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    ML303 Price and Stock

    Astro Tool Corp ATML-3033B

    TOOL REMOVAL TIP M81969/30B-33
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ATML-3033B Bulk 1
    • 1 $57.36
    • 10 $57.36
    • 100 $57.36
    • 1000 $57.36
    • 10000 $57.36
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    Astro Tool Corp ATML-3031B

    TOOL REMOVAL TIP M81969/30B-31
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ATML-3031B Bulk 1
    • 1 $57.36
    • 10 $57.36
    • 100 $57.36
    • 1000 $57.36
    • 10000 $57.36
    		Buy Now

    Astro Tool Corp ATML-3030B

    TOOL REMOVAL TIP M81969/30B-30
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ATML-3030B Bulk 1
    • 1 $57.36
    • 10 $57.36
    • 100 $57.36
    • 1000 $57.36
    • 10000 $57.36
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    Astro Tool Corp ATML-3034B

    TOOL REMOVAL SET = M81969/30B-34
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ATML-3034B Bulk 1
    • 1 $175.4
    • 10 $175.4
    • 100 $175.4
    • 1000 $175.4
    • 10000 $175.4
    		Buy Now

    Astro Tool Corp ATML-3036B

    TOOL REMOVAL SET = M81969/30B-36
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ATML-3036B Bulk 1
    • 1 $175.4
    • 10 $175.4
    • 100 $175.4
    • 1000 $175.4
    • 10000 $175.4
    		Buy Now
    Find more ML303 price and stock on Findchips.com

    ML303 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ML303 Micro Electronics Semiconductor Device Data Book Scan PDF
    ML303 Micro Electronics PIN PHOTO DIODE Scan PDF
    ML303B Micro Electronics PIN PHOTO DIODE Scan PDF

    ML303 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EIA-583

    Abstract: JEP-113 EIA 481 rev d JESD-625 US020 SOT-89-AV ML0606-A EIA-481 empty pockets EIA 481 ML3030
    Text: Tape and Reel Packaging and Handling Requirements Rev C 2/3/09 TABLE OF CONTENTS Section Section Description Page 1.0 SCOPE 3 2.0 APPLICABLE DOCUMENTS 3 3.0 MATERIALS 3 4.0 REQUIREMENTS 4 4.1 Approved Package Tapes 4 4.2 ESD Handling 15 4.3 Taping 15 4.4 Packaging


    Original     		PDF XA20053B EIA-481-B JESD-625 EIA-583 JEP-113 EIA 481 rev d JESD-625 US020 SOT-89-AV ML0606-A EIA-481 empty pockets EIA 481 ML3030

    nokia mobile jumper setting

    Abstract: nokia 100 mobile jumper setting LG mobile usb cable wire pin diagram nokia mobile phone repair circuit SD-C2502 nokia mobile charger circuit mainboard t 13 epson nokia 520 scheme nokia 100 mobile jumper KEY PAD IC circuit diagram of nokia 101
    Text: TravelMate 610 Service Guide Service guide files and updates are available on the AIPG/CSD web; for more information, please refer to http://csd.acer.com.tw PART NO.: 49.41Q04.001 DOC. NO.: SG363-0103A PRINTED IN TAIWAN Revision History Please refer to the table below for the updates made on TravelMate 610 service guide.


    Original     		PDF 41Q04 SG363-0103A nokia mobile jumper setting nokia 100 mobile jumper setting LG mobile usb cable wire pin diagram nokia mobile phone repair circuit SD-C2502 nokia mobile charger circuit mainboard t 13 epson nokia 520 scheme nokia 100 mobile jumper KEY PAD IC circuit diagram of nokia 101

    Silectron core

    Abstract: TWC-500 permalloy 80 2605SC ring core permalloy bh curve supermalloy bh curve MAGNESIL - N Transformer and Inductor Design Handbook, orthonol ring core permalloy 80
    Text: TAPE WOUND CORES Division of Spang & Company DESIGN MANUAL TWC-500 ABOUT MAGNETICS Since 1949 Magnetics, a division of Spang & Company, has been a leading world supplier of precision, high permeability magnetic components and materials to the electronics industry. Applications for


    Original     		PDF TWC-500 TWC-500 Silectron core permalloy 80 2605SC ring core permalloy bh curve supermalloy bh curve MAGNESIL - N Transformer and Inductor Design Handbook, orthonol ring core permalloy 80

    Untitled

    Abstract: No abstract text available
    Text: m MÊÊk PV ML303B MICRO •= DESCRIPTION ML303B is a side on type PIN photodiode with inherent visible light rejective filter epoxy encapsulation. It feaxires high sensitivity and small junction capacitance make it possible to operate at high frequency application.


    OCR Scan     		PDF ML303B ML303B 150mW ML3038

    H-90

    Abstract: ML303B
    Text: ML303B PIN PHOTO DIODE DESCRIPTION ML303B is a side on type PIN photodiode with inherent visible light rejective filter epoxy encapsulation. R2.5 0.1 5.0(0.2 It feaxires high sensitivity 3.0 (0.13) 0.6(0.024) x45° « . 5(0.06) and small junction capacitance make it possible


    OCR Scan     		PDF ML303B 100mA 150mW H-90

    Untitled

    Abstract: No abstract text available
    Text: CRO ML303B PIN PHOTO DIODE DESCRIPTION ML303B is a side on type PIN photodiode with inherent visible light rejective filter epoxy encapsulation. It fea:ures high sensitivity and small junction capacitance make it possible to operate at high frequency application.


    OCR Scan     		PDF ML303B ML303B Oct-98

    Untitled

    Abstract: No abstract text available
    Text: CRO ML303 PIN PHOTO DIODE DESCRIPTION ML303 is a side on type PIN photodiode with inherent visible light encapsulation. It features R2.5 0.•• D 5.0(0.2 rejective filter epoxy high sensitivity ( r 3.0 <0.13) 0.6(0.024) _ J x45° i 1.5(0.06) 1 and smali junction capacitance m ake it possible


    OCR Scan     		PDF ML303 ML303 100mA

    n004

    Abstract: MIB57T-K ML303
    Text: CRO MEB57T-K INFRARED EMITTING DIODE 04.98 DESCRIPTION " 0 . 196 MIB57T-K is a GaAlAs infrared emitting diode molded in clear plastic 5mm diameter package. With the lensing effect of the package. MIB57T-K is spectrally matched to the PIN photo diode ML303.


    OCR Scan     		PDF MIB57T-K ML303. 10/iiS, 100mA 100mA 150mW n004 ML303

    MIB57T-K

    Abstract: ML303
    Text: MEB57T-K INFRARED EMITTING DIODE 04.98 ’ 0.196 DESCRIPTION MIB57T-K is a GaAlAs infrared emitting diode molded in clear plastic 5mm diameter package. With the lensing effect of the package. MIB57T-K is spectrally matched to the PIN photo diode ML303. 6.7


    OCR Scan     		PDF MEB57T-K MIB57T-K B57T-K ML303. 100mA 150mW ML303

    MIB57T-K

    Abstract: ML303
    Text: CRO MEB57T-K INFRARED EMITTING DIODE 04.98 ' 0.196 DESCRIPTION MIB57T-K is a GaAIAs infrared emitting diode molded in clear plastic 5mm diameter package. With the lensing effect of the package. MIB57T-K is spectrally matched to the PIN photo diode ML303.


    OCR Scan     		PDF MIB57T-K ML303. 10/Lts, 100mA 4351G 100mA 150mW ML303

    L303A

    Abstract: DL78 L 31A MA1515 EL79D
    Text: Pin Photo Diodes TYPE NO. >_p nm SENSITIVITY Id H (nA/lx) MAX TYP (mW/cm) (nA) ^on toff VR (V) TYP (ns) TYP (ns) ML303 940 50 5 30 10 50 50 ML303B 880 50 5 30 10 50 50 ML308 940 45 1 30 10 50 50 ML308A 880 45 1 30 10 50 50 PACKAGE CASE NO. Side On Type L-303a


    OCR Scan     		PDF ML303 ML303B ML308 ML308A L-303a -308C MEL78 MEL78D MEL79 EL79D L303A DL78 L 31A MA1515

    ML3038

    Abstract: ML303B
    Text: MICRO PIN PHOTO DIODE DESCRIPTION ML303B is a side on type PIN photodiode with inherent visible light rejective filter epoxy encapsulation. It feaxires high sensitivity and small junction capacitance make it possible to operate at high frequency application.


    OCR Scan     		PDF ML303B 100mA ML3038

    ML303

    Abstract: 2870
    Text: ML303 PIN PHOTO DIODE DESCRIPTION ML303 is a side on type PIN photodiode with inherent visible light rejective filter epoxy encapsulation. It features R2.5 0.1 - ( 5.0(0.2)- high sensitivity D 3,0 0,6(0,024) x45° (0-13) .5(0.06} and small junction capacitance make it possible


    OCR Scan     		PDF ML303 100mA 150mW Ct-2870Â 4351Q 2870

    Untitled

    Abstract: No abstract text available
    Text: Pin Photo Diodes TYPE NO. X.p nm ML303 ML308 940 940 SENSITIVITY (nA/lx) 50 25 Id H MAX (mW/cm1) (nA) 5 1 30 30 VR (V) 10 10 t«lf TYP TYP (ns) (ns) 50 50 50 50 PACKAGE CASE NO. Side On Type Black Plastic 1-77 1-78 Photo Transistor TYPE NO. MALI 00 MAH 100


    OCR Scan     		PDF ML303 ML308 MEL78 MEL80 MEL79 MEL79D MEL709 O-18L O-18H

    2SA532

    Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
    Text: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G


    OCR Scan     		PDF 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N4004 1N4005 2SA532 BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357

    MI301

    Abstract: No abstract text available
    Text: bSMTôET DD1 7 7 3 2 LTT • ANTENNA SWITCH M I303 PIN DIODE RF POWER SWITCHING DESCRIPTION Dimension: mm OUTLINE DRAWING The MI303 PIN diode is employing high reliability glass construction, designed for solid state antenna switches in commercial two-way radios.


    OCR Scan     		PDF MI303 MI301 MI303 230nH MI301

    ML309

    Abstract: No abstract text available
    Text: MICRO ELECTRONICS LTD SIE D • bOT17flfi GOÜ1G1S TTH ■ MEHK Infrared Emitting Diodes T -4 I-1 3 TYPE p Àp V TYP mW (mA) f MAX (V) 1 2 01/2 1 PACKAGE CASE 35 35 03.2mm 0.69" lead 1-5 20 20 35 35 T-1 standard 03.0mm 1-43 2.0 2.0 100 100 30 18 03.0mm flangeless


    OCR Scan     		PDF bOT17flfi MI31T MI31TA MI32T MI32TA MI37T MIB37T MI38T MIB38T MI51T ML309

    louver

    Abstract: MU300 LUM-5122
    Text: Dot matrix units Dot matrix units The LUM series of dot matrix units can be used to display any image or character. They are available in 16 x 16, 24 x 24, 16 x 32, and 24 x 48 matrices. They can display three colors, red and green and when both elements are lit, the combination is an orange color. The units are


    OCR Scan     		PDF LUM-2563 MU301 MU302 ML304 LUM-2565 MU304 ML302 LUM-2568 louver MU300 LUM-5122

    BOX69477

    Abstract: MIB57T-J ML303B
    Text: MIB57T-J INFRARED EMITTING DIODE DESCRIPTION MEB57T-J is a GaAlAs infrared emitting diode molded in clear plastic 5mm diameter package. With the lensing effect of the package, it has an very narrow radiation angle measured from the optical axis to the half power point.


    OCR Scan     		PDF MIB57T-J MEB57T-J ML303B. 10\iS, BOX69477, 100mA 175mW BOX69477 ML303B

    BOX69477

    Abstract: ML303B 100mA-1A
    Text: CRO MIB57T-J INFRARED EM ITTIN G D IODE DESCRIPTION MEB57T-J is a GaAlAs infrared emitting diode molded in clear plastic 5mm diameter package. With the lensing effect of the package, it has an very narrow radiation angle measured from the optical axis to the half power point.


    OCR Scan     		PDF MEB57T-J M1B57T-J ML303B. BOX69477, 100mA 175mW BOX69477 ML303B 100mA-1A

    ML309

    Abstract: No abstract text available
    Text: Infrared Emitting Diodes 2 0 Vi degree PACKAGE CASE NO. 20 20 35 35 0 3.2mm 0.69" lead 1-4 1.6 1.8 20 20 35 35 T-l standard 0 3.0mm 1-61 20 20 2.0 2.0 100 100 30 18 0 3.0mm flangeless 1-7 1-8 2.0 2.0 20 20 2.0 2.0 100 100 30 20 0 3.0mm flangeless low profile lens


    OCR Scan     		PDF MI31T MI31TA MI32T MI32TA MI33T MIB33T MI38T MIB38T MI51T MI51TA ML309