3906 PNP TRANSISTOR
Abstract: irlml6401tr LMK316BJ475KL MAX881 AN-0002 MAX881R RFS1003 RFS1006 AN0002 "Dual PNP Transistor" temperature compensation
Text: MESFET Amplifier Biasing AN-0002 Biasing Circuits and Considerations for GaAs MESFET Power Amplifiers Summary In order to properly use any amplifier it is necessary to provide the correct operating environment, especially the DC bias. This application note outlines some of the considerations for biasing MESFET
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AN-0002
3906 PNP TRANSISTOR
irlml6401tr
LMK316BJ475KL
MAX881
AN-0002
MAX881R
RFS1003
RFS1006
AN0002
"Dual PNP Transistor" temperature compensation
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MGF1951A
Abstract: MGF1951A-01 MGF1951
Text: MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1951 MGF1951A PRELIMINARY Medium Power Microwave MESFET DESCRIPTION The MGF1951A is a 20mW MESFET for S- to Ku-band driver amplifiers and oscillators. Its lead-less ceramic package assures minimum parasitics. FEATURES
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MGF1951
MGF1951A
MGF1951A
13dBm
12GHz
MGF1951A-01
MGF1951A-01
MGF1951
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transistor NEC D 882 p
Abstract: nec d 882 p datasheet nec d 882 p nec d 882 p transistor transistor NEC D 587 IMT-2000 NES1823P-100 615t 2C156
Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MESFET NES1823P-100 100W L-BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1823P-100 is a 100 W push-pull type GaAs MESFET designed for high power transmitter applications for IMT-2000 and PCS/PCN base station systems. It is capable of delivering 100 watts of output power with high linear
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NES1823P-100
NES1823P-100
IMT-2000
transistor NEC D 882 p
nec d 882 p datasheet
nec d 882 p
nec d 882 p transistor
transistor NEC D 587
615t
2C156
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k MESFET S parameter
Abstract: MGF1953A MGF1953A-01 mesfet fet
Text: MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1953A PRELIMINARY Medium Power Microwave MESFET DESCRIPTION The MGF1953A is a 100mW MESFET for S- to Ku-band driver amplifiers and oscillators. Its lead-less ceramic package assures minimum parasitics. FEATURES • High Gain and High Output Power
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MGF1953A
MGF1953A
100mW
20dBm
12GHz
MGF1953A-01
Ga107
k MESFET S parameter
MGF1953A-01
mesfet fet
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k MESFET S parameter
Abstract: MGF1952A-01 MGF1952A
Text: MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1952A PRELIMINARY Medium Power Microwave MESFET DESCRIPTION The MGF1952A is a 50mW MESFET for S- to Ku-band driver amplifiers and oscillators. Its lead-less ceramic package assures minimum parasitics. FEATURES • High Gain and High Output Power
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MGF1952A
MGF1952A
17dBm
12GHz
MGF1952A-01
k MESFET S parameter
MGF1952A-01
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MGF1954A-01
Abstract: k MESFET S parameter MGF1954A
Text: MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1954A PRELIMINARY Medium Power Microwave MESFET DESCRIPTION The MGF1954A is a 200mW MESFET for S- to Ku-band driver amplifiers and oscillators. Its lead-less ceramic package assures minimum parasitics. FEATURES • High Gain and High Output Power
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MGF1954A
MGF1954A
200mW
23dBm
12GHz
MGF1954A-01
MGF1954A-01
k MESFET S parameter
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HP07
Abstract: SAS 250
Text: HP07 0.7µ µm High Power Process Power MESFET technology Description - MESFET technology - 0.7µm gate length - Implanted active layer - 3" wafer - Spiral inductors, MIM capacitors, TaN resistors, GaAs resistors - Via-holes Main Features þ Transition frequency: 15 GHz
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DSHP077014
HP07
SAS 250
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NE6500379A
Abstract: NE6500379A-T1
Text: DATA SHEET N-CHANNEL GaAs MES FET NE6500379A 3W L, S-BAND POWER GaAs MESFET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power CW with high
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NE6500379A
NE6500379A
NE6500379A-T1
NE6500379A-T1
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C-Band Power GaAs FET HEMT Chips
Abstract: CMC 707 7 transistor solid state x-band s-parameter transistor RF TRANSISTOR 1.5 GHZ dual gate microwave fet IC MMIC X-band amplifier HEMT MMIC POWER AMPLIFIER Three MMIC Solution for an X-band RF Front End multilayer lithography ic fabrication GaAs FET HEMT Chips
Text: KU-BAND MMIC POWER AMPLIFIERS DEVELOPED USING MSAG MESFET TECHNOLOGY T his article presents the design approach and test results of 1, 1.5, 2 and 5 W, Kuband MMIC power amplifiers developed using the high performance MSAG MESFET technology. Both single-ended and
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GaAs MESFET
Abstract: NES2527B-30 MESFET NE6500278 NEL2000 NES1821B-50 NEZ1011 NEZ1414 NEZ5964
Text: Power NEW! NES2527B-30 GaAs MESFET • 30 Watts POUT, 13.0 dB Gain • 2.1–2.7GHz Wideband Operation PCS and Cellular Base Station NEW! NES1821B-50 GaAs MESFET Wireless Local Loop and Wireless Cable MMDS • 47.0 dBm POUT @ 1.9GHz • 11.0 dB Linear Gain
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NES2527B-30
NES1821B-50
NE6500278
33dBm
NE650
NEL2000
NEZ5964
NE850
GaAs MESFET
MESFET
NEZ1011
NEZ1414
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610-150
Abstract: nec d 1590 NES1821P-50
Text: DATA SHEET N-CHANNEL GaAs MES FET NES1821P-50 50 W L-BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1821P-50 is a 50 W push-pull type GaAs MESFET designed for high power transmitter applications for PCS, DCS and PHS base station systems. It is capable of delivering 50 watts of output power CW with high linear
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NES1821P-50
NES1821P-50
610-150
nec d 1590
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D1010
Abstract: pspice model gate driver
Text: Production Process TQHiP Power MESFET Foundry Service Features Air Bridge - 4um • • Metal 1 Metal 1 – 2 um NiCr MIM Metal Metal 0 N+ N+ Isolation Implant N-/P- Channel D MESFET MIM Capacitor • • • • NiCr Resistor Semi-Insulating GaAs Substrate
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TQTRX
Abstract: TQ5M31 TQ3M31 79GHz 121GHz mesfet
Text: Production Process TQTRx GaAs MESFET Foundry Service Features Metal 2 - 4um Metal 2 • Dielectric Metal 1 • Dielectric Metal 1 - 2um Metal 1 • Dielectric NiCr MIM Metal Metal 0 N+ N+ Isolation Implant N-/P- Channel E,D,G MESFET NiCr Resistor MIM Capacitor
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nec k 813
Abstract: NES1821P-30
Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES1821P-30 30 W L-S BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1821P-30 is a 30 W push-pull type GaAs MESFET designed for high power transmitter applications for PCS, DCS and PHS base station systems. It is capable of delivering 30 watts of output power CW with high linear
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NES1821P-30
NES1821P-30
nec k 813
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4.1 amplifier circuit diagram
Abstract: class A push pull power amplifier AC 5018 class B push pull power amplifier mesfet datasheet by motorola pn junction diode ideality factor alarm clock sweep function ic dxp 15 philips ic clock alarm 28 pins STANDARD PIN DETAILS OF 2N3904 NPN TRANSISTOR
Text: 19-3985; Rev 1; 3/07 Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A
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MAX11014/MAX11015
MAX11014
MAX11015
625mV
transistors56L
MAX11014/MAX11015
4.1 amplifier circuit diagram
class A push pull power amplifier
AC 5018
class B push pull power amplifier
mesfet datasheet by motorola
pn junction diode ideality factor
alarm clock sweep function ic
dxp 15
philips ic clock alarm 28 pins
STANDARD PIN DETAILS OF 2N3904 NPN TRANSISTOR
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2N3904
Abstract: MAX11014 MAX11014BGTM MAX11015 MAX11015BGTM
Text: 19-3985; Rev 1; 3/07 Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A
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MAX11014/MAX11015
MAX11014
MAX11015
625mV
transistors56L
MAX11014/MAX11015
2N3904
MAX11014BGTM
MAX11015BGTM
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Untitled
Abstract: No abstract text available
Text: 19-3985; Rev 0; 2/06 Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A
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MAX11014/MAX11015
MAX11014
MAX11015
625mV
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2N3904
Abstract: MAX11014 MAX11014BGTM MAX11015 MAX11015BGTM 55236 mesfet
Text: 19-3985; Rev 1; 3/07 Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A
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MAX11014/MAX11015
MAX11014
MAX11015
625mV
MAX11014/MAX11015
2N3904
MAX11014BGTM
MAX11015BGTM
55236
mesfet
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MES FET NES1821P-30 30 W L-S BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1821P-30 is a 30 W push-pull type GaAs MESFET designed for high power transmitter applications for PCS, DCS and PHS base station systems. It
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NES1821P-30
NES1821P-30
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ N-CHANNEL GaAs MES FET NE6500379A 3W L, S-BAND POWER GaAs MESFET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power CW with high
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NE6500379A
NE6500379A
NE6500379A-T1
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Ablebond 36-2
Abstract: Multicore Solders
Text: MTLS LTD ^ T - 3 /- A 5 " Three Five Product Information GaAs MESFET P35-1105 This New Generation MESFET has been designed for improved performance and is ideally suited for: Applications • Low noise amplifiers 12GHz • Tube drive amplifiers • Low noise oscillators
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P35-1105
12GHz
P35-1105-0
Ablebond 36-2
Multicore Solders
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nec 0882
Abstract: NEC 1601 fet nec 0882 p
Text: DATA SHEET_ N-CHANNEL GaAs MES FET NES1821P-50 50 W L-BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1821P-50 is a 50 W. push-pull type GaAs MESFET designed forhigh power transmitter applications for PCS, DCS and PHS base station systems. It Is capable of delivering 50 watts of output power CW with high linear
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NES1821P-50
NES1821P-50
nec 0882
NEC 1601 fet
nec 0882 p
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Untitled
Abstract: No abstract text available
Text: •'.ONI HTLS LTD ES 3?hûS01 DOOÜGTl S 16ML PLESSEY T-3>- A5" Three Five Product Information GaAs Dual Gate MESFET P 35-1310 The versatile dual gate MESFET has been designed for improved performance and is ideally suited for: Applications • Automatic gain control
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62095
Abstract: No abstract text available
Text: DATA SHEET_ N-CHANNEL GaAs MESFET NEZ1011-8E, NEZ1414-8E 8W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-8E and NEZ1414-8E are.power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal'input and output matching enables guaranteed performance to be achieved with
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NEZ1011-8E,
NEZ1414-8E
NEZ1011-8E
NEZ1414-8E
62095
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