MAB-T15-D-240-10
Abstract: MAB-T15-D-120-10 MAB-T09-S-240-05 Aluminum Base LED PCB 12v bulb 220 supply diagram power supply LED 5w MAB-T09-S-012-05 MAB-T15-D-024-10 MAB-T09-S-024-05 100-220VAC
Text: MT4B/5B/8B Ø45mm / Ø56mm / Ø86mm Steady TOWER LIGHTS Incandescent or LED • • • • • • Order Information MT 4 Optional Orders B 5 A L – RYGBC 4 5 8 Lens Diameter B Light Style 1 2 3 4 5 Number of Stacks Power Supply
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12VDC
24VDC
LED-T09-S-12-(
LED-T09-S-24-(
MAB-T09-S-012-05
MAB-T09-S-024-05
MAB-T09-S-130-05
MAB-T09-S-240-05
LED-T15-D-12-(
LED-T15-D-24-(
MAB-T15-D-240-10
MAB-T15-D-120-10
Aluminum Base LED PCB
12v bulb 220 supply diagram
power supply LED 5w
MAB-T15-D-024-10
100-220VAC
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Untitled
Abstract: No abstract text available
Text: M IC R O N MT8C8024 DRAM MODULE 1MEG x 8 DRAM FAST PAGE MODE PIN ASSIGNMENT (Top View OPTIONS Vcc CÄ5 DQ1 A0 A1 DQ2 A2 A3 Vss DQ3 A4 A5 DQ4 A6 A7 DQ5 A8 A9 NC DQ6 W Vss DQ7 NC DQ8 NC raS NC NC Vcc MARKING • Tim ing 80ns access 100ns access 120ns access
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MT8C8024
100ns
120ns
30-pin
MT8C8024
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Untitled
Abstract: No abstract text available
Text: M IC R O N MT8C8025 DRAM MODULE 1MEG x 8 DRAM NIBBLE MODE FEATURES MARKING • Timing 80ns access 100ns access 120ns access • Packages: Leaded 30-pin SIP Leadless 30-pin SIMM -10 -12 MN M GENERAL DESCRIPTION The MT8C8025 is a randomly accessed solid-state
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MT8C8025
30-pin
1575mW
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Untitled
Abstract: No abstract text available
Text: M IC R O N MT8C9025 1MEG x 9 DRAM DRAM MODULE NIBBLE MODE FEATURES PIN ASSIGNMENT Top View • In d u stry sta n d ard p in-out in a 30-pin single-in-line package • H igh perform ance CM OS silicon gate process • Single 5V±10% p o w er su p p ly • All inputs, o u tp u ts a n d clocks are fully TTL a n d
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MT8C9025
30-pin
1575mW
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6H6 tube
Abstract: 6h6gt tube 6h6 6H6 diode 6h6gt tube electronic tube Tung Sol Lamp Works newark 13-2L 6h6g
Text: 6H6, 6H6GT/G TUNG-SOL m m di o d e J4 „ r MAX. MT8C Ü UN IPOTENTIAL CATHODE 6.3 VOLTS i 5 0.3 AMPERE '*1 AC OR DC 1I 8 _ 2 f M AX iiJÜF n1 HEATER MAX. _ 1 _ T-9 3 « MAX. C L A S S B U LB I R T E R H C O I ATE 7 F I R OC T AL M S E M T A l SHELL 7 P I N O C 1 H B AS E
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CH66T/G
6H6 tube
6h6gt
tube 6h6
6H6 diode
6h6gt tube
electronic tube
Tung Sol Lamp Works
newark
13-2L
6h6g
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Untitled
Abstract: No abstract text available
Text: M IC R O N MT8C36256 DRAM MODULE 256K X 36 DRAM FEATURES OPTIONS DRAM MODULE PIN ASSIGNMENT (Top View • Industry standard pin-out in a 72-pin single-in-line package • High performance CMOS silicon gate process. • Single 5V±10% power supply • All inputs, outputs and clocks are fully TTL and
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MT8C36256
72-pin
2000mW
100ns
120ns
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MT8C
Abstract: No abstract text available
Text: M I CR ON T E C H N O L O G Y INC L muii.c i biiiSMT 0002335 3 ñE D ni»B¡wywn^B^ . w t IMRN r r ~ y ¿ -2 3 -/7 1»I ' n i i - fi ; K ' -i «ü iS n U - ififi i J i a i • tr iù tfr m u lti.M ' REPLACES: MT8C9256 and MT8C9257 256K X 9 DRAM DRAM MODULE
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MT8C9256
MT8C9257)
30-pin
625mW
512-cycle
QDQ2343
WT8C9256
MT8C
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30-pin SIMM
Abstract: 256k 30-pin SIMM
Text: I^ IIC R O N MT8C9256 256K X 9 DRAM DRAM MODULE REFRESH: 512 CYCLE/8MS FEATURES PIN ASSIGNMENT Top View • Industry standard pin-out in a 30-pin single-in-line memory module • Single 5V±10% power supply • All inputs, outputs and clocks are fully TTL
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PDF
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MT8C9256
30-pin
135mW
1350mW
100ns3
30-pin SIMM
256k 30-pin SIMM
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30-pin simm memory
Abstract: No abstract text available
Text: [M IC R O N MT8C8026 1MEG x 8 DRAM DRAM MODULE STATIC COLUMN PIN ASSIGNMENT Top View OPTIONS MARKING • Timing 80ns access 100ns access 120ns access • Packages: Leaded 30 -pin SIP Leadless 30-pin SIMM -10 -12 MN M GENERAL DESCRIPTION The MT8C8026 is a randomly accessed solid-state
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MT8C8026
30-pin
1575mW
30-pin simm memory
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Untitled
Abstract: No abstract text available
Text: MICRON MT8C9024 DRAM MODULE 1MEG x 9 DRAM LOW PROFILE DRAM FEATURES OPTIONS MODULE • Industry standard pin-out in a 30-pin single-in-line package • High performance CMOS silicon gate process • Single 5V±10% power supply • All inputs, outputs and clocks are fully T I L and
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MT8C9024
30-pin
1575mW
100ns
120ns
30-pim
MT8C9024
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MT8C36512
Abstract: No abstract text available
Text: MICRON MT8C36512 DRAM MODULE 512K x 36 DRAM PIN ASSIGNMENT Top View OPTIONS 72 PIN SIMM (MO) o MARKING • Timing 80ns access 100ns access 120ns access • - 8 -10 -12 • Lead dress Tin/L ead Gold (SIMM only) None G • Packages: Leadless 72 -pin SIMM Leaded 72-pin ZIP
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MT8C36512
72-pin
2000mW
100ns
120ns
MT8C36512
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Untitled
Abstract: No abstract text available
Text: M IC R O N MT8C8256 256K X DRAM MODULE DRAM REFRESH: 512 CYCLE/8MS PIN ASSIGNMENT Top View 30 PIN SIMM (MM) Vcc CSS DQ1 A0 A1 DQ2 A2 A3 Vss DQ3 A4 A5 DQ4 A6 A7 DQ5 A8 NC NC DQ6 W Vss DQ7 PRB DQ8 NC RAS NC NC Vcc MARKING • Tim ing 80ns access 100ns access
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MT8C8256
30-pin
120mW
1200mW
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MT8C
Abstract: No abstract text available
Text: M IC R O N MT8C9026 1MEG x 9 DRAM DRAM MODULE STATIC COLUMN PIN ASSIGNMENT (Top View OPTIONS MARKING • Timing 80ns access 100ns access 120ns access • Packages: Leaded 30 -pin SIP Leadless 30-pin SIMM -10 -12 MN M GENERAL DESCRIPTION The MT8C9026 is a randomly accessed solid-state
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OCR Scan
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PDF
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MT8C9026
30-pin
1575mW
MT8C
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30 pin SIP dram memory
Abstract: No abstract text available
Text: MICRON MT8C8024 DRAM MODULE 1MEG x 8 DRAM LOW PROFILE DRAM FEATURES OPTIONS MODULE • Industry standard pin-out in a 30-pin single-in-line package • High performance CMOS silicon gate process • Single 5V±10% power supply • All inputs, outputs and clocks are fully TTL and
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OCR Scan
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PDF
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MT8C8024
30-pin
1400mW
100ns
120ns
MT8C8024
30 pin SIP dram memory
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MT5C2564
Abstract: No abstract text available
Text: jV /llC R O IM 64K SRAM M T5C2564 X 4 SRAM 64K X 4 SRAM PIN ASSIGNMENT Top View • High speed: 1 0 ,1 2 ,1 5 ,2 0 and 25 • High-perform ance, low-power, CM OS double-metal process • Single +5V ±10% power supply • Easy m emory expansion with CE option
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T5C2564
24-Pin
MT5C2564
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Untitled
Abstract: No abstract text available
Text: ADVANCE M IC R O N I 4 MEG DRAM MODULE X 32, 8 MEG X MT8D432 16 DRAM M OD ULE 4 MEG X 32, 8 MEG X 16 FEATURES PIN ASSIGNMENT Top View • Industry standard pinout in a 72-pin single-in-line package • High-performance, CM OS silicon-gate process • Single 5V ±10% power supply
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MT8D432
72-pin
048-cycle
A0-A10;
A0-A10
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a12t
Abstract: A13T
Text: j MICRO N T E C H N O L O G Y INC SSE » • b l l l S M T G G 0 S b l 3 2b0 ■ URN MT5C6405 883C 16K X 4 SRAM I^ IIC R O N MILITARY SRAM 16K x 4 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-86859 • MHrSTD-883, Class B
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MT5C6405
MHrSTD-883,
24-Pin
MIL-STD-883
a12t
A13T
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T2D 53
Abstract: T2D 70 T2D 35 "T2D" T2D 30 T2D 66 T2D 17 T2D 32 marking T2D T2D 31
Text: 7 ADVANCE M T2D T 132 B, M T4D232 B, M T8D432 B 2, 4 MEG X 32 B U R S T EDO DRAM M O D U LE S BURST EDO DRAM MODULE 1, 2, 4 MEG X 32 4 , 8 16 MEpABYT£, 5V, BURST EDO V FEATURES • 72-pin, single-in-line m emory module (SIMM) • Burst EDO order, interleave or linear, programmed by
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T4D232
T8D432
72-pin,
024-cycle
048-cycle
72-PiRON
000xB
T2D 53
T2D 70
T2D 35
"T2D"
T2D 30
T2D 66
T2D 17
T2D 32
marking T2D
T2D 31
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Untitled
Abstract: No abstract text available
Text: M I CR ON T E C H N O L O G Y INC 3 flE D G 0 0 2 3 QS 1 B M R N .-ftt'ir REPLACES: WT9C$G24 1 MEG X 8 DRAM FAST PAGE M O D E FEATURES PIN ASSIGNMENT (Top View) • Industry standard pinout in a 30-pin single-in-line package • High-performance CMOS silicon gate process
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30-pin
1400mW
512-cycle
T-46-23-17
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nec 424256
Abstract: nec 424100 511000 424256 424256 nec KM41C1000 NEC 421000 m5m44c256 S4C1024 514256
Text: SIEM EN S Cross reference Memory Components 1 Mx1 256 K SIE M E N S HYB 511000 HYB 514256 HYB 514100 TO SHIBA TC 511000 TC 514256 TC 514100 HITACHI HM 511000 HM 514256 HM 514100 NEC jiP D 421000 XPD 424256 (XPD 424100 M ITSUBISHI M5M4C1000 M5M44C256 M5M514000
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M5M4C1000
MSM511000
MB81C1000
KM41C1000
MT4C1024
S4C1024
M5M44C256
MB81C4256
KM44C256
MT4C4256
nec 424256
nec 424100
511000
424256
424256 nec
NEC 421000
514256
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U18 524
Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC 14E D • tlllSMT DOOIOMI T ■ T -V ¿ -¿ 3 - / 7 512K X 36 DRAM DRAM MODULE FEATURES 72 PIN SIMM MO MODULE OPTIONS DRAM PIN ASSIGNMENT (Top View) • Industry standard pin-out in a 72-pin single-in-line package • High performance CMOS silicon gate process.
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72-pin
2000mW
100ns
120ns
U18 524
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT8LD132 X S , MT16LD232X(S) 1 MEG, Z MEG X 32 DRAM MODULE 1 MEG, 2 MEG x 32 DRAM MODULE 4, 8 MEGABYTE, 3.3V, EDO PAGE MODE, OPTIONAL SELF REFRESH FEATURES • New proposed JED EC-standard pinout in a 72-pin single-in-line package • High-performance CM O S silicon-gate process
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MT8LD132
MT16LD232X
72-pin
800mW
024-cycle
128ms
72-Pin
G011474
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sun hold RAS 0610
Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000
Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information
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A16685-7
EMTR1147
sun hold RAS 0610
oki Logic
Motorola transistor 7144
MSC2304
M5M41000
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MT8C1008
Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC SSE D • L. 1 1 1 5 H I 000341=4 dfib « U R N V-'llCROfNJ 128K MT5C1008 X 8 SRAM 'T'-M w-'L's-m- SRAM 128K X 8 SRAM FEATURES • High speed: 12*, 15*, 17,20,25,35 and 45ns
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MT5C1008
32-Pin
GQD3M71
MT8C1008
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