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    MT42C8 Price and Stock

    Micron Technology Inc MT42C8128DJ-8

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    Bristol Electronics MT42C8128DJ-8 755
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    Quest Components MT42C8128DJ-8 604
    • 1 $16.875
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    MT42C8128DJ-8 45
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    Micron Technology Inc MT42C8256DJ-7

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    Bristol Electronics MT42C8256DJ-7 112 1
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    Quest Components MT42C8256DJ-7 89
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    MT42C8256DJ-7 10
    • 1 $28.8
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    Micron Technology Inc MT42C8257DJ-7

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    Bristol Electronics MT42C8257DJ-7 24 1
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    Quest Components MT42C8257DJ-7 19
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    Micron Technology Inc MT42C8255DJ7

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    Bristol Electronics MT42C8255DJ7 16
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    Micron Technology Inc MT42C8254DJ-7

    256K X 8 VIDEO DRAM, 70 NS, PDSO40
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    Quest Components MT42C8254DJ-7 433
    • 1 $6
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    MT42C8 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MT42C8127-10DJ Micron 128K x 8 DRAM with 256 x 8 SAM Scan PDF
    MT42C8127-12DJ Micron 128K x 8 DRAM with 256 x 8 SAM Scan PDF
    MT42C8127DJ-10 Micron 128K x 8 DRAM WITH 256 x 8 SAM Scan PDF
    MT42C8127DJ-12 Micron 128K x 8 DRAM WITH 256 x 8 SAM Scan PDF
    MT42C8255DJ-10 Micron 256K x 8 DRAM WITH 512 x 8 SAM Scan PDF
    MT42C8255DJ-7 Micron 256K x 8 DRAM WITH 512 x 8 SAM Scan PDF
    MT42C8255DJ-8 Micron 256K x 8 DRAM WITH 512 x 8 SAM Scan PDF
    MT42C8255RG-10 Micron 256K x 8 DRAM WITH 512 x 8 SAM Scan PDF
    MT42C8255RG-7 Micron 256K x 8 DRAM WITH 512 x 8 SAM Scan PDF
    MT42C8255RG-8 Micron 256K x 8 DRAM WITH 512 x 8 SAM Scan PDF
    MT42C8255TG-10 Micron 256K x 8 DRAM WITH 512 x 8 SAM Scan PDF
    MT42C8255TG-7 Micron 256K x 8 DRAM WITH 512 x 8 SAM Scan PDF
    MT42C8255TG-8 Micron 256K x 8 DRAM WITH 512 x 8 SAM Scan PDF

    MT42C8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MVM121

    Abstract: MT42C8128 Y6137 philips HD15 MT42C8256 mvp131 MT42C8 trident vga HD11 HD15
    Text: Motion JPEG Controller ORDERING INFORMATION ZR 36055 PQ C -29.5 PACKAGE PQ - Plastic Quad Flat Pack EIAJ DATA CLOCK RATE SCREENING KEY PACKAGE PART NUMBER PREFIX DATA CLOCK RATE -29.5: 29.5 MHz -21: 21 MHz SCREENING KEY C - 0°C to +70°C (VCC = 4.75V to 5.25V)


    Original
    PDF ZR36055 ZR36050 MVM121 MT42C8128 Y6137 philips HD15 MT42C8256 mvp131 MT42C8 trident vga HD11 HD15

    micron DRAM

    Abstract: No abstract text available
    Text: PRELIMINARY MT42C8255 256K X 8 VRAM MICRON 256K x 8 DRAM WITH 512 x 8 SAM VRAM FEATURES • • • • • • PIN ASSIGNMENT Top View Industry standard pinout, timing, and functions High-performance, CMOS silicon-gate process Single +5V ±10% power supply


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    PDF MT42C8255 512-cycle 300mW 40-Pin micron DRAM

    Untitled

    Abstract: No abstract text available
    Text: MT42C8254 256K X 8 VRAM [W IIC R Q N 256K X 8 DRAM WITH 512x8 SAM VRAM • Industry-standard pinout, tim ing and functions • NIBBLE 4-bit W RITE and M ASKED W RITE access cycles • High-perform ance, CM OS silicon-gate process • Single +5V ±10% power supply


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    PDF MT42C8254 512-cycle 512x8 40-Pin

    marking code AANG

    Abstract: NT77 MT4C4256 2S650
    Text: ADVANCE MT42C8255 TICittiOLOC' MC 2 MEG VRAM 256K x 8 DRAM WITH 5 1 2 x 8 SAM FEATURES • • • • • • • • • • • Industry standard pinout, timing, and functions High-performance, CMOS silicon-gate process Single +5V ±10% power supply Inputs and outputs are fully TTL compatible


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    PDF MT42C8255 512-cycle 512x8 300mW WT42CI2S6 2S650 marking code AANG NT77 MT4C4256 2S650

    MT42C8128-12

    Abstract: WCs MARKING vram dual port MT42C8128 MT42C812
    Text: MICRON TECHNOLOGY INC SSE D • 1311134=] 00DS2SS 33*1 «FIRN MT42C8128 1 2 8 K x 8 VRAM M IC R O N ■ li CHNUIOUY l.'J. VRAM 128Kx8 DRAM WITH 256 X 8 SAM FEATURES • • • • • • • PIN ASSIGNMENT Top View 40-Pin SOJ (Q-6) SPECIAL FUNCTIONS •


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    PDF 00DS2SS MT42C8128 275mW 512-cycle 128Kx8 MT42CS12B MT42C8128-12 WCs MARKING vram dual port MT42C812

    Untitled

    Abstract: No abstract text available
    Text: MICRON MT42C8127 VRAM 128Kx8 DRAM WITH 256 X 8 SAM • • • • • • • • • • • Industry standard pinout, timing and functions High performance CMOS silicon gate process Single +5V ±10% power supply Inputs and outputs are fully TTL and CMOS


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    PDF MT42C8127 512-cycle 275mW 100ns 128Kx8

    sem 2107

    Abstract: RT/IC sem 2107
    Text: MT42C8255 256K X 8 VRAM |U |IC=RO N VRAM 256K X 8 DRAM WITH 512 X 8 SAM • • • • • • • • • • • Industry-standard pinout, tim ing and functions High-perform ance, CM OS silicon-gate process Single +5V ±10% power supply Inputs and outputs are fully TTL compatible


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    PDF MT42C8255 512-cycle 300mW 40-Pin 40/44-Pin MT42C6255 sem 2107 RT/IC sem 2107

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE M IC R O N • MT42C8255 FICMNOlOC» MC 2 MEG VRAM 256K X 8 DRAM WITH 512x8 SAM FEATURES • • • • • • • • • • • Industry standard pinout, timing, and functions High-performance, CMOS silicon-gate process Single +5V ±10% power supply


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    PDF MT42C8255 512x8 512-cycle 300mW 40-Pin

    MT42C8257

    Abstract: No abstract text available
    Text: MT42C8257 256K X 8 VRAM M IC R O N FEATURES PIN ASSIGNMENT Top View • Industry-standard pinout, tim ing and functions • High-perform ance CM OS silicon-gate process • Single +5V ±10% power supply (consult factory regarding 3.3V operation) • Fully TTL and CM OS compatible inputs and TTL


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    PDF MT42C8257 512-cycle 300mW 40-Pin

    MT42C8256

    Abstract: l992 sc 8256 mt42c MT42C256
    Text: ADVANCE MT42C8256 2 56 K X 8 V R A M I^ IIC R O N VRAM 256K x 8 DRAM WITH 512 x 8 SAM FEATURES • • • • 40-Pin SOJ Q-6 Vcc SC SDQ1 S 002 SD03 SD04 ( ( ( ( t ( T R iO l D01 002 003 004 r [ [ [ [ A5 [ 18 A4 [ 19 Vcc [ 20 - 7 - 8 • Packages Plastic SOJ (400 mil)


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    PDF MT42C8256 512-cycle 300mW 40-Pin MT42CB2S6 l992 sc 8256 mt42c MT42C256

    Untitled

    Abstract: No abstract text available
    Text: MI CR ON TECHNOLOGY SSE INC D b lllS 4 * ì DDDSPtiB l b 2 • MRN PRELIMINARY MT42C8255 256K X 8 VRAM M IC R O N I TECHNOJ OCY. INC. ■ t'O VRAM 256K X 8 DRAM WITH 512x8 SAM FEATURES • • • • • • • • • • • Industry standard pinout, timing, and functions


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    PDF MT42C8255 512-cycle 300mW 512x8 40-Pin MT42C8255 WT42C8255

    mt42c8127

    Abstract: No abstract text available
    Text: SUPERSEDED BY MT42C8128 M T42C 8127 128 K X 8 V R A M |W |IC= RO N VRAM 128K X 8 DRAM WITH 256 X 8 SAM FEATURES • • • • • SPECIAL FUNCTIONS • • • • • JE D E C Stand ard F u n ctio n set P E R SIST E N T M A SK E D W R IT E S P L IT R E A D T R A N SF E R


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    PDF MT42C8128 512-cycle MT42C mt42c8127

    MT4208128

    Abstract: MT42C812 mt42c8128 Micron MT42C MT42C0128
    Text: MT42C8128 128K X 8 V R A M p ilC R O IM VRAM 128Kx8 DRAM WITH 256 X 8 SAM FEATURES • • • • • • • • • • • Industry standard pinout, timing and functions High-perform ance, CM OS silicon-gate process Single +5V ±10% power supply Low power: 15mW standby; 275m W active, typical


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    PDF MT42C8128 512-cycle 128Kx8 40-Pin MT42CBI28 MT4208128 MT42C812 Micron MT42C MT42C0128

    MT42C8128

    Abstract: MT42C8128DJ MT42C8128DJ-7
    Text: MT42C8128 128K X 8 VRAM M IC R O N VRAM 128Kx8 DRAM WITH 256 x 8 SAM • • • • • • • • • • • PIN ASSIGNMENT (Top View Industry-standard pinout, timing and functions High-performance, CMOS silicon-gate process Single +5V ±10% power supply


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    PDF MT42C8128 275mW 512-cycle 128Kx8 40-Pin MT42C8128DJ MT42C8128DJ-7

    Untitled

    Abstract: No abstract text available
    Text: MICRON TECHNOLOGY INC SSE D b i l l 5 ^ DGD5 223 Sflb • URN SUPERSEDED BY MT42C8128 MT42C8127 128K x 8 VRAM M IC R O N B TECHNOLOGY. INC. T .% -rb -i£> _ VRAM 128Kx8 DRAM WITH 256 X 8 SAM FEATURES • • • • • • • • PIN ASSIGNMENT Top View


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    PDF MT42C8128 MT42C8127 128Kx8 40-Pin 512-cycle 275mW

    42c8128

    Abstract: No abstract text available
    Text: MT42C8128 128K X 8 VRAM M IC R O N VRAM 128K X 8 DRAM WITH 256 X 8 SAM • • • • • • • • • • • PIN ASSIGNMENT (Top View Industry-standard pinout, tim ing and functions High-perform ance, CM OS silicon-gate process Single +5V ±10% power supply


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    PDF MT42C8128 512-cycle 40-Pin 42c8128

    MT42C8257

    Abstract: No abstract text available
    Text: MT42C8257 256K X 8 VRAM I^IICRON FEATURES PIN ASSIGNMENT Top View • Industry-standard pinout, tim ing and functions • High-perform ance CM O S silicon-gate process • Single +5V ±10% power supply (consult factory regarding 3.3V operation) • Fully I'l'L and CM O S compatible inputs and TTL


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    PDF MT42C8257 512-cycle 40-Pin

    MT42C8254

    Abstract: No abstract text available
    Text: MT42C8254 256K X 8 VRAM M IC R O N VRAM 256K X 8 DRAM WITH 512x8 SAM FEATURES • Industry-standard pinout, tim ing and functions • NIBBLE 4-bit W RITE and M ASKED W RITE access cycles • High-perform ance, CM O S silicon-gate process • Single +5V ±10% pow er supply


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    PDF MT42C8254 512-cycle 512x8 40-Pin

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE MT4V25632 256K x 32 VRAM MODULE |U|ICRON VRAM MODULE 256K x 32 DRAM WITH 512 x 32 SAM PIN ASSIGNMENT Top View 104-Pin SIMM • Proposed industry-standard pinout in a 104-pin single­ in-line package • High-perform ance, CM O S silicon-gate process


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    PDF MT4V25632 104-Pin 512-cycle

    uPD23C4000

    Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A


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    PDF 64Kx4 KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 64Kx8 256KX4 KM428C64 uPD23C4000 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000

    Untitled

    Abstract: No abstract text available
    Text: .¡AN a a ¡991 MICRON I M T42C8127 KCMHOIOCT ML 128K x 8 DRAM with 256 x 8 SAM VRAM FEATURES • • • • • • • • • • • Industry standard pin out, timing and functions High performance CMOS silicon gate process Single+5V ±10% power supply


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    PDF 512-cvde 275mW 100ns 40-Png MT42C8127

    Untitled

    Abstract: No abstract text available
    Text: MICRON TECHNOLOGY INC 3ÖE D blllSHI G0G2S72 2 IMRN T -H & -2 Z -3 7 128Kx8 DRAM WITH 256 X 8 SAM VRAM • • • • • • • • • • • Industry standard pinout, tim ing and functions H igh perform ance CMOS silicon gate process Single +5V ±10% pow er supply


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    PDF G0G2S72 128Kx8 512-cycle 275mW 100ns 40-Pin GQ02bQ4

    N MT42C8255

    Abstract: micron DRAM
    Text: M T42C8255 256K X 8 VR AM UIICRON VRAM 256K x 8 DRAM WITH 512 x 8 SAM • • • • • • • • • • • PIN ASSIGNMENT (Top View Industry-standard pinout, tim ing and functions High-perform ance, CM O S silicon-gate process Single +5V ±10% power supply


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    PDF T42C8255 512-cycle 300mW 40-Pin MT42C8255 N MT42C8255 micron DRAM

    Micron MT42C

    Abstract: No abstract text available
    Text: PRELIMINARY M T42C8255 256KX 8 VRAM MICRON I n'—r ^*rr'y VRAM 256K x 8 DRAM WITH 512x8 SAM FEATURES • • • 40-Pin SOJ Q-6 Vec C 1 SC [ 2 SO I [ 3 S02 ( 4 SOS [ 5 S0 4 [ 6 TRiOE [ 7 • NONPERSISTENT M ASKED WRITE • BLOCK WRITE • SPLIT READ TRANSFER


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    PDF 512-cycle 300mW 512x8 40-Pin MT42C8255 MT42CW55 Micron MT42C