Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    JS21E Search Results

    JS21E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan     		PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    transistor npn c 6073

    Abstract: 433 SOT-23 transistor npn d 2078 944 1L2 NE68139
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fx= 8 GHz • LOW NOISE FIGURE: 1,2dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB AT 2 GHz 00 CHIP 35 (MICRO-X) 33 (SOT 23 STYLE) 39 (SOT 143 STYLE)


    OCR Scan     		PDF NE681 OT-23) transistor npn c 6073 433 SOT-23 transistor npn d 2078 944 1L2 NE68139

    2sc4857

    Abstract: 2SC4872 2sc487 2sc4856 2sc4859
    Text: I High-Performance Si Bipolartransistor fT > 5GHz Series Features High Gain, Low Noise G -III-NRP (G iga-lll-N oise Reduction Process) technology subm icron hyperfine process developed for high gain and low noise characteristics Low Power Dissipation High perform ance at low voltage and low current for low power dissipation


    OCR Scan     		PDF 2SC4853 250mm2 jS21e 2sc4857 2SC4872 2sc487 2sc4856 2sc4859