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    TP20N20E

    Abstract: IRF640
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF640 Pow er Field Effect Transistor IM-Channel Enhancem ent-Mode Silicon Gate This T M O S Power FET is designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid


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    PDF IRF640 21A-06 O-220AB) RATINGS22 L3li7254 D2732 TP20N20E IRF640