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Samsung Semiconductor K4S561633C-RL75
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	K4S561633C-RL75		441		1	1 $8.96 10 $4.48 100 $3.8824 1000 $3.6736 10000 $3.6736	Buy Now
Quest Components	K4S561633C-RL75		188			1 $12 10 $12 100 $5.2 1000 $5.2 10000 $5.2	Buy Now
Samsung Semiconductor K4S561633C-RN1L
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Bristol Electronics	K4S561633C-RN1L		357			1 - 10 - 100 - 1000 - 10000 -	Get Quote

K4S561633C Datasheets (9)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
K4S561633C		Samsung Electronics	K4S561633C-RL(N) 4M x 16-Bit x 4 Banks Synchronous DRAM in 54CSP Organization = 16Mx16 Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 Temperature = L,n,p Current(Icc1/Icc6) = 85mA/800uA Speed = 1L,1H,75 Mobile Function = no Package = 54CSP Production Status		Original	PDF
K4S561633C-N		Samsung Electronics	16Mx16 SDRAM 54CSP		Original	PDF
K4S561633C-P1H		Samsung Electronics	16Mx16 SDRAM 54CSP		Original	PDF
K4S561633C-P1L		Samsung Electronics	16Mx16 SDRAM 54CSP		Original	PDF
K4S561633C-P75		Samsung Electronics	16Mx16 SDRAM 54CSP		Original	PDF
K4S561633C-RBL		Samsung Electronics	16Mx16 SDRAM 54CSP		Original	PDF
K4S561633C-RL		Samsung Electronics	16Mx16 SDRAM 54CSP		Original	PDF
K4S561633C-RL75		Samsung Electronics	IC,SDRAM,4X4MX16,CMOS,BGA,54PIN,PLASTIC		Original	PDF
K4S561633C-RL(N)		Samsung Electronics	4M x 16-Bit x 4 Banks Synchronous DRAM in 54CSP Data Sheet		Original	PDF

K4S561633C Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
K4S561633C Abstract: No abstract text available Text: K4S561633C-R B L/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S561633C-R(B)L/N/P CMOS SDRAM 4M x 16Bit x 4 Banks Synchronous DRAM in 54CSP FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply.	Original	PDF	K4S561633C-R 16Mx16 54CSP 16Bit K4S561633C
K4S561633C Abstract: K4S561633C-RL Text: K4S561633C-RL N CMOS SDRAM 16Mx16 SDRAM 54CSP (V DD/V DDQ 3.0V/3.0V & 3.3V/3.3V) Revision 0.7 December 2001 Rev. 0.7 Dec. 2001 K4S561633C-RL(N) CMOS SDRAM Revision History Revision 0.0 (April 4. 2001, Target) • First generation of 256Mb Low Power SDRAM without special function(V DD 3.0V, VDDQ 3.0V).	Original	PDF	K4S561633C-RL 16Mx16 54CSP 256Mb K4S561633C
K4S561633C-RLN Abstract: No abstract text available Text: K4S561633C-RL N CMOS SDRAM 16Mx16 SDRAM 54CSP (V DD/V DDQ 3.0V/3.0V & 3.3V/3.3V) Revision 1.0 February 2001 Rev. 1.0 Feb. 2002 K4S561633C-RL(N) CMOS SDRAM Revision History Revision 0.0 (April 4. 2001, Target) • First generation of 256Mb Low Power SDRAM without special function(V DD 3.0V, VDDQ 3.0V).	Original	PDF	K4S561633C-RL 16Mx16 54CSP 256Mb K4S561633C-RLN
Untitled Abstract: No abstract text available Text: Preliminary K4S561633C-RL N CMOS SDRAM 16Mx16 SDRAM 54CSP (V DD/V DDQ 3.0V/3.0V & 3.3V/3.3V) Revision 0.6 November 2001 Rev. 0.6 Oct. 2001 Preliminary K4S561633C-RL(N) CMOS SDRAM Revision History Revision 0.0 (April 4. 2001, Target) • First generation of 256Mb Low Power SDRAM without special function(V DD 3.0V, VDDQ 3.0V).	Original	PDF	K4S561633C-RL 16Mx16 54CSP 256Mb 200us.