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Diodes Incorporated FNE850004Q Clock SAW Oscillator SEAM7050 T&R 1K - Tape and Reel (Alt: FNE850004Q)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	FNE850004Q	Reel			1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Diodes Incorporated FNE850004 Clock SAW Oscillator SEAM7050 T&R 1K - Tape and Reel (Alt: FNE850004)
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Avnet Americas	FNE850004	Reel			1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Diodes Incorporated FNE850001 Clock SAW Oscillator SEAM7050 T&R 1K - Tape and Reel (Alt: FNE850001)
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Avnet Americas	FNE850001	Reel		12 Weeks	1,000	1 - 10 - 100 - 1000 $2.59994 10000 $1.79882	Buy Now
Mouser Electronics	FNE850001					1 - 10 - 100 - 1000 $2.2 10000 $2.2	Get Quote
NEC Electronics Group NE8500295-8 RF POWER FIELD-EFFECT TRANSISTOR, 1-ELEMENT, C BAND, GALLIUM ARSENIDE, N-CHANNEL, METAL SEMICONDUCTOR FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	NE8500295-8		60			1 $20 10 $20 100 $12 1000 $12 10000 $12	Buy Now
NEC Electronics Group NE8500200 IN STOCK SHIP TODAY
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Component Electronics, Inc	NE8500200		57			1 - 10 - 100 - 1000 - 10000 -	Buy Now

NE850 Datasheets (32)

Part	Manufacturer	Description	Datasheet Type	PDF
NE85001	NEC	Semiconductor Selection Guide 1995	Original	PDF
NE85001	NEC	1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET	Original	PDF
NE8500100	NEC	1 W C-Band Power GaAs FET N-Channel GaAs MES FET	Original	PDF
NE8500100	NEC	C-BAND MEDIUM POWER GaAs MESFET	Original	PDF
NE8500100-AZ	NEC	FET Transistor: 1W C-BAND POWER GaAs FET: N-CHANNEL GaAs MESFET	Original	PDF
NE8500100-RG	NEC	1 W C-Band Power GaAs FET N-Channel GaAs MES FET	Original	PDF
NE8500100-RG-AZ	NEC	FET Transistor: 1W C-BAND POWER GaAs FET: N-CHANNEL GaAs MESFET	Original	PDF
NE8500100-WB	NEC	1 W C-Band Power GaAs FET N-Channel GaAs MES FET	Original	PDF
NE8500100-WB-AZ	NEC	FET Transistor: 1W C-BAND POWER GaAs FET: N-CHANNEL GaAs MESFET	Original	PDF
NE8500199	NEC	Semiconductor Selection Guide	Original	PDF
NE8500199	NEC	1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET	Original	PDF
NE8500199-AZ	NEC	FET Transistor: 1W C-BAND POWER GaAs FET: N-CHANNEL GaAs MESFET	Original	PDF
NE85002	NEC	2 WATT C-BAND POWER GaAs MESFET	Original	PDF
NE85002	NEC	Semiconductor Selection Guide 1995	Original	PDF

NE85002	NEC	2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET	Original	PDF
NE8500200	NEC	2 W C-Band Power GaAs FET N-Channel GaAs MES FET	Original	PDF
NE8500200-AZ	NEC	FET Transistor: 2W C-BAND POWER GaAs FET: N-CHANNEL GaAs MESFET	Original	PDF
NE8500200-RG	NEC	2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET	Original	PDF
NE8500200-RG-AZ	NEC	FET Transistor: 2W C-BAND POWER GaAs FET: N-CHANNEL GaAs MESFET	Original	PDF
NE8500200-WB	NEC	2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET	Original	PDF

NE850 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
UM 3842 Abstract: NE8500100 NE8500199 76600 FS S12 2 23178 Text: PRELIMINARY DATA SHEET C-BAND MEDIUM POWER GaAs MESFET NE8500100 NE8500199 ABSOLUTE MAXIMUM RATINGS1 FEATURES TC = 25 °C unless otherwise noted • HIGH OUTPUT POWER: 1 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 9.0 dB VDS Drain to Source Voltage	Original	PDF	NE8500100 NE8500199 24-Hour UM 3842 NE8500100 NE8500199 76600 FS S12 2 23178
NE8500100 Abstract: NE8500199 UM 3842 7486 gate Text: C-BAND MEDIUM POWER GaAs MESFET NE8500100 NE8500199 ABSOLUTE MAXIMUM RATINGS1 FEATURES TC = 25 °C unless otherwise noted • HIGH OUTPUT POWER: 1 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 9.0 dB VDS Drain to Source Voltage • HIGH EFFICIENCY: 37% (PAE)	Original	PDF	NE8500100 NE8500199 24-Hour NE8500100 NE8500199 UM 3842 7486 gate
Nec K 872 Abstract: NE85001 NE8500100 NE8500100-RG NE8500100-WB NE8500199 Text: PRELIMINARY DATA SHEET GaAs MES FET NE85001 SERIES 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. NE8500100 is the two-cells recessed gate chip used in ‘99’ package.	Original	PDF	NE85001 NE8500199 NE8500100 NE8500100 Nec K 872 NE8500100-RG NE8500100-WB
NEC k 3654 Abstract: gl 7445 nec k 813 NE850R599A nec 8725 gm 8562 5942 A 7601 0549 Text: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device	Original	PDF	NE850R599A NE850R599A CODE-99 NEC k 3654 gl 7445 nec k 813 nec 8725 gm 8562 5942 A 7601 0549
NE9004 Abstract: NE850R5 9002 NE85001 NE9000 NE9001 ne900 Text: Typical Linear Gain vs. Frequency Unmatched Driver Devices 24.0 Linear Gain dB 21.0 NE850R5 18.0 NE9001/9002 NE9000 15.0 12.0 NE1280 NE85001 9.0 6.0 NE9004 3.0 0.3 10.0 1.0 30.0 Frequency (GHz) EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS	Original	PDF	NE850R5 NE9001/9002 NE9000 NE1280 NE85001 NE9004 24-Hour NE9004 NE850R5 9002 NE85001 NE9000 NE9001 ne900
NE8500100 Abstract: NE850R599 Text: PRELIMINARY DATA SHEET C-BAND MEDIUM POWER GaAs MESFET NE850R599 ABSOLUTE MAXIMUM RATINGS1 FEATURES TC= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 0.5 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 9.5 dB VDSX Drain to Source Voltage	Original	PDF	NE850R599 NE850R599 24-Hour NE8500100
Untitled Abstract: No abstract text available Text: 2 WATT C-BAND POWER GaAs MESFET FEATURES NE85002 SERIES SELECTION CHART TYPICAL PERFORMANCE FREQUENCY GL RANGE dBm (GHz) (dB) • CLASS A OPERATION PART NUMBER • HIGH EFFICIENCY: ηADD ≥ 39% TYP POUT • BROADBAND CAPABILITY • PACKAGE OPTIONS: Chip	Original	PDF	NE8500200 NE8500295-4 NE8500295-6 NE8500295-8 NE85002 NE8500295 24-Hour
80500 TRANSISTOR Abstract: 0-647-55 AN-1001 NE85002 NE8500200 NE8500295 NE8500295-4 NE8500295-6 NE8500295-8 circulator 0.325 GHz Text: 2 WATT C-BAND POWER GaAs MESFET FEATURES NE85002 SERIES SELECTION CHART TYPICAL PERFORMANCE FREQUENCY GL RANGE dBm (GHz) (dB) • CLASS A OPERATION PART NUMBER • HIGH EFFICIENCY: ηADD ≥ 39% TYP POUT • BROADBAND CAPABILITY • PACKAGE OPTIONS: Chip	Original	PDF	NE85002 NE8500200 NE8500295-6 NE8500295-8 NE8500295-4 NE8500295 80500 TRANSISTOR 0-647-55 AN-1001 NE85002 NE8500200 NE8500295-4 NE8500295-6 NE8500295-8 circulator 0.325 GHz
80500 TRANSISTOR Abstract: AN-1001 NE85002 NE8500200 NE8500295 NE8500295-4 NE8500295-6 NE8500295-8 Text: NE85002 SERIES 2 WATT C-BAND POWER GaAs MESFET FEATURES SELECTION CHART TYPICAL PERFORMANCE FREQUENCY GL RANGE dBm (GHz) (dB) • CLASS A OPERATION PART NUMBER • HIGH EFFICIENCY: ηADD ≥ 39% TYP POUT • BROADBAND CAPABILITY • PACKAGE OPTIONS: Chip	Original	PDF	NE85002 NE8500200 NE8500295-6 NE8500295-8 NE8500295-4 NE8500295 AN-1001 24-Hour 80500 TRANSISTOR NE85002 NE8500200 NE8500295-4 NE8500295-6 NE8500295-8
nec microwave Abstract: MESFET NE850R599A NEC Microwave Semiconductors NE8500100 Text: C-BAND MEDIUM POWER GaAs MESFET NE850R599A OUTLINE DIMENSIONS Units in mm FEATURES • HIGH OUTPUT POWER: 0.5 W PACKAGE OUTLINE 99 • HIGH LINEAR GAIN: 9.5 dB 5.2±0.3 • HIGH EFFICIENCY (PAE): 38% 1.0±0.1 • SUPERIOR INTERMODULATION DISTORTION 4.0 MIN BOTH LEADS	Original	PDF	NE850R599A NE850R599A NE8500100 24-Hour nec microwave MESFET NEC Microwave Semiconductors
NE85002 Abstract: NE8500200 NE8500200-RG NE8500200-WB NE8500295 NE8500295-4 NE8500295-6 NE8500295-8 Text: PRELIMINARY DATA SHEET GaAs MES FET NE85002 SERIES 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped element matching network.	Original	PDF	NE85002 NE8500295 NE8500200 NE8500200 NE8500200-RG NE8500200-WB NE8500295-4 NE8500295-6 NE8500295-8
80500 TRANSISTOR Abstract: No abstract text available Text: 2 WATT C-BAND POWER GaAs MESFET FEATURES • NE85002 SERIES SELECTION CHART T Y P IC A L P E R F O R M A N C E CLASS A OPERATION • HIGH EFFICIENCY: • BROADBAND CAPABILITY T\|ADD > 3 9 % PA RT NUM B ER TYP FR E Q U E N C Y RANGE G H z Po ut (dB m ) N E 8500200	OCR Scan	PDF	NE85002 NE8500295 AN-1001 80500 TRANSISTOR
NEC 1357 Abstract: Nec K 872 Text: PRELIMINARY DATA SHEET GaAs MES FET NE85001 SERIES 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. NE8500100 is the two-cells recessed gate chip used in ‘99’ package.	OCR Scan	PDF	NE85001 NE8500199 NE8500100 NE8500100 NEC 1357 Nec K 872
Untitled Abstract: No abstract text available Text: PRELIMINARY DATASHEET C-BAND MEDIUM POWER GaAs MESFET NE8500100 NE8500199 ABSOLUTE MAXIMUM RATINGS1 FEATURES_ Tc = 25 °C unless otherwise noted • HIGH OUTPUT POWER: 1 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 9.0 dB V ds	OCR Scan	PDF	NE8500100 NE8500199 NE8500100 TheNE8500199isamedium fo658 IS12I IS111 IS22I2 IS12S21I

nec d 1590 Abstract: No abstract text available Text: PRELIMINARY DATA SHEET GaAs MES FET NE85002 SERIES 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped elem ent matching network.	OCR Scan	PDF	NE85002 NE8500295 NE8500200 CODE-95 nec d 1590
80500 TRANSISTOR Abstract: J1186 J56-1 J-2-502 Text: NEC 2 WATT C-B AN D POWER GaAs MESFET FEATURES NE85002 SERIES SELECTION CHART • CLASS A OPERATION • HIGH EFFICIENCY: ^ add 2 39% TYP • BROADBAND CAPABILITY • PACKAGE OPTIONS: TYPICAL PERFORMANCE FREQUENCY G l RANGE dBm (GHz) (dB) PART NUMBER P out	OCR Scan	PDF	NE8500200 NE8500295-4 NE8500295-6 NE8500295-8 NE85002 NE8500295 24-Hour 80500 TRANSISTOR J1186 J56-1 J-2-502
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET GaAs MES FET NE85001 SERIES 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET D E S C R IP T IO N The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. NE8500100 is the two-cells recessed gate chip used in ‘99’ package.	OCR Scan	PDF	NE85001 NE8500199 NE8500100
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET GaAs MES FET NE85002 SERIES 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET D E S C R IP T IO N The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped element matching network.	OCR Scan	PDF	NE85002 NE8500295 NE8500200
NEC Microwave Semiconductors Abstract: No abstract text available Text: PRELIMINARY DATA SHEET C-BAND MEDIUM POWER GaAs MESFET NE850R599A FEATURES_ OUTLINE DIMENSIONS • HIGH O U T P U T POW ER: 0.5 W Units in mm PACKAGE OUTLINE 99 • HIGH LINEAR GAIN: 9.5 dB • HIG H EFFICIENC Y (PAE): 38% • SU PER IO R IN TER M O D U LA TIO N DISTORTIO N	OCR Scan	PDF	NE850R599A E850R599A NE8500100 NE850R599A NEC Microwave Semiconductors
Untitled Abstract: No abstract text available Text: PRELIMINARY NE85002 SERIES 2 WATT C-BAND POWER GaAs MESFET FEATURES • SELECTION CHART • HIGH EFFICIENCY: r ADD > 3 5 % T Y P • BROADBAND CAPABILITY • TYPICAL PERFORMANCE CLASS A OPERATION PACKAGE OPTIONS: Chip Herm etic Package • PARTIALLY MATCHED INPUT FOR PACKAGED	OCR Scan	PDF	NE8500200 NE8500295-4 NE8500295-6 NE8500295-8 NE85002 AN-1001
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET C-BAND MEDIUM POWER GaAs MESFET NE8500100 NE8500199 FEATURES_ ABSOLUTE MAXIMUM RATINGS1 Tc = 25 °C unless otherwise noted • HIGH OUTPUT POWER: 1 W SYMBOLS • HIGH LINEAR GAIN: 9.0 dB PARAMETERS UNITS RATINGS	OCR Scan	PDF	NE8500100 NE8500199 NE8500100 NE8500199 IS12I JIS12I IS2212 IS12S21I
NE850R5 Abstract: No abstract text available Text: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial am plifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device	OCR Scan	PDF	NE850R5 NE850R599 CODE-99
63000-000 Abstract: No abstract text available Text: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The N E850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device	OCR Scan	PDF	NE850R5 E850R599 CODE-99 63000-000
Untitled Abstract: No abstract text available Text: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device	OCR Scan	PDF	NE850R599A NE850R599A CODE-99

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NE850 Search Results

NE850 Price and Stock

Diodes Incorporated FNE850004Q

Diodes Incorporated FNE850004

Diodes Incorporated FNE850001

NEC Electronics Group NE8500295-8

NEC Electronics Group NE8500200

NE850 Datasheets (32)

NE850 Datasheets Context Search

UM 3842

NE8500100

Nec K 872

NEC k 3654

NE9004

NE8500100

Untitled

80500 TRANSISTOR

80500 TRANSISTOR

nec microwave

NE85002

80500 TRANSISTOR

NEC 1357

Untitled

nec d 1590

80500 TRANSISTOR

Untitled

Untitled

NEC Microwave Semiconductors

Untitled

Untitled

NE850R5

63000-000

Untitled