BUX77A
Abstract: BUX77A-220M BUX78A BUX78A-220M LE17 5339
Text: SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTORS BUX77A-220M BUX78A-220M • High Power • Hermetic TO220 Isolated Metal Package • Ideally suited for Driver Circuits, Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS
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BUX77A-220M
BUX78A-220M
BUX77A
BUX78A
-100V
BUX77A-220M
O220M
O-257AB)
BUX77A
BUX78A
BUX78A-220M
LE17
5339
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to66
Abstract: TO66 package BUX77
Text: BUX77 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a
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BUX77
O213AA)
1-Aug-02
to66
TO66 package
BUX77
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BUX77
Abstract: st marking code BUX77HR
Text: BUX77ESY BUX77HR Hi-Rel NPN bipolar transistor 80 V - 5 A Features BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range -65°C to +200°C 2 • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL
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BUX77ESY
BUX77HR
O-257
BUX77HR
O-257
BUX77
st marking code
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BUX77ASMD
Abstract: No abstract text available
Text: BUX77ASMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar NPN Device in a Hermetically sealed
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BUX77ASMD
O276AB)
15-Aug-02
BUX77ASMD
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tcase
Abstract: No abstract text available
Text: BUX77A BUX78A Bipolar NPN / PNP Devices in a Hermetically Sealed TO66 Metal Package MECHANICAL DATA Dimensions in mm • Hermetic Metal Package 3.61 0.142 4.08(0.161) rad. 11.94 (0.470) 12.70 (0.500) 2 • Screening Options Available 0.71 (0.028) 0.86 (0.034)
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BUX77A
BUX78A
O213AA
tcase
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BUX77A
Abstract: BUX78A LE17 7743
Text: SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTORS BUX77A / BUX78A • High Power • Hermetic TO-66 Metal Package • Ideally suited for Driver Circuits, Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated
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BUX77A
BUX78A
BUX77A
-100V
O-213AA)
BUX78A
LE17
7743
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BUX77
Abstract: LE17
Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR BUX77 • High Power • Hermetic TO-66 Metal Package • Ideally suited for Driver Circuits, Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated
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BUX77
O-213AA)
BUX77
LE17
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NPN Transistor TO220 VCEO 80V 100V
Abstract: Silicon PNP Epitaxial Planar Transistor to220 NPN Transistor VCEO 80V 100V BUX77A BUX78A
Text: BUX77A–220M BUX78A–220M MECHANICAL DATA Dimensions in mm 10.6 0.42 4.6 (0.18) 3.70 Dia. Nom FEATURES 10.6 (0.42) 1.5(0.53) 16.5 (0.65) 0.8 (0.03) NPN AND PNP SILICON PLANAR EPITAXIAL TRANSISTORS • Hermetic TO220 Isolated Metal Package • Screening Options Available
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BUX77A
BUX78A
O220M
O-257AB
BUX77A
NPN Transistor TO220 VCEO 80V 100V
Silicon PNP Epitaxial Planar Transistor to220
NPN Transistor VCEO 80V 100V
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NPN Transistor VCEO 80V 100V
Abstract: BUX77
Text: BUX77 MECHANICAL DATA Dimensions in mm 6.35 0.250 8.64 (0.340) 3.68 (0.145) rad. max. Bipolar NPN Device VCEO = 80V 2 IC = 5A 11.94 (0.470) 12.70 (0.500) 1 0.71 (0.028) 0.86 (0.034) 3.61 (0.142) 4.08(0.161) rad. 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97)
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BUX77
O213AA)
NPN Transistor VCEO 80V 100V
BUX77
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BUX77A
Abstract: No abstract text available
Text: BUX77A Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a
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BUX77A
O213AA)
1-Aug-02
BUX77A
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Untitled
Abstract: No abstract text available
Text: SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTORS BUX77A-220M BUX78A-220M • High Power • Hermetic TO220 Isolated Metal Package • Ideally suited for Driver Circuits, Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS
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BUX77A-220M
BUX78A-220M
BUX77A
BUX78A
-100V
BUX77A-220M
O220M
O-257AB)
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Untitled
Abstract: No abstract text available
Text: SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTORS BUX77A / BUX78A • High Power • Hermetic TO-66 Metal Package • Ideally suited for Driver Circuits, Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated
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BUX77A
BUX78A
BUX77A
-100V
O-213AA)
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BUX77
Abstract: No abstract text available
Text: BUX77 MECHANICAL DATA Dimensions in mm 6.35 0.250 8.64 (0.340) 3.68 (0.145) rad. max. Bipolar NPN Device VCEO = 80V 2 IC = 5A 11.94 (0.470) 12.70 (0.500) 1 0.71 (0.028) 0.86 (0.034) 3.61 (0.142) 4.08(0.161) rad. 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97)
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BUX77
O213AA)
BUX77
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BUX77SMD
Abstract: No abstract text available
Text: BUX77SMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar NPN Device in a Hermetically sealed
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BUX77SMD
O276AB)
15-Aug-02
BUX77SMD
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Untitled
Abstract: No abstract text available
Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR BUX77 • High Power • Hermetic TO-66 Metal Package • Ideally suited for Driver Circuits, Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated
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BUX77
O-213AA)
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NPN Transistor VCEO 80V 100V
Abstract: BUX77X
Text: BUX77X MECHANICAL DATA Dimensions in mm 6.35 0.250 8.64 (0.340) 3.68 (0.145) rad. max. Bipolar NPN Device VCEO = 80V 2 IC = 5A 11.94 (0.470) 12.70 (0.500) 1 0.71 (0.028) 0.86 (0.034) 3.61 (0.142) 4.08(0.161) rad. 14.48 (0.570) 14.99 (0.590) 24.13 (0.95)
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BUX77X
O213AA)
20MHz
NPN Transistor VCEO 80V 100V
BUX77X
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Untitled
Abstract: No abstract text available
Text: BUX77 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a
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BUX77
O213AA)
30-Jul-02
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tcase
Abstract: No abstract text available
Text: BUX77A–220M BUX78A–220M MECHANICAL DATA Dimensions in mm NPN AND PNP SILICON PLANAR EPITAXIAL TRANSISTORS 10.6 0.42 4.6 (0.18) 3.70 Dia. Nom FEATURES 10.6 (0.42) 1.5(0.53) 16.5 (0.65) 0.8 (0.03) • Hermetic TO220 Isolated Metal Package • Screening Options Available
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BUX77A
BUX78A
O220M
O-257AB
tcase
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k2645
Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt
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MK135
MK136
MK137
MK138
MK139
MK140
Mk142
MK145
MK155
157kr
k2645
k4005
U664B
mosfet k4005
MB8719
transistor mosfet k4004
SN16880N
stk5392
STR451
BC417
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Untitled
Abstract: No abstract text available
Text: CRIMSON SE MICO ND UC TO R INC TT D eTJI e SIMD^ b 0DQ0337 4 • . 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC 99 D 00 3 3 7 ! D ' ' f ' 3 3 - 0/ ! EPITAXIAL PLANAR - TO -66 NPN PNP BUR10 BUR11 BUR12 BUX77 2N4910 2N4911 2N4912 2 N5427 2N5428
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0DQ0337
BUR10
BUR11
BUR12
BUX77
2N4910
2N4911
2N4912
N5427
2N5428
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Bux81
Abstract: BUY12 NPN/8D140 NPN/SML1258
Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o BUX60 BUX61 BUX62 BUX63 BUX64 BUX65 BUX66 BUX67 BUX67A BUX67C BUX69 BUX70 BUX77 BUX77 CECC BUX77-SM BUX77A BUX77A-220M BUX78 BUX78 CECC BUX78-SM BUX78A BUX78A-220M BUX78A-SM BUX78-SM BUX80 BUX81
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BUX60
BUX61
BUX62
BUX63
BUX64
BUX65
BUX66
BUX67
BUX67A
BUX67C
Bux81
BUY12
NPN/8D140
NPN/SML1258
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Untitled
Abstract: No abstract text available
Text: EPITA XIA L PLANAR - TO-66 PNP BUR10 BUR11 BUR12 BUX77 2N4910 2N4911 21-14912 2N5427 2N5428 2N5429 2NI5430 BUX78 2N4898 2N4899 2N4900 lc Vco V V cio (V) (A) P« (W) 100 300 200 100 40 60 80 80 80 100 100 80 200 120 80 40 60 80 80 80 100 100 5 20 10 5 4 4
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BUR10
BUR11
BUR12
BUX77
2N4910
2N4911
2N5427
2N5428
2N5429
2NI5430
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2n5430
Abstract: 411 00337 BDY57 BU912 TO-59 Package BOY90 BUR21 2N4898 2N4899 2N4900
Text: CRIMSON SEMICONDUCTOR INC Ti DE | E S m D T b 2514096 CRIMSON SEMICONDUCTOR INC 99D 00337 D ' " T “ 33-0/ EPITA XIA L PLANAR - TO-66 NPN PN P BUR10 * BUR11 * BUR12 BUX77 2N4910 2N4911 2N4912 2 N5427 2N5428 2N5429 2N5430 BUX78 2N4898 2N4899 2N4900 «CM V
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BUR10
BUR11
BUR12
BUX77
BUX78
2N4910
2N4898
2N4911
2N4899
2N4912
2n5430
411 00337
BDY57
BU912
TO-59 Package
BOY90
BUR21
2N4900
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TDA0161 equivalent
Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:
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