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UMW ISL9N306AD3ST MOSFET N-CH 30V 50A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ISL9N306AD3ST	Cut Tape	2,500		1	1 $0.69 10 $0.466 100 $0.69 1000 $0.22899 10000 $0.22899	Buy Now
	ISL9N306AD3ST	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.2047	Buy Now
	ISL9N306AD3ST	Digi-Reel	2,500		1	1 $0.69 10 $0.466 100 $0.69 1000 $0.22899 10000 $0.22899	Buy Now
Rochester Electronics LLC ISL9N306AP3 N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ISL9N306AP3	Bulk			398	1 - 10 - 100 - 1000 $0.75 10000 $0.75	Buy Now
Rochester Electronics LLC ISL9N306AD3 N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ISL9N306AD3	Bulk			317	1 - 10 - 100 - 1000 $0.95 10000 $0.95	Buy Now
Rochester Electronics LLC ISL9N306AS3ST N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ISL9N306AS3ST	Bulk			807	1 - 10 - 100 - 1000 $0.37 10000 $0.37	Buy Now
Rochester Electronics LLC ISL9N306AD3ST N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ISL9N306AD3ST	Bulk			807	1 - 10 - 100 - 1000 $0.37 10000 $0.37	Buy Now

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N306A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
N306AS Abstract: n306a ISL9N306AP3 ISL9N306AS3ST 45E-2 Text: N306AP3/N306AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching	Original	PDF	ISL9N306AP3/ISL9N306AS3ST 3400pF O-263AB O-220AB N306AS n306a ISL9N306AP3 ISL9N306AS3ST 45E-2
N306AS Abstract: N306A ISL9N306AS3ST ISL9N306AP3 Text: N306AP3/N306AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching	Original	PDF	ISL9N306AP3/ISL9N306AS3ST 3400pF O-263AB O-220AB N306AS N306A ISL9N306AS3ST ISL9N306AP3
n306ad Abstract: ISL9N306AD3ST 39e3 N-306A Text: N306AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching	Original	PDF	ISL9N306AD3ST 3400pF O-252 n306ad ISL9N306AD3ST 39e3 N-306A
n306ad Abstract: N306A ISL9N306AD3 Text: N306AD3 / N306AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V, 50A, 6mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.	Original	PDF	ISL9N306AD3 ISL9N306AD3ST 3400pF n306ad N306A
N306AD Abstract: N306A Text: N306AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching	Original	PDF	ISL9N306AD3ST 3400pF O-252 N306AD N306A
n306ad Abstract: N306A Text: PWM Optimized N306AD3ST/ N306AD3 N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 6mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.	Original	PDF	ISL9N306AD3ST/ ISL9N306AD3 3400pF O-252 O-252) O-251AA) n306ad N306A
n306ad Abstract: N306A ISL9N306AD3 ISL9N306AD3ST Text: N306AD3 / N306AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V, 50A, 6mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.	Original	PDF	ISL9N306AD3 ISL9N306AD3ST 3400pF n306ad N306A ISL9N306AD3ST
2T931A Abstract: KT853 2T926A KT838A 2T803A 2T809A 2T904A 2T808A 2T603 2T921A Text: g V ì^ fg : W SflÉptÉ! W ^ i$ î0 i0 û * W I I m ^7ù£-à.S& m p ,-À-& s i: r& mSÊmÈÈ •ï ' ^ f§ W % a s Ü lg S I W M 7 \ w Jkw s i 4; h# » ik « W 'ï illl ¡ P * te ili -X\ S I Iw 11 4-S U E S T am Ir ¿ « 1 1 1 » , ü i a Î3 & & C nPA BO H H M K	OCR Scan	PDF	MOKP51KOB, KTC631 TI2023 II2033 TT213 TI216 fI217 II302 XI306 n306A 2T931A KT853 2T926A KT838A 2T803A 2T809A 2T904A 2T808A 2T603 2T921A
u574 Abstract: IC BL 176A IF cable 8D-FB COAXIAL CABLE 5D-2V b11g 105j 250v 2DLF MQ 303A B177D B176D Text: •W CONTEf S in c e 1978 s 1 Reg. No. Q8718 ISO -9001: 2000 - BT" É ? Jk 100MHz 300MHz * 400MHz P3 ~ P4 800MHz N ANTENNA 1 1» P6 144/430MHZ P7 ~ P10 TWO BAND P11 ~ P12 MIC ECHO AMP P13 I EARPHONE MIC P13 ANTENNA B A S E TRANSCEIVER A C C ESSO R IES P15 ~ P16	OCR Scan	PDF	Q8718 ISO-9001: 100MHz 300MHz 400MHz 800MHz 144/430MHZ u574 IC BL 176A IF cable 8D-FB COAXIAL CABLE 5D-2V b11g 105j 250v 2DLF MQ 303A B177D B176D
1HT251 Abstract: 2T203 kt117 1T308 2T355A 2T312 IT308B K1HT251 kt117b 2T313 Text: WmmËÊÊm W h A iW f W * i rïS >••> ro s ît. ;<W«a 7 mm m$m 15ÎÏ3 Sktófefc?¿feS 11181 immm SI f ' ■ ' ' ' : m S ËÊB B S M M CnPABOHHMK nonynpoBQQHHKOBbiE nPHBOPbl TPAH3MCTOPbl MAflOI/ì MOLUHOCTM n O f l PEA A K L4H EPÌ A . B rO flO M E A O B A	OCR Scan	PDF	FojO33 KT357 KT358 KT361 KT363 KT364-2 KT366 KT368 KT369 KT369-1 1HT251 2T203 kt117 1T308 2T355A 2T312 IT308B K1HT251 kt117b 2T313
N317 Abstract: n334 N-338 N-P-59U N333A coaxial 5D-2V N326 N306A N327 n329a Text: -Gfo, N CONNECTORS S in c e 1 9 7 8 ORDERING INFORMATION t N-301A-B S G T INSULATION D DELRIN T TEFLON P PLASTIC PB PBT POLYESTER PH PHENOLIC CONTACT PLATING C CHROME G GOLD N NICKEL S SILVER BODY PLATING C CHROME G GOLD N NICKEL -* S SILVER BODY MATERIAL	OCR Scan	PDF	N-301A-B N-301 N-313 N-325 N-337 N-302 N-314 N-326 N-338 N-303 N317 n334 N-P-59U N333A coaxial 5D-2V N326 N306A N327 n329a
2T908A Abstract: 2T602 2T907A KT604 1HT251 1T813 2t903 KT920A PO6 115.05 KT117 Text: nojiyriPOBOflHHKOBblE nPHBOPbl: TpaH3HCTOpbI CnpaBOHHHK rioa oGmea peaaKUHen H. H. TOPIOHOBA EB MOCKBA 3HEPrOATOMH3AAT 1983 BEK 32.852 n 53 y ^ K . 621.282.3 035 P e n e H 3 e H T b i : E. 14. KpbiJioB, B. B. I1aB;ioB AB T o p b i : B. Jl. ApoHOB, A. B. E bkikob, A. A. 3aiineB,	OCR Scan	PDF	T-0574D. 30Eiaa Coi03nojiH 2T908A 2T602 2T907A KT604 1HT251 1T813 2t903 KT920A PO6 115.05 KT117
KC156A Abstract: ky202e K174XA2 KT809A KT805A KT610B KP350A KT808a KT920A KC213 Text: BJOJIABPHHEHKO CnPABOMHMK n o n o jiy nPOBOAHMKOBBIM nPMBOPAM H 3A aH ne 1 0 -e, nepepaöoT aH H oe KHEB «TEXHIKA* h flo n o jiH e H H o e 32.852 h2 J113 JlaBpnMenKO B. 10. J113 CnpaBOMHHK no noJiynpoBOAHHKOBbiM npnöopaM. 10-e m a., nepepaô. h A on.— K.: TexHiKa, 1984.— 424 c., hji.— BHÓjniorp.:	OCR Scan	PDF	XapfaKOB-57, KC156A ky202e K174XA2 KT809A KT805A KT610B KP350A KT808a KT920A KC213
KN303 Abstract: n306a APM 2510 2SF100 C12S Scans-048 apm 2510 n KF190 silicium power transistor broadcas amplifier Text: nOAEBblE TPAH3HCTOPBI FIELD-EFFECT TRANSISTORS FELDEFFEKTTRANSISTOR EN TRANSISTORS A EFFET DE CHAMP IST 2 riEPEHEHb TPAH3MCTOPOB LIST OF TRANSISTORS TRANSISTORENLISTE LISTE DE TRANSISTORS Grp. Page Knioir-KmoiE 11 Kni03E-Kni03M Kni03EP-KTI103MP 15 KriC104A-KnC104XI .	OCR Scan	PDF	KriC104A-KnC104XI KnC202A-KnC20 -Kn202E Kni03E-Kni03M Kni03EP-KTI103MP Kn201E-Kn201/l Kn301B Kn302A-Kn302r. Kn303A-Kn303H Kn304A. KN303 n306a APM 2510 2SF100 C12S Scans-048 apm 2510 n KF190 silicium power transistor broadcas amplifier