buck-boost chopper
Abstract: buck pfc sot 227b diode fast 48N50Q IXFE44N50QD2 IXFE44N50QD3 IXFE48N50QD2 IXFE48N50QD3 IXFK48N50
Text: HiPerFETTM Power MOSFETs VDSS IXFE44N50QD2 IXFE44N50QD3 500 V IXFE48N50QD2 IXFE48N50QD3 500 V Buck & Boost Configurations for PFC & Motor Control Circuits ID cont RDS(on) trr 0.12 Ω 35 ns 0.11 Ω 35 ns 39 A 41A 3 3 4 Preliminary data sheet 2 2 4 1 1 Symbol
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IXFE44N50QD2
IXFE44N50QD3
IXFE48N50QD2
IXFE48N50QD3
227TM
44N50Q
48N50Q
IXFK48N50Q
buck-boost chopper
buck pfc
sot 227b diode fast
48N50Q
IXFK48N50
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200n60
Abstract: robot control
Text: Preliminary Data Sheet HiPerFASTTM IGBT IXGE 200N60B VCES IC25 VCE sat tfi = = = = 600 V 175 A 2.1 V 160ns E ISOPLUS 227TM (IXGE) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous
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200N60B
160ns
227TM
728B1
200n60
robot control
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200N60A
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGN 200N60A VCES IC25 VCE sat tfi = = = = 600 V 200 A 2.5 V 200 ns Preliminary data E Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient
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200N60A
200N60A
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IXGN60N60C2
Abstract: 60N60C2 60N60C2D1 ixgn60N60 IXGN60N60C2D1 IGBT 60N60C2D1 siemens igbt siemens igbt 75a high current igbt 60N60C2D
Text: Advance Technical Data HiPerFASTTM IGBT with Diode VCES IXGN 60N60C2 IXGN60N60C2D1 IC25 VCE sat C2-Class High Speed IGBTs tfi(typ) E Symbol Test Conditions V CES TJ = 25°C to 150°C D1 E Maximum Ratings 600 VCGR TJ = 25°C to 150°C; RGE = 1 MW = 600 V = 75 A
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60N60C2
IXGN60N60C2D1
OT-227B,
IC110
2x61-06A
IXGN60N60C2
60N60C2
60N60C2D1
ixgn60N60
IGBT 60N60C2D1
siemens igbt
siemens igbt 75a
high current igbt
60N60C2D
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200N10P
Abstract: IXFN200N10P TO-227B IXFX200N10P PLUS247 IXFN200N10P IXYS
Text: Advanced Technical Information PolarTM HiPerFET Power MOSFET VDSS ID25 IXFN 200N10P IXFK 200N10P IXFX 200N10P RDS on = 100 V = 200 A Ω = 7.5 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ
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200N10P
OT-227
E153432
IXFX200N10P
IXFN200N10P
200N10P
IXFN200N10P
TO-227B
IXFX200N10P
PLUS247
IXFN200N10P IXYS
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Vishay resistor RH
Abstract: shunt R010
Text: RTOP Vishay Sfernice Power Resistor for Mounting onto a Heatsink Thick Film Technology FEATURES • 1 % tolerance available • High power rating = 200 W • Wide ohmic value range = 0.046 Ω to 1 MΩ • Non inductive • Easy mounting • Low thermal radiation of the case
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OT-227
2002/95/EC
OT-227B
11-Mar-11
Vishay resistor RH
shunt R010
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IXGN400N60B3
Abstract: No abstract text available
Text: Preliminary Technical Information IXGN400N60B3 GenX3TM 600V IGBT VCES = 600V IC25 = 430A VCE sat ≤ 1.40V Medium-Speed Low-Vsat PT IGBT for 5-40 kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600
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IXGN400N60B3
OT-227B,
E153432
IC110
400N60B3
IXGN400N60B3
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Mosfet 75V 120A
Abstract: Power Mosfet 75V 120A IXFN240N15T2
Text: Advance Technical Information IXFN240N15T2 GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 = = 150V 240A Ω 5.2mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S G Symbol Test Conditions
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IXFN240N15T2
140ns
OT-227
E153432
240N15T2
Mosfet 75V 120A
Power Mosfet 75V 120A
IXFN240N15T2
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IXFN520N075T2
Abstract: No abstract text available
Text: Preliminary Technical Information IXFN520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 75V 480A Ω 1.9mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions VDSS TJ = 25°C to 175°C
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IXFN520N075T2
OT-227
E153432
520N075T2
IXFN520N075T2
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IXGN320N60A3
Abstract: No abstract text available
Text: IXGN320N60A3 GenX3TM 600V IGBT VCES = 600V IC25 = 320A VCE sat ≤ 1.25V Ultra-Low-Vsat PT IGBT for up to 5kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXGN320N60A3
OT-227B,
E153432
IC110
320N60A3
3-08-A
IXGN320N60A3
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IXFN320N17T2
Abstract: ixfn320n 320N17T2
Text: Advance Technical Information IXFN320N17T2 GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 = = 170V 260A Ω 5.2mΩ 150ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S G Symbol Test Conditions
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IXFN320N17T2
150ns
OT-227
E153432
320N17T2
IXFN320N17T2
ixfn320n
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ixfn420n10t
Abstract: 420N10T 420N1 MOSFET 60V 210A F420 IXFN SOT227 DS100199 123B16
Text: Advance Technical Information IXFN420N10T GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 = = 100V 420A Ω 2.3mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S G Symbol Test Conditions
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IXFN420N10T
140ns
OT-227
E153432
420N10T
ixfn420n10t
420N10T
420N1
MOSFET 60V 210A
F420
IXFN SOT227
DS100199
123B16
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IXGN200N60B3
Abstract: 9V DC INPUT and gate ic 200N60B3 IGBT 100V 100A igbt 100a 150v SOT227B 123B16
Text: IXGN200N60B3 GenX3TM 600V IGBT VCES = 600V IC110 = 200A VCE sat ≤ 1.50V Medium-Speed Low-Vsat PT IGBT for 5-40kHz Switching SOT-227B, miniBLOC E153432 Ec Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXGN200N60B3
IC110
5-40kHz
OT-227B,
E153432
200N60B3
8-08-A
IXGN200N60B3
9V DC INPUT and gate ic
IGBT 100V 100A
igbt 100a 150v
SOT227B
123B16
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diode AR S1 99
Abstract: S3 DIODE schottky 486 smps
Text: Advanced Technical Information Parallel, Buck & Boost Configurations for SMPS, PFC & Motor Control Circuits S1 HiPerFET MOSFET Diode Test Conditions VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 100 V VGS Continuous ±20 V Transient
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100N10S1
100N10S2
100N10S3
diode AR S1 99
S3 DIODE schottky
486 smps
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680-W
Abstract: 180N15P IXFN180N15P
Text: PolarHTTM HiPerFET IXFN 180N15P Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 150 150 V V VDSS VGSM Continuous
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180N15P
03-23-06-C
680-W
180N15P
IXFN180N15P
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DMA150YA1600NA
Abstract: dma150 SOT227B package IXYS DMA150YA1600NA DMA150YC1600NA
Text: DMA150YA1600NA 3~ Rectifier Standard Rectifier VRRM = 1600 V I DAV = 150 A I FSM = 800 A Half 3~ Bridge, Common Anode Part number DMA150YA1600NA Backside: isolated 1 3 2 4 Features / Advantages: Applications: Package: SOT-227B minibloc ● Planar passivated chips
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DMA150YA1600NA
OT-227B
60747and
20130128a
DMA150YA1600NA
dma150
SOT227B package
IXYS DMA150YA1600NA
DMA150YC1600NA
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Untitled
Abstract: No abstract text available
Text: DSA240X150NA preliminary Schottky Diode Gen ² VRRM = 150 V I FAV = 2x 120 A VF = 0.85 V High Performance Schottky Diode Low Loss and Soft Recovery Parallel legs Part number DSA240X150NA Backside: isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc
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DSA240X150NA
OT-227B
60747and
20131031a
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DPF240X200NA
Abstract: No abstract text available
Text: DPF240X200NA preliminary HiPerFRED² VRRM = 200 V I FAV = 2x 120 A t rr = 55 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs Part number DPF240X200NA Backside: isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc
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DPF240X200NA
OT-227B
highF240X200NA
60747and
20131101a
DPF240X200NA
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T0-220AB
Abstract: SOT-263
Text: MECHANICAL DATA page SOT93 618 SOT 186 619 T0220AB 620 SOT223 621 SOT227B 622 SOT263 623 SOT263 lead form option 624
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T0220AB
OT223
OT227B
OT263
T0-220AB
SOT-263
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T0-220AB
Abstract: SOT-263
Text: MOUNTING INSTRUCTIONS page SOT93 626 SOT186; SOT263; T0220AB 633 SOT227B ISOTOP 639 SOT223 642
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OT186;
OT263;
T0220AB
OT227B
OT223
T0-220AB
SOT-263
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BUK416-200AE
Abstract: t7700
Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION PINNING - SOT227B PIN 1 2 3 4 QUICK REFERENCE DATA SYMBOL isloi DS ON MAX. MAX. UNIT -200AE 200 63 310 0.035 -200BE 200 55 310 0.045 V A W n PARAMETER BUK416 Drain-source voltage
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BUK416-200AE/BE
BUK416
-200AE
-200BE
OT227B
8UK416-2OO0E
BUK416-200AE
t7700
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mbr2506
Abstract: MBR25060V
Text: MOTOROLA Order this document by MBR25060V/D SEMICONDUCTOR TECHNICAL DATA Advance Information MBR25060V SWITCHMODE S ch o ttky Pow er R e c tifie r . . . using the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features:
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MBR25060V/D
E69369
mbr2506
MBR25060V
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SOT227B package
Abstract: mb 428 mb 428 ic data ESM4045A ESM4045D SOT227A 4045D
Text: PHILIPS INTERNATIONAL 45E ]> 7110fl2ti 0031233 T M P HIN ESM4045A V ESM4045D(V) T '- 3 3 - d Q SILICON DARLINGTON POWER TRANSISTORS NPN high-current switching Darlington transistor in ISOTOP package, intended fo r use in m otor drives, converters, switch mode power supplies (SMPS) and uninterruptable power supplies (UPS).
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711082b
ESM4045A
lESM4045D
4045D
ICsat/50
Bon11
Csat/50;
711002b
SOT227B package
mb 428
mb 428 ic data
ESM4045D
SOT227A
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50N6
Abstract: xs 004 a
Text: ADVANCED TECHNICAL INFORMATION v v IXGN 50N60BD3 HîPerFÂST K1BT with HiPerFRED CES ^C25 CE sat = 600 V • 75 A = 2.5 V Buck configuration Symbol B CM Test Conditions SOT-227B, miniBLOC T, = 25°C to 150°C 600 V T. = 25°C to 150°C; RGE = 1 MO 600
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50N60BD3
OT-227B,
50N6
xs 004 a
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