SIB914DK
Abstract: SiB914 FET MARKING CODE SiB914DK-T1-GE3 SC-75
Text: New Product SiB914DK Vishay Siliconix Dual N-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)g 0.113 at VGS = 4.5 V 1.5a 0.138 at VGS = 2.5 V 1.5a 0.190 at VGS = 1.8 V 1.5 a 0.280 at VGS = 1.5 V 1.0 0.480 at VGS = 1.2 V 0.3 VDS (V) 8
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SiB914DK
SC-75
SC75-6L-Dual
18-Jul-08
SiB914
FET MARKING CODE
SiB914DK-T1-GE3
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SiB914
Abstract: SC-75 SiB914DK-T1-GE3 SIB914DK
Text: New Product SiB914DK Vishay Siliconix Dual N-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)g 0.113 at VGS = 4.5 V 1.5a 0.138 at VGS = 2.5 V 1.5a 0.190 at VGS = 1.8 V 1.5 a 0.280 at VGS = 1.5 V 1.0 0.480 at VGS = 1.2 V 0.3 VDS (V) 8
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SiB914DK
SC-75
SC75-6L-Dual
11-Mar-11
SiB914
SiB914DK-T1-GE3
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SiB914
Abstract: SiB914dk-t1
Text: New Product SiB914DK Vishay Siliconix Dual N-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)g 0.113 at VGS = 4.5 V 1.5a 0.138 at VGS = 2.5 V 1.5a 0.190 at VGS = 1.8 V 1.5 a 0.280 at VGS = 1.5 V 1.0 0.480 at VGS = 1.2 V 0.3 VDS (V) 8
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SiB914DK
SC-75
SC75-6L-Dual
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SiB914
SiB914dk-t1
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82054
Abstract: SIB914DK 8205* MOSFET SiB914
Text: SPICE Device Model SiB914DK Vishay Siliconix Dual N-Channel 1.2-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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SiB914DK
S-82054-Rev.
01-Sep-08
82054
8205* MOSFET
SiB914
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SiB914
Abstract: 82054
Text: SPICE Device Model SiB914DK Vishay Siliconix Dual N-Channel 1.2-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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SiB914DK
18-Jul-08
SiB914
82054
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Untitled
Abstract: No abstract text available
Text: New Product SiB914DK Vishay Siliconix Dual N-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)g 0.113 at VGS = 4.5 V 1.5a 0.138 at VGS = 2.5 V 1.5a a VDS (V) 8 0.190 at VGS = 1.8 V 1.5 0.280 at VGS = 1.5 V 1.0 0.480 at VGS = 1.2 V 0.3
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SiB914DK
SC75-6L-Dual
SC-75
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product SiB914DK Vishay Siliconix Dual N-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)g 0.113 at VGS = 4.5 V 1.5a 0.138 at VGS = 2.5 V 1.5a 0.190 at VGS = 1.8 V 1.5 a 0.280 at VGS = 1.5 V 1.0 0.480 at VGS = 1.2 V 0.3 VDS (V) 8
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SiB914DK
SC-75
SC75-6L-Dual
11-Mar-11
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AN609
Abstract: SiB914
Text: SiB914DK_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,
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SiB914DK
AN609,
17-Jul-08
AN609
SiB914
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Untitled
Abstract: No abstract text available
Text: New Product SiB914DK Vishay Siliconix Dual N-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)g 0.113 at VGS = 4.5 V 1.5a 0.138 at VGS = 2.5 V 1.5a 0.190 at VGS = 1.8 V 1.5 a 0.280 at VGS = 1.5 V 1.0 0.480 at VGS = 1.2 V 0.3 VDS (V) 8
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SiB914DK
SC-75
SC75-6L-Dual
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SiB914
Abstract: Si4230 LTC4365ITS8 LT3850 LTC4356 LTC4365 marking r4b diode LTC4365C 12V 1A MOSFET N-channel LTC4365HDDB
Text: LTC4365 UV, OV and Reverse Supply Protection Controller FEATURES DESCRIPTION n The LTC 4365 protects applications where power supply input voltages may be too high, too low or even negative. It does this by controlling the gate voltages of a pair of external N-channel MOSFETs to ensure that the output
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LTC4365
10oldback
LTC4260
LTC4352
LTC4354
LTC4355
4365f
SiB914
Si4230
LTC4365ITS8
LT3850
LTC4356
LTC4365
marking r4b diode
LTC4365C
12V 1A MOSFET N-channel
LTC4365HDDB
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Untitled
Abstract: No abstract text available
Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - 1.6 mm x 1.6 mm Footprint with Low On-Resistance PowerPAK SC-75 Ultra-Low On-Resistance, and Ultra-Small Size Key features • PowerPAK® SC-75 provides same tiny 1.6 mm x 1.6 mm footprint as standard SC-75, but with
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SC-75
SC-75
SC-75,
appli32
SiB437EDKT
SiB441EDK
SiB457EDK
SiB433EDK
SiB914DK
SiB912DK
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LT3850
Abstract: No abstract text available
Text: LTC4365 UV, OV and Reverse Supply Protection Controller FEATURES n n n n n n n n n n n DESCRIPTION Wide Operating Voltage Range: 2.5V to 34V Overvoltage Protection to 60V Reverse Supply Protection to –40V Blocks 50Hz and 60Hz AC Power No Input Capacitor or TVS Required for Most
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LTC4365
TSOT-23
LTC4260
LTC4352
LTC4354
LTC4355
4365f
LT3850
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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Untitled
Abstract: No abstract text available
Text: Vishay Intertechnology, Inc. Alternative Energy Energy Exploration One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Alternative Energy エネルギー探査 油層探鉱 4 採鉱 5 The Engineer’s Toolbox highlights, by market application, some innovative components Vishay
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VMN-MS6792-1304-AEEE
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SiB914
Abstract: LT3850 TRANZORB 4925 B mosfet Si4230 LTC4365 SI4946 SI9945 tranz LTC4365ITS8
Text: LTC4365 UV, OV and Reverse Supply Protection Controller FEATURES n n n n n n n n n n n DESCRIPTION Wide Operating Voltage Range: 2.5V to 34V Overvoltage Protection to 60V Reverse Supply Protection to –40V Blocks 50Hz and 60Hz AC Power No Input Capacitor or TVS Required for Most
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LTC4365
TSOT-23
LTC4260
LTC4352
LTC4354
LTC4355
LTC3827/LTC3827-1
4365f
SiB914
LT3850
TRANZORB
4925 B mosfet
Si4230
LTC4365
SI4946
SI9945
tranz
LTC4365ITS8
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SI1489EDH
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - On-Resistance Ratings at VGS = 1.2 V 1.2 V Rated MOSFETs Industry’s First Load Switches Designed for On-Resistance Ratings at 1.2 V KEY BENEFITS • Optimized for use with the low-voltage core ICs in portable electronics systems
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SiA920DJ
SC-70
SiB914DK
SC-75
Si1011X
Si8805EDB
com/mosfets/12-rated-on-res/
com/mosfets/15-rated-on-res/
VMN-PT0103-1402
SI1489EDH
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Untitled
Abstract: No abstract text available
Text: Vishay Intertechnology, Inc. Alternative Energy Energy Exploration One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Alternative Energy Energy Exploration Oil Prospecting 4 Mining 5 The Engineer’s Toolbox highlights, by market application, some innovative components Vishay
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VMN-MS6761-1212
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SiB914
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 1.6 mm x 1.6 mm Footprint with Low On-Resistance AND TEC I INNOVAT O L OGY PowerPAK SC-75 N HN POWER MOSFETs O 19 62-2012 Ultra-Low On-Resistance, and Ultra-Small Size KEY FEATURES • PowerPAK® SC-75 provides same tiny 1.6 mm x 1.6 mm footprint as standard SC-75, but with
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SC-75
SC-75
SC-75,
space-const19
com/mosfets/powerpak-sc-75-package/
VMN-PT0196-1209
SiB914
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si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®
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Mediu33-4-9337-2727
VMN-SG2127-1210
si7121
Si4914B
SI-4102
SI4599
Si4483A
sir166
irfd120
si7949
si4459a
SIR836
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SiB914
Abstract: SiA427DJ si2329ds si8802
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - On-Resistance Ratings at VGS = 1.2 V AND TEC I INNOVAT O L OGY 1.2 V Rated MOSFETs N HN POWER MOSFETs O 19 62-2012 Industry’s First Load Switches Designed for On-Resistance Ratings at 1.2 V KEY BENEFITS
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SC-70
SC-75
com/mosfets/12-rated-on-res/
com/mosfets/15-rated-on-res/
VMN-PT0103-1209
SiB914
SiA427DJ
si2329ds
si8802
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220v AC voltage stabilizer schematic diagram
Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585
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AD9272
P462-ND
LNG295LFCP2U
P463-ND
LNG395MFTP5U
220v AC voltage stabilizer schematic diagram
LG color tv Circuit Diagram tda 9370
1000w inverter PURE SINE WAVE schematic diagram
schematic diagram atx Power supply 500w
TV SHARP IC TDA 9381 PS
circuit diagram wireless spy camera
9744 mini mainboard v1.2
sony 279-87
transistor E 13005-2
superpro lx
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Diode SOT-23 marking 15d
Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs
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Diod92
VMN-SG2127-0911
Diode SOT-23 marking 15d
SI4210
si4812b
SI-4102
SI7149DP
SiM400
si4932
si7135
SiB914
SI4477
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SC-89-6
Abstract: SiB914
Text: Power mosfets O n - Re sista nce Rating s at V GS = 1. 2 V S M O S F E ts Key Benefits • Optimized for use with the low-voltage core ICs in portable electronics systems • Allow the driver voltage to turn on the switch from a lower output voltage than 1.8 V, reducing the need for level shift circuitry
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VMN-PT0103-0802
SC-89-6
SiB914
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