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    4855N Search Results

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    4855N Price and Stock

    Apex Tool Group LLC T0058744855N

    HEATING ELEMENT WP 80
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    DigiKey T0058744855N Bulk 11 1
    • 1 $102
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    Mouser Electronics T0058744855N 6
    • 1 $102
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    RS T0058744855N Bulk 1
    • 1 $103.02
    • 10 $91.69
    • 100 $91.69
    • 1000 $91.69
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    Rochester Electronics LLC NTD4855N-1G

    MOSFET N-CH 25V 14A/98A IPAK
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    DigiKey NTD4855N-1G Tube 987
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    onsemi NTD4855NT4G

    MOSFET N-CH 25V 14A/98A DPAK
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    DigiKey NTD4855NT4G Reel
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    Rochester Electronics NTD4855NT4G 209,901 1
    • 1 $0.3142
    • 10 $0.3142
    • 100 $0.2953
    • 1000 $0.2671
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    Rochester Electronics LLC NTD4855NT4G

    MOSFET N-CH 25V 14A/98A DPAK
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    DigiKey NTD4855NT4G Bulk 919
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    Rochester Electronics LLC NTD4855NT4H

    N-CHANNEL POWER MOSFET
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    DigiKey NTD4855NT4H Bulk 919
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    Find more 4855N price and stock on Findchips.com

    4855N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    55NG

    Abstract: 4855ng 4855n NTD4855NT4G NTD4855N-1G NTD4855N-35G 369D
    Text: 4855N Power MOSFET 25 V, 98 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices


    Original     		PDF NTD4855N NTD4855N/D 55NG 4855ng 4855n NTD4855NT4G NTD4855N-1G NTD4855N-35G 369D

    55NG

    Abstract: 4855n 369D NTD4855N-1G NTD4855NT4G NTD4855NT4H
    Text: 4855N Power MOSFET 25 V, 98 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4855N NTD4855N/D 55NG 4855n 369D NTD4855N-1G NTD4855NT4G NTD4855NT4H

    Untitled

    Abstract: No abstract text available
    Text: 4855N Power MOSFET 25 V, 98 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4855N NTD4855N/D

    Untitled

    Abstract: No abstract text available
    Text: 4855N Power MOSFET 25 V, 98 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices


    Original     		PDF NTD4855N NTD4855N/D