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    TN2905A

    Abstract: PN2907A
    Text: TN2905A Discrete P O W E R & S ig n a l Technologies National Semiconductor"' TN2905A PNP General Purpose Amplifier T h is d e v ic e is d e s ig n e d fo r u s e a s a g e n e ra l purp o se am p lifie r a n d sw itch requiring colle cto r c u rren ts to 5 0 0 m A , S o u rc e d from


    OCR Scan     		PDF TN2905A PN2907A L5D1130 004DbES TN2905A

    ic 5218 a

    Abstract: LPKL D44H8 NZT44H8 4A04I SOED100 5219 5V REGULATOR
    Text: D44H8 I NZT44H8 & Discrete PO W ER & S ig n a l Technologies National S e m i c o n d it c I o r ” D44H8 NZT44H8 NPN Power Amplifier This device is designed for power amplifier, regulator and switching circuits where speed Is important. Sourced from Process 4Q .


    OCR Scan     		PDF D44H8 NZT44H8 O-220 L5D1130 ic 5218 a LPKL NZT44H8 4A04I SOED100 5219 5V REGULATOR

    NDB6050

    Abstract: NDP6050 js35
    Text: Na t i o n a l March 1996 Semiconductor" N DP6050/ NDB6050 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDP6050/ NDB6050 L5D113D bSD113D NDP6050 js35

    797L

    Abstract: NDS9952A 0040027
    Text: May 1996 N ational f i Semiconductor" NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor Features General Description These dual N- and P-channel enhancement mode power field effect transistors are produced using National’s proprietary, high cell density, DMOS


    OCR Scan     		PDF NDS9952A bSD1130 b501130 00400Eci 797L NDS9952A 0040027

    DIODE T50

    Abstract: MMBD7000 mmbd1201 MA670
    Text: MMBD7000 & Discrete POW ER & Signal Technologies National Semiconductor’ MMBD7000 High Conductance Ultra Fast Diode Sourced from P roce ss 1P. Se e MMBD1201-1205 for characteristics. Absolute Maximum Ratings* Symbol ta^scum essotnemisenoted Parameter Units


    OCR Scan     		PDF MMBD7000 MMBD1201-1205 L5D1130 004G5A1 0040Sfl2 DIODE T50 MMBD7000 mmbd1201 MA670

    NDS8928

    Abstract: ab-5 national
    Text: National Semiconductor July 1996 ” NDS8928 Dual N & P-Channel Enhancement Mode Field Effect Transistor Features General Description These dual N- and P-Channel enhancem ent m ode p ow er fie ld effect tran sisto rs are produced using N ational's pro p rie ta ry, h ig h cell density, DMOS


    OCR Scan     		PDF NDS8928 b5D113D bSD113D NDS8928 ab-5 national