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    MPZ2012S300AT Search Results

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    TDK Corporation MPZ2012S300AT000

    FERRITE BEAD 30 OHM 0805 1LN
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    DigiKey MPZ2012S300AT000 Digi-Reel 82,726 1
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    MPZ2012S300AT000 Cut Tape 82,726 1
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    MPZ2012S300AT000 Reel 82,450 4,000
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    Avnet Americas MPZ2012S300AT000 Reel 152,000 15 Weeks 4,000
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    Mouser Electronics MPZ2012S300AT000 199,095
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    Verical MPZ2012S300AT000 7,700 4,167
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    MPZ2012S300AT000 3,083 745
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    Arrow Electronics MPZ2012S300AT000 Cut Strips 7,700 15 Weeks 4,167
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    Newark MPZ2012S300AT000 Reel 248,000 4,000
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    Quest Components MPZ2012S300AT000 6,400
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    MPZ2012S300AT000 3,816
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    TTI MPZ2012S300AT000 Reel 304,000 4,000
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    TME MPZ2012S300AT000 1,788 1
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    Avnet Abacus MPZ2012S300AT000 240,000 19 Weeks 4,000
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    TDK Corporation MPZ2012S300ATD25

    FERRITE BEAD 30 OHM 0805 1LN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MPZ2012S300ATD25 Cut Tape 4,177 1
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    MPZ2012S300ATD25 Digi-Reel 4,177 1
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    MPZ2012S300ATD25 Ammo Pack 16 Weeks, 3 Days 1
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    Mouser Electronics MPZ2012S300ATD25 202,870
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    Verical MPZ2012S300ATD25 648,000 4,000
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    Arrow Electronics MPZ2012S300ATD25 648,000 15 Weeks 4,000
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    MPZ2012S300ATD25 Cut Strips 13,125 15 Weeks 3,690
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    Newark MPZ2012S300ATD25 Cut Tape 3,123 1
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    Quest Components MPZ2012S300ATD25 19,200
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    TTI MPZ2012S300ATD25 Reel 1,700,000 4,000
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    TME MPZ2012S300ATD25 1,750 1
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    Avnet Abacus MPZ2012S300ATD25 19 Weeks 4,000
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    TDK Corporation MPZ2012S300AT

    Ferrite Bead, 30R, 6A, 0805; Ferrite Case Style:0805 [2012 Metric]; Impedance @ 100Mhz:30Ohm; Dc Current Rating:6A; Product Range:Mpz Series; Dc Resistance Max:0.01Ohm; Impedance Tolerance:± 10Ohm; Automotive Qualification Rohs Compliant: Yes |Tdk MPZ2012S300AT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark MPZ2012S300AT Cut Tape 29,580 10
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    Bristol Electronics MPZ2012S300AT 5,822
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    MPZ2012S300AT 708
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    Quest Components MPZ2012S300AT 3,516
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    TDK Corporation MPZ2012S300ATA1N

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MPZ2012S300ATA1N 7,596
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    Quest Components MPZ2012S300ATA1N 6,076
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    TDK Corporation MPZ2012S300AT00

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    Bristol Electronics MPZ2012S300AT00 1,484
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    MPZ2012S300AT Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MPZ2012S300AT000 TDK Filters - Ferrite Beads and Chips - FERRITE BEAD 30 OHM 0805 1LN Original PDF
    MPZ2012S300ATD25 TDK Filters - Ferrite Beads and Chips - FERRITE BEAD 30 OHM 0805 1LN Original PDF

    MPZ2012S300AT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MPZ2012S300AT000

    Abstract: No abstract text available
    Text: Page 1 of 1 Product Name Series Type Part Number Chip Beads MPZ Series 2012 Type MPZ2012S300AT000 Product Lifecycle Stage PROD Specification Summary/Applications/Feature Mounting Method Flag Yes Processing MULTI-LAYER Shape Chip Number of Circuits Nom Summary


    Original
    PDF MPZ2012S300AT000 180mm TJA102 MPZ2012S300AT000262. MPZ2012S300AT000

    S600C

    Abstract: MPZ1005S100CT
    Text: E M C C o m p o n e n t s December 2013 Chip Beads For power line MPZ series MPZ0603 MPZ1005 MPZ1608 MPZ2012 0603[0201 inch]* 1005[0402 inch] 1608[0603 inch] 2012[0805 inch] * Dimensions Code JIS[EIA] 2/23 E M C C o m p o n e n t s REMINDERS FOR USING THESE PRODUCTS


    Original
    PDF MPZ0603 MPZ1005 MPZ1608 MPZ2012 60min. 200min. S600C MPZ1005S100CT

    NI-1230-4H

    Abstract: ATC100B2R1BT500XT NI-1230-4S MRF8P8300HS
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P8300H Rev. 1, 4/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P8300HR6 MRF8P8300HSR6 Designed for W-CDMA and LTE base station applications with frequencies


    Original
    PDF MRF8P8300H MRF8P8300HR6 MRF8P8300HSR6 NI-1230-4H ATC100B2R1BT500XT NI-1230-4S MRF8P8300HS

    MRF8P9040N

    Abstract: mrf8p ATC100B820JT RO4350B
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P9040N Rev. 0, 9/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for


    Original
    PDF MRF8P9040N MRF8P9040NR1 MRF8P9040NBR1 728-its MRF8P9040N mrf8p ATC100B820JT RO4350B

    circuit humidity sensor his06

    Abstract: DUSB-ARA42-T11A-FA DUSB-BRA42-T11-FA GF12-US0520 Humidifier his-06 "Humidity Sensors" his-06 mpz2012s300AT MCR03EZPF102 MB91F662 GCM32ER71E106KA42L
    Text: FR80 Family 32-BIT MICROCONTROLLER MB91F662 bits pot black USB board User's Manual Disclaimer and Legal Notice „ The contents of this document are subject to change without a prior notice, thus ask our sales division about the latest one. „ The descriptions of functions and application circuit examples in this document are provided


    Original
    PDF 32-BIT MB91F662 circuit humidity sensor his06 DUSB-ARA42-T11A-FA DUSB-BRA42-T11-FA GF12-US0520 Humidifier his-06 "Humidity Sensors" his-06 mpz2012s300AT MCR03EZPF102 MB91F662 GCM32ER71E106KA42L

    j821

    Abstract: MRF8S26060H C5750JF1H226ZT AN1955 JESD22-A114 C5750X7R1H106 465I-02 MRF8S26060HR MRF8S26060HS
    Text: Document Number: MRF8S26060H Rev. 0, 4/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S26060HR3 MRF8S26060HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies


    Original
    PDF MRF8S26060H MRF8S26060HR3 MRF8S26060HSR3 MRF8S26060HR3 j821 MRF8S26060H C5750JF1H226ZT AN1955 JESD22-A114 C5750X7R1H106 465I-02 MRF8S26060HR MRF8S26060HS

    ATC600F100JT250XT

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from


    Original
    PDF MRF8P20100H MRF8P20100HR3 MRF8P20100HSR3 ATC600F100JT250XT

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P8300H Rev. 0, 1/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P8300HR6 MRF8P8300HSR6 Designed for W-CDMA and LTE base station applications with frequencies


    Original
    PDF MRF8P8300H MRF8P8300HR6 MRF8P8300HSR6 MRF8P8300HR6

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF8S26060H Rev. 0, 4/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S26060HR3 MRF8S26060HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies


    Original
    PDF MRF8S26060H MRF8S26060HR3 MRF8S26060HSR3 MRF8S26060HR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P9040N Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for


    Original
    PDF MRF8P9040N MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1

    s300a

    Abstract: No abstract text available
    Text: E M C C o m p o n e n t s December 2013 Chip Beads For power line MPZ series MPZ1005 MPZ1608 MPZ2012 1005[0402 inch]* 1608[0603 inch] 2012[0805 inch] * Dimensions Code JIS[EIA] For automobiles (2/19) E M C C o m p o n e n t s REMINDERS FOR USING THESE PRODUCTS


    Original
    PDF MPZ1005 MPZ1608 MPZ2012 60min. 200min. 300min. s300a

    transistor J128

    Abstract: j128 MRF8S7120N mpz2012s300AT CRCW12061K00FKEA 748 transistor on AN1955 MPZ2012S300AT000 ATC100B1R0BT500XT MRF8S7120NR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S7120N Rev. 0, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7120NR3 Designed for CDMA base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original
    PDF MRF8S7120N MRF8S7120NR3 transistor J128 j128 MRF8S7120N mpz2012s300AT CRCW12061K00FKEA 748 transistor on AN1955 MPZ2012S300AT000 ATC100B1R0BT500XT MRF8S7120NR3

    MPZ2012S102AT

    Abstract: No abstract text available
    Text: E M C C o m p o n e n t s July 2013 Chip Beads For power line MPZ series MPZ0603 MPZ1005 MPZ1608 MPZ2012 0603[0201 inch]* 1005[0402 inch] 1608[0603 inch] 2012[0805 inch] * Dimensions Code JIS[EIA] 2/23 E M C C o m p o n e n t s REMINDERS FOR USING THESE PRODUCTS


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    PDF MPZ0603 MPZ1005 MPZ1608 MPZ2012 60min. 160min. MPZ2012S102AT

    *J532

    Abstract: C5750X7R1H106KT j692 C5750KF1H226ZT SEMICONDUCTOR J598 ATC600F100JT250XT MRF8P20100H SMT3725ALNF ATC600F1R2 J529
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from


    Original
    PDF MRF8P20100H MRF8P20100HR3 MRF8P20100HSR3 *J532 C5750X7R1H106KT j692 C5750KF1H226ZT SEMICONDUCTOR J598 ATC600F100JT250XT MRF8P20100H SMT3725ALNF ATC600F1R2 J529

    MRF8P20100HR3

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from


    Original
    PDF MRF8P20100H MRF8P20100HR3 MRF8P20100HSR3

    bosch Mass Air Flow Sensor

    Abstract: TG-22D-F539 dvd writer circuit diagram ZJYS81R5-2P24T-G01 starter bosch 416 ntc temperature sensor bosch NTCG164BH103JT1 CSTCR4M00G15C FT232R timing diagram GCM1552C1H220JZ02
    Text: AN07-00180-3E FR Family FR60 Lite 32-BIT MICROCONTROLLER MB91F267N bits pot red CAN-Motor board User’s Manual AN07-00180-3E Revision History Date Revision August 01, 2008 Revision 1.0: Initial release September 17, 2008 Revision 1.1 On p.12, type corrected. Correct: NL565050T-103J, Incorrect: L565050T-103J


    Original
    PDF AN07-00180-3E 32-BIT MB91F267N NL565050T-103J, L565050T-103J Start91265 bosch Mass Air Flow Sensor TG-22D-F539 dvd writer circuit diagram ZJYS81R5-2P24T-G01 starter bosch 416 ntc temperature sensor bosch NTCG164BH103JT1 CSTCR4M00G15C FT232R timing diagram GCM1552C1H220JZ02

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S7120N Rev. 0, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7120NR3 Designed for CDMA base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original
    PDF MRF8S7120N MRF8S7120NR3

    ATC100B4R7CT500XT

    Abstract: J376
    Text: Document Number: MRF8S9232N Rev. 0, 10/2011 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S9232NR3 Designed for CDMA base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original
    PDF MRF8S9232N MRF8S9232NR3 ATC100B4R7CT500XT J376

    MRF8P9040N

    Abstract: MPZ2012S300AT000 MRF8P9040GNR1 AN1955 293D106X9050E2TE3 MRF8P9040NB ATC100B820JT MRF8P9040NR1 J583
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P9040N Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for


    Original
    PDF MRF8P9040N 728-9subsidiaries, MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1 MRF8P9040N MPZ2012S300AT000 AN1955 293D106X9050E2TE3 MRF8P9040NB ATC100B820JT J583

    MRF8P8300HS

    Abstract: ATC100B2R0BT500X MRF8P8300H MPZ2012S300A AN1955 ATC100B100JT500XT ATC Semiconductor Devices MPZ2012S300AT ATC100B121JT500XT j004
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P8300H Rev. 0, 1/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P8300HR6 MRF8P8300HSR6 Designed for W-CDMA and LTE base station applications with frequencies


    Original
    PDF MRF8P8300H MRF8P8300HR6 MRF8P8300HSR6 MRF8P8300HR6 MRF8P8300HS ATC100B2R0BT500X MRF8P8300H MPZ2012S300A AN1955 ATC100B100JT500XT ATC Semiconductor Devices MPZ2012S300AT ATC100B121JT500XT j004

    data 8873 64 pin colour tv ic

    Abstract: EPCOS bb 2790 varistor 250v 592 PH epcos 565-2 BT 4840 amp 6-hole Ferroxcube Wide band HF Choke SRF 3897 NFM55PC155F1H4L B82789-C104 cx 2602 semiconductor
    Text: 1209 Technical portal and online community for Design Engineers - www.element-14.com EMC, Filters & Suppression Page Cable Ferrites . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Ferrite Transformers . . . . . . . . . . . . . . . . . . . . . . .


    Original
    PDF element-14 data 8873 64 pin colour tv ic EPCOS bb 2790 varistor 250v 592 PH epcos 565-2 BT 4840 amp 6-hole Ferroxcube Wide band HF Choke SRF 3897 NFM55PC155F1H4L B82789-C104 cx 2602 semiconductor