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    S72 MOSFET Search Results

    S72 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    S72 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    s72 sot 23

    Abstract: transistor marking s72 2N7019 2N7002 MARKING s72 2N7002 S72 SOT-23 s72 SOT23 Transistor s72 sot23 2n7002 transistor s72 S72 Transistor
    Text: N & P CHANNEL MOSFETS ENHANCEMENT MODE N CHANNEL SOT-23 Cont. D-S Drain Voltage Current Type Marking V max A max BS870 S70 60 0.25 2N7002 S72 60 0.25 *: Pulse test width 80µs, 1% duty factor. Pwr. Dispn. TC=25˚C W max 0.31 0.31 Gate Thr. Volt. VGS=VDS ID=ImA


    Original     		PDF BS870 2N7002 OT-23 BS850 22N7002 BS170 s72 sot 23 transistor marking s72 2N7019 2N7002 MARKING s72 2N7002 S72 SOT-23 s72 SOT23 Transistor s72 sot23 transistor s72 S72 Transistor

    s72 sot 23

    Abstract: S72 marking marking code S72 SOT23 sot-23 marking S72 s72 sot23 mosfet s72 s72 mosfet transistor marking s72 LT2N7002 Marking Code S72
    Text: LT2N7002 N-Channel 60V Power MOSFET GENERAL DESCRIPTION FEATURES The LT2N7002 is the N-Channel enhancement mode field effect ● 60V / 0.50A , RDS ON = 5.0Ω@VGS=10V ● 60V / 0.30A , RDS(ON)= 5.5Ω@VGS=4.5V ● Super high density cell design for extremely


    Original     		PDF LT2N7002 LT2N7002 300mA OT-23 s72 sot 23 S72 marking marking code S72 SOT23 sot-23 marking S72 s72 sot23 mosfet s72 s72 mosfet transistor marking s72 Marking Code S72

    mosfet s72

    Abstract: No abstract text available
    Text: 2N7002 60V N-Channel Enhancement Mode MOSFET 0.120 3.04 0.110(2.80) • • 0.103(2.60) • 0.056(1.40) 0.047(1.20) • 0.086(2.20) • RDS(ON), VGS@10V,IDS@500mA=5Ω • RDS(ON), [email protected],IDS@75mA=7.5Ω 0.006(0.15)MIN. FEATURES 0.079(2.00) 0.008(0.20) 0.070(1.80)


    Original     		PDF 2N7002 500mA OT-23 MIL-STD-750 0084grams 2010-REV mosfet s72

    Marking Code S72

    Abstract: s72 sot 23 s72 mosfet 2N7002 S72 SOT-23
    Text: 2N7002 N-Channel Enhancement-Mode MOSFET VDS 60V RDS ON 3.0Ω ID 230mA TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) G 0.037 (0.95) 0.037 (0.95) Pin Configuration .007 (0.175) .005 (0.125) max. .004 (0.1)


    Original     		PDF 2N7002 230mA O-236AB OT-23) OT-23 E8/10K 30K/box 500mA 200mA 200mA, Marking Code S72 s72 sot 23 s72 mosfet 2N7002 S72 SOT-23

    k72 sot-23

    Abstract: sot-23 Marking KN 72k SOT23 k72 r4 UM6K1 SI2302 SI2303
    Text: TM Micro Commercial Components MOSFETS MCC Part Number Power Rating DrainSource Voltage Gate Threshold Voltage Drain Current Static DrainSource On Resistance PD VDS VGS ID rDS on (mW) V V mA Ω Polarity Marking Code Package Type Internal Diagram SMALL SIGNAL MOSFETS


    Original     		PDF 2N7002DW OT-363 2N7002T 2SK3019 OT-523 2N7002KW 2N7002W 2SK3018 O-251 k72 sot-23 sot-23 Marking KN 72k SOT23 k72 r4 UM6K1 SI2302 SI2303

    Marking Code S72

    Abstract: No abstract text available
    Text: 2N7002W N-CHANNEL ENHANCEMENT MODE MOSFET SOT- 323 This device is an N-Channel enhancement-mode MOSFET in the industrystandard, small surface mount SOT-323 SC-70 package. This device is ideal for portable applications where board space is at a premium. 3


    Original     		PDF 2N7002W OT-323 SC-70) OT-323 2N7002W T/R13 Marking Code S72

    Marking Code S72

    Abstract: mosfet 2n7002 S72 marking DIODE 30V transistor marking s72 2N7002 MARKING s72 2N7002 MARKING transistor s72 2N7002 code s72
    Text: 2N7002 N-Channel Enhancement-Mode MOSFET Voltage Range 60 Volts Current 230 mAmpere TO-236AB SOT-23 Features a a a a a a a 0.020(0.51) 0.015(0.37) Advanced trench process technology High density cell design for ultra-low on-resistance High input impedance


    Original     		PDF 2N7002 O-236AB OT-23) OT-23 45NCE 500mA Marking Code S72 mosfet 2n7002 S72 marking DIODE 30V transistor marking s72 2N7002 MARKING s72 2N7002 MARKING transistor s72 2N7002 code s72

    2N7002 marking code 72

    Abstract: Marking Code S72 2N7002 MARKING s72 s72 mosfet S72 2n7002 2N7002 marking code 72 J
    Text: 2N7002 N-Channel Enhancement-Mode MOSFET VDS 60V RDS ON 3.0Ω ID 230mA TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) .016 (0.4) 0.035 (0.9) Pin Configuration 0.037 (0.95) 0.037 (0.95) .045 (1.15) .037 (0.95) .007 (0.175)


    Original     		PDF 2N7002 230mA O-236AB OT-23) OT-23 E8/10K 30K/box 30K/box 2N7002 marking code 72 Marking Code S72 2N7002 MARKING s72 s72 mosfet S72 2n7002 2N7002 marking code 72 J

    S72 FET

    Abstract: 2N7002 marking code 72 J Marking Code S72 S72 marking MOSFET dynamic S72 2n7002 s72 mosfet 2N7002 marking code 72 2N7002 mosfet s72
    Text: 2N7002 N-Channel Enhancement-Mode MOSFET VDS 60V RDS ON 3.0Ω ID 230mA H C N TREENFET G TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) Pin Configuration .016 (0.4) 0.037 (0.95) 0.037 (0.95) .045 (1.15)


    Original     		PDF 2N7002 230mA O-236AB OT-23) OT-23 S72 FET 2N7002 marking code 72 J Marking Code S72 S72 marking MOSFET dynamic S72 2n7002 s72 mosfet 2N7002 marking code 72 2N7002 mosfet s72

    S72 2n7002

    Abstract: 2N7002 PANJIT 2N7002 2N7002 MARKING s72 s72 sot 23
    Text: 2N7002 60V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@500mA=5Ω • RDS(ON), [email protected],IDS@75mA=7.5Ω 3 • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Battery Operated Systems, Solid-State Relays


    Original     		PDF 2N7002 500mA 2002/95/EC OT-23 MIL-STD-750 S72 2n7002 2N7002 PANJIT 2N7002 2N7002 MARKING s72 s72 sot 23

    Untitled

    Abstract: No abstract text available
    Text: 2N7002 60V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), [email protected],IDS@75mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Battery Operated Systems, Solid-State Relays


    Original     		PDF 2N7002 500mA 2002/95/EC OT-23 MIL-STD-750

    S72 2n7002

    Abstract: No abstract text available
    Text: 2N7002 60V N-Channel Enhancement Mode MOSFET 0.120 3.04 0.110(2.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. 0.103(2.60) • Specially Designed for Battery Operated Systems, Solid-State Relays


    Original     		PDF 2N7002 500mA OT-23 MIL-STD-750 2010-REV S72 2n7002

    Untitled

    Abstract: No abstract text available
    Text: 2N7002 60V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@500mA=5Ω • RDS(ON), [email protected],IDS@75mA=7.5Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Battery Operated Systems, Solid-State Relays


    Original     		PDF 2N7002 500mA 2002/95/EC OT-23 MIL-STD-750 60-Drain

    Untitled

    Abstract: No abstract text available
    Text: 2N7002 60V N-Channel Enhancement Mode MOSFET 0.120 3.04 0.110(2.80) • Advanced Trench Process Technology • Specially Designed for Battery Operated Systems, Solid-State Relays 0.103(2.60) • High Density Cell Design For Ultra Low On-Resistance 0.056(1.40)


    Original     		PDF 2N7002 2002/95/EC 500mA OT-23 MIL-STD-750 0084grams 2010-REV OT-23

    Untitled

    Abstract: No abstract text available
    Text: 2N7002 60V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), [email protected],IDS@75mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Battery Operated Systems, Solid-State Relays


    Original     		PDF 2N7002 500mA OT-23 MIL-STD-750 60ce-Drain

    s72 mosfet

    Abstract: 2N7002 MARKING s72
    Text: MCC TM Micro Commercial Components Features   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# x Case Material: Molded Plastic. Classification Rating 94V-0 • • • • • Advanced Trench Process Technology


    Original     		PDF 2N7002 7002/S72 s72 mosfet 2N7002 MARKING s72

    S72 2n7002

    Abstract: 2N7002 MARKING transistor marking s72 2N7002 transistor s72 2N7002 MARKING s72 s72 sot 23 s72 mosfet
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N7002 Features x Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1


    Original     		PDF 2N7002 7002/S72 S72 2n7002 2N7002 MARKING transistor marking s72 2N7002 transistor s72 2N7002 MARKING s72 s72 sot 23 s72 mosfet

    s72 mosfet

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components Features   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# x Case Material: Molded Plastic. Classification Rating 94V-0 • • • • • Advanced Trench Process Technology


    Original     		PDF 2N7002 7002/S72 s72 mosfet

    Untitled

    Abstract: No abstract text available
    Text: 2N7002 60V N-Channel Enhancement Mode MOSFET 0.120 3.04 0.110(2.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. 0.103(2.60) • Specially Designed for Battery Operated Systems, Solid-State Relays


    Original     		PDF 2N7002 2011/65/EU 500mA IEC61249 OT-23 2010-REV

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N7002 Features • • • • • • • • Halogen free available upon request by adding suffix "-HF"


    Original     		PDF 2N7002 7002/S72

    S72 2n7002

    Abstract: 2N7002 MARKING s72 S72 marking
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N7002 Features • • • • • • • Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1


    Original     		PDF 2N7002 7002/S72 25OCcustomers S72 2n7002 2N7002 MARKING s72 S72 marking

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N7002 Features • • • • • • • Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1


    Original     		PDF 2N7002 7002/S72

    Untitled

    Abstract: No abstract text available
    Text: 2N7002 60V N-Channel Enhancement Mode MOSFET • RDS ON , VGS@10V,IDS@500mA=5 0.006(0.15)MIN. FEATURES 0.120(3.04) 0.110(2.80) • RDS(ON), [email protected],IDS@75mA=7.5 • Advanced Trench Process Technology 0.056(1.40) • High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF 2N7002 500mA 2011/65/EU IEC61249 2013-REV

    mosfet s72

    Abstract: s72 sot 23 N mosfet sot-23 marking ND Marking Code S72 marking code S72 SOT23
    Text: _2N7002 c p : G e n e r a l v S e m ic o n d u c t o r N-Channel Enhancement-Mode MOSFET % Vds 6 0 V RdS ON) 3 .0 Q Id 2 3 0 m A TO-236AB (SOT-23) .122 .110 m. 0.031 (0.8) JL .016 (0.4) H h Top V ie w -[p - 0.035(0.9) 0.079 (2.0) Pin Configuration


    OCR Scan     		PDF 2N7002 O-236AB OT-23) OT-23 OT-23, S0T-23-6L mosfet s72 s72 sot 23 N mosfet sot-23 marking ND Marking Code S72 marking code S72 SOT23