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    Panasonic Electronic Components ERA-8AEB203V

    RES SMD 20K OHM 0.1% 1/4W 1206
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ERA-8AEB203V Reel 40,000 5,000
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    • 10000 $0.10262
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    Master Electronics ERA-8AEB203V 9,000
    • 1 -
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    • 10000 $0.0995
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    Panasonic Electronic Components ERA-8AEB1402V

    RES SMD 14K OHM 0.1% 1/4W 1206
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ERA-8AEB1402V Cut Tape 17,719 1
    • 1 $0.39
    • 10 $0.278
    • 100 $0.1934
    • 1000 $0.12911
    • 10000 $0.12911
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    ERA-8AEB1402V Digi-Reel 17,719 1
    • 1 $0.39
    • 10 $0.278
    • 100 $0.1934
    • 1000 $0.12911
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    ERA-8AEB1402V Reel 15,000 5,000
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    Master Electronics ERA-8AEB1402V
    • 1 -
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    Panasonic Electronic Components ERA-8AEB1240V

    RES SMD 124 OHM 0.1% 1/4W 1206
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    DigiKey ERA-8AEB1240V Digi-Reel 14,832 1
    • 1 $0.39
    • 10 $0.278
    • 100 $0.1934
    • 1000 $0.12911
    • 10000 $0.12911
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    ERA-8AEB1240V Cut Tape 14,832 1
    • 1 $0.39
    • 10 $0.278
    • 100 $0.1934
    • 1000 $0.12911
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    ERA-8AEB1240V Reel 10,000 5,000
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    Master Electronics ERA-8AEB1240V
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    New Advantage Corporation ERA-8AEB1240V 10,000 1
    • 1 -
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    • 10000 $0.1071
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    Panasonic Electronic Components ERA-8AEB122V

    RES SMD 1.2K OHM 0.1% 1/4W 1206
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ERA-8AEB122V Cut Tape 11,935 1
    • 1 $0.39
    • 10 $0.278
    • 100 $0.1934
    • 1000 $0.12911
    • 10000 $0.12911
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    ERA-8AEB122V Digi-Reel 11,935 1
    • 1 $0.39
    • 10 $0.278
    • 100 $0.1934
    • 1000 $0.12911
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    ERA-8AEB122V Reel 10,000 5,000
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    Master Electronics ERA-8AEB122V 10,000
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    • 10000 $0.1028
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    New Advantage Corporation ERA-8AEB122V 10,000 1
    • 1 -
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    • 10000 $0.1472
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    Panasonic Electronic Components ERA-8AEB2050V

    RES SMD 205 OHM 0.1% 1/4W 1206
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ERA-8AEB2050V Cut Tape 6,258 1
    • 1 $0.39
    • 10 $0.278
    • 100 $0.1934
    • 1000 $0.12911
    • 10000 $0.12911
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    ERA-8AEB2050V Reel 5,000 5,000
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    • 10000 $0.10262
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    Master Electronics ERA-8AEB2050V
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    RA8A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EMP7128

    Abstract: ra8b M5237L nec 157c TLR124 UPD424260-70 ra5b max232 application CC112 CTLD8
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF

    CDC2509

    Abstract: ra5b pc133 sdram PC133R-333-542-b2 PC133 registered reference design AVC BA0 pc133 SDRAM DIMM PC133R-333-542 PC133R-333-542 VOLTAGE pc100 gerber
    Text: PC133 SDRAM Registered DIMM Design Specification Revision 1.0 May 1999 Prepared By IBM and Reliance Computer Corporation PC133 SDRAM Registered DIMM Design Specification Table of Contents 1. Product Description . 4


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    PDF PC133 CDC2509 ra5b pc133 sdram PC133R-333-542-b2 PC133 registered reference design AVC BA0 pc133 SDRAM DIMM PC133R-333-542 PC133R-333-542 VOLTAGE pc100 gerber

    JEDEC SPD No.21

    Abstract: RA11b 227A capacitor ra5b TSOP 66 Package TNETD jesd 21c PC266 64mx8 SSTV16857
    Text: JEDEC Standard No. 21–C Page 4.20.4–1 4.20.4– 184 PIN, PC1600/2100 DDR SDRAM REGISTERED DIMM DESIGN SPECIFICATION PC1600/2100 DDR SDRAM Registered DIMM Design Specification Revision 1.2 Release 11a Revision 1.2 JEDEC Standard No. 21–C Page 4.20.4–2


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    PDF PC1600/2100 JEDEC SPD No.21 RA11b 227A capacitor ra5b TSOP 66 Package TNETD jesd 21c PC266 64mx8 SSTV16857

    SO DIMM 100 Pin Connector Pinout

    Abstract: CDC2510A SO DIMM DRAM 144 Pin Connector Pinout PC100-322-620 sdram pcb layout guide PC100-322-620R PC intel MOTHERBOARD CIRCUIT diagram intel 810 MOTHERBOARD pcb CIRCUIT diagram
    Text: PC SDRAM Registered DIMM Specification PC SDRAM Registered DIMM Specification REVISION 1.0 February, 1998 The information in this document is subject to change. Feb 98 1 of 50 Revision 1.0 PC SDRAM Registered DIMM Specification THIS SPECIFICATION IS PROVIDED "AS IS" WITH NO WARRANTIES


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    PDF 30KHz 50KHz 100MHz 200ps SO DIMM 100 Pin Connector Pinout CDC2510A SO DIMM DRAM 144 Pin Connector Pinout PC100-322-620 sdram pcb layout guide PC100-322-620R PC intel MOTHERBOARD CIRCUIT diagram intel 810 MOTHERBOARD pcb CIRCUIT diagram

    NC-87

    Abstract: SADQ32 IC603 IC1102 alviso-GM K1NA68E00096 Q1102 m306kafcl RTL8101L ICS954218BG
    Text: CF-T4 Schematic Diagram Main 1 DOTHAN HOST BUS VC15 1 VCPUCORE R11 E17 E19 E21 F6 F8 GND F18 F20 C47 10u 6.3V C42 10u 6.3V C36 10u 6.3V C31 10u 6.3V C25 10u 6.3V C21 10u 6.3V C17 10u 6.3V C13 10u 6.3V C8 10u 6.3V C4 10u 6.3V F22 G5 G21 H6 H22 J5 GND J21 K22


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    PDF R1117 C1102 C1104 4700p C1106 C1108 C1113 R1120 R1121 NC-87 SADQ32 IC603 IC1102 alviso-GM K1NA68E00096 Q1102 m306kafcl RTL8101L ICS954218BG

    RA5B

    Abstract: RA11b ra8b RA8A RA10A 128MX64 PC-100 RA12B DS785
    Text: 128M x 64 Bit Registered PC-100 SDRAM DIMM Registered PC-100 SYNCHRONOUS DRAM DIMM 64A0UsSTM8G21TS 168 Pin 128Mx64 SDRAM DIMM Registered, 8k Refresh, 3.3V with SPD Pin Assignment General Description The 64A0UsSTM8G21TS is a 128Mx64 bit, 21 chip, 168 Pin DIMM module consisting of 16 Stacked


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    PDF PC-100 64A0UsSTM8G21TS 128Mx64 13tCMH DS785-1 64A0UsSTM8G21TS RA5B RA11b ra8b RA8A RA10A RA12B DS785

    CK 77- 94V-0 pinout

    Abstract: CK 66 UL 94V-0 PC MOTHERBOARD CIRCUIT diagram intel 810 SDRAM DIMM 1997 CK 66 94V-0 dimm pcb layout RA5B Buffered SDRAM DIMM RA11b PC100-322
    Text: PC SDRAM Registered DIMM Design Support Document PC SDRAM Registered DIMM Design Support Document REVISION 1.2 October 1998 The information in this document is subject to change. Oct. 98 Page 1 of 61 Revision 1.2 PC SDRAM Registered DIMM Design Support Document


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    Untitled

    Abstract: No abstract text available
    Text: RS series, micro array resistor network. Suitable for space-saving needs because of its construction of two or four 0.5ϫ1.0mm resistance elements integrated in one chip. Its 0.5mm electrode-to-electrode spacing is identical to that of general-purpose IC.


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    PDF 65typ 63mW/element 250ppm/ 50ppm 4C1632 64mW/element 25ppm 000pcs/reel 8C1640 8A1632

    RA5B

    Abstract: DIMM 1998 SN74ALVC162334 SN74ALVC162835 SN74ALVC162836 SN74ALVC16334 SN74ALVC16835 RA2A equivalent
    Text: Logic Solutions for PC100 SDRAM Registered DIMMs SMOA001A May 1998 1 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest


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    PDF PC100 SMOA001A 6-146A SN74ALVC16334 16-Bit SCES128B, SN74ALVC162334 SCES127B, SN74ALVC16835 RA5B DIMM 1998 SN74ALVC162835 SN74ALVC162836 RA2A equivalent

    ra2b

    Abstract: No abstract text available
    Text: TOSHIBA THMY7264E0LEG-75,-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7264E0LEG is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM704FT DRAMs and PLL/Registers on a printed circuit board.


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    PDF 864-WORD 72-BIT THMY7264E0LEG-75 THMY7264E0LEG TC59SM704FT 72-bit THMY7264E0LEG) ra2b

    D018

    Abstract: D019 D032 D051 THMY7264G0LEG-75 RA1B
    Text: TOSHIBA THMY7264G0LEG-75,-80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7264G0LEG is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM704FT DRAMs and PLL/Registers on a printed circuit board.


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    PDF THMY7264G0LEG-75 864-WORD 72-BIT THMY7264G0LEG TC59SM704FT 72-bit D018 D019 D032 D051 RA1B

    d1835

    Abstract: RA11b RA5B Toshiba RA8B D018 D019 D032 D051 RA1A
    Text: TOSHIBA THMY1GE0SC70,75,80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 134,217,728-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY1GE0SC is a 134,217,728-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM804CFT DRAMs and PLL/Registers on a printed circuit board.


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    PDF GE0SC70 728-WORD 72-BIT TC59SM804CFT 72-bit 111LLU111 d1835 RA11b RA5B Toshiba RA8B D018 D019 D032 D051 RA1A

    RA5B

    Abstract: D018 D019 D032 D051 THMY1GE2SB70
    Text: TO SH IBA THMY1GE2SB70,75,80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 134,217,728-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY1GE2SB is a 134,217,728-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM824BFT DRAMs Top , 18 TC59SM804BFT DRAMs (Bottom) and PLL/Registers on a printed


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    PDF THMY1GE2SB70 728-WORD 72-BIT TC59SM824BFT TC59SM804BFT 72-bit AuHMY1GE2SB70 RA5B D018 D019 D032 D051

    RA11b

    Abstract: RA5B D018 D019 D032 ra2b ra8b
    Text: TOSHIBA THMY51E0SA70,75,80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E0SA is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM704AFT DRAMs and PLL/Registers on a printed circuit board.


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    PDF THMY51 E0SA70 864-WORD 72-BIT THMY51E0SA TC59SM704AFT 72-bit RA11b RA5B D018 D019 D032 ra2b ra8b

    30h80

    Abstract: No abstract text available
    Text: TO SH IBA THMY1GE2SB70,75,80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 134,217,728-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY1GE2SB is a 134,217,728-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM804BFT DRAMs and PLL/Registers on a printed circuit board.


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    PDF THMY1GE2SB70 728-word 72-bit TC59SM804BFT 72-bit 30h80

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA THMY7264G0LEG-75,-80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7264G0LEG is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM704FT DRAMs and PLL/Registers on a printed circuit board.


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    PDF THMY7264G0LEG-75 THMY7264G0LEG 864-word 72-bit TC59SM704FT 72-bit THMY7264G0LEG)

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA THMY51E2SA70,75,80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E2SA is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM704AFT DRAMs and PLL/Registers on a printed circuit board.


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    PDF THMY51E2SA70 THMY51E2SA 864-word 72-bit TC59SM704AFT 72-bit THMY51E2SA)

    RA5B

    Abstract: RA11b d044 D018 D019 D032 D033 D051 THMY1GE0SB70
    Text: TOSHIBA THMY1GE0SB70,75,80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 134,217,728-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY1GE0SB is a 134,217,728-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM804BFT DRAMs and PLL/Registers on a printed circuit board.


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    PDF THMY1GE0SB70 728-WORD 72-BIT TC59SM804BFT 72-bit RA5B RA11b d044 D018 D019 D032 D033 D051

    Untitled

    Abstract: No abstract text available
    Text: Lattice GAL18V10 High Performance E2CMOS PLD Generic Array Logic F U N C T IO N A L B L O C K D IA G R A M FEA TU RES >HIGH PERFORMANCE E2CMOS* TECHNOLOGY — 15 ns Maximum Propagation Delay — Fmax = 62.5 MHz — 10ns Maximum from Clock Input to Data Output


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    PDF GAL18V10 100ms) 22V10 AL18V10

    RA11b

    Abstract: RA2B RA5B D018 d1835 D019 D032 D051 THMY7264E0LEG-75 RA8A
    Text: TOSHIBA THMY7264E0LEG-75,-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7264E0LEG is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM704FT DRAMs and PLL/Registers on a printed circuit board.


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    PDF THMY7264E0LEG-75 864-WORD 72-BIT THMY7264E0LEG TC59SM704FT 168-pin PC133 RA11b RA2B RA5B D018 d1835 D019 D032 D051 RA8A

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA THMY51E0SA70,75,80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E0SA is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM704AFT DRAMs and PLL/Registers on a printed circuit board.


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    PDF 864-WORD 72-BIT THMY51E0SA70 THMY51E0SA TC59SM704AFT 72-bit THMY51EOSA)

    ra8b

    Abstract: RA-2 RA1A D018 D019 D032 D033 D051 THMY1GE0SB70 RA12A
    Text: TOSHIBA THMY1GE0SB70,75,80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 134,217,728-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY1GE0SB is a 134,217,728-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM804BFT DRAMs and PLL/Registers on a printed circuit board.


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    PDF THMY1GE0SB70 728-WORD 72-BIT TC59SM804BFT 72-bit ra8b RA-2 RA1A D018 D019 D032 D033 D051 RA12A

    km41256 dram

    Abstract: KM-41256 km41256 KM41256A-10 KM41257A TRCD D
    Text: NMOS DRAM KM41256A/KM41257A 2 56 K x 1 Bit Dynamic RAM with Page/Nibble Mode DESCRIPTION FEATURES • Performance range KM41256/7A-10 taac tcAC •rc 100ns 50ns 200ns KM41256/7A-12 120ns 60ns 230ns KM41256/7A-15 150ns 75ns 260ns Page Mode capability-KM41256A


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    PDF KM41256A/KM41257A 256Kx KM41256/7A-10 100ns 200ns KM41256/7A-12 120ns 230ns KM41256/7A-15 150ns km41256 dram KM-41256 km41256 KM41256A-10 KM41257A TRCD D

    RA5B

    Abstract: d1835 RA11b ra8b D018 D019 D032 D033 D051 THMY1GE0SB70
    Text: TOSHIBA THMY1GE0SB70,75,80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 134,217,728-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY1GE0SB is a 134,217,728-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM804BFT DRAMs and PLL/Registers on a printed circuit board.


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    PDF THMY1GE0SB70 728-WORD 72-BIT TC59SM804BFT 72-bit RA5B d1835 RA11b ra8b D018 D019 D032 D033 D051