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    MJ3000 Price and Stock

    Intel Corporation PLMJ3000-44

    PROG ADAPTER FOR 3000A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PLMJ3000-44 Box 1
    • 1 $500
    • 10 $500
    • 100 $500
    • 1000 $500
    • 10000 $500
    Buy Now

    SMC Corporation of America AMJ3000-N02

    Vacuum Drain Filter/Water Separator, 1/4NPT | SMC Corporation AMJ3000-N02
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS AMJ3000-N02 Bulk 1 1
    • 1 $128.74
    • 10 $128.74
    • 100 $128.74
    • 1000 $128.74
    • 10000 $128.74
    Buy Now

    SMC Corporation of America AMJ3000-N02B

    Vacuum Drain Filter, 1/4NPT, modular, airline | SMC Corporation AMJ3000-N02B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS AMJ3000-N02B Bulk 1 1
    • 1 $133.2
    • 10 $133.2
    • 100 $133.2
    • 1000 $133.2
    • 10000 $133.2
    Buy Now

    SMC Corporation of America AMJ3000-02B

    Drain Separator for vacuum, 1/4Rc, brkt, AMJ series | SMC Corporation AMJ3000-02B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS AMJ3000-02B Bulk 1
    • 1 $133.2
    • 10 $133.2
    • 100 $133.2
    • 1000 $133.2
    • 10000 $133.2
    Get Quote

    SMC Corporation of America AMJ3000-F03

    VACUUM DRAIN FILTER | SMC Corporation AMJ3000-F03
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS AMJ3000-F03 Bulk 1
    • 1 $128.74
    • 10 $128.74
    • 100 $128.74
    • 1000 $128.74
    • 10000 $128.74
    Get Quote

    MJ3000 Datasheets (25)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MJ3000 Central Semiconductor Power Transistors Original PDF
    MJ3000 Comset Semiconductors Silicon Epitaxial Base Darlington - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=10 / Hfe=1kmin / fT(Hz)=1M / Pwr(W)=150 Original PDF
    MJ3000 Motorola 10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.80 VOLTS 150 WATTS - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=10 / Hfe=1kmin / fT(Hz)=1M / Pwr(W)=150 Original PDF
    MJ3000 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=10 / Hfe=1kmin / fT(Hz)=1M / Pwr(W)=150 Original PDF
    MJ3000 Central Semiconductor POWER DARLINGTON TRANSISTORS (METAL) Scan PDF
    MJ3000 Crimson Semiconductor EPITAXIAL BASE Transistor Scan PDF
    MJ3000 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    MJ3000 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    MJ3000 Motorola The European Selection Data Book 1976 Scan PDF
    MJ3000 Motorola Semiconductor Data Library Volume 3 1974 Scan PDF
    MJ3000 Motorola Semiconductor Data Library Volume 3 1974 Scan PDF
    MJ3000 Motorola European Master Selection Guide 1986 Scan PDF
    MJ3000 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    MJ3000 Unknown Transistor Replacements Scan PDF
    MJ3000 Unknown Transistor Replacements Scan PDF
    MJ3000 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    MJ3000 Unknown Transistor Replacements Scan PDF
    MJ3000 Unknown Cross Reference Datasheet Scan PDF
    MJ3000 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MJ3000 Unknown Semiconductor Master Cross Reference Guide Scan PDF

    MJ3000 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MJ3000

    Abstract: No abstract text available
    Text: MJ3000 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF MJ3000 O204AA) 31-Jul-02 MJ3000

    MJ3001

    Abstract: MJ3000 MJ2501 transistor mj3001 MJ2500 MJ3001 equivalent MJ3000/MJ3001
    Text: MJ2500 - MJ2501 PNP MJ3000 - MJ3001 NPN SILICON EPITAXIAL-BASE DARLINGTON The MJ2500, and MJ2501 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications.


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    PDF MJ2500 MJ2501 MJ3000 MJ3001 MJ2500, MJ2500 MJ3000 transistor mj3001 MJ3001 equivalent MJ3000/MJ3001

    mj3001

    Abstract: mj2501 MJ3000 AIN60
    Text: MJ2500/MJ2501 MJ3000/MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • MJ2501 AND MJ3001 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are


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    PDF MJ2500/MJ2501 MJ3000/MJ3001 MJ2501 MJ3001 MJ2500, MJ3000 AIN60

    ic 2501

    Abstract: MJ2500 MJ2501 MJ3000 equivalent 3001 pnp
    Text: SavantIC Semiconductor Product Specification MJ2500/2501 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·DARLINGTON ·High DC current gain ·Complement to type MJ3000/3001 APPLICATIONS ·For use as output devices in complementary general purpose amplifier applications


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    PDF MJ2500/2501 MJ3000/3001 MJ2500 MJ2501 ic 2501 MJ2500 MJ2501 MJ3000 equivalent 3001 pnp

    MJ3000

    Abstract: MJ3001 MJ3000 equivalent MJ3001 equivalent 2501 datasheet
    Text: Inchange Semiconductor Product Specification MJ3000/3001 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・DARLINGTON ・High DC current gain ・Complement to type MJ2500/2501 APPLICATIONS ・For use as output devices in complementary general purpose amplifier applications


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    PDF MJ3000/3001 MJ2500/2501 MJ3000 MJ3001 MJ3000 MJ3001 MJ3000 equivalent MJ3001 equivalent 2501 datasheet

    Untitled

    Abstract: No abstract text available
    Text: MJ3000 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)10 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)400uÌ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k


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    PDF MJ3000

    MJ3000

    Abstract: MJ3001
    Text: SavantIC Semiconductor Product Specification MJ3000/3001 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·DARLINGTON ·High DC current gain ·Complement to type MJ2500/2501 APPLICATIONS ·For use as output devices in complementary general purpose amplifier applications


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    PDF MJ3000/3001 MJ2500/2501 MJ3000 MJ3001 MJ3000 MJ3001

    MJ2501

    Abstract: MJ3001 MJ3000 MJ2500 P003N
    Text: MJ2500/MJ2501 MJ3000/MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n MJ2501 AND MJ3001 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2500, and MJ2501 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are


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    PDF MJ2500/MJ2501 MJ3000/MJ3001 MJ2501 MJ3001 MJ2500, MJ3000 MJ2500 MJ2501 MJ3000 MJ2500 P003N

    MJ3001 equivalent

    Abstract: transistor mj3001 mj2501 MJ3001 MJ3000 MJ2500
    Text: COMPLEMENTARY POWER DARLINGTONS The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications. The complementary NPN types are the MJ3000 and MJ3001 respectively.


    Original
    PDF MJ2500, MJ2501 MJ3000 MJ3001 MJ2500 MJ3000 MJ2501 MJ3001 MJ3001 equivalent transistor mj3001 MJ2500

    Untitled

    Abstract: No abstract text available
    Text: MJ3000 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF MJ3000 O204AA) 16-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: MJ3000 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF MJ3000 O204AA) 18-Jun-02

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    transistor mosfet buv18a

    Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
    Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9


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    Untitled

    Abstract: No abstract text available
    Text: SEMELAB LTD 37E D Û1331Ô7 DGGGDbO 1 • SMLB m ‘ Î'rîwî. Type No. Reliability Polarity Option MJ900 MJ901 MJ2500 MJ2501 MJ2955 SCREEN SCREEN SCREEN SCREEN CECC PNP PNP PNP PNP PNP MJ3000 MJ3001 MJ3201 HJ3202 MJ3238 SCREEN SCREEN HX-REL HI-REL HI-REL


    OCR Scan
    PDF MJ900 MJ901 MJ2500 MJ2501 MJ2955 MJ3000 MJ3001 MJ3201 HJ3202 MJ3238

    transistor mj3001

    Abstract: j3000 MJ3001 transistor MJ2501 MJ2500 MJ2501 AN-415 J2500 J2501 MJ3000
    Text: MJ2500, MJ2501, MJ3000, MJ3001 continued E L E C T R IC A L C H A R A C T E R IS T IC S (Tc = 2S°C unless otherwise noted)_ _ _ | Characteristic | Symbol | M in | M ix I O F F C H A R A C T E R IS T IC S


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    PDF MJ2500, MJ2501, MJ3000, MJ3001 J3000 J2501. MJ3001 J2500, MJ3000 transistor mj3001 transistor MJ2501 MJ2500 MJ2501 AN-415 J2500 J2501

    transistor mj3001

    Abstract: TRANSISTOR 2SC 635 MJ3000 MJ3000 circuit MJ2501 MJ3001 J3000 j-2500 MJ2500 AN-415
    Text: MJ2500, MJ2501 PNP SILICON MJ3000, MJ3001 NPN 10 A M PERE D A R L IN G T O N POWER T R A N SIST O R S C O M PLEM EN T A R Y SILIC O N MEDIUM-POW ER C O M PLEM EN TA R Y SILIC O N T R A N SIST O R S . 6 0 -8 0 V O L T S 150 W A T T S for use as o u tp u t devices in co m ple m e n tary general purpose


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    PDF MJ2500, MJ2501 MJ3000, MJ3001 MJ2500 MJ3000 -MJ2501 transistor mj3001 TRANSISTOR 2SC 635 MJ3000 circuit J3000 j-2500 AN-415

    MJ3001

    Abstract: mj3000
    Text: SGS-THOMSON MJ2500/MJ2501 MJ3000/MJ3001 ÜLieTOOffäDOl COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . MJ2501 AND MJ3001 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are


    OCR Scan
    PDF MJ2500/MJ2501 MJ3000/MJ3001 MJ2501 MJ3001 MJ2500, MJ2501 MJ3000 mj3000

    MJ2500

    Abstract: MJ2501 MJ3001 MJ3000 MJ3000/MJ3001
    Text: MJ2500 MJ2501 MJ3000 MJ3001 PNP NPN SILICON COMPLEMENTARY TRANSISTORS POWER DARLINGTON 10 AMPERES, 60-80 VOLTS semicomluctc * Central Semiconductor Corp. 145 Adams Avenue Hauppauge, New York 11 788 JEDEC T0-3 CASE DESCRIPTION The CENTRAL S EM ICONDUCTOR MJ2500, MJ3000 Series are mediurn - power Complementary Silicon


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    PDF MJ2500 MJ2501 MJ3000 MJ3001 MJ2500, MJ2501 MJ3000/MJ3001

    j3001

    Abstract: I/J3001-3002 MJ2501 MJ3000M
    Text: SGS-THOMSON RflDeiRi IILiera [S!lD ei MJ2500/MJ2501 MJ3000/MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . MJ2501 AND MJ3001 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors


    OCR Scan
    PDF MJ2500/MJ2501 MJ3000/MJ3001 MJ2501 MJ3001 MJ2500, MJ3000 J2500 J3000 j3001 I/J3001-3002 MJ3000M

    2SC 1177

    Abstract: npn darlington transistor 150 watts MJ2500 MJ2501 MJ3000 MJ3001 darlington complementary power amplifier MJ3000 circuit MJ3000/MJ3001
    Text: MJ2500, MJ2501 PNP SILICON MJ3000, MJ3001 NPN 10 A M PERE D A R L IN G T O N POWER T R A N SIST O R S C O M PLEM EN T A R Y SILIC O N MEDIUM-POW ER C O M PLEM EN TA R Y SILIC O N T R A N SIST O R S . 6 0 -8 0 V O L T S 150 W A T T S for use as o u tp u t devices in co m ple m e n tary general purpose


    OCR Scan
    PDF MJ2500, MJ2501 MJ3000, MJ3001 MJ2500 MJ3000 2SC 1177 npn darlington transistor 150 watts darlington complementary power amplifier MJ3000 circuit MJ3000/MJ3001

    MJ3001

    Abstract: MJ2501 MJ2500 MJ3000 diagram DARLINGTON j3001 transistor mj3001
    Text: * 7/ S G S -TH O M S O N MJ2500/MJ2501 MJ3000/MJ3001 !lLllSTO [tiSD @ i COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . MJ2501 AND MJ3001 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in


    OCR Scan
    PDF MJ2500/MJ2501 MJ3000/MJ3001 MJ2501 MJ3001 MJ2500, MJ3000 MJ2500 MJ2501 diagram DARLINGTON j3001 transistor mj3001

    MC7805CK

    Abstract: MC7812Ck MC7815CK MC7824CK LM340K-24 LM7812KC lm7805kc LM340K24 LM7824KC 78h05ck
    Text: Selection of Equivalents for Monolithic Voltage Regulators, Darlington Transistors, Rectifiers and Switching Transistors LAMBDA TYPE * LAS723A LAS723B LAS1000 LAS1100 LAS1405 LAS1406 LAS1408 LAS1410 LAS1412 LAS1415 LAS14U LAS1505 LAS 1506 LAS1508 LAS1510


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    PDF LAS723A LAS723B LAS1100 LAS1405 LM123K LM223K LM323K SH0323 LAS1406 LAS1408 MC7805CK MC7812Ck MC7815CK MC7824CK LM340K-24 LM7812KC lm7805kc LM340K24 LM7824KC 78h05ck

    MJE3055F

    Abstract: SE9300 FT3055 2N3715 FAIRCHILD FT50 SE9303 2N3440 2N5683 2N5684 2N5685
    Text: FAIRCHILD TRANSISTORS POWER POWER TRANSISTORS BY lC max, POLARITY AND ASCENDING VCEO Item DEVICE NO. Polarity NPN PNP ic = 50.0 A Max v CEO V Max VCE(sat) @ ic V A Max hpE @ 'C A Min/Max (Cont d) it PD(Max) MHz Min(Typ) Tc= 25°C Package No. Continuous (Cont'd)


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    PDF 2N5685 2N5683 2N5686 2N5684 2N3440 2N6387* 1K/20K O-220 MJE30S5F MJE3055F SE9300 FT3055 2N3715 FAIRCHILD FT50 SE9303 2N3440

    transistor buv18a

    Abstract: motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference"
    Text: STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR COLLECTOR CONNECTED TO TAB Resistive Switching IcCont Amps Max VcEO sus) Volts Min 0.5 300 MPSU10 0.8 40 MPSU02 1 120 2 Device Type *s US Max tf US Max fT MHz Min P q (Case) Watts hFE Min/Max @ lc Amp MPSU60 30 min


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    PDF MPSU10 MPSU02 MPSU03 MPSU04 MPSU01 MPSU01A MPSU45# MPSU60 MPSU52 MPSU51 transistor buv18a motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference"