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    LT2N7002 Price and Stock

    World Products Inc LT2N7002E

    LT2N7002E
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical LT2N7002E 3,000 3,000
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    • 10000 $0.0473
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    Onlinecomponents.com LT2N7002E 4,510
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    • 10000 $0.0364
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    NAC LT2N7002E 3,000
    • 1 $0.07
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    • 100 $0.07
    • 1000 $0.041
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    Master Electronics LT2N7002E 4,510
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    World Products Inc LT2N7002

    Trans Voltage Suppressor Diode, 3000W, 9VV(RWM), Unidirectional, 1 Element, Silicon, DO-214AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    NAC LT2N7002 3,000
    • 1 $0.04
    • 10 $0.04
    • 100 $0.04
    • 1000 $0.025
    • 10000 $0.025
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    LT2N7002 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Marking Code k72

    Abstract: k72 diode K72 marking diode K72 MARKING SOT-23
    Text: LT2N7002E N-Channel Power MOSFET – ESD GENERAL DESCRIPTION FEATURES The LT2N7002E is the N-Channel logic enhancement mode power ● Simple Drive Requirement field effect transistors are produced using high cell density, DMOS ● Small Package Outline trench technology. This high density process is especially tailored to


    Original     		PDF LT2N7002E LT2N7002E 200mA 200mA, OT-23 Marking Code k72 k72 diode K72 marking diode K72 MARKING SOT-23

    s72 sot 23

    Abstract: S72 marking marking code S72 SOT23 sot-23 marking S72 s72 sot23 mosfet s72 s72 mosfet transistor marking s72 LT2N7002 Marking Code S72
    Text: LT2N7002 N-Channel 60V Power MOSFET GENERAL DESCRIPTION FEATURES The LT2N7002 is the N-Channel enhancement mode field effect ● 60V / 0.50A , RDS ON = 5.0Ω@VGS=10V ● 60V / 0.30A , RDS(ON)= 5.5Ω@VGS=4.5V ● Super high density cell design for extremely


    Original     		PDF LT2N7002 LT2N7002 300mA OT-23 s72 sot 23 S72 marking marking code S72 SOT23 sot-23 marking S72 s72 sot23 mosfet s72 s72 mosfet transistor marking s72 Marking Code S72

    Untitled

    Abstract: No abstract text available
    Text: LT2N7002 N-Channel 60V Power MOSFET GENERAL DESCRIPTION FEATURES The LT2N7002 is the N-Channel enhancement mode field effect ● 60V / 0.50A , RDS ON = 5.0Ω@VGS=10V ● 60V / 0.30A , RDS(ON)= 5.5Ω@VGS=4.5V ● Super high density cell design for extremely


    Original     		PDF LT2N7002 LT2N7002 300mA OT-23

    LT2N7002

    Abstract: marking 702 sot23 code 702 marking code 702 SOT23
    Text: LT2N7002 N-Channel 60V Power MOSFET GENERAL DESCRIPTION FEATURES The LT2N7002 is the N-Channel enhancement mode field effect ● 60V / 0.50A , RDS ON = 5.0Ω@VGS=10V ● 60V / 0.30A , RDS(ON)= 5.5Ω@VGS=4.5V ● Super high density cell design for extremely


    Original     		PDF LT2N7002 LT2N7002 300mA marking 702 sot23 code 702 marking code 702 SOT23

    mosfet k72

    Abstract: Marking Code k72 k72 diode LT2N7002E k72 sot 23 code k72 N-channel Power MOSFET
    Text: LT2N7002E N-Channel Power MOSFET – ESD GENERAL DESCRIPTION FEATURES The LT2N7002E is the N-Channel logic enhancement mode power ● Simple Drive Requirement field effect transistors are produced using high cell density, DMOS ● Small Package Outline trench technology. This high density process is especially tailored to


    Original     		PDF LT2N7002E LT2N7002E mosfet k72 Marking Code k72 k72 diode k72 sot 23 code k72 N-channel Power MOSFET

    LT2N7002

    Abstract: power mosfet sot-23 marking 702 sot23
    Text: LT2N7002 N-Channel 60V Power MOSFET GENERAL DESCRIPTION FEATURES The LT2N7002 is the N-Channel enhancement mode field effect ● 60V / 0.50A , RDS ON = 5.0Ω@VGS=10V ● 60V / 0.30A , RDS(ON)= 5.5Ω@VGS=4.5V ● Super high density cell design for extremely


    Original     		PDF LT2N7002 LT2N7002 300mA 500mA OT-23 power mosfet sot-23 marking 702 sot23

    Marking Code k72

    Abstract: code k72 k72 diode K72 marking diode LT2N7002D
    Text: LT2N7002D N-Channel Power MOSFET – ESD GENERAL DESCRIPTION FEATURES The LT2N7002D is the N-Channel logic enhancement mode power ● Simple Drive Requirement field effect transistors are produced using high cell density , DMOS ● Small Package Outline trench technology. This high density process is especially tailored to


    Original     		PDF LT2N7002D LT2N7002D 200mA 200mA, OT-23 Marking Code k72 code k72 k72 diode K72 marking diode

    LT2N7002E

    Abstract: code k72 k72 diode mosfet k72 LT2N7002
    Text: LT2N7002E N-Channel Power MOSFET – ESD GENERAL DESCRIPTION FEATURES The LT2N7002E is the N-Channel logic enhancement mode power ● Simple Drive Requirement field effect transistors are produced using high cell density , DMOS ● Small Package Outline trench technology. This high density process is especially tailored to


    Original     		PDF LT2N7002E LT2N7002E 200mA, OT-23 code k72 k72 diode mosfet k72 LT2N7002

    LSP5522L

    Abstract: No abstract text available
    Text: LITELITE-ON SEMICONDUCTOR CORP. ON LITE DISCRETE DIVISION TVS SMAJ7.0A/ 9A SMAJ12A/ 15A SMAJ24A Schottky ESD B340A/ B360B B160/ B240A B2100A 1N5819WL FB340LM Bridge HD06 Switching BAT54A/C/S,WS 1N4148W/ WS LS4148W/WS BAV99W 2010 L15ESDL5V0NA-4 HDMI L30ESDL5V0C6-4 USB2.0


    Original     		PDF SMAJ12A/ SMAJ24A B340A/ B360B B240A B2100A 1N5819WL FB340LM BAT54A/C/S 1N4148W/ LSP5522L