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    MRF837 Search Results

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    MRF837 Price and Stock

    Microchip Technology Inc MRF8372

    RF TRANS NPN 16V 870MHZ 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MRF8372 Bulk 2,500
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    • 10000 $1.4375
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    Microchip Technology Inc MRF8372G

    RF TRANS NPN 16V 870MHZ 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MRF8372G Bulk 2,500
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    • 10000 $1.4375
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    Microchip Technology Inc MRF8372R2

    RF TRANS NPN 16V 870MHZ 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MRF8372R2 Reel 2,500
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    • 10000 $1.4375
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    Microchip Technology Inc MRF8372R1

    RF TRANS NPN 16V 870MHZ 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MRF8372R1 Reel 2,500
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    • 10000 $1.4375
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    Microchip Technology Inc MRF8372MR1

    TRANS NPN 16V 200MA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MRF8372MR1 Reel
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    Find more MRF837 price and stock on Findchips.com

    MRF837 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MRF837 Advanced Power Technology RF & MICROWAVE DISCRETE LOW POWER TRANSISTOR Original PDF
    MRF837 Advanced Semiconductor NPN SILICON RF LOW POWER TRANSISTOR Original PDF
    MRF837 Microsemi Bipolar/LDMOS Transistor Original PDF
    MRF837 Motorola European Master Selection Guide 1986 Scan PDF
    MRF837 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MRF8372 Advanced Semiconductor NPN SILICON LOW POWER TRANSISTOR Original PDF
    MRF8372 Microsemi RF & MICROWAVE DISCRETE LOW POWER TRANSISTOR Original PDF
    MRF8372 Microsemi Bipolar/LDMOS Transistor Original PDF
    MRF8372 Motorola RF LOW POWER TRANSISTOR NPN SILICON Original PDF
    MRF8372 Motorola European Master Selection Guide 1986 Scan PDF
    MRF8372 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MRF8372G Advanced Power Technology RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Original PDF
    MRF8372G Microsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS NPN 16V 200MA SO8 Original PDF
    MRF8372GR1 Microsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS NPN 16V 200MA SO8 Original PDF
    MRF8372GR2 Microsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS NPN 16V 200MA SO8 Original PDF
    MRF8372R1 Microsemi RF & MICROWAVE DISCRETE LOW POWER TRANSISTOR Original PDF
    MRF8372R1 Motorola RF LOW POWER TRANSISTOR NPN SILICON Original PDF
    MRF8372R2 Microsemi RF & MICROWAVE DISCRETE LOW POWER TRANSISTOR Original PDF
    MRF8372R2 Motorola RF LOW POWER TRANSISTOR NPN SILICON Original PDF

    MRF837 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    8372 motorola

    Abstract: NPN TRANSISTOR Z4 Conjugated power amplifier MRF8372 MRF8372 equivalent J31 transistor marking Z4 MRF837 MRF8372R1 960-MHz
    Text: MOTOROLA Order this document by MRF8372/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MRF8372R1, R2 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics


    Original     		PDF MRF8372/D MRF8372R1, MRF8372 8372 motorola NPN TRANSISTOR Z4 Conjugated power amplifier MRF8372 equivalent J31 transistor marking Z4 MRF837 MRF8372R1 960-MHz

    MRF8372

    Abstract: MRF8372G
    Text: MRF8372, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF8372G, R1, R2 * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • Specified @ 12.5V, 870 MHz characteristics • Output Power = 750 mW • Minimum Gain = 8.0dB • Efficiency 60% Typical


    Original     		PDF MRF8372, MRF8372G, 870MHz, MRF8372 MRF8372G

    Untitled

    Abstract: No abstract text available
    Text: MRF8372, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Specified @ 12.5V, 870 MHz characteristics • Output Power = 750 mW • Minimum Gain = 8.0dB • Efficiency 60% Typical • Cost Effective SO-8 package DESCRIPTION: SO-8 R1 suffix–Tape and Reel, 500 units


    Original     		PDF MRF8372, 870MHz,

    MRF8372

    Abstract: PG 750 8 PIN
    Text: MRF8372 NPN SILICON LOW POWER TRANSISTOR DESCRIPTION: The ASI MRF8372 is Designed for Wideband large signal stages in the 800 MHz and UHF frequency ranges. PACKAGE STYLE SO-8 FEATURES: • POUT = 750 mW • PG = 8.0 dB min. • η = 60% typical • R1 suffix – Tape and Reel, 500 units


    Original     		PDF MRF8372 MRF8372 PG 750 8 PIN

    mrf8372

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF837/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MRF837 RF Low Power Transistor MRF8372, R1, R2 Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics


    Original     		PDF MRF837/D MRF837 MRF8372, MRF837 MRF837/D* mrf8372

    52803

    Abstract: No abstract text available
    Text: MRF8372, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Specified @ 12.5V, 870 MHz characteristics • Output Power = 750 mW • Minimum Gain = 8.0dB • Efficiency 60% Typical • Cost Effective SO-8 package SO-8 R1 suffix–Tape and Reel, 500 units


    Original     		PDF MRF8372, MRF8372 870MHz, MRF8372 52803

    Untitled

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF837 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Specified @ 12.5V, 870 MHz characteristics • Output Power = 750 mW • Minimum Gain = 8.0dB •


    Original     		PDF MRF837 870MHz,

    MRF837

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF837 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Specified @ 12.5V, 870 MHz characteristics • Output Power = 750 mW • Minimum Gain = 8.0dB •


    Original     		PDF MRF837 870MHz, MSC1318 MRF837

    motorola 8372

    Abstract: 8372 motorola
    Text: MOTOROLA Order this document by MRF8372/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MRF8372R1, R2 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics


    Original     		PDF MRF8372/D MRF8372 MRF8372R1, MRF8372/D motorola 8372 8372 motorola

    MRF8372

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF8372, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Specified @ 12.5V, 870 MHz characteristics • Output Power = 750 mW • Minimum Gain = 8.0dB


    Original     		PDF MRF8372, 870MHz, MSC1318 MRF8372

    Untitled

    Abstract: No abstract text available
    Text: MRF8372, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF8372G, R1, R2 * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • Specified @ 12.5V, 870 MHz characteristics • Output Power = 750 mW • Minimum Gain = 8.0dB • Efficiency 60% Typical


    Original     		PDF MRF8372, MRF8372G, 870MHz,

    Untitled

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF837 MRF837G RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • Specified @ 12.5V, 870 MHz characteristics


    Original     		PDF MRF837 MRF837G 870MHz,

    MRF837

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF837 MRF837G RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • Specified @ 12.5V, 870 MHz characteristics


    Original     		PDF MRF837 MRF837G 870MHz, MRF837

    MRF837

    Abstract: No abstract text available
    Text: MRF837 NPN SILICON RF LOW POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE MACRO-X The ASI MRF837 is Designed primerily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. MILLIMETERS INCHES DIM MIN MAX MIN MAX A 4.44 5.21 0.175 0.205


    Original     		PDF MRF837 MRF837 mW/870

    MRF581G

    Abstract: MRF581AG MRF581A s-parameter 2N3866A 2N4427 MRF4427 MRF553 MRF581
    Text: MRF581 MRF581G MRF581A MRF581AG *G Denotes RoHS Compliant, Pb free Terminal Finish RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Low Noise - 2.5 dB @ 500 MHZ Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA


    Original     		PDF MRF581 MRF581G MRF581A MRF581AG 2N6255 2N5179 MRF581G MRF581AG MRF581A s-parameter 2N3866A 2N4427 MRF4427 MRF553 MRF581

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original     		PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    mce544

    Abstract: bfr96 equivalent MC3042 Bipolar Transistor y 200Mhz MRF237 / SD1127 MC1343 MCE545 transistor 5ghz pnp MC1309 MRF630
    Text: MC3042 WAFFLE PACK DIE RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MC3042 is a high gain, discrete silicon bipolar transistor, shipped in waffle pack. ! 1Watt Output Power @ 400MHz ! Gold Back Metal IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com


    Original     		PDF MC3042 400MHz SD1127/MRF237 MS1649/MRF630 MRF837/MRF8372 MRF559 400mA 200mA mce544 bfr96 equivalent Bipolar Transistor y 200Mhz MRF237 / SD1127 MC1343 MCE545 transistor 5ghz pnp MC1309 MRF630

    2N4427

    Abstract: 1300 NPN MRF553 MRF555 MRF559 MRF607 2N3866A 2N5179 2N6255 MRF4427
    Text: 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 1. Emitter 2. Base 3. Collector 500 MHz Current-Gain Bandwidth Product @ 50mA TO-39


    Original     		PDF 2N4427 To-39 MRF4427, 2N4427 1300 NPN MRF553 MRF555 MRF559 MRF607 2N3866A 2N5179 2N6255 MRF4427

    MHW707-2

    Abstract: MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861
    Text: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar


    Original     		PDF 714U/1 MHLW8000 MHW707-2 MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861

    2n4427 MOTOROLA

    Abstract: motorola 2N4427 2N4427 BFR90 amplifier 2N4427 equivalent bfr91 npn UHF transistor 2N5179 npn UHF transistor BFR96 LOW POWER TRANSISTOR MRF581A mrf5943c motorola
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz


    Original     		PDF 2N4427 To-39 BFR91 BFR90 MRF545 MRF544 MSC1301 2n4427 MOTOROLA motorola 2N4427 2N4427 BFR90 amplifier 2N4427 equivalent bfr91 npn UHF transistor 2N5179 npn UHF transistor BFR96 LOW POWER TRANSISTOR MRF581A mrf5943c motorola

    MRF586

    Abstract: MRF517 low cost BFR90 transistor 2n2857 UHF transistor common base amplifier 2n5179 bfr90 equivalent BFR91 transistor BFR96 RF POWER TRANSISTOR NPN MRF904
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF517 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Gpe = 10 dB (typ) @ 60 mA, 300 MHz • 3 GHz Current-Gain Bandwidth Product (min) @ 60mA


    Original     		PDF MRF517 To-39 MRF571 BFR91 BFR90 MRF545 MRF544 MRF517 MRF586 low cost BFR90 transistor 2n2857 UHF transistor common base amplifier 2n5179 bfr90 equivalent BFR91 transistor BFR96 RF POWER TRANSISTOR NPN MRF904

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF8372 The RF Line NPN Silicon High-Frequency TVansistor . . . designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW


    OCR Scan     		PDF MRF8372 9-j20 MRF8372

    V 518 J19

    Abstract: j6812 MRF837 transistor j147 J-6812
    Text: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA MRF837 The RF Line 750 m W NPN SILICON RF LOW POWER TRANSISTOR . d e sign e d prim arily for w ide b and large s ign al predriver stage s in 800 M H z an d U H F frequency ranges. 870 M H z RF LOW POWER TRANSISTOR


    OCR Scan     		PDF MRF837 Continu775 V 518 J19 j6812 MRF837 transistor j147 J-6812

    ferroxcube 56-590-65

    Abstract: MRF8372 equivalent macro-X ceramic
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Pow er Transistor MRF837 MRF8372, R1, R2 Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics


    OCR Scan     		PDF MRF8372 2-J16 MRF837 MRF8372, ferroxcube 56-590-65 MRF8372 equivalent macro-X ceramic