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    Belden Inc TM-SD9-012-LNAN

    CBL FIBER OPTIC 125UM SINGLEMODE
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    DigiKey TM-SD9-012-LNAN Bulk 1
    • 1 $1.28
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    Newark TM-SD9-012-LNAN SPOOL 1
    • 1 $1977.55
    • 10 $1835.52
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    Belden Inc TM-SD9-012-LBAN

    CBL FIBER OPTIC 125UM SINGLEMODE
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    DigiKey TM-SD9-012-LBAN Bulk 1
    • 1 $4.89
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    Newark TM-SD9-012-LBAN SPOOL 1
    • 1 $7559.93
    • 10 $7016.95
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    MSD901 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    g1 TRANSISTOR SMD MARKING CODE

    Abstract: smd transistor marking zf SMD TRANSISTOR fet transistor smd zf MOSFET TRANSISTOR SMD MARKING CODE 11 2N7002PV
    Text: 2N7002PV 60 V, 350 mA N-channel Trench MOSFET Rev. 1 — 5 August 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF 2N7002PV OT666 AEC-Q101 g1 TRANSISTOR SMD MARKING CODE smd transistor marking zf SMD TRANSISTOR fet transistor smd zf MOSFET TRANSISTOR SMD MARKING CODE 11 2N7002PV

    PMWD16UN

    Abstract: No abstract text available
    Text: PMWD16UN Dual N-channel µTrenchMOS ultra low level FET Rev. 02 — 24 March 2005 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology.


    Original     		PDF PMWD16UN PMWD16UN

    Untitled

    Abstract: No abstract text available
    Text: PMWD16UN Dual µTrenchMOS ultra low level FET Rev. 01 — 20 December 2002 Product data M3D647 1. Product profile 1.1 Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability:


    Original     		PDF PMWD16UN M3D647 PMWD16UN OT530-1 OT530-1,

    Untitled

    Abstract: No abstract text available
    Text: PMWD30UN Dual µTrenchMOS ultra low level FET Rev. 01 — 22 January 2003 M3D647 Product data 1. Product profile 1.1 Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability:


    Original     		PDF PMWD30UN M3D647 PMWD30UN OT530-1 OT530-1,

    Untitled

    Abstract: No abstract text available
    Text: PMGD8000LN Dual µTrenchMOS logic level FET Rev. 01 — 27 February 2003 MBD128 Product data 1. Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMGD8000LN in SOT363 SC-88 .


    Original     		PDF PMGD8000LN MBD128 PMGD8000LN OT363 SC-88) MSA370

    Untitled

    Abstract: No abstract text available
    Text: 2N7002PS 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 1 July 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF 2N7002PS OT363 SC-88) AEC-Q101

    MSD901

    Abstract: 10939
    Text: PMGD8000LN Dual µTrenchMOS logic level FET Rev. 01 — 27 February 2003 MBD128 Product data 1. Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMGD8000LN in SOT363 SC-88 .


    Original     		PDF PMGD8000LN MBD128 PMGD8000LN OT363 SC-88) MSA370 771-PMGD8000LN-T/R MSD901 10939

    Untitled

    Abstract: No abstract text available
    Text: 2N7002PV 60 V, 350 mA N-channel Trench MOSFET Rev. 1 — 5 August 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF 2N7002PV OT666 AEC-Q101

    PMGD780SN

    Abstract: No abstract text available
    Text: PMGD780SN Dual N-channel µTrenchMOS standard level FET Rev. 01 — 11 February 2004 MBD128 Product data 1. Product profile 1.1 Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features


    Original     		PDF PMGD780SN MBD128 OT363 SC-88) PMGD780SN

    MOSFET TRANSISTOR SMD MARKING CODE A1

    Abstract: 2N7002PS m8 smd transistor g1 TRANSISTOR SMD MARKING CODE smd transistor marking A1 transistor smd marking A1 NXP SMD mosfet MARKING CODE MOSFET TRANSISTOR SMD MARKING A1
    Text: 2N7002PS 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 1 July 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF 2N7002PS OT363 SC-88) AEC-Q101 MOSFET TRANSISTOR SMD MARKING CODE A1 2N7002PS m8 smd transistor g1 TRANSISTOR SMD MARKING CODE smd transistor marking A1 transistor smd marking A1 NXP SMD mosfet MARKING CODE MOSFET TRANSISTOR SMD MARKING A1

    PMGD400UN

    Abstract: No abstract text available
    Text: PMGD400UN Dual N-channel µTrenchMOS ultra low level FET Rev. 01 — 3 March 2004 MBD128 Product data 1. Product profile 1.1 Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features


    Original     		PDF PMGD400UN MBD128 OT363 SC-88) PMGD400UN

    10939

    Abstract: PMGD8000LN
    Text: PMGD8000LN Dual µTrenchMOS logic level FET Rev. 01 — 27 February 2003 MBD128 Product data 1. Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMGD8000LN in SOT363 SC-88 .


    Original     		PDF PMGD8000LN MBD128 PMGD8000LN OT363 SC-88) 10939

    smd transistor marking zf

    Abstract: transistor smd zf 2N7002PV
    Text: 2N7002PV 60 V, 350 mA N-channel Trench MOSFET Rev. 1 — 5 August 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF 2N7002PV OT666 AEC-Q101 771-2N7002PV-115 2N7002PV smd transistor marking zf transistor smd zf

    NXP SMD TRANSISTOR MARKING CODE s1

    Abstract: DIODE smd marking CODE NZ bss138ps MOSFET TRANSISTOR SMD MARKING CODE A1 NXP SMD mosfet MARKING CODE 771-BSS138PS115
    Text: BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF BSS138PS OT363 SC-88) AEC-Q101 771-BSS138PS115 BSS138PS NXP SMD TRANSISTOR MARKING CODE s1 DIODE smd marking CODE NZ MOSFET TRANSISTOR SMD MARKING CODE A1 NXP SMD mosfet MARKING CODE

    Untitled

    Abstract: No abstract text available
    Text: PMWD26UN Dual µTrenchMOS ultra low level FET Rev. 01 — 22 January 2003 M3D647 Product data 1. Product profile 1.1 Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability:


    Original     		PDF PMWD26UN M3D647 PMWD26UN OT530-1 OT530-1,

    PMGD370XN

    Abstract: No abstract text available
    Text: PMGD370XN Dual N-channel µTrenchMOS extremely low level FET Rev. 01 — 27 February 2004 MBD128 Product data 1. Product profile 1.1 Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.


    Original     		PDF PMGD370XN MBD128 OT363 SC-88) PMGD370XN

    PMGD280UN

    Abstract: No abstract text available
    Text: PMGD280UN Dual N-channel µTrenchMOS ultra low level FET Rev. 01 — 10 February 2004 MBD128 Product data 1. Product profile 1.1 Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features


    Original     		PDF PMGD280UN MBD128 OT363 SC-88) PMGD280UN

    PMWD26UN

    Abstract: No abstract text available
    Text: PMWD26UN Dual N-channel µTrenchMOS ultra low level FET Rev. 02 — 19 May 2005 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features


    Original     		PDF PMWD26UN PMWD26UN

    nxp pmgd780sn

    Abstract: PMGD780SN
    Text: PMGD780SN Dual N-channel TrenchMOS standard level FET Rev. 02 — 19 April 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect transistor in a small SOT363 SC-88 Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.


    Original     		PDF PMGD780SN OT363 SC-88) PMGD780SN nxp pmgd780sn

    MOSFET TRANSISTOR SMD MARKING CODE A1

    Abstract: g1 TRANSISTOR SMD MARKING CODE DIODE smd marking CODE NZ NXP SMD TRANSISTOR MARKING CODE s1 BSS138PS NXP SMD mosfet MARKING CODE transistor SMD MARKING CODE nz MOSFET TRANSISTOR SMD MARKING CODE 11 smd code marking Nz smd transistor marking A1
    Text: BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF BSS138PS OT363 SC-88) AEC-Q101 MOSFET TRANSISTOR SMD MARKING CODE A1 g1 TRANSISTOR SMD MARKING CODE DIODE smd marking CODE NZ NXP SMD TRANSISTOR MARKING CODE s1 BSS138PS NXP SMD mosfet MARKING CODE transistor SMD MARKING CODE nz MOSFET TRANSISTOR SMD MARKING CODE 11 smd code marking Nz smd transistor marking A1

    PMGD290XN

    Abstract: No abstract text available
    Text: PMGD290XN Dual N-channel µTrenchMOS extremely low level FET Rev. 01 — 26 February 2004 MBD128 Product data 1. Product profile 1.1 Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.


    Original     		PDF PMGD290XN MBD128 OT363 SC-88) PMGD290XN

    Untitled

    Abstract: No abstract text available
    Text: BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF BSS138PS OT363 SC-88) AEC-Q101