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    NGB8202NT4G Search Results

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    NGB8202NT4G Price and Stock

    onsemi NGB8202NT4G

    IGBT 440V 20A 150W D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NGB8202NT4G Reel 800
    • 1 -
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    • 1000 $1.05004
    • 10000 $1.025
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    Verical NGB8202NT4G 2,957 281
    • 1 -
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    • 1000 $1.2113
    • 10000 $1.2113
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    NGB8202NT4G 2,100 281
    • 1 -
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    • 100 -
    • 1000 $1.2113
    • 10000 $1.2113
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    Rochester Electronics NGB8202NT4G 5,057 1
    • 1 $1.14
    • 10 $1.14
    • 100 $1.07
    • 1000 $0.969
    • 10000 $0.969
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    EBV Elektronik NGB8202NT4G 26 Weeks 800
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    Rochester Electronics LLC NGB8202NT4G

    IGBT 440V 20A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NGB8202NT4G Bulk 254
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.19
    • 10000 $1.19
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    NGB8202NT4G Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NGB8202NT4G On Semiconductor TRANS IGBT CHIP N-CH 440V 20A 3D2PAK T/R Original PDF
    NGB8202NT4G On Semiconductor NGB8202 - TRANSISTOR 20 A, 440 V, N-CHANNEL IGBT, LEAD FREE, CASE 418B-04, D2PAK-3, Insulated Gate BIP Transistor Original PDF

    NGB8202NT4G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GB8202NG

    Abstract: 8202NG NGB8202NT4G NGB8202N NGB8202NT4
    Text: NGB8202N Ignition IGBT 20 A, 400 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and


    Original     		PDF NGB8202N NGB8202N/D GB8202NG 8202NG NGB8202NT4G NGB8202N NGB8202NT4

    NTP2955G

    Abstract: m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G
    Text: 5V ±3% 80 mA 0.8 V — 6 mA 1 mA CS8101 5V ±2% 100 mA 0.6 V 50 mA 140 mA (100 mA) CS8151 5V ±2% 100 mA 0.6 V — 750 mA (200 mA) CS8221 5V ±2% 100 mA 0.6 V — NCV317L Adj ±4% 100 mA 1.9 V (Typ) — Overvoltage Current Limit Wakeup l Overtemperature


    Original     		PDF CS8101 CS8151 CS8221 NCV317L NCV553 SC-82 SOIC-20 SGD516/D NTP2955G m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G

    B8202NG

    Abstract: NGB8202NG B8202 NGB8202NT4G B8-202
    Text: NGB8202N Ignition IGBT 20 A, 400 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and


    Original     		PDF NGB8202N NGB8202N/D B8202NG NGB8202NG B8202 NGB8202NT4G B8-202

    NGB8202NT4G

    Abstract: NGB8202AN NGB8202ANT4G NGB8202N NGB8202A
    Text: NGB8202N, NGB8202AN Ignition IGBT 20 A, 400 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGB8202N, NGB8202AN NGB8202N/D NGB8202NT4G NGB8202AN NGB8202ANT4G NGB8202N NGB8202A

    Untitled

    Abstract: No abstract text available
    Text: NGB8202N, NGB8202AN Ignition IGBT 20 A, 400 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGB8202N, NGB8202AN NGB8202N/D

    NGB8202N

    Abstract: 75A60
    Text: NGB8202N, NGB8202AN Ignition IGBT 20 A, 400 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGB8202N, NGB8202AN NGB8202N/D NGB8202N 75A60