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    NPN TRANSISTOR 10A 100V Search Results

    NPN TRANSISTOR 10A 100V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTOR 10A 100V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Vce-200V 20a

    Abstract: 200V transistor npn 10a 300V transistor npn 2a BUV22 equivalent BUV22
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV22 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = 1.0V (Max.) @IC= 10A ·High Switching Speed ·High DC Current Gain: hFE= 20(Min.) @IC= 10A APPLICATIONS ·Designed for high current, high speed, high power


    Original     		PDF BUV22 Vce-200V 20a 200V transistor npn 10a 300V transistor npn 2a BUV22 equivalent BUV22

    transistor 2n3772

    Abstract: 2N3772
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3772 DESCRIPTION •Excellent Safe Operating Area ·High DC Current Gain-hFE=15 Min @IC = 10A ·Low Saturation Voltage: VCE(sat)= 1.4V(Max)@ IC = 10A APPLICATIONS ·Designed for linear amplifiers, series pass regulators, and


    Original     		PDF 2N3772 50kHz transistor 2n3772 2N3772

    2SD1793

    Abstract: ITO-220 TP10L10
    Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1793 Case : ITO-220 TP10L10 Unit : mm 10A NPN RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage


    Original     		PDF 2SD1793 ITO-220 TP10L10) 002IC 004IC 2SD1793 ITO-220 TP10L10

    2SD1793

    Abstract: ITO-220 TP10L10
    Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1793 Case : ITO-220 TP10L10 Unit : mm 10A NPN RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage


    Original     		PDF 2SD1793 ITO-220 TP10L10) 002IC 004IC 2SD1793 ITO-220 TP10L10

    2SD1793

    Abstract: ITO-220 TP10L10
    Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1793 Case : ITO-220 TP10L10 Unit : mm 10A NPN RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage


    Original     		PDF 2SD1793 ITO-220 TP10L10) 002IC 004IC 2SD1793 ITO-220 TP10L10

    TRANSISTOR TC 100

    Abstract: BUV50 transistor TC 10 TP30S
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV50 DESCRIPTION •High Current Capability ·Low Collector Saturation Voltage: VCE sat = 0.8V (Max.) @IC= 10A ·High Switching Speed APPLICATIONS ·Designed for high current, high speed, high power


    Original     		PDF BUV50 TRANSISTOR TC 100 BUV50 transistor TC 10 TP30S

    transistor BD245

    Abstract: BD245C BD245 BD245A BD245 transistor BD245B BD246 EQUIVALENT NPN Transistor VCEO 80V 100V NPN Transistor 10A 70V
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD245/A/B/C DESCRIPTION •Collector Current -IC= 10A ·Collector-Emitter Breakdown Voltage: V BR CEO = 45V(Min)- BD245; 60V(Min)- BD245A 80V(Min)- BD245B; 100V(Min)- BD245C ·Complement to Type BD246/A/B/C


    Original     		PDF BD245/A/B/C BD245; BD245A BD245B; BD245C BD246/A/B/C BD245 BD245B transistor BD245 BD245C BD245 BD245A BD245 transistor BD245B BD246 EQUIVALENT NPN Transistor VCEO 80V 100V NPN Transistor 10A 70V

    NPN Transistor 10A 100V

    Abstract: darlington power transistor npn DARLINGTON 10A MJ11017 MJ11018 NPN transistor Ic 50A td tr ts tf npn darlington 150v 15a
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 150V (Min.) ·High DC Current Gain: hFE= 400(Min.)@IC= 10A ·Low Collector Saturation Voltage: VCE (sat)= 1.0V(Max.)@ IC= 5.0A


    Original     		PDF MJ11017 Cycle10% NPN Transistor 10A 100V darlington power transistor npn DARLINGTON 10A MJ11017 MJ11018 NPN transistor Ic 50A td tr ts tf npn darlington 150v 15a

    npn DARLINGTON 10A

    Abstract: darlington power transistor 10a darlington power transistor MJ11022
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 250V (Min.) ·High DC Current Gain: hFE= 400(Min.)@IC= 10A ·Low Collector Saturation Voltage: VCE (sat)= 1.0V(Max.)@ IC= 5.0A


    Original     		PDF

    BDX67

    Abstract: npn 120v 10a transistor transistor bdx67 BDX66 NPN Transistor VCEO 80V 100V NPN Transistor VCEO 80V 100V DARLINGTON BDX67C BDX67B darlington power transistor 10a transistor bdx66
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 1000 Min @ IC= 10A ·Low Saturation Voltage ·Complement to Type BDX66/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier


    Original     		PDF BDX66/A/B/C BDX67 BDX67C BDX67A BDX67B BDX67 npn 120v 10a transistor transistor bdx67 BDX66 NPN Transistor VCEO 80V 100V NPN Transistor VCEO 80V 100V DARLINGTON BDX67C BDX67B darlington power transistor 10a transistor bdx66

    ZXTN2011Z

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTN2011Z Green 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • • • • • BVCEO > 100V IC = 4.5A high Continuous Current ICM = 10A Peak Pulse Current


    Original     		PDF ZXTN2011Z AEC-Q101 J-STD-020 ZXTN2011Z DS33663

    Untitled

    Abstract: No abstract text available
    Text: ,O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MJH11018 Silicon NPN Darlington Power Transistor DESCRIPTION • High DC Current Gain: hFE = 400(Min)@lc=10A • Collector-Emitter Sustaining Voltage-


    Original     		PDF MJH11018 MJH11017

    Untitled

    Abstract: No abstract text available
    Text: J.£.ii£,u , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BDY76 Silicon NPN Power Transistor DESCRIPTION • Excellent Safe Operating Area • High DC Current Gain:hFE=40~120@lc = 10A


    Original     		PDF BDY76 200mA

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX618 ISSUE 2 – JULY 1995 FEATURES * 10A Peak pulse current * Excellent hFE characteristics up to10A pulsed * Extremely low saturation voltage e.g. 7mV typ. * IC cont 3.5A C B APPLICATIONS * Power MOSFET gate driver in conjunction with


    Original     		PDF ZTX618 to10A ZTX718

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ✪ ISSUE 3 - NOVEMBER 1995 0. 4 0. 3 t 0. 2 a t) -55 ° C +25 ° C +100 ° C SYMBOL VALUE UNIT Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO 100 V 0. 1 10m A 10 0m A 1A 10A 10m A 1m A V+-=10V


    Original     		PDF FMMT593 FMMT493 100ms

    BDW42

    Abstract: BDW47 147 B transistor npn DARLINGTON 10A
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 100V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 5A ·Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max.)@ IC= 5.0A


    Original     		PDF BDW47 BDW42 BDW47 147 B transistor npn DARLINGTON 10A

    npn DARLINGTON 10A

    Abstract: TIP147T NPN Darlington Transistor TIP142T darlington power transistor 10a
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= 5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 100V(Min) ·Complement to Type TIP147T APPLICATIONS


    Original     		PDF TIP147T Cycle20% npn DARLINGTON 10A TIP147T NPN Darlington Transistor TIP142T darlington power transistor 10a

    BDT93

    Abstract: BDT95 NPN Transistor VCEO 80V 100V Audio Output Transistor Amplifier BDT91 NPN Transistor VCEO 80V 100V DC Current gain 100 ftb200
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDT91/93/95 DESCRIPTION •DC Current Gain- hFE= 20~200@ IC= 4A ·Collector-Emitter Sustaining Voltage: VCEO SUS = 60V(Min)- BDT91; 80V(Min)- BDT93; 100V(Min)- BDT95 ·Complement to Type BDT92/94/96


    Original     		PDF BDT91/93/95 BDT91; BDT93; BDT95 BDT92/94/96 BDT91 BDT93 BDT93 BDT95 NPN Transistor VCEO 80V 100V Audio Output Transistor Amplifier BDT91 NPN Transistor VCEO 80V 100V DC Current gain 100 ftb200

    2N6546

    Abstract: 2N6547
    Text: DATA SHEET 2N6546 2N6547 NPN SILICON TRANSISTOR JEDEC TO-3 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6546, 2N6547 types are Silicon NPN Triple Diffused Mesa Transistors designed for high voltage, high current, high speed switching applications. MAXIMUM RATINGS TC=25°C unless otherwise noted


    Original     		PDF 2N6546 2N6547 2N6546, 2N6547 2N6546

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN3 7 2 0 2SB1388/2SD2093 2SB1388 : PNP Epitaxial Planar Silicon Transistor 2SD2093 : NPN Triple Diffused Planar Silicon Transistor 100V/10A Driver Applications Applications • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.


    OCR Scan     		PDF 2SB1388/2SD2093 2SB1388 2SD2093 00V/10A T03PML c17D7b 3720-l/4

    SILICON TRANSISTOR CORP

    Abstract: STP515 2N4114 2N4211 2n5609 transistor 2N5627 2N5678 2N5251 2n5609 stp6060
    Text: SILICON TRANSISTOR CORP 47E D • 8E54022 OOOOflll t. « S T C 2 AMP T*VS*07 5 AMP Ic CONTINUOUS NPN TYPICAL SPECIFICATIONS VCEO To 300V hFE 20-120 PACKAGE y ^ « 1A 5V r a TO-257 I PNP v c e o t o io o v VCEO To 300V VCEO To 100V h FE20-120(a1A 5 V hFE 20-120 2 .5 A 5 V


    OCR Scan     		PDF 8E54022 FE20-120 30MHz fTTo40M 50MHz 2N4863 2N5662 N5663 2N5333 SILICON TRANSISTOR CORP STP515 2N4114 2N4211 2n5609 transistor 2N5627 2N5678 2N5251 2n5609 stp6060

    12V 5A rectifier

    Abstract: No abstract text available
    Text: PH26560 Series Preliminary POWER HYBRID 15A DUAL 1/2 H-BRIDGE DRIVERS DESCRIPTION FEATURES • 15A Drive Capability • 4 Drivers with Catch Rectifiers • Fast Switching Speeds ton =35nsec @lc =5A, Vcc =30V toff =300nsec @lc =5A, Vcc =30V • 100V Breakdown on


    OCR Scan     		PDF PH26560 35nsec 300nsec PH26560 12V 5A rectifier

    2SB1231

    Abstract: 2SD1841
    Text: O rdering num ber: EN3260A SMÊYO % No 326ÖA i 2SB1231/2SD1841 2SB1231: PNP Epitaxial Planar Silicon Transistor 2SD1841: NPN Triple Diffused Planar Silicon Transistor 100V/25A Switching Applications Features • Large current capacity and wide ASO. • Low saturation voltage.


    OCR Scan     		PDF EN3260A 2SB1231/2SD1841 2SB1231: 2SD1841: 00V/25A 2SB1231 T03PB 71095TS/7190MH 2SB1231 2SD1841

    IRF9210

    Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
    Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF


    OCR Scan     		PDF 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1