SMT3725ALNF
Abstract: No abstract text available
Text: TITLE: SPECIFICATION CONTROL DRAWING PART IDENTIFIER: SMT3725ALNF DESCRIPTION: SURFACE MOUNT TERMINATION, ALUMINUM NITRIDE, LEAD FREE ASSEMBLY DWG: 1102024 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 IMPEDANCE: 50Ω NOMINAL. 1.1.2 FREQUENCY: DC - 2 GHZ. 1.1.3
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SMT3725ALNF
MIL-PRF-55342
824W154.
755W002.
09-E0830
SMT3725ALNF
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SMT3725ALN
Abstract: No abstract text available
Text: TITLE: SPECIFICATION CONTROL DRAWING PART IDENTIFIER: SMT3725ALN DESCRIPTION: SURFACE MOUNT TERMINATION, ALUMINUM NITRIDE ASSEMBLY DWG: 1101554 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 IMPEDANCE: 50Ω NOMINAL. 1.1.2 FREQUENCY: DC - 2 GHZ. 1.1.3 VSWR: 1.25:1 MAX.
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SMT3725ALN
MIL-PRF-55342
824W154.
755W002.
09-E0830
SMT3725ALN
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Untitled
Abstract: No abstract text available
Text: TITLE: SPECIFICATION CONTROL DRAWING PART IDENTIFIER: SMT3725ALN DESCRIPTION: SURFACE MOUNT TERMINATION, ALUMINUM NITRIDE ASSEMBLY DWG: 1101554 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 IMPEDANCE: 50Ω NOMINAL. 1.1.2 FREQUENCY: DC - 2 GHZ. 1.1.3 VSWR: 1.25:1 MAX.
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SMT3725ALN
MIL-PRF-55342
IP-1014.
MC0023.
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SMT2010TALN
Abstract: smt2010aln SMT2525ALN SMT3737 SMT2525TALN SMT2010 SMT3725 SMT1206ALN SMT3737ALN SMT2010A
Text: Surface Mount Terminations Using EMC’s patented asymmetrical wrap geometry U.S. Patent # 5,739,743 , the thermal dissipation of the surface mount terminations is improved by increasing the solderable terminal area. This eliminates the need for bolt down heat sinks and tabs, reducing assembly costs.
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SMT2525
SMT3725TALN
SMT3725ALN
SMT3725
SMT3737TALN
SMT3737ALN
SMT3737
SMT2010TALN
smt2010aln
SMT2525ALN
SMT3737
SMT2525TALN
SMT2010
SMT3725
SMT1206ALN
SMT3737ALN
SMT2010A
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ATC600F100JT250XT
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from
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MRF8P20100H
MRF8P20100HR3
MRF8P20100HSR3
ATC600F100JT250XT
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tva0300n07
Abstract: mmic amplifier marking code N10 MTVA0300N05 PST-02-A-1 TVA0300N07W3 electronic passive components catalog SC-1016 MTVA0300 SMT2010TALN 42TVA
Text: EMC TECHNOLOGY Custom Engineered Solutions 8851 SW Old Kansas Ave. 772 286-9300 ISO 9001 & 14001 Certified M I C R OWAV E C O M P O N E N T S www.emct.com Resistive Products, Smart Loads , High Reliability Stuart, FL 34997 (800) 544-5594 Thermopads®, Equalizers,
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*J532
Abstract: C5750X7R1H106KT j692 C5750KF1H226ZT SEMICONDUCTOR J598 ATC600F100JT250XT MRF8P20100H SMT3725ALNF ATC600F1R2 J529
Text: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from
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MRF8P20100H
MRF8P20100HR3
MRF8P20100HSR3
*J532
C5750X7R1H106KT
j692
C5750KF1H226ZT
SEMICONDUCTOR J598
ATC600F100JT250XT
MRF8P20100H
SMT3725ALNF
ATC600F1R2
J529
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MRF8P20100HR3
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from
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MRF8P20100H
MRF8P20100HR3
MRF8P20100HSR3
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smt2010aln
Abstract: SMT2010TALN SMT2010A SMT2525 0372
Text: im Technobgi/ S urface M ount Term inations Using EMC's patented asymmetrical wrap geometry U.S. Patent # 5,739,743 , the thermal dissipation o f the surface mount terminations is improved by increasing the solderable terminal area. This eliminates the need for bolt
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SMT1206ALN
SMT1206
SMT2010TALN
SMT2010ALN
SMT2010
SMT2525TALN
SMT2525ALN
SMT2525
SMT3725TALN
SMT3725ALN
SMT2010A
0372
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