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    SI4835 Search Results

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    SI4835 Price and Stock

    Vishay Siliconix SI4835DDY-T1-GE3

    MOSFET P-CH 30V 13A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4835DDY-T1-GE3 Digi-Reel 8,316 1
    • 1 $1.77
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    • 1000 $0.54442
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    SI4835DDY-T1-GE3 Cut Tape 8,316 1
    • 1 $1.77
    • 10 $1.123
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    • 1000 $0.54442
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    SI4835DDY-T1-GE3 Reel 2,500 2,500
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    RS SI4835DDY-T1-GE3 Bulk 2,500
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    Vishay Siliconix SI4835DDY-T1-E3

    MOSFET P-CH 30V 13A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4835DDY-T1-E3 Cut Tape 4,728 1
    • 1 $1.77
    • 10 $1.123
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    • 1000 $0.54442
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    SI4835DDY-T1-E3 Digi-Reel 4,728 1
    • 1 $1.77
    • 10 $1.123
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    SI4835DDY-T1-E3 Reel 2,500 2,500
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    RS SI4835DDY-T1-E3 Bulk 2,500
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    Quest Components SI4835DDY-T1-E3 414
    • 1 $0.9
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    • 100 $0.42
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    Skyworks Solutions Inc SI4835-B30-GU

    RF RX AM/FM 504KHZ-1.75MHZ SSOP
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    DigiKey SI4835-B30-GU Tube 79 1
    • 1 $4.8
    • 10 $3.664
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    • 1000 $2.54308
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    Mouser Electronics SI4835-B30-GU 57
    • 1 $4.17
    • 10 $2.91
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    • 1000 $2.49
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    Richardson RFPD SI4835-B30-GU 1
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    Rochester Electronics LLC SI4835DY

    P-CHANNEL MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4835DY Bulk 1,298
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    Skyworks Solutions Inc SI4835-DEMO

    BOARD DEMO SI4831 SI4835 24-SSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4835-DEMO Bulk 1
    • 1 $37.88
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    SI4835 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4835-B30-GU Silicon Laboratories RF Receivers, RF/IF and RFID, IC RCVR AM/FM/SW RADIO 24SSOP Original PDF
    SI4835-B30-GUR Silicon Laboratories RF Receivers, RF/IF and RFID, IC RCVR AM/FM/SW RADIO 24SSOP Original PDF
    SI4835BDY Vishay Siliconix MOSFETs Original PDF
    SI4835BDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET Original PDF
    SI4835BDY Vishay Telefunken P-channel 30-v (d-s) Mosfet Original PDF
    SI4835BDY-T1 Vishay Telefunken Original PDF
    SI4835BDY-T1-E3 Vishay Siliconix MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-9.6A; On-Resistance, Rds(on):18mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:SO-8; Leaded Process Compatible:Yes RoHS Compliant: Yes Original PDF
    SI4835DDY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 13A 8-SOIC Original PDF
    SI4835DDY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 13A 8-SOIC Original PDF
    SI4835-DEMO Silicon Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD DEMO SI4831 SI4835 24-SSOP Original PDF
    SI4835DY Fairchild Semiconductor P-Channel Logic Level PowerTrench MOSFET Original PDF
    SI4835DY Vishay P-Channel 30-V (D-S) MOSFET Original PDF
    Si4835DY Vishay Intertechnology P-Channel 30-V (D-S) MOSFET Original PDF
    Si4835DY SPICE Device Model Vishay P-Channel 30-V (D-S) MOSFET Original PDF
    SI4835DY-T1 Vishay Telefunken FET Transistor, P Channel, 1 VThreshold, ID ±8 A, SOP, Tape and Reel Original PDF

    SI4835 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SI4835BDY-T1-E3

    Abstract: Si4835DY SI4835BDY Si4835BDY-E3 Si4835BDY-T1 Si4835DY-T1 15TR13
    Text: Specification Comparison Vishay Siliconix Si4835BDY vs. Si4835DY Description: P-Channel, 30 V D-S MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si4835BDY Replaces Si4835DY Si4835BDY-E3 (Lead (Pb)-free version) Replaces Si4835DY Si4835BDY-T1 Replaces Si4835DY-T1


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    PDF Si4835BDY Si4835DY Si4835BDY-E3 Si4835BDY-T1 Si4835DY-T1 Si4835BDY-T1-E3 15TR13

    Si4835BDY

    Abstract: 39TV
    Text: Si4835BDY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) D TrenchFETr Power MOSFET D Advanced High Cell Density Process rDS(on) (W) ID (A) 0.018 @ VGS = - 10 V - 9.6 APPLICATIONS 0.030 @ VGS = - 4.5 V - 7.5 D Load Switches


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    PDF Si4835BDY S-03327--Rev. 03-Mar-03 39TV

    Si4835BDY

    Abstract: Si4835BDY-T1
    Text: Si4835BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.018 @ VGS = −10 V −9.6 0.030 @ VGS = −4.5 V −7.5 D TrenchFETr Power MOSFET D Advanced High Cell Density Process D 100% Rg Tested Qg (Typ)


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    PDF Si4835BDY Si4835BDY-T1 Si4835BDY--E3 Si4835BDY-T1--E3 S-41912--Rev. 25-Oct-04

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4835DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.018 at VGS = - 10 V - 13 0.030 at VGS = - 4.5 V - 10 VDS (V) - 30 • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


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    PDF Si4835DDY Si4835DDY-T1-E3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si4835BDY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) D TrenchFETr Power MOSFET D Advanced High Cell Density Process rDS(on) (W) ID (A) 0.018 @ VGS = -10 V -9.6 APPLICATIONS 0.030 @ VGS = -4.5 V - 7.5 D Load Switches


    Original
    PDF Si4835BDY S-21937--Rev. 04-Nov-02

    1232n-s

    Abstract: 1232ns Si4835DY P-Channel 30 V D-S MOSFET
    Text: SPICE Device Model Si4835DY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    PDF Si4835DY 30-Nov-98 1232n-s 1232ns P-Channel 30 V D-S MOSFET

    PC515

    Abstract: PC-515 PD500 2n7002 SFPJ-73 PR503 pc513 1U-0805 PQ501 PC511
    Text: 1 2 3 4 7 8 1 L2 PQ2 SI4835DY SO8 L3 PL503 BEAD 0805C PF500 6.5A/32VDC 1206 PD1 RLZ24D MLL34B PC500 100U 25V PR5 0.02_1% 2512 PL505 75UH . L1 ADINP S D 3 2 1 6 ADINP 25 PL500 BEAD 0805C 1 5 PD504 SFPJ-73 DC2010 L5. L4 L6 BATT 25 G CONN_JACK20 PJ500 PC1 0.1U


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    PDF PL500 0805C PL503 PF500 A/32VDC RLZ24D MLL34B PC500 SI4835DY PC515 PC-515 PD500 2n7002 SFPJ-73 PR503 pc513 1U-0805 PQ501 PC511

    Si4835DDY

    Abstract: Si4835DDY-T1-GE3 Si4835BDY Si4835BDY-T1-E3 Si4835DDY-T1-E3 SI4835 Si4835BDY-T1 dsa0020630
    Text: Specification Comparison Vishay Siliconix Si4835DDY vs. Si4835BDY Description: Package: Pin Out: P-Channel, 30-V D-S MOSFET SO-8 Identical Part Number Replacements: Si4835DDY-T1-E3 or Si4835DDY-T1-GE3 replaces Si4835BDY-T1-E3 Si4835DDY-T1-E3 or Si4835DDY-T1-GE3 replaces Si4835BDY-T1


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    PDF Si4835DDY Si4835BDY Si4835DDY-T1-E3 Si4835DDY-T1-GE3 Si4835BDY-T1-E3 Si4835BDY-T1 SI4835 dsa0020630

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4835DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A)d 0.018 at VGS = - 10 V - 13 0.030 at VGS = - 4.5 V - 10 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


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    PDF Si4835DDY Si4835DDY-T1-E3 Si4835DDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    60703

    Abstract: Si4835DY
    Text: Si4835DY Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.019 @ VGS = –10 V "8.0 0.033 @ VGS = –4.5 V "6.0 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


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    PDF Si4835DY S-60703--Rev. 30-Nov-98 60703

    Si4835DDY-T1-E3

    Abstract: Si4835DDY 80433
    Text: New Product Si4835DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.018 at VGS = - 10 V - 13 0.030 at VGS = - 4.5 V - 10 VDS (V) - 30 • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


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    PDF Si4835DDY Si4835DDY-T1-E3 08-Apr-05 80433

    4835 fairchild

    Abstract: 4835 mosfet mosfet 4835 Si4835DY 4835 so-8 4835 b
    Text: Si4835DY P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


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    PDF Si4835DY 4835 fairchild 4835 mosfet mosfet 4835 4835 so-8 4835 b

    am sw fm radio PCB schematic diagram

    Abstract: 4831B30GU 4835b Si4831-B30 FM Receiver Schematic SI4835 radio Si4835-B30 pot 100k AN555 FM receiver integrated circuit automatic tune
    Text: Si4831/35-B30 B R O A D C A S T M E C H A N I C A L TU N I N G A M / F M / S W R A D I O R EC EIVER Features        Worldwide FM band support 64–109 MHz Worldwide AM band support (504–1750 kHz) SW band support (Si4835 only) (5.6–22 MHz)


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    PDF Si4831/35-B30 Si4835 EN55020-compliant 24-pin am sw fm radio PCB schematic diagram 4831B30GU 4835b Si4831-B30 FM Receiver Schematic SI4835 radio Si4835-B30 pot 100k AN555 FM receiver integrated circuit automatic tune

    4835 fairchild

    Abstract: 4835 mosfet Si4835DY 4835 b 19-NC
    Text: Si4835DY P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


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    PDF FDS6685 Si4835DY 4835 fairchild 4835 mosfet 4835 b 19-NC

    74184

    Abstract: Si4835CDY
    Text: SPICE Device Model Si4835CDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    PDF Si4835CDY 18-Jul-08 74184

    Si4835CDY

    Abstract: No abstract text available
    Text: Si4835CDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.017 at VGS = - 10 V - 9.6 0.030 at VGS = - 4.5 V - 7.5 Qg (Typ) - 22 • TrenchFET Power MOSFETS • Advanched High Cell Density Process • 100 % Rg Tested


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    PDF Si4835CDY 18-Jul-08

    74625

    Abstract: 4113 9940 AN609 Si4835BDY 74107N
    Text: Si4835BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    PDF Si4835BDY AN609 14-May-07 74625 4113 9940 74107N

    Si4835DY

    Abstract: Si4835DY-T1
    Text: Si4835DY Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) ID (A) 0.019 @ VGS = - 10 V - 8.0 0.033 @ VGS = - 4.5 V - 6.0 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D Ordering Information: Si4835DY Si4835DY-T1 (with Tape and Reel)


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    PDF Si4835DY Si4835DY-T1 08-Apr-05

    Si4835DDY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4835DDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


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    PDF Si4835DDY 18-Jul-08

    Si4835BDY

    Abstract: Si4835BDY-T1
    Text: Si4835BDY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) D TrenchFETr Power MOSFET D Advanced High Cell Density Process rDS(on) (W) ID (A) 0.018 @ VGS = - 10 V - 9.6 APPLICATIONS 0.030 @ VGS = - 4.5 V - 7.5 D Load Switches


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    PDF Si4835BDY Si4835BDY-T1 S-31062--Rev. 26-May-03

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4835DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A)d 0.018 at VGS = - 10 V - 13 0.030 at VGS = - 4.5 V - 10 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


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    PDF Si4835DDY Si4835DDY-T1-E3 Si4835DDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    S-41912

    Abstract: Si4835BDY Si4835BDY-T1
    Text: Si4835BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.018 @ VGS = −10 V −9.6 0.030 @ VGS = −4.5 V −7.5 D TrenchFETr Power MOSFET D Advanced High Cell Density Process D 100% Rg Tested Qg (Typ)


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    PDF Si4835BDY Si4835BDY-T1 Si4835BDY--E3 Si4835BDY-T1--E3 08-Apr-05 S-41912

    4831b30gu

    Abstract: 4835B30GU SI4835-B30-GU Si4831-B30 Si4835 si4831 Si483x-B si4830 4835b si4835 an555
    Text: Si4831/35-B30 广播机械调谐 AM/FM/SW 无线电接收器 特征        支持全球 FM 波段 64–109 MHz 支持全球 AM 波段 (504–1750 kHz) 支持 SW 波段 (Si4835 独有 ) (5.6–22 MHz) 卓越的真实世界性能 依据 EN55020 标准


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    PDF Si4831/35-B30 Si4835 EN55020 Si4831/35-B30CMOS// Si4831/-B AN569: Si4831/35-DEMO 4831b30gu 4835B30GU SI4835-B30-GU Si4831-B30 Si4835 si4831 Si483x-B si4830 4835b si4835 an555

    Si4835DDY

    Abstract: Si4835DDY-T1-E3 Si4835DDY-T1-GE3
    Text: New Product Si4835DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A)d 0.018 at VGS = - 10 V - 13 0.030 at VGS = - 4.5 V - 10 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


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    PDF Si4835DDY Si4835DDY-T1-E3 Si4835DDY-T1-GE3 18-Jul-08