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    UMW NTD4805NT4G

    MOSFET N-CH 30V 12.7A/95A DPAK
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    DigiKey NTD4805NT4G Digi-Reel 2,500 1
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    NTD4805NT4G Cut Tape 2,500 1
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    NTD4805NT4G Reel 2,500 2,500
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    UMW NTD4858NT4G

    MOSFET N-CH 25V 11.2A/73A DPAK
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    DigiKey NTD4858NT4G Reel 2,500 2,500
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    NTD4858NT4G Cut Tape 2,500 1
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    NTD4858NT4G Digi-Reel 2,500 1
    • 1 $0.84
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    UMW NTD4860NT4G

    MOSFET N-CH 25V 10.4A/65A DPAK
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    DigiKey NTD4860NT4G Cut Tape 2,500 1
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    NTD4860NT4G Digi-Reel 2,500 1
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    NTD4860NT4G Reel 2,500 2,500
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    onsemi NTD4858N-35G

    MOSFET N-CH 25V 11.2A/73A IPAK
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    DigiKey NTD4858N-35G Tube 715 1
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    Flip Electronics NTD4858N-35G 354
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    onsemi NTD4808NT4G

    MOSFET N-CH 30V 10A/63A DPAK
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    Rochester Electronics NTD4808NT4G 22,486 1
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    Find more NTD4 price and stock on Findchips.com

    NTD4 Datasheets (200)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTD40 Electronic Devices HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS Original PDF
    NTD405 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    NTD405 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    NTD406 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    NTD406 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    NTD407 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    NTD408 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    NTD409 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    NTD40N03R On Semiconductor Power MOSFET 40 A, 25 V Original PDF
    NTD40N03R On Semiconductor Power MOSFET 45 A, 25 V, N-Channel DPAK; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Rail; Qty per Container: 75 Original PDF
    NTD40N03R On Semiconductor Power MOSFET 45 Amps / 25 Volts / N-Channel DPAK Original PDF
    NTD40N03R-001 On Semiconductor Power MOSFET 45 A, 25 V, N-Channel DPAK Original PDF
    NTD40N03R-1 On Semiconductor Power MOSFET 40 A, 25 V Original PDF
    NTD40N03R-1 On Semiconductor Power MOSFET 45 Amps, 25 Volts Original PDF
    NTD40N03R-1G On Semiconductor Power MOSFET 45 A 25 V N-Channel DPAK Pb-Free; Package: DPAK-3 (SINGLE GAUGE); No of Pins: 4; Container: Rail; Qty per Container: 75 Original PDF
    NTD40N03R-1G On Semiconductor Power MOSFET 45 Amps, 25 Volts Original PDF
    NTD40N03RG On Semiconductor Power MOSFET 45 A 25 V N-Channel DPAK Pb-Free; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Rail; Qty per Container: 75 Original PDF
    NTD40N03RG On Semiconductor Power MOSFET 45 Amps, 25 Volts Original PDF
    NTD40N03RT4 On Semiconductor Power MOSFET 40 A, 25 V Original PDF
    NTD40N03RT4 On Semiconductor Power MOSFET 45 Amps, 25 Volts Original PDF
    ...

    NTD4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    13nhg

    Abstract: 48 13nhg mosfet 48 13nhg 4813nhg 4813NH 13nhg mosfet 369D NTD4813NH NTD4813NHT4G
    Text: NTD4813NH Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices


    Original     		PDF NTD4813NH NTD4813NH/D 13nhg 48 13nhg mosfet 48 13nhg 4813nhg 4813NH 13nhg mosfet 369D NTD4813NH NTD4813NHT4G

    04NG

    Abstract: 48 04NG 4804NG 369D
    Text: NTD4804NA Advance Information Power MOSFET 25 V, 117 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices


    Original     		PDF NTD4804NA NTD4804NA/D 04NG 48 04NG 4804NG 369D

    369D

    Abstract: NTD4857N NTD4857N-1G NTD4857N-35G NTD4857NT4G 369AC
    Text: NTD4857N Power MOSFET 25 V, 78 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4857N NTD4857N/D 369D NTD4857N NTD4857N-1G NTD4857N-35G NTD4857NT4G 369AC

    mosfet on 09ng

    Abstract: 09NG 369D NTD4909NT4G 369ad 4909ng
    Text: NTD4909N Power MOSFET 30 V, 41 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com V(BR)DSS


    Original     		PDF NTD4909N NTD4909N/D mosfet on 09ng 09NG 369D NTD4909NT4G 369ad 4909ng

    mosfet 63ng

    Abstract: MOSFET 48 63ng 49 63ng NTD4863N
    Text: NTD4863N Power MOSFET 25 V, 49 A, Single N−Channel, DPAK/IPAK Features • • • • • Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices


    Original     		PDF NTD4863N NTD4863N/D mosfet 63ng MOSFET 48 63ng 49 63ng NTD4863N

    Untitled

    Abstract: No abstract text available
    Text: NTD4806N, NVD4806N Power MOSFET 30 V, 76 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4806N


    Original     		PDF NTD4806N, NVD4806N NTD4806N/D

    60NG

    Abstract: 4860ng 4860N NTD4860N Power MOSFET 369D NTD4860N
    Text: NTD4860N Power MOSFET 25 V, 65 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4860N NTD4860N/D 60NG 4860ng 4860N NTD4860N Power MOSFET 369D NTD4860N

    48 08NG

    Abstract: 4808ng 369D NTD4808N 08NG
    Text: NTD4808N Power MOSFET 30 V, 63 A, Single N-Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4808N NTD4808N/D 48 08NG 4808ng 369D NTD4808N 08NG

    369D

    Abstract: NTD4970N NTD4970NT4G 70ng
    Text: NTD4970N Advance Information Power MOSFET 30 V, 36 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility


    Original     		PDF NTD4970N NTD4970N/D 369D NTD4970N NTD4970NT4G 70ng

    369D

    Abstract: NTD4815NH NTD4815NHT4G 15nhg
    Text: NTD4815NH Power MOSFET 30 V, 35 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4815NH NTD4815NH/D 369D NTD4815NH NTD4815NHT4G 15nhg

    4959N

    Abstract: NTD4959N
    Text: NTD4959N Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com V(BR)DSS


    Original     		PDF NTD4959N NTD4959N/D 4959N

    NTD4959N

    Abstract: No abstract text available
    Text: NTD4959NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4959NH NTD4959NH/D NTD4959N

    48 13ng mosfet

    Abstract: 369C 369D NTD4813N NTD4813NT4G TF 241
    Text: NTD4813N Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4813N NTD4813N/D 48 13ng mosfet 369C 369D NTD4813N NTD4813NT4G TF 241

    04NG

    Abstract: 48 04NG 369D NTD4804N NTD4804NT4G 4804NG WA117
    Text: NTD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4804N NTD4804N/D 04NG 48 04NG 369D NTD4804N NTD4804NT4G 4804NG WA117

    56NG mosfet

    Abstract: 48 56NG 56NG 4856N 4856ng 369D
    Text: NTD4856N Power MOSFET 25 V, 89 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices


    Original     		PDF NTD4856N NTD4856N/D 56NG mosfet 48 56NG 56NG 4856N 4856ng 369D

    55NG

    Abstract: 4855ng 4855n NTD4855NT4G NTD4855N-1G NTD4855N-35G 369D
    Text: NTD4855N Power MOSFET 25 V, 98 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices


    Original     		PDF NTD4855N NTD4855N/D 55NG 4855ng 4855n NTD4855NT4G NTD4855N-1G NTD4855N-35G 369D

    48 04NG

    Abstract: 04NG 4804NG 4804N NTD4804NT4G DASF0034379 369D NTD4804N NTD4804N-1G
    Text: NTD4804N Power MOSFET 30 V, 117 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4804N NTD4804N/D 48 04NG 04NG 4804NG 4804N NTD4804NT4G DASF0034379 369D NTD4804N NTD4804N-1G

    4805ng

    Abstract: 369D NTD4805N
    Text: NTD4805N Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4805N NTD4805N/D 4805ng 369D NTD4805N

    48 06ng

    Abstract: 4806NG 06ng 49 06ng mosfet 06ng 48 06ng mosfet 4806n NTD4806N 369ad NTD4806NT4G
    Text: NTD4806N Power MOSFET 30 V, 76 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4806N NTD4806N/D 48 06ng 4806NG 06ng 49 06ng mosfet 06ng 48 06ng mosfet 4806n NTD4806N 369ad NTD4806NT4G

    Untitled

    Abstract: No abstract text available
    Text: NTD4815N Power MOSFET 30 V, 35 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4815N NTD4815N/D

    Untitled

    Abstract: No abstract text available
    Text: NTD4809NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4809NH NTD4809NH/D

    4810NG

    Abstract: No abstract text available
    Text: NTD4810N Power MOSFET 30 V, 54 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com V(BR)DSS


    Original     		PDF NTD4810N NTD4810N/D 4810NG

    4404N

    Abstract: NTD4404N ntd4404n1 NTD44
    Text: NTD4404N Power MOSFET 85 Amps, 24 Volts N−Channel DPAK Features http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge 85 AMPERES, 24 VOLTS RDS(on) = 4.23 mW (Min)


    Original     		PDF NTD4404N NTD4404N/D 4404N ntd4404n1 NTD44

    48 13ng mosfet

    Abstract: NTD4813N
    Text: NTD4813N Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4813N NTD4813N/D 48 13ng mosfet