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    KI130 Search Results

    KI130 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KI1302DL Kexin N-Channel 30V MOSFET Original PDF
    KI1302DL TY Semiconductor N-Channel 30V MOSFET - SOT-323 Original PDF
    KI1303EDL Kexin P-Channel MOSFET Original PDF
    KI1304BDL Kexin N-Channel 30V MOSFET Original PDF
    KI1304BDL TY Semiconductor N-Channel 30V MOSFET - SOT-323 Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: Transistors IC MOSFET SMD Type Product specification KI1302DL Features 1 Gate 2 Source 3 Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-source voltage VDS Gate-source voltage VGS Continuous drain current TJ = 150 TA=25 -TA=70 ID Pulsed drain current


    Original     		PDF KI1302DL

    transistor smd marking KA

    Abstract: smd transistor marking 26 MOSFET marking smd Marking KA ic MARKING QG smd diode marking 6a SMD IC MARKING NC MARKING QG smd marking 24 smd transistor 26
    Text: Transistors IC SMD Type N-Channel 30-V D-S MOSFET KI1302DL Features 1 Gate 2 Source 3 Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-source voltage VDS Gate-source voltage VGS Continuous drain current (TJ = 150 ) TA=25 -TA=70 ID Pulsed drain current


    Original     		PDF KI1302DL transistor smd marking KA smd transistor marking 26 MOSFET marking smd Marking KA ic MARKING QG smd diode marking 6a SMD IC MARKING NC MARKING QG smd marking 24 smd transistor 26

    mosfet marking kf

    Abstract: ic MARKING QG Marking Symbol KF KI1304BDL smd marking TB
    Text: Transistors IC SMD Type N-Channel 30-V D-S MOSFET KI1304BDL Features TrenchFET Power MOSFET 100% Rg Tested 1 Gate 2 Source 3 Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VDS 30 V Drain-source voltage Gate-source voltage 12 V ID 0.90


    Original     		PDF KI1304BDL mosfet marking kf ic MARKING QG Marking Symbol KF KI1304BDL smd marking TB

    ld smd transistor

    Abstract: smd marking LD ic MARKING QG smd transistor marking 54 KI1303EDL MOSFET marking smd SMD IC MARKING NC smd transistor 1A 9 SMD Transistor nc
    Text: Transistors IC SMD Type P-Channel 2.5-V G-S MOSFET KI1303EDL Features 1 Gate 2 Source 3 Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-source voltage Gate-source voltage 5 secs Steady State VDS -20 VGS 12 Continuous drain current (TJ = 150 ) TA=25


    Original     		PDF KI1303EDL ld smd transistor smd marking LD ic MARKING QG smd transistor marking 54 KI1303EDL MOSFET marking smd SMD IC MARKING NC smd transistor 1A 9 SMD Transistor nc

    ID09

    Abstract: No abstract text available
    Text: Transistors IC MOSFET SMD Type Product specification KI1304BDL Features TrenchFET Power MOSFET 100% Rg Tested 1 Gate 2 Source 3 Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VDS 30 V Drain-source voltage Gate-source voltage 12 V ID 0.90


    Original     		PDF KI1304BDL ID09

    mn102

    Abstract: CF19 panasonic mark AT0 md1x t17c b.a datae sheet of ku EW23 in6 16a TM21DP mn10200
    Text: MICROCOMPUTER MN102H00 MN1021617/F1617 LSI User's Manual Pub.No.22317-041E PanaXSeries is a trademark of Matsushita Electric Industrial Co., Ltd. The other corporation names, logotypes and product names written in this manual are trademarks or registered trademarks


    Original     		PDF MN102H00 MN1021617/F1617 22317-041E MN102F1617 mn102 CF19 panasonic mark AT0 md1x t17c b.a datae sheet of ku EW23 in6 16a TM21DP mn10200

    1HT251

    Abstract: 2T203 kt117 1T308 2T355A 2T312 IT308B K1HT251 kt117b 2T313
    Text: WmmËÊÊm W h A iW f W * i r*ïS >*••> ro s ît. ;<W«a 7 mm m$m 15ÎÏ3 Sktófefc?¿feS 11181 immm SI f ' ■ ' ' ' : m S ËÊB B S M M CnPABOHHMK nonynpoBQQHHKOBbiE nPHBOPbl TPAH3MCTOPbl MAflOI/ì MOLUHOCTM n O f l PEA A K L4H EPÌ A . B rO flO M E A O B A


    OCR Scan     		PDF FojO33 KT357 KT358 KT361 KT363 KT364-2 KT366 KT368 KT369 KT369-1 1HT251 2T203 kt117 1T308 2T355A 2T312 IT308B K1HT251 kt117b 2T313

    2T908A

    Abstract: 2T602 2T907A KT604 1HT251 1T813 2t903 KT920A PO6 115.05 KT117
    Text: nojiyriPOBOflHHKOBblE nPHBOPbl: TpaH3HCTOpbI CnpaBOHHHK rioa oGmea peaaKUHen H. H. TOPIOHOBA EB MOCKBA 3HEPrOATOMH3AAT 1983 BEK 32.852 n 53 y ^ K . 621.282.3 035 P e n e H 3 e H T b i : E. 14. KpbiJioB, B. B. I1aB;ioB AB T o p b i : B. Jl. ApoHOB, A. B. E bkikob, A. A. 3aiineB,


    OCR Scan     		PDF T-0574D. 30Eiaa Coi03nojiH 2T908A 2T602 2T907A KT604 1HT251 1T813 2t903 KT920A PO6 115.05 KT117

    KC156A

    Abstract: ky202e K174XA2 KT809A KT805A KT610B KP350A KT808a KT920A KC213
    Text: BJOJIABPHHEHKO CnPABOMHMK n o n o jiy nPOBOAHMKOBBIM nPMBOPAM H 3A aH ne 1 0 -e, nepepaöoT aH H oe KHEB «TEXHIKA* h flo n o jiH e H H o e 32.852 h2 J113 JlaBpnMenKO B. 10. J113 CnpaBOMHHK no noJiynpoBOAHHKOBbiM npnöopaM. 10-e m a., nepepaô. h A on.— K.: TexHiKa, 1984.— 424 c., hji.— BHÓjniorp.:


    OCR Scan     		PDF XapfaKOB-57, KC156A ky202e K174XA2 KT809A KT805A KT610B KP350A KT808a KT920A KC213

    KN303

    Abstract: n306a APM 2510 2SF100 C12S Scans-048 apm 2510 n KF190 silicium power transistor broadcas amplifier
    Text: nOAEBblE TPAH3HCTOPBI FIELD-EFFECT TRANSISTORS FELDEFFEKTTRANSISTOR EN TRANSISTORS A EFFET DE CHAMP IST 2 riEPEHEHb TPAH3MCTOPOB LIST OF TRANSISTORS TRANSISTORENLISTE LISTE DE TRANSISTORS Grp. Page Knioir-KmoiE 11 Kni03E-Kni03M Kni03EP-KTI103MP 15 KriC104A-KnC104XI .


    OCR Scan     		PDF KriC104A-KnC104XI KnC202A-KnC20 -Kn202E Kni03E-Kni03M Kni03EP-KTI103MP Kn201E-Kn201/l Kn301B Kn302A-Kn302r. Kn303A-Kn303H Kn304A. KN303 n306a APM 2510 2SF100 C12S Scans-048 apm 2510 n KF190 silicium power transistor broadcas amplifier