 transistor MJE3055 motorola MJE3055 TO 126 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD2955 PNP MJD3055 Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. • • • • • • Lead Formed for Surface Mount Applications in Plastic Sleeves No Suffix


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    PDF MJD2955 MJD3055 MJE2955 MJE3055 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A MJE3055 to247 Motorola transistors MJE3055 TO 127 MJE3055 equivalent ST T4 3580 Motorola transistors MJE2955 BU108 transistor MJE3055 motorola MJE3055 TO 126 BU326 BU100

    IC 3526

    Abstract: transistor MJ15024 tip3055 equivalent RCA1C13 BU108 2N6277 applications MJ3247 BDX54 motorola MJ3000 2N3791 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD802 Plastic High Power Silicon PNP Transistor 8 AMPERE POWER TRANSISTORS PNP SILICON 100 VOLTS 65 WATTS . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 1.0 Adc


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    PDF BD802 BD802 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C IC 3526 transistor MJ15024 tip3055 equivalent RCA1C13 BU108 2N6277 applications MJ3247 BDX54 motorola MJ3000 2N3791 equivalent

    BU108

    Abstract: MJ15024 MOTOROLA transistor 2N3055 transistor MJ15022 BDX54 MJ15024 MJ15025 BUV11 equivalent application notes MJ15024 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ15022 MJ15024 * Silicon Power Transistors The MJ15022 and MJ15024 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. *Motorola Preferred Device • High Safe Operating Area 100% Tested —


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    PDF MJ15022 MJ15024 MJ15024 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BU108 MJ15024 MOTOROLA transistor 2N3055 transistor MJ15022 BDX54 MJ15024 MJ15025 BUV11 equivalent application notes MJ15024 BU326 BU100

    T1P122

    Abstract: Transistor TL 31 AC PNP POWER TRANSISTOR T1P122 TIP12O T1P140 TIP120 TIP121 TIP125 TIP126 TIP127
    Text: TIP120, TIP121, TIP122 NPN SILICON POWER DARLINGTONS _ DECEMBER 1971 - REVISED MAY 1993 • Designed for Complementary Use with TIP125, TIP126 and TIP127 • 65 W at 25°C Case Temperature • 5 A Continuous Collector Current • Minimum hFE of 1000 at 3 V, 3 A


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    PDF tip120, tip121, tip122 TIP125, TIP126 TIP127 O-220 TIP120 TIP121 T1P122 Transistor TL 31 AC PNP POWER TRANSISTOR T1P122 TIP12O T1P140 TIP125 TIP127

    TIP12B

    Abstract: tip127 texas tip 127 TIP127 tip 127 texas instruments 2n6128 TIP120 TIP121 TIP122 TIP125
    Text: TEXAS INSTR ÎOPTOÏ 8961726 TEXAS b5 INSTR D E | flTblYSb □ D3fc.cl[]D 4 <OPTO> 62C 36900 TIP125, TIP126, TIP127 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS R E V IS E D O C TO B E R 1 9 8 4 Designed For Complementary use with TIP 120, TIP 121, TIP 122


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    PDF TIP125, TIP126, TIP127 TIP120, TIP121, TIP122 T0-22QAB T-33-31 TIP125 TIP126 TIP12B tip127 texas tip 127 tip 127 texas instruments 2n6128 TIP120 TIP121

    5B62C

    Abstract: T1P127
    Text: TE XA S I N S T R Î O PT OÏ 8961726 TEXAS b5 IN STR ÏF | COPTOT flTblYSb ODabTDO 4 62C 36900 TIP125, TIP126, TIP127 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS R E V IS E D O C T O B E R 1 9 8 4 T-33-31 Designed For Complementary use with TIP120, TIP121, TIP122


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    PDF TIP125, TIP126, TIP127 TIP120, TIP121, TIP122 T-33-31 5B62C T1P127

    T1P121

    Abstract: texas instruments tip122 texas instruments tip127 TIP121 TIP121 TEXAS T1P122
    Text: TYPES TIP120, TIP121. TIP122 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D ESIGN ED FOR COM PLEM EN TARY USE WITH TIP125, TIP126, TIP127 65 W at 25°C Case Temperature • Min hpE ° f 1000 at 3 V , 3 A • 5 A Rated Collector Current • 50 mJ Reverse Energy Rating


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    PDF TIP120, TIP121. TIP122 TIP125, TIP126, TIP127 TIP121, TIP120 T1P121 texas instruments tip122 texas instruments tip127 TIP121 TIP121 TEXAS T1P122

    mj 3055 npn

    Abstract: mt 3055 PIT 3055 TIP 122 transistor APPLICATION circuit tipL22 TIP 122 transistor TIP 42 transistor TIP122 texas instrument TRANSISTOR tip122 BD 147
    Text: TY P ES TIP120, TIP121, TIP122 N-P-N DARLINGTON-CONNECTED SILICON POWER TRAN SISTO RS D E S IG N E D F O R C O M P L E M E N T A R Y U S E W ITH TIP 1 2 5 , T IP 1 2 6 , TIP127 • 65 W at 2 5 °C Case Temperature • Min h p E of • 5 A Rated Collector Current


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    PDF TIP120, TIP121, TIP122 TIP125, TIP126, TIP127 TIP120 TIP121 TIP122 mj 3055 npn mt 3055 PIT 3055 TIP 122 transistor APPLICATION circuit tipL22 TIP 122 transistor TIP 42 transistor TIP122 texas instrument TRANSISTOR tip122 BD 147