Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    NPN TRANSISTOR VCEO 80V 100V Search Results

    NPN TRANSISTOR VCEO 80V 100V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTOR VCEO 80V 100V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NTE56

    Abstract: No abstract text available
    Text: NTE56 Silicon NPN Transistor High Gain Switch and Pass Regulator Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V


    Original     		PDF NTE56 NTE56

    datasheet ic 331

    Abstract: 331 transistor NPN/transistor C 331 NTE56
    Text: NTE56 Silicon NPN Transistor High Gain Switch and Pass Regulator Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V


    Original     		PDF NTE56 datasheet ic 331 331 transistor NPN/transistor C 331 NTE56

    2sd1733

    Abstract: No abstract text available
    Text: 2SD1898 / 2SD1733 Datasheet NPN 1.0A 80V Middle Power Transistor lOutline Parameter Value VCEO IC 80V 1.0A MPT3 Collector CPT3 Base Collector Emitter lFeatures 1 Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1260 / 2SB1181 3) Low VCE sat)


    Original     		PDF 2SD1898 2SD1733 2SB1260 2SB1181 500mA/20mA) 2SD1898 SC-62) OT-89> SC-63) 2sd1733

    NPN Transistor VCEO 80V 100V

    Abstract: 2SD1733 NPN Transistor VCEO 80V 100V hfe 100
    Text: Transistors SMD Type Power Transistor 2SD1733 TO-252 Features 6.50 +0.2 5.30-0.2 High VCEO, VCEO=80V . +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 High IC, IC=1A DC . NPN silicon transistor +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15


    Original     		PDF 2SD1733 O-252 500mA -50mA, 100MHz NPN Transistor VCEO 80V 100V 2SD1733 NPN Transistor VCEO 80V 100V hfe 100

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification 2SD1733 TO-252 Features 6.50 +0.2 5.30-0.2 High VCEO, VCEO=80V . +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 High IC, IC=1A DC . NPN silicon transistor +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15


    Original     		PDF 2SD1733 O-252 500mA -50mA, 100MHz

    NPN Transistor VCEO 80V 100V

    Abstract: 2N4239 LE17
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N4239 • VCBO=100V Min , VCEO=80V(Min) • Hermetic TO-39 Metal package. • Ideally suited for General Purpose and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)


    Original     		PDF 2N4239 O-205AD) NPN Transistor VCEO 80V 100V 2N4239 LE17

    Untitled

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N4239 • VCBO=100V Min , VCEO=80V(Min) • Hermetic TO-39 Metal package. • Ideally suited for General Purpose and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)


    Original     		PDF 2N4239 34mW/Â O-205AD)

    BDT93

    Abstract: BDT95 NPN Transistor VCEO 80V 100V Audio Output Transistor Amplifier BDT91 NPN Transistor VCEO 80V 100V DC Current gain 100 ftb200
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDT91/93/95 DESCRIPTION •DC Current Gain- hFE= 20~200@ IC= 4A ·Collector-Emitter Sustaining Voltage: VCEO SUS = 60V(Min)- BDT91; 80V(Min)- BDT93; 100V(Min)- BDT95 ·Complement to Type BDT92/94/96


    Original     		PDF BDT91/93/95 BDT91; BDT93; BDT95 BDT92/94/96 BDT91 BDT93 BDT93 BDT95 NPN Transistor VCEO 80V 100V Audio Output Transistor Amplifier BDT91 NPN Transistor VCEO 80V 100V DC Current gain 100 ftb200

    2STW4466

    Abstract: 2STW1693 JESD97
    Text: 2STW4466 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = 80V ■ Complementary to 2STW1693 ■ Typical ft = 20MHz ■ Fully characterized at 150 oC Applications ■ 3 2 Audio power amplifier 1 TO-247 Description


    Original     		PDF 2STW4466 2STW1693 20MHz O-247 2STW4466 2STW1693 JESD97

    NPN Transistor VCEO 80V 100V

    Abstract: NTE22
    Text: NTE22 Silicon NPN Transistor AF PO, General Purpose Amp, Driver Features: D High Breakdown Voltage: VCEO = 80V D Large IC Capacity: IC = 1A DC D Good hFE Linearity D Low Collector Saturation Voltage Applications: D Medium Power Output Stages D High–Voltage Drivers


    Original     		PDF NTE22 NPN Transistor VCEO 80V 100V NTE22

    NTE72

    Abstract: No abstract text available
    Text: NTE72 Silicon NPN Transistor High Current Amp, Fast Switch Features: D High Power: 100W @ TC = +50°C, VCE = 40V D High Voltage: VCEO = 80V Min D High Current Saturation Voltage: VCE sat = 1.5V @ 10A D High Frequency: fT = 30MHz Min D Isolated Collector Package, No Isolating hardware Required


    Original     		PDF NTE72 30MHz 20MHz NTE72

    Untitled

    Abstract: No abstract text available
    Text: BSV64 MECHANICAL DATA Dimensions in mm inches SILICON NPN PLANAR TRANSISTOR 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) FEATURES 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. • VCBO = 100V • VCEO = 60V


    Original     		PDF BSV64 35MHz

    NPN Transistor VCEO 80V 100V

    Abstract: BSV64
    Text: BSV64 MECHANICAL DATA Dimensions in mm inches SILICON NPN PLANAR TRANSISTOR 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) FEATURES 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. • VCBO = 100V • VCEO = 60V


    Original     		PDF BSV64 35MHz NPN Transistor VCEO 80V 100V BSV64

    2N2223A

    Abstract: TO77 package
    Text: SEME 2N2223A LAB MECHANICAL DATA Dimensions in mm inches DUAL NPN TRANSISTOR IN TO77 HERMETIC PACKAGE 8.51 (0.335) 9.40 (0.370) 6.10 (0.240) 6.60 (0.260) 7.75 (0.305) 8.51 (0.335) FEATURES 12.7 (0.500) Min. 1.02 (0.040) Max. • Silicon Planar Epitaxial NPN Transistor


    Original     		PDF 2N2223A 300ms, 2N2223A-JQR-B" 2N2223A-JQR-B 5/10m 50MHz 2N2223A TO77 package

    NPN Transistor VCEO 80V 100V

    Abstract: KSE182 NPN Transistor VCEO 80V 100V hfe 100 KSE180 KSE181 80 V NPN epitaxial silicon transistor NPN Transistor VCEO 80V 100V DC Current gain 100 transistor 182 kse18
    Text: KSE180/181/182 NPN EPITAXIAL SILICON TRANSISTOR DESIGNED FOR LOW POWER AUDIO AMPLIFIER AND LOW CURRENT HIGH SPEED SWITCHING APPLICATIONS TO-126 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit 60 V : KSE181 80 V : KSE182 100 V : KSE180 40 V : KSE181


    Original     		PDF KSE180/181/182 O-126 KSE181 KSE182 KSE180 100mA 500mA NPN Transistor VCEO 80V 100V KSE182 NPN Transistor VCEO 80V 100V hfe 100 KSE180 KSE181 80 V NPN epitaxial silicon transistor NPN Transistor VCEO 80V 100V DC Current gain 100 transistor 182 kse18

    BDX67

    Abstract: npn 120v 10a transistor transistor bdx67 BDX66 NPN Transistor VCEO 80V 100V NPN Transistor VCEO 80V 100V DARLINGTON BDX67C BDX67B darlington power transistor 10a transistor bdx66
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 1000 Min @ IC= 10A ·Low Saturation Voltage ·Complement to Type BDX66/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier


    Original     		PDF BDX66/A/B/C BDX67 BDX67C BDX67A BDX67B BDX67 npn 120v 10a transistor transistor bdx67 BDX66 NPN Transistor VCEO 80V 100V NPN Transistor VCEO 80V 100V DARLINGTON BDX67C BDX67B darlington power transistor 10a transistor bdx66

    NPN Transistor VCEO 80V 100V

    Abstract: BUX77
    Text: BUX77 MECHANICAL DATA Dimensions in mm 6.35 0.250 8.64 (0.340) 3.68 (0.145) rad. max. Bipolar NPN Device VCEO = 80V 2 IC = 5A 11.94 (0.470) 12.70 (0.500) 1 0.71 (0.028) 0.86 (0.034) 3.61 (0.142) 4.08(0.161) rad. 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97)


    Original     		PDF BUX77 O213AA) NPN Transistor VCEO 80V 100V BUX77

    NPN Transistor VCEO 80V 100V

    Abstract: BUX77X
    Text: BUX77X MECHANICAL DATA Dimensions in mm 6.35 0.250 8.64 (0.340) 3.68 (0.145) rad. max. Bipolar NPN Device VCEO = 80V 2 IC = 5A 11.94 (0.470) 12.70 (0.500) 1 0.71 (0.028) 0.86 (0.034) 3.61 (0.142) 4.08(0.161) rad. 14.48 (0.570) 14.99 (0.590) 24.13 (0.95)


    Original     		PDF BUX77X O213AA) 20MHz NPN Transistor VCEO 80V 100V BUX77X

    200W TRANSISTOR AUDIO AMPLIFIER

    Abstract: TRANSISTOR BDX NPN Transistor VCEO 80V 100V DARLINGTON 200w AUDIO AMPLIFIER 200w audio amplifier ic 200w audio power amplifier transistor BDX 65 200W POWER TRANSISTORS BDX 20a 200w power amplifier
    Text: BDX69A BDX69A BDX69B BDX69C SEME LAB NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. 2. 5 20.3 max. E 30.1 1 .0 B 16.9 39.5 max. 4.2 10.9 12.8 NPN Darlington transistors for audio output stages and general amplifier and switching applications.


    Original     		PDF BDX69A BDX69B BDX69C BDX68, BDX68A, BDX68B, BDX68C. 300ms, BDX69" 200W TRANSISTOR AUDIO AMPLIFIER TRANSISTOR BDX NPN Transistor VCEO 80V 100V DARLINGTON 200w AUDIO AMPLIFIER 200w audio amplifier ic 200w audio power amplifier transistor BDX 65 200W POWER TRANSISTORS BDX 20a 200w power amplifier

    TIP31

    Abstract: TIP31C transistor tip31 NPN Transistor TO220 VCEO 80V 100V TIP31 NPN Transistor TIP31A NPN Transistor VCEO 80V 100V 3a npn to220 transistor TIP31B Silicon NPN Transistor TIP31
    Text: TIP31/TIP31A/TIP31B/TIP31C NPN Epitaxial Silicon Transistor Features • Complementary to TIP32/TIP32A/TIP32B/TIP32C 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF TIP31/TIP31A/TIP31B/TIP31C TIP32/TIP32A/TIP32B/TIP32C TIP31 TIP31A TIP31B TIP31C TIP31 TIP31C transistor tip31 NPN Transistor TO220 VCEO 80V 100V TIP31 NPN Transistor TIP31A NPN Transistor VCEO 80V 100V 3a npn to220 transistor TIP31B Silicon NPN Transistor TIP31

    pin diagram of ic 4066

    Abstract: tip131 TIP137 Darlington transistor TIP132 TIP136 TIP137 NPN Transistor TO220 VCEO 80V 100V NPN Transistor VCEO 80V 100V DARLINGTON darlington complementary
    Text: TIP131, 132, 136, 137 Darlington Transistors Features: • Collector-Emitter sustaining voltageVCEO sus = 80V (Minimum) - TIP131, TIP136 = 100V (Minimum) - TIP132, TIP137 • Collector-Emitter saturation voltage VCE(sat) = 2.0V (Maximum) at IC = 4.0A • Monolithic construction with Built-in Base-Emitter shunt resistor.


    Original     		PDF TIP131, TIP136 TIP132, TIP137 TIP131 TIP132 pin diagram of ic 4066 tip131 TIP137 Darlington transistor TIP132 TIP136 TIP137 NPN Transistor TO220 VCEO 80V 100V NPN Transistor VCEO 80V 100V DARLINGTON darlington complementary

    TIP41

    Abstract: tip41c TRANSISTOR TC 100 TIP41C EQUIVALENT NPN Transistor VCEO 80V 100V hfe 100 TRANSISTOR tip41c TIP41A TIP41B NPN Transistor TO220 VCEO 80V 100V NPN Transistor VCEO 80V 100V
    Text: TIP41/TIP41A/TIP41B/TIP41C NPN Epitaxial Silicon Transistor Features • Complementary to TIP42/TIP42A/TIP42B/TIP42C 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Emitter Voltage: TIP41


    Original     		PDF TIP41/TIP41A/TIP41B/TIP41C TIP42/TIP42A/TIP42B/TIP42C TIP41 TIP41A TIP41B TIP41C TIP41 tip41c TRANSISTOR TC 100 TIP41C EQUIVALENT NPN Transistor VCEO 80V 100V hfe 100 TRANSISTOR tip41c TIP41A TIP41B NPN Transistor TO220 VCEO 80V 100V NPN Transistor VCEO 80V 100V

    NPN Transistor TO220 VCEO 80V 100V

    Abstract: TIP29 tip29c TIP29A NPN Transistor VCEO 80V 100V tip29 npn TIP29B NPN Transistor VCEO 80V 100V DC Current gain 100 Transistor tip29 TIP-29
    Text: TIP29/TIP29A/TIP29B/TIP29C NPN Epitaxial Silicon Transistor Features • Complementary to TIP30/TIP30A/TIP30B/TIP30C 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF TIP29/TIP29A/TIP29B/TIP29C TIP30/TIP30A/TIP30B/TIP30C TIP29 TIP29A TIP29B TIP29C NPN Transistor TO220 VCEO 80V 100V TIP29 tip29c TIP29A NPN Transistor VCEO 80V 100V tip29 npn TIP29B NPN Transistor VCEO 80V 100V DC Current gain 100 Transistor tip29 TIP-29

    NPN 350W

    Abstract: powertech NPN Transistor VCEO 1000V CO111
    Text: "BIG IDEAS IN BIG POWER” PowerTech • 500 AMPERES L R -1 0 0 2 SILICON NPN TRANSISTOR ABSOLUTE MAXIMUM RATINGS LR-10Q2 SYMBOL Collector-Base Voltage VC 80 100V Collector-Emitter Voltage VCEO 80V Emitter-Base Voltage vebo 10V Peak Collector Current >CM*


    OCR Scan     		PDF LR-10Q2 -650C LPH-150 SYMBOL500 200ma NPN 350W powertech NPN Transistor VCEO 1000V CO111