Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SDF2N100 Search Results

    SDF2N100 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SDF2N100 Solitron Devices VDS (V) = 1000, Id Continuous Tc=25C (A) = 2, Idm Pulsed (A) = 8, RDS (On) (Ohms)... Scan PDF
    SDF2N100JAAD Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF2N100JAAS Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF2N100JAAU Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF2N100JABD Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF2N100JABS Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF2N100JABU Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF

    SDF2N100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SDF2N100JABVGD1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)1.0k V(BR)GSS (V)20 I(D) Max. (A)2.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)8.0 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55


    Original
    PDF SDF2N100JABVGD1N

    Untitled

    Abstract: No abstract text available
    Text: Æutron PRODUCT DEVICES.INC. 1177 BLUE HERON BLVD. • RIVIERA BEACH, FLORIDA 3340-4 TEL: 407 848-4311 • TLX: 51-3435 «FAX: (407) 863-5946 N-CHANNEL ENHANCEMENT MOS FE T 1000V, 2.0A , ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL UNITS Drain-source Volt.(l)


    OCR Scan
    PDF SDF2N100 di/dt-100A/nS

    Untitled

    Abstract: No abstract text available
    Text: Æ lltron PRODUCT DEVICES.INC. 1177 BLUE HERON BLVD.• RIVIERA BEACH, FLORIDA 33404 TEL : 407 848-4311 • TLX: 51-3435 «FAX: (407) 863-594G N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 1000V, SYMBOL UNITS Drain-source Vo It.(1) Drai n-Gate Vo 1tage


    OCR Scan
    PDF 863-594G

    benq

    Abstract: SDF2N100
    Text: JfaMtxon PRODUCT DEVICES.INC. CÂTÂI ' N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER „ SYMBOL Drain-source Volt. l Drain-Gate Voltage 1000 Vdc 1000 Vdc ±20 Vdc 2 Ade 8 75 A W 0.6 W/°C -55 TO +150 1.7 300 "C/W VDSS VDGR (RfiS-l.OMn) (1)


    OCR Scan
    PDF SDF2N100 MIL-S-19500 benq