Untitled
Abstract: No abstract text available
Text: Model T0727J5012AHF Rev A Ultra Low Profile 0805 Impedance Transformer 50Ω to 12.5Ω Description The T0727J5012AHF is a low cost, low profile sub-miniature impedance transformer in an easy to use surface mount package. With smaller footprint, this single component replaces the conventional discrete component matching network
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T0727J5012AHF
T0727J5012AHF
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Untitled
Abstract: No abstract text available
Text: Model T0727J5012AHF Rev B Ultra Low Profile 0805 Impedance Transformer 50Ω to 12.5Ω Description The T0727J5012AHF is a low cost, low profile sub-miniature impedance transformer in an easy to use surface mount package. With smaller footprint, this single component replaces the conventional discrete
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T0727J5012AHF
T0727J5012AHF
481-D.
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Untitled
Abstract: No abstract text available
Text: Request a Quote | Ask an Engineer Image description. Print this Sheet End of image description. Image description. as PDF EndSave of image description. DCF1300-T0720 7.8 GHz to 8.5 GHz DCF Drop-in ISOLATORS & CIRCULATORS Specifications RF Frequency Isolation
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DCF1300-T0720
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DNF1300-T0720
Abstract: No abstract text available
Text: DNF Drop-in Isolators & Circulators DNF1300-T0720 7.8 GHz to 8.501 GHz Specifications RF Frequency Isolation Insertion Loss VSWR Peak Power Average Power Package Size Environmental Notes Specifications subject to change without notice Mica Microwave | Manteca, CA | 1-209-825-3977 | www.Mica-MW.com
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DNF1300-T0720
DNF1300-T0720
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DNF1300-T0720
Abstract: T072
Text: DNF Drop-in Isolators & Circulators DNF1300-T0720 7.8GHz to 8.501GHz Specifications RF Frequency Isolation Insertion Loss VSWR Peak Power Average Power Package Size Environmental Notes Specifications subject to change without notice Mica Microwave | Manteca, CA | 1-209-825-3977 | www.Mica-MW.com
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DNF1300-T0720
501GHz
DNF1300-T0720
T072
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DCF1300-T0720
Abstract: No abstract text available
Text: DCF Drop-in Isolators & Circulators DCF1300-T0720 7.8GHz to 8.5GHz Specifications RF Frequency Isolation Insertion Loss VSWR Peak Power Average Power Power Forward Power Reverse Package Size 7.8GHz to 8.5GHz 20 dB min 0.4 dB (max) 1.25:1 100 Watts (max)
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DCF1300-T0720
DCF1300-T0720
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DCF1300-T0720
Abstract: No abstract text available
Text: DCF Drop-in Isolators & Circulators DCF1300-T0720 7.8 GHz to 8.5 GHz Specifications RF Frequency Isolation Insertion Loss VSWR Peak Power Average Power Power Forward Power Reverse Package Size 7.8 GHz to 8.5 GHz 20 dB min 0.4 dB (max) 1.25:1 100 Watts (max)
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DCF1300-T0720
DCF1300-T0720
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TL072CP PIN DIAGRAM
Abstract: equivalent tl072cp TL074MJ tl071 datasheet tl072 equivalent TL072MJG TL071 PIN DIAGRAM TL074 TL074M TL071A
Text: TL071, TL071A, TL071B, TL072 TL072A, TL072B, TL074, TL074A, TL074B LOWĆNOISE JFETĆINPUT OPERATIONAL AMPLIFIERS SLOS080G − SEPTEMBER 1978 − REVISED SEPTEMBER 2003 D Low Power Consumption D Wide Common-Mode and Differential Voltage Ranges D Low Input Bias and Offset Currents
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TL071,
TL071A,
TL071B,
TL072
TL072A,
TL072B,
TL074,
TL074A,
TL074B
SLOS080G
TL072CP PIN DIAGRAM
equivalent tl072cp
TL074MJ
tl071 datasheet
tl072 equivalent
TL072MJG
TL071 PIN DIAGRAM
TL074
TL074M
TL071A
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IS TL071
Abstract: tl072 die TL074M
Text: TL071, TL071A, TL071B, TL072 TL072A, TL072B, TL074, TL074A, TL074B LOW-NOISE JFET-INPUT OPERATIONAL AMPLIFIERS SLOS080J − SEPTEMBER 1978 − REVISED MARCH 2005 D Low Power Consumption D Wide Common-Mode and Differential Voltage Ranges D Low Input Bias and Offset Currents
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TL071,
TL071A,
TL071B,
TL072
TL072A,
TL072B,
TL074,
TL074A,
TL074B
SLOS080J
IS TL071
tl072 die
TL074M
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t310m
Abstract: T064M TB0720M GR-1089-CORE J-STD-020A TB0640M TB0900M TB3500M
Text: TB0640M - TB3500M 50A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE UNDER DEVELOPMENT • · · · · · 50A Peak Pulse Current @ 10/1000ms 250A Peak Pulse Current @ 8/20ms 58 - 320V Stand-Off Voltages Oxide-Glass Passivated Junction Bi-Directional Protection In a Single Device
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TB0640M
TB3500M
10/1000ms
8/20ms
J-STD-020A
MIL-STD-202,
DS30361
TB0640M-13
t310m
T064M
TB0720M
GR-1089-CORE
J-STD-020A
TB0900M
TB3500M
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BF178
Abstract: bf179 BFT79 BF177 2N2219 2N2905 bf338 BFQ36 BC325 2N3571 2N3572
Text: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450
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4-95J0
2N3570
2N3571
2N3572
2N918
2N4252
2N4253
BFQ36
BF257/8/9
BFQ37
BF178
bf179
BFT79
BF177
2N2219 2N2905
bf338
BC325
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F13S
Abstract: BFQ35 BC177 pnp transistor transistor bc303 transistor t05 BF179 2n3440 equivalent bc304 equivalent bc143 equivalent 2N3570
Text: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450
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4-95J0
2N3570
2N3571
2N3572
2N918
2N4252
2N4253
High59
BS9365
F13S
BFQ35
BC177 pnp transistor
transistor bc303
transistor t05
BF179
2n3440 equivalent
bc304 equivalent
bc143 equivalent
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C495 transistor
Abstract: c735 2N1893 equivalent c644 C735 O 2N2222 hfe C749 2N3570 transistor C633 NPN C460
Text: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *T t i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450
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4-95J0
2N3570
2N3571
2N3572
2N918
2N4252
2N4253
BS9300
2N2219A
C495 transistor
c735
2N1893 equivalent
c644
C735 O
2N2222 hfe
C749
transistor C633
NPN C460
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cny18
Abstract: No abstract text available
Text: T em ic CNY18 TELEFUNKEN Semiconductors Optocoupler with Phototransistor Output Description The CNY18 consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a hermetically sealed 4 lead T072 metal can package for high reliability requirements.
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CNY18
CNY18
00130b4
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3N225
Abstract: BF805 3N201 3N211 BF802 3N202 BF806 BF800 3N204 3N205
Text: mTexas In s tru m e n ts FET's For V H F A m p lifie rs and M ix e rs Type No. Case I g s s Vp Ciss Crss Pol max. max max. max. nA V pF 2N3823 T072 N 0.5 8 6 2N4416 T072 2N4416A T072 N N 0.1 0.1 6 6 4 4 0.8 0.8 4000 400 4000 10 2 N5549 N 0.25 6 8 2 6000 T018
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2N3823
2N4416
2N4416A
N5549
3N201
3N202
3N203
N203A
3N204
BF800
3N225
BF805
3N211
BF802
BF806
3N205
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BFR80
Abstract: BFR79 BFR81 BFT69 BFW32 700M BFQ37 BFQ38S BFR38 BFR52
Text: SEHELAB LTD 37E D • 6133157 DQQ0D5Q b « S U L B ~T~ 3 3 -Of , I •i Type No. Option''17 Polarlly Packa9 e v CEO hF E @ VC e / ' c fT PD PNP PNP PNP NPN PNP T039 T039 T072 T092 T092 300 250 35 20 80 0.2 1 20m 1 1 30-300 25min 25min 60min 50min 5 /10m 5 /50m
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fil331Ã
BFQ37
5/10m
BFQ38S
25min
5/50m
BFR38
10/3m
BFR52
BFR80
BFR79
BFR81
BFT69
BFW32
700M
BFR52
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2369
Abstract: T018 T072 PN2368 NKT13329 13429 16229
Text: NPN Silicon Transistors N P N S ilic o n Planar T ransistors fo r high speed sw itching and high fre q u e n cy use Type M a x im u m ratings Case BSY 95A T018 T018 T018 T018 N K T 13329 N K T 13429 N K T 16229 PN 918 PN 2368 PN 2369 T018 T018 T072 Plastic T 0 1 8
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/10mA)
10mA/1mA)
2369
T018
T072
PN2368
NKT13329
13429
16229
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Untitled
Abstract: No abstract text available
Text: pmV MS HADE IN THIRD AH6LE PROJECTION HIS DRAUIHÛ 13 UNPUBLISHED. I RELE ftEVtSlûNS REV g REDWN, ECN BD3361 A HOUB1NG. A QQ-B-750j 5KELLi CARBON STEEL PER A5TM A109j SCREWLOCK. ZINC; GOLD PLATING PER MIL-G-45204, TIN PLATING PER M ]L-T-T0727, NICKEL PLATING PER QQ-N-290, COPPER PLATING PER MIL-C-14550.
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BD3361
QQ-B-750j
A109j
MIL-G-45204,
L-T-T0727,
QQ-N-290,
MIL-C-14550.
000030J
BD6O30
PM023/aniiiOa73/MntlBd
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K120P
Abstract: No abstract text available
Text: Tem ic K120P Semiconductors Optocoupler with Phototransistor Output Description The K 120P consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a hermetically sealed 4-lead T072 metal can package for high reliability requirements.
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K120P
13-Jun-96
3-Jun-96
K120P
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Untitled
Abstract: No abstract text available
Text: Tem ic Semiconductors # SOT23 TO 18 2 lead T018 (3 lead) ^ TOS2 T072 TO92 (2 lead) ^ T092(31ead) JFETs - N-Channel JFET Analog Switches Break down Voltage Mm i \ i “ VS i f .5 » . ¡ i f * , • fe ’ (Q> Min \b x Min J 105 3 ^ .5 -10 500 -20 J106
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31ead)
T0226AA
PN4391
PN4392
PN4393
T0236
IT0206AA
T0206AC
2N5432
2N5433
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germanium af transistors
Abstract: OC171 OC170 AF126 AF124 germanium transistors PNP AF114 AF127 AF125 603F
Text: PNP Germanium Transistors PNP Germanium V H F Diffused Transistors in T 0 7 and T 0 7 2 metal cases Type C h aracte ristics @ 2 5 ° C M a x im u m ratings Cai se V BV£B O V 'c m mA b v cbo 114 115 116 117 124 125 126 127 T07 T07 TO 7 T072 T072 T072 T072
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OC170
OC171
110mA/1mA)
germanium af transistors
AF126
AF124
germanium transistors PNP
AF114
AF127
AF125
603F
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2N4252
Abstract: 2N3570 2N3571 pnp hfe 70 BFT69 2N3572 048J 2N3571 NPN bc143 2N918
Text: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *T t i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450
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4-95J0
2N3570
2N3571
2N3572
2N918
2N4252
2N4253
High15
-150nS
240nS
pnp hfe 70
BFT69
048J
2N3571 NPN
bc143
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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TIL120
Abstract: MS3152
Text: T IL I 20, TIL121 OPTOCOUPLERS □ 1956, N O V E M B E R 1974 G A LLIU M ARSENIDE DIO DE IN F R A R E D SOURCE O PTIC A LLY COUPLED TO A HIG H -G A IN N-P-N SILICON PHOTOTRANSISTOR • Photon Coupling for Isolator Applications • High Overall Current Gain . . . 1.0 Typ TIL 121
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TIL121
T0-72
TIL120
MS3152
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