2N3767
Abstract: LE17
Text: SILICON NPN TRANSISTOR 2N3767 • Low Saturation Voltage • High Gain Characteristics • Hermetic TO66 Metal Package • High Reliability Screening Options Available • Switching and Medium Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated
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2N3767
143mW/
300us,
O-213AA)
2N3767
LE17
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2N5629
Abstract: No abstract text available
Text: Search Results Part number search for devices beginning "2N5430" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N5430 NPN TO66 100V 7A 60 240 2/2 30MHz
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2N5430"
2N5430
2N5430X
30MHz
2N5581"
2N5581
2N5581-JQR-B
250MHz
2N5629
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Untitled
Abstract: No abstract text available
Text: POSITIVE ADJUSTABLE VOLTAGE REGULATOR IP117R IP117AR IP117HVR IP117AHVR / / / / LM117R LM117AR LM117HVR LM117AHVR FEATURES • • • • • APPLICATIONS 1.5A Output Current Guaranteed Internal Thermal Overload Protection Output Short Circuit Protected Hermetic Metal TO66 Package
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IP117R
IP117AR
IP117HVR
IP117AHVR
LM117R
LM117AR
LM117HVR
LM117AHVR
O-213AA)
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Untitled
Abstract: No abstract text available
Text: SILICON NPN BIPOLAR TRANSISTOR BUX62 • Hermetic TO66 Metal Package • Designed For Driver Circuits, Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCEO IC PD TJ Tstg Collector - Emitter Voltage
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BUX62
O-213AA)
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Untitled
Abstract: No abstract text available
Text: NEGATIVE ADJUSTABLE VOLTAGE REGULATOR IP137R IP137AR IP137HVR IP137AHVR / / / / LM137R LM137AR LM137HVR LM137AHVR FEATURES • • • • • APPLICATIONS 1.5A Output Current Guaranteed Internal Thermal Overload Protection Output Short Circuit Protected Hermetic Metal TO66 Package
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IP137R
IP137AR
IP137HVR
IP137AHVR
LM137R
LM137AR
LM137HVR
LM137AHVR
O-213AA)
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NTE369
Abstract: Transistor 800V
Text: NTE369 Silicon NPN Transistor TV Vertical Deflection, Switch Description: The NTE369 is an NPN transistor in a TO66 type case designed for high voltage inverters, converters, regulators, and switching circuits. Features: D High Voltage: VCBO = 800V D Gain Specified to 200mA
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NTE369
NTE369
200mA
200mA,
500mA,
100mA,
Transistor 800V
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NTE124
Abstract: 325V
Text: NTE124 Silicon NPN Transistor High Voltage Power Output Description: The NTE124 is a general purpose transistor in a TO66 type package designed for high speed switching, linear amplifier applications, high voltage operational amplifiers, switching regulators, converters,
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NTE124
NTE124
100mA
10MHz
250mA,
100mA,
10MHz,
100kHz
325V
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NTE131MP
Abstract: NTE155 NTE131 germanium transistors NPN Germanium power
Text: NTE131 PNP & NTE155 (NPN) Germanium Complementary Transistors Audio Power Amplifier Description: The NTE131 (PNP) and NTE155 (NPN) are Germanium PNP Alloy Junction transistors in a Japanese TO66 type package designed for use in audio power amplifier applications.
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NTE131
NTE155
100mA
NTE131MP
NTE155
NTE131
germanium transistors NPN
Germanium power
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NTE404
Abstract: No abstract text available
Text: NTE404 Hardware Heat Sink for TO66 Type Package Includes Base and Top Piece Description: The NTE404 is a 2-piece heat sink designed for circuit board mounting. Specifications: Finish . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Black Anodize
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NTE404
NTE404
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Untitled
Abstract: No abstract text available
Text: 2N4910X 2N4911X 2N4912X MECHANICAL DATA Dimensions in mm inches NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. FEATURES 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034)
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2N4910X
2N4911X
2N4912X
O-213AA)
500mA
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Untitled
Abstract: No abstract text available
Text: SILICON NPN TRANSISTOR 2N3767 • Low Saturation Voltage • High Gain Characteristics • Hermetic TO66 Metal Package • High Reliability Screening Options Available • Switching and Medium Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated
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2N3767
143mW/Â
300us,
O-213AA)
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tcase
Abstract: No abstract text available
Text: BUX77A BUX78A Bipolar NPN / PNP Devices in a Hermetically Sealed TO66 Metal Package MECHANICAL DATA Dimensions in mm • Hermetic Metal Package 3.61 0.142 4.08(0.161) rad. 11.94 (0.470) 12.70 (0.500) 2 • Screening Options Available 0.71 (0.028) 0.86 (0.034)
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BUX77A
BUX78A
O213AA
tcase
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lm137 datasheet
Abstract: IP137AHVR IP137AR IP137HVR IP137R LE17 LM137AHVR LM137AR LM137HVR LM137R
Text: NEGATIVE ADJUSTABLE VOLTAGE REGULATOR IP137R IP137AR IP137HVR IP137AHVR / / / / LM137R LM137AR LM137HVR LM137AHVR FEATURES • • • • • APPLICATIONS 1.5A Output Current Guaranteed Internal Thermal Overload Protection Output Short Circuit Protected Hermetic Metal TO66 Package
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IP137R
IP137AR
IP137HVR
IP137AHVR
LM137R
LM137AR
LM137HVR
LM137AHVR
O-213AA)
lm137 datasheet
IP137AHVR
IP137AR
IP137HVR
IP137R
LE17
LM137AHVR
LM137AR
LM137HVR
LM137R
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pnp 500v
Abstract: vbe 10v, vce 500v NPN Transistor NTE175 NTE38
Text: NTE38 PNP & NTE175 (NPN) Silicon Complementary Transistors High Voltage, Medium Power Switch TO66 Type Package Description: The NTE38 (PNP) and NTE175 (NPN) are complementary silicon transistors in a TO66 type package designed for high−speed switching and linear amplifier applications for high−voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers.
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NTE38
NTE175
NTE38:
200mA
NTE175:
NTE38
875mA
pnp 500v
vbe 10v, vce 500v NPN Transistor
NTE175
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IC 8823
Abstract: No abstract text available
Text: SILICON NPN TRANSISTOR 2N6235R • Hermetic TO66 Metal Package • Designed For Driver Circuits, Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO IC IB PD TJ Tstg
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2N6235R
O-213AA)
IC 8823
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Untitled
Abstract: No abstract text available
Text: Search Results Part number search for devices beginning "BUX61" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD BUX61 NPN TO66 200V 8A 20 60 4/3 8MHz 70W
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BUX61"
BUX61
BUX62"
BUX62
BUY81
60MHz
BUY82"
BUY82
BUY82CECC
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Untitled
Abstract: No abstract text available
Text: Search Results Part number search for devices beginning "2N6298" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N6298 PNP TO66 60V 8A 750 18000 3/4 4MHz
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2N6298"
2N6298
2N6298-JQR-B
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TO276AA
Abstract: 2n4910
Text: Search Results Part number search for devices beginning "2N4910" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N4910 NPN TO66 40V 4A 20 100 1/0.5 3MHz
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2N4910"
2N4910
2N4910X
2N4910X-JQR-B
2N4910XSMD
2N4910XSMD05
2N4910XSMD05-JQR-B
2N4910XSMD-JQR-B
O276AB)
O276AA)
TO276AA
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W3406T
Abstract: W3406
Text: Iss: 1 WINSLOW ADAPTICs W3406 TO66P Transistor Socket W3406 TO66P 5A Part Numbers W3406T-Tin Filled Phenolic Resin Also available from Winslow Adaptics are cost effective, time saving solutions to test, obsolescence, supply problems and upgrades. OEMs can upgrade equipment with custom Adaptics utilising additional logic, often saving considerable cost and time on re-design. If lead-time becomes an issue contact us for a suitable package converter. We specialise in conversion of all package lead-frames. For
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W3406
W3406T-Tin
W3406T
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LM117R
Abstract: IP117 IP117AHVR IP117AR IP117HVR IP117R LE17 LM117 LM117AHVR LM117AR
Text: POSITIVE ADJUSTABLE VOLTAGE REGULATOR IP117R IP117AR IP117HVR IP117AHVR / / / / LM117R LM117AR LM117HVR LM117AHVR FEATURES • • • • • APPLICATIONS 1.5A Output Current Guaranteed Internal Thermal Overload Protection Output Short Circuit Protected Hermetic Metal TO66 Package
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IP117R
IP117AR
IP117HVR
IP117AHVR
LM117R
LM117AR
LM117HVR
LM117AHVR
O-213AA)
LM117R
IP117
IP117AHVR
IP117AR
IP117HVR
IP117R
LE17
LM117
LM117AHVR
LM117AR
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TRANSFORMER 220v to 9V
Abstract: 220v 2a diode bridge NTE384 220v 20v 4a
Text: NTE384 Silicon NPN Transistor High Voltage Power Amp/Switch Description: The NTE384 is a multiple epitaxial silicon NPN power transistor in a TO66 type package utilizing a multiple–emitter site structure. Multiple–epitaxial construction maximizes the volt–ampere characteristic of the device and provides fast switching speeds. Multiple–emitter design ensures uniform current flow throughout the structure, which produces a high IS/b and a large safe–operation–area.
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NTE384
NTE384
200mA,
TRANSFORMER 220v to 9V
220v 2a diode bridge
220v 20v 4a
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Untitled
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON TRANSISTOR BDX14A • Hermetic Metal TO66 Package. • Ideal for General Purpose Low Frequency Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VCER VCEX VEBO
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BDX14A
O-213AA)
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2N6127
Abstract: 2N6354 2N5007 2N6262 2N6350 2N6351 2N6352 2N6353 2N6383 2N6384
Text: - 16 u J M Ê E L E C T R O N I C S , IN C. COLLECTOR CURRENT = 10 AMPS NPN TYPES— Continued Device No 2N6262 2N6350 2N6351 2N6352 2N6353 2N6354 2N6383 2N6384 2N6385 2N6495 VcBO VCEO (sus Case Volts Volts 150 170 TO-3 80 TO-33 80 TO-33 150 150 80 80 TO66/3
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2N6262
2N6350
2N6351
2N6352
2N6353
2N6354
2N6383
2N6384
2N6385
2N6495
2N6127
2N5007
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TO61 package
Abstract: TO111 package 2N6262 2N6226 2N6353 2N5007 2N6350 2N6351 2N6352 2N6354
Text: 16 u J M Ê E L E C T R O N I C S , IN C. COLLECTOR CURRENT = 10 AMPS NPN TYPES— Continued Device No 2N6262 2N6350 2N6351 2N6352 2N6353 2N6354 2N6383 2N6384 2N6385 2N6495 VCBO VCEO sus Case Volts Volts 150 170 TO-3 80 TO-33 80 TO-33 150 150 80 80 TO66/3
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2N6262
2N6350
2N6351
2N6352
2N6353
2N6354
2N6383
2N6384
2N6385
2N6187
TO61 package
TO111 package
2N6226
2N5007
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