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onsemi SI4435DY MOSFET P-CH 30V 8.8A 8SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4435DY	Digi-Reel	33,837		1	1 $1.22 10 $0.822 100 $1.22 1000 $0.42415 10000 $0.42415	Buy Now
	SI4435DY	Cut Tape	33,837		1	1 $1.22 10 $0.822 100 $1.22 1000 $0.42415 10000 $0.42415	Buy Now
	SI4435DY	Reel	32,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.36575	Buy Now
Avnet Americas	SI4435DY	Reel			2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
	SI4435DY	Reel			2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	SI4435DY		11,564			1 $1.12 10 $0.804 100 $0.573 1000 $0.425 10000 $0.365	Buy Now
Newark	SI4435DY	Cut Tape	12,049		5	1 $0.926 10 $0.727 100 $0.639 1000 $0.547 10000 $0.547	Buy Now
	SI4435DY	Reel	5,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.398	Buy Now
Bristol Electronics	SI4435DY		996			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Quest Components	SI4435DY		796			1 $1.36 10 $1.36 100 $0.68 1000 $0.544 10000 $0.544	Buy Now
TME	SI4435DY		1,977		1	1 $0.956 10 $0.759 100 $0.51 1000 $0.484 10000 $0.484	Buy Now
Ameya Holding Limited	SI4435DY		596			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Asia	SI4435DY				2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	SI4435DY			17 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip Stock	SI4435DY		11,746			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SI4435DY			18 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG SI4435DYTRPBF MOSFET P-CH 30V 8A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4435DYTRPBF	Digi-Reel	29,688		1	1 $1.4 10 $0.884 100 $1.4 1000 $0.41683 10000 $0.38222	Buy Now
	SI4435DYTRPBF	Cut Tape	29,688		1	1 $1.4 10 $0.884 100 $1.4 1000 $0.41683 10000 $0.38222	Buy Now
	SI4435DYTRPBF	Reel	24,000		4,000	1 - 10 - 100 - 1000 - 10000 $0.32863	Buy Now
Avnet Americas	SI4435DYTRPBF	Reel	4,000	12 Weeks	4,000	1 - 10 - 100 - 1000 - 10000 $0.2642	Buy Now
	SI4435DYTRPBF	Ammo Pack		16 Weeks, 3 Days	1	1 $0.853 10 $0.694 100 $0.547 1000 $0.547 10000 $0.547	Buy Now
Mouser Electronics	SI4435DYTRPBF		1,077			1 $0.82 10 $0.689 100 $0.541 1000 $0.397 10000 $0.321	Buy Now
Verical	SI4435DYTRPBF		9,641		98	1 - 10 - 100 $0.3188 1000 $0.3087 10000 $0.3087	Buy Now
	SI4435DYTRPBF		8,000		4,000	1 - 10 - 100 - 1000 - 10000 $0.4061	Buy Now
	SI4435DYTRPBF		1,480		935	1 - 10 - 100 - 1000 $0.379 10000 $0.379	Buy Now
Arrow Electronics	SI4435DYTRPBF		8,000	12 Weeks	4,000	1 - 10 - 100 - 1000 - 10000 $0.3019	Buy Now
	SI4435DYTRPBF	Cut Strips	18	12 Weeks	1	1 $0.4741 10 $0.2879 100 $0.2879 1000 $0.2879 10000 $0.2879	Buy Now

Newark	SI4435DYTRPBF	Cut Tape	218		1	1 $0.853 10 $0.694 100 $0.547 1000 $0.392 10000 $0.392	Buy Now
	SI4435DYTRPBF	Reel			4,000	1 - 10 - 100 - 1000 - 10000 $0.334	Buy Now
Rochester Electronics	SI4435DYTRPBF		1,480		1	1 $0.3567 10 $0.3567 100 $0.3353 1000 $0.3032 10000 $0.3032	Buy Now
TME	SI4435DYTRPBF		3,905		1	1 $0.789 10 $0.596 100 $0.47 1000 $0.347 10000 $0.305	Buy Now
Chip1Stop	SI4435DYTRPBF	Cut Tape	9,641			1 - 10 $0.613 100 $0.465 1000 $0.337 10000 $0.243	Buy Now
EBV Elektronik	SI4435DYTRPBF			13 Weeks	4,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Win Source Electronics	SI4435DYTRPBF		3,393			1 - 10 - 100 - 1000 $0.3007 10000 $0.3007	Buy Now
Vishay Siliconix SI4435DDY-T1-E3 MOSFET P-CH 30V 11.4A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4435DDY-T1-E3	Cut Tape	16,365		1	1 $1.13 10 $0.707 100 $1.13 1000 $0.32557 10000 $0.32557	Buy Now
	SI4435DDY-T1-E3	Digi-Reel	16,365		1	1 $1.13 10 $0.707 100 $1.13 1000 $0.32557 10000 $0.32557	Buy Now
	SI4435DDY-T1-E3	Reel	15,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.2891	Buy Now
RS	SI4435DDY-T1-E3	Bulk			2,500	1 - 10 - 100 - 1000 - 10000 $0.58	Get Quote
New Advantage Corporation	SI4435DDY-T1-E3		15,000		1	1 - 10 - 100 - 1000 - 10000 $0.3214	Buy Now
Vishay Siliconix SI4435DDY-T1-GE3 MOSFET P-CH 30V 11.4A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4435DDY-T1-GE3	Digi-Reel	16,177		1	1 $1.13 10 $0.707 100 $1.13 1000 $0.32557 10000 $0.32557	Buy Now
	SI4435DDY-T1-GE3	Cut Tape	16,177		1	1 $1.13 10 $0.707 100 $1.13 1000 $0.32557 10000 $0.32557	Buy Now
	SI4435DDY-T1-GE3	Reel	15,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.2891	Buy Now
RS	SI4435DDY-T1-GE3	Bulk			2,500	1 - 10 - 100 - 1000 - 10000 $0.72	Get Quote
	SI4435DDY-T1-GE3	Bulk			2,500	1 - 10 - 100 - 1000 - 10000 $0.7	Get Quote
Quest Components	SI4435DDY-T1-GE3		28			1 $0.72 10 $0.6 100 $0.6 1000 $0.6 10000 $0.6	Buy Now
New Advantage Corporation	SI4435DDY-T1-GE3		105,000		1	1 - 10 - 100 - 1000 - 10000 $0.2529	Buy Now
Vishay Siliconix SI4435FDY-T1-GE3 MOSFET P-CH 30V 12.6A 8SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4435FDY-T1-GE3	Cut Tape	1,348		1	1 $0.61 10 $0.375 100 $0.61 1000 $0.16238 10000 $0.16238	Buy Now
	SI4435FDY-T1-GE3	Digi-Reel	1,348		1	1 $0.61 10 $0.375 100 $0.61 1000 $0.16238 10000 $0.16238	Buy Now
New Advantage Corporation	SI4435FDY-T1-GE3		5,000		1	1 - 10 - 100 - 1000 - 10000 $0.1292	Buy Now

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SI4435 Datasheets (22)

Part	Manufacturer	Description	Datasheet Type	PDF
SI4435BDY	Vishay	TRANSISTOR, P-CHANNEL MOSFET, 30V, SOIC-8	Original	PDF
SI4435BDY	Vishay Siliconix	MOSFETs	Original	PDF
Si4435BDY	Vishay Telefunken	P-channel 30-v (d-s) Mosfet	Original	PDF
Si4435BDY SPICE Device Model	Vishay	P-Channel 30-V (D-S) MOSFET	Original	PDF
SI4435BDY-T1-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 7A 8-SOIC	Original	PDF
SI4435DDY-T1-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 11.4A 8SOIC	Original	PDF
SI4435DDY-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 11.4A 8-SOIC	Original	PDF
Si4435DY	Fairchild Semiconductor	P-Channel Logic Level PowerTrench MOSFET	Original	PDF
SI4435DY	Fairchild Semiconductor	30V P-Channel PowerTrench MOSFET	Original	PDF
SI4435DY	International Rectifier	HEXFET Power MOSFET	Original	PDF
SI4435DY	Kexin	P-Channel MOSFET	Original	PDF
Si4435DY	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
Si4435DY	International Rectifier	HEXFET Power MOSFET	Scan	PDF
SI4435DY_NF073	Fairchild Semiconductor	30V P-Channel PowerTrench MOSFET	Original	PDF

SI4435DY_NL	Fairchild Semiconductor	30V P-Channel PowerTrench MOSFET	Original	PDF
SI4435DYPBF	International Rectifier	HEXFET Power MOSFET	Original	PDF
SI4435DY-REVA	Vishay Telefunken	P-Channel 30-V (D-S) MOSFET	Original	PDF
SI4435DY-REVA	Siliconix	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, P-Channel, -30V, Single, Pkg Style TSSOP-8	Scan	PDF
Si4435DY SPICE Device Model	Vishay	P-Channel 30-V (D-S) MOSFET	Original	PDF
SI4435DYTR	International Rectifier	-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package	Original	PDF

SI4435 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
7w66 Abstract: Si4435DY D665 Text: Si4435DY P-Channel Logic Level PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching	Original	PDF	Si4435DY 7w66 D665
Si64 Abstract: 51361 Si4435DY Si4953DY Si6435DQ Si9435DY Si94 Text: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S	Original	PDF	Si9435DY Si4435DY Si4953DY Si6435DQ S-51361--Rev. 18-Dec-96 Si64 51361 Si94
Si4435DY Abstract: No abstract text available Text: Si4435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.02 @ VGS = –10 V "8.0 0.035 @ VGS = –4.5 V "6.0 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)	Original	PDF	Si4435DY S-47958--Rev. 15-Apr-96
Si4435DY Abstract: No abstract text available Text: Si4435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.02 @ VGS = –10 V "8.0 0.035 @ VGS = –4.5 V "6.0 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)	Original	PDF	Si4435DY S-47958--Rev. 15-Apr-96
SI4435BDY-T1 Abstract: Si4435BDY Text: Si4435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.020 @ VGS = −10 V −9.1 0.035 @ VGS = −4.5 V −6.9 D TrenchFETr Power MOSFET D Advanced High Cell Density Process D Lead (Pb)-Free Version is RoHS	Original	PDF	Si4435BDY Si4435BDY-T1 Si4435BDY-T1--E3 08-Apr-05
SI4435DY Abstract: AN609 74549N Text: Si4435DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	PDF	Si4435DY AN609 31-Aug-05 74549N
Si4435DDY Abstract: Si4435DDY-T1-E3 Si4435DDY-T1-GE3 Text: New Product Si4435DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.024 at VGS = - 10 V - 11.4 0.035 at VGS = - 4.5 V - 9.4 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si4435DDY 2002/95/EC Si4435DDY-T1-E3 Si4435DDY-T1-GE3 18-Jul-08
Untitled Abstract: No abstract text available Text: SPICE Device Model Si4435DDY www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	Si4435DDY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
S-49534 Abstract: Si4435DY Text: Si4435DY P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 30 rDS(on) (W) ID (A) 0.02 @ VGS = –10 V "8.0 0.035 @ VGS = –4.5 V "6.0 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)	Original	PDF	Si4435DY S-49534--Rev. 06-Oct-97 S-49534
IRF7101 Abstract: Si4435DYPbF Text: PD- 95133 Si4435DYPbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free A D 1 8 2 7 D S 3 6 D G 4 5 D S S VDSS = -30V RDS on = 0.020Ω Top View Description These P-channel HEXFET® Power MOSFETs from	Original	PDF	Si4435DYPbF EIA-481 EIA-541. IRF7101
S-49534 Abstract: Si4435DY Text: Si4435DY P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 rDS(on) (W) ID (A) 0.02 @ VGS = –10 V "8.0 0.035 @ VGS = –4.5 V "6.0 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)	Original	PDF	Si4435DY S-49534--Rev. 06-Oct-97 S-49534
Si4435DY Abstract: Si4953DY Si6435DQ Si9430DY Text: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S	Original	PDF	Si9430DY Si4435DY Si4953DY Si6435DQ S-51360--Rev. 18-Dec-96
Si4435DY Abstract: Si4953DY Si6435DQ Si9435DY Text: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ	Original	PDF	Si9435DY Si4435DY Si4953DY Si6435DQ S-47958--Rev. 15-Apr-96
Si9430DY Abstract: Si4435DY Si4953DY Si6435DQ Text: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ	Original	PDF	Si9430DY Si4435DY Si4953DY Si6435DQ S-47958--Rev. 15-Apr-96

Si4435DY Abstract: Si4953DY Si6435DQ Si9435DY Text: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ	Original	PDF	Si9435DY Si4435DY Si4953DY Si6435DQ S-47958--Rev. 15-Apr-96
Si4435DY Abstract: Si4953DY Si6435DQ Si9430DY Text: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S	Original	PDF	Si9430DY Si4435DY Si4953DY Si6435DQ S-51360--Rev. 18-Dec-96
Si4435BDY Abstract: No abstract text available Text: Si4435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.020 @ VGS = −10 V −9.1 0.035 @ VGS = −4.5 V −6.9 D TrenchFETr Power MOSFET D Advanced High Cell Density Process D Lead (Pb)-Free Version is RoHS	Original	PDF	Si4435BDY Si4435BDY-T1 Si4435BDY-T1--E3 18-Jul-08
Si4435DY Abstract: si4435 Text: SI4435DY 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive	Original	PDF	SI4435DY Si4435DY si4435
PL504 Abstract: PQ508 PC525 PR521 PC515 PD510 PC523 RLZ20C mitac 6120 PR518 Text: PQ508 SI4435DY PD509 A PL1 A 1 2 6 VADJ_1 5 PQ1B NDC7002N 1 2 VADJ_2 5 PR9 1M 0603 1% 1 2 1 PQ1A NDC7002N 2 2 1 PR6 1M 0603 1% 1 PR7 1M 0603 1% 2 1M 0603 1% 1 PR3 34K 0603 1% PR507 34K 0603 1% 2 PR2 2 PR4 10K 0603B 1% 1 1 1 PC6 1000P 0603B 10%,X7R 2 PR508	Original	PDF	PQ508 SI4435DY 80UH/33T/D PD506 SFPJ-73 DC2010 PR517 PC524 PL504 PC525 PR521 PC515 PD510 PC523 RLZ20C mitac 6120 PR518
Si4435BDY Abstract: si4435 Text: SPICE Device Model Si4435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si4435BDY 18-Jul-08 si4435
SI4435DY Abstract: SI4435DY-T1 Text: Si4435DY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –30 30 rDS(on) (W) ID (A) 0.02 @ VGS = –10 V –8.0 0.035 @ VGS = –4.5 V –6.0 D Lead (Pb)-Free Version is RoHS Compliant S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G	Original	PDF	Si4435DY Si4435DY-T1 18-Jul-08
AN609 Abstract: Si4435DDY Text: Si4435DDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,	Original	PDF	Si4435DDY AN609, 30-Jul-08 AN609
PR40 Abstract: js27 C598 BKLVMAIN SFPJ-73 JS11 Text: 1 2 3 4 5 6 7 8 1 1 PD2 SFPJ-73 DC2010 EMI2 24 ADINP PL1 BEAD_120Z/100M_6A 2012 26,27 D_VMAIN PR40 100K 0603 VMAIN JO5 D_VMAIN 26,27 OPEN-SMT4_DFS S VDD5 PQ505 SI4435DY SO8 PR35 261K_1% 0603 JS10 R170 100K 0603 GND R551 33K 0603 D_VMAIN 26,27 19 BKL_VMAIN	Original	PDF	SFPJ-73 DC2010 120Z/100M PC501 PQ506 DTC144WK PQ507 2N7002 LMV393 2N7002 PR40 js27 C598 BKLVMAIN JS11
Untitled Abstract: No abstract text available Text: New Product Si4435DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.024 at VGS = - 10 V - 11.4 0.035 at VGS = - 4.5 V - 9.4 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si4435DDY 2002/95/EC Si4435DDY-T1-E3 Si4435DDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

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onsemi SI4435DY

Infineon Technologies AG SI4435DYTRPBF

Vishay Siliconix SI4435DDY-T1-E3

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SI4435 Datasheets (22)

SI4435 Datasheets Context Search

7w66

Si64

Si4435DY

Si4435DY

SI4435BDY-T1

SI4435DY

Si4435DDY

Untitled

S-49534

IRF7101

S-49534

Si4435DY

Si4435DY

Si9430DY

Si4435DY

Si4435DY

Si4435BDY

Si4435DY

PL504

Si4435BDY

SI4435DY

AN609

PR40

Untitled