g30n60
Abstract: No abstract text available
Text: HGTG30N60B3 Data Sheet November 2013 600 V, NPT IGBT Features The HGTG30N60B3 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at
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HGTG30N60B3
HGTG30N60B3
TA49170.
O-247
g30n60
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G30N60
Abstract: TA49053 TA49172 TA49170 G30N60B3 G30N60B3D HGTG30N60B3D LD26 HGTG30N60b 200pulse
Text: HGTG30N60B3D Data Sheet April 2004 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Packaging JEDEC STYLE TO-247 The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a
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HGTG30N60B3D
O-247
HGTG30N60B3D
150oC.
TA49170.
TA49053.
G30N60
TA49053
TA49172
TA49170
G30N60B3
G30N60B3D
LD26
HGTG30N60b
200pulse
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G30N60B3
Abstract: G30N60 G30N60B3 hARRIS TA49170 G30N60B
Text: HGTG30N60B3 S E M I C O N D U C T O R 60A, 600V, UFS Series N-Channel IGBT January 1998 Features Description • 60A, 600V, TC = 25oC The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a
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HGTG30N60B3
HGTG30N60B3
150oC.
TA49170.
60nts
1-800-4-HARRIS
G30N60B3
G30N60
G30N60B3 hARRIS
TA49170
G30N60B
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G30N60B3
Abstract: TA49170
Text: HGTG30N60B3 Data Sheet April 2013 600 V, NPT IGBT Features The HGTG30N60B3 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where
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HGTG30N60B3
HGTG30N60B3
TA49170.
O-247
G30N60B3
O-247
G30N60B3
TA49170
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g30n60b3
Abstract: G30N60 HGTG30N60B3 TA49170 HGTG30N60B3D LD26 DIODE B2 IC2560
Text: HGTG30N60B3 Data Sheet August 2003 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
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HGTG30N60B3
HGTG30N60B3
150oC.
150oC
g30n60b3
G30N60
TA49170
HGTG30N60B3D
LD26
DIODE B2
IC2560
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G30N60B3D
Abstract: G30N60 G30N60B3 HGTG30N60B3D LD26 TA49053 TA49170 TA49172
Text: HGTG30N60B3D Data Sheet January 2000 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input
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HGTG30N60B3D
HGTG30N60B3D
150oC.
TA49170.
TA49053.
150oC
G30N60B3D
G30N60
G30N60B3
LD26
TA49053
TA49170
TA49172
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G30N60B3D
Abstract: HGTG30N60B3D TA49172
Text: HGTG30N60B3D Data Sheet December 2001 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input
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HGTG30N60B3D
HGTG30N60B3D
150oC.
TA49170.
TA49053.
G30N60B3D
TA49172
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g30n60b3
Abstract: HGTG30N60B3
Text: HGTG30N60B3 Data Sheet December 2001 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
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HGTG30N60B3
HGTG30N60B3
150oC.
TA49170.
g30n60b3
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G30N60B3D
Abstract: TA49170 TA49172 HGTG30N60B3D LD26 TA49053
Text: HGTG30N60B3D Data Sheet November 2000 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input
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HGTG30N60B3D
HGTG30N60B3D
150oC.
TA49170.
TA49053.
150oC
G30N60B3D
TA49170
TA49172
LD26
TA49053
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G30N60B3D
Abstract: G30N60B3 HGT4E30N60B3DS G30N60 HGTG30N60B3D LD26 TA49053 TA49170 TA49172
Text: HGTG30N60B3D, HGT4E30N60B3DS Data Sheet December 2001 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Packaging JEDEC STYLE TO-247 E The HGTG30N60B3D, and HGT4E30N60B3DS are MOS gated high voltage switching devices combining the best
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HGTG30N60B3D,
HGT4E30N60B3DS
O-247
HGT4E30N60B3DS
150oC.
TA49170.
TA49053.
O-268AA
G30N60B3D
G30N60B3
G30N60
HGTG30N60B3D
LD26
TA49053
TA49170
TA49172
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g30n60b3
Abstract: HGTG30N60B3 HGTG30N60B3D LD26 TA49170
Text: HGTG30N60B3 Data Sheet November 2004 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
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HGTG30N60B3
HGTG30N60B3
150oC.
150oC
g30n60b3
HGTG30N60B3D
LD26
TA49170
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g30n60b3d
Abstract: No abstract text available
Text: HGTG30N60B3D Data Sheet April 2004 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Packaging JEDEC STYLE TO-247 The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a
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HGTG30N60B3D
O-247
HGTG30N60B3D
150oC.
TA49170.
TA49053.
g30n60b3d
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Untitled
Abstract: No abstract text available
Text: HGTG30N60B3 Data Sheet November 2004 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
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HGTG30N60B3
HGTG30N60B3
150oC.
150oC
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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G30N60B3
Abstract: HGTG30N60B3 LD26 TA49170
Text: HGTG30N60B3 Data Sheet January 2000 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
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HGTG30N60B3
HGTG30N60B3
150oC.
150oC
G30N60B3
LD26
TA49170
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g30n60b3
Abstract: HGTG30N60B3 GE 443 HGTG30N60B3D LD26 TA49170 G30N60
Text: HGTG30N60B3 Data Sheet November 2000 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
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HGTG30N60B3
HGTG30N60B3
150oC.
150oC
g30n60b3
GE 443
HGTG30N60B3D
LD26
TA49170
G30N60
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8508 zener
Abstract: G30N60b3d TA49172 HGTG30N60B3D LD26 TA49053 TA49170
Text: HGTG30N60B3D TM Data Sheet November 2000 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input
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HGTG30N60B3D
HGTG30N60B3D
150oC.
TA49170.
TA49053.
150oCy
8508 zener
G30N60b3d
TA49172
LD26
TA49053
TA49170
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g30n60b3
Abstract: HGTG30N60B3 8508 zener g30n60 HGTG30N60B3D LD26 TA49170 G30N60B
Text: HGTG30N60B3 TM Data Sheet November 2000 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a
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HGTG30N60B3
HGTG30N60B3
150oC.
150oC
g30n60b3
8508 zener
g30n60
HGTG30N60B3D
LD26
TA49170
G30N60B
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G30N60
Abstract: TA49053 G30N60B3D G30N60B3 TA49172 transistor C110 Transistor No C110 TA49170 LG 631 LG 631 IC
Text: in t e HGTG30N60B3D r r ii J a n u a ry . m D ata S h eet 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input
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HGTG30N60B3D
HGTG30N60B3D
TA49170.
TA49053.
G30N60
TA49053
G30N60B3D
G30N60B3
TA49172
transistor C110
Transistor No C110
TA49170
LG 631
LG 631 IC
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g30n60b3
Abstract: G30N60 TA49170 MOSFET 600v 60a vqe 24 d C110 HGTG30N60B3 LD26 hgtp30n60b3d tr c110
Text: HGTG30N60B3 in t e r r ii J a n u a ry . m D ata S h eet 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a
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HGTG30N60B3
HGTG30N60B3
TA49170.
O-247ration
g30n60b3
G30N60
TA49170
MOSFET 600v 60a
vqe 24 d
C110
LD26
hgtp30n60b3d
tr c110
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