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    SSM6E Search Results

    SSM6E Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SSM6E01TU Toshiba Load Switch Applications Original PDF
    SSM6E03TU Toshiba Japanese - Transistors Original PDF
    SSM6E03TU Toshiba Transistors Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: SSM6E03TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E03TU ○Power Management Switch Applications Unit: mm • 1.8 V drive P-channel MOSFET and 1.5 V drive N-channel MOSFET incorporated into one package. • Low power dissipation due to P-channel MOSFET that features low


    Original     		PDF SSM6E03TU

    Untitled

    Abstract: No abstract text available
    Text: SSM6E03TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E03TU ○Power Management Switch Applications Unit: mm • P-channel MOSFET and 1.8 V drive • N-channel MOSFET and 1.5 V drive • P-channel MOSFET and N-channel MOSFET incorporated into one


    Original     		PDF SSM6E03TU

    p-ch MOSfet

    Abstract: SSM6E03TU
    Text: SSM6E03TU 東芝複合素子 シリコンPチャネルMOS形+ NチャネルMOS形 SSM6E03TU ○パワーマネージメントスイッチ 1.7±0.1 • 1.5 V 駆動 （Nch） 目 記 号 定 格 単位 ド レ イ ン ・ ソ ー ス 間 電 圧 VDS −20 V


    Original     		PDF SSM6E03TU p-ch MOSfet SSM6E03TU

    Untitled

    Abstract: No abstract text available
    Text: SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type U-MOS II + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications Unit: mm • P-channel MOSFET and N-channel MOSFET incorporated into one package. • Low power dissipation due to P-channel MOSFET that features low


    Original     		PDF SSM6E01TU

    Untitled

    Abstract: No abstract text available
    Text: SSM6E03TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E03TU • 1.8 V driveP-channel MOSFET and 1.5 V driveN-channel MOSFET incorporated into one package. 2.1±0.1 • Low power dissipation due to P-channel MOSFET that features low


    Original     		PDF SSM6E03TU

    SSM6E01TU

    Abstract: No abstract text available
    Text: SSM6E01TU 東芝複合素子 シリコンPチャネルMOS形 U-MOS II + NチャネルMOS形 (プレーナ) SSM6E01TU ○ ロードスイッチ 単位: mm • Pch MOSFET と Nch MOSFET を 1 パッケージに内蔵 • Pch MOSFET は低 RDS (ON)低電圧駆動のため低損失なスイッチを実


    Original     		PDF SSM6E01TU E01TU SSM6E01TU

    Untitled

    Abstract: No abstract text available
    Text: SSM6E03TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E03TU Power Management Switch Applications Unit: mm • P-channel MOSFET and 1.8 V drive • N-channel MOSFET and 1.5 V drive • P-channel MOSFET and N-channel MOSFET incorporated into one


    Original     		PDF SSM6E03TU

    KTA 3-25

    Abstract: SSM6E01TU SSM6E
    Text: SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type U-MOS II + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications Unit: mm • P-channel MOSFET and N-channel MOSFET incorporated into one package. · Low power dissipation due to P-channel MOSFET that features low


    Original     		PDF SSM6E01TU KTA 3-25 SSM6E01TU SSM6E

    SSM6E02TU

    Abstract: No abstract text available
    Text: SSM6E02TU 東芝複合素子 シリコンPチャネルMOS形+ NチャネルMOS形 SSM6E02TU ○パワーマネージメントスイッチ • 1.5 V 駆動です • 低電圧駆動低 RDS（ON）の Pch MOSFET と Nch MOSFET を 単位: mm 2.1±0.1 1 パッケージに内蔵し、高密度化に最適です


    Original     		PDF SSM6E02TU SSM6E02TU

    SSM6E02TU

    Abstract: No abstract text available
    Text: SSM6E02TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E02TU Unit: mm ○Power Management Switch Applications 1.7±0.1 Q1 Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Drain-Source voltage VDS −20


    Original     		PDF SSM6E02TU SSM6E02TU

    Untitled

    Abstract: No abstract text available
    Text: SSM6E02TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E02TU 2.1±0.1 package. 1.7±0.1 Low power dissipation due to P-channel MOSFET that features low Pb free Characteristics Symbol Rating Unit Drain-Source voltage VDS −20


    Original     		PDF SSM6E02TU

    Untitled

    Abstract: No abstract text available
    Text: SSM6E03TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E03TU • 1.8 V driveP-channel MOSFET and 1.5 V driveN-channel MOSFET incorporated into one package. 2.1±0.1 • Low power dissipation due to P-channel MOSFET that features low


    Original     		PDF SSM6E03TU

    Untitled

    Abstract: No abstract text available
    Text: SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type U-MOS II + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications • P-channel MOSFET and N-channel MOSFET incorporated into one package. • Low power dissipation due to P-channel MOSFET that features low


    Original     		PDF SSM6E01TU

    Untitled

    Abstract: No abstract text available
    Text: SSM6E02TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E02TU 2.1±0.1 package. 1.7±0.1 Low power dissipation due to P-channel MOSFET that features low Pb free Characteristics Symbol Rating Unit Drain-Source voltage VDS −20


    Original     		PDF SSM6E02TU

    SSM6E01TU

    Abstract: HIGH POWER MOSFET TOSHIBA
    Text: SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type U-MOS II + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications • P-channel MOSFET and N-channel MOSFET incorporated into one package. • Low power dissipation due to P-channel MOSFET that features low


    Original     		PDF SSM6E01TU SSM6E01TU HIGH POWER MOSFET TOSHIBA

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


    Original     		PDF 200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    2SK4207

    Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		PDF BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03

    TPCA*8064

    Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
    Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF BCE0082B TPCA*8064 TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028

    8aa1

    Abstract: esm 310 2SK982 733 SSOP10 kef q1 datasheet SSM3J13T SSM3K03TE 2SJ148 2SJ167 2SJ168
    Text: 小型面実装MOS FET S-MOSシリーズ ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		PDF 050106DAA1 12341D3AG BDJ0099A 8aa1 esm 310 2SK982 733 SSOP10 kef q1 datasheet SSM3J13T SSM3K03TE 2SJ148 2SJ167 2SJ168