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STMicroelectronics MJE802 TRANS NPN DARL 80V 4A SOT32
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onsemi MJE802G TRANS NPN DARL 80V 4A TO126
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onsemi MJE802STU TRANS NPN DARL 80V 4A TO126-3
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DigiKey	MJE802STU	Tube			1,920	1 - 10 - 100 - 1000 - 10000 $0.15945	Buy Now
onsemi MJE802
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Bristol Electronics	MJE802		22			1 - 10 - 100 - 1000 - 10000 -	Get Quote

JE802 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
JE802 Abstract: No abstract text available Text: NPN EPITAXIAL MJE800/801/803 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 I c= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • C om plem ent to M JE700/701/702/703 ABSOLUTE MAXIMUM RATINGS Characteristic	OCR Scan	PDF	MJE800/801/803 JE700/701/702/703 MJE800/801 JE802/803 50fiA JE802
triac zd 607 Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845 Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.	OCR Scan	PDF	SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
EATON CM20A Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268 Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main	OCR Scan	PDF
JE802 Abstract: JE700 JE803 JE700 MOTOROLA JE702 JE703 JE800 75 watt npn switching transistor MJE700T Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP M JE700,T M JE702 Plastic Darlington Com plem entary Silicon Power Transistors M JE703 . . . designed lor general-purpose amplifier and low-speed switching applications. • • • High DC Current Gain — hFE = 2000 Typ @ lc = 2.0 Adc	OCR Scan	PDF	JE700 JE702 JE703 JE800 JE802 JE803 MJE700 MJE800 T0220AB, MJE700T JE803 JE700 MOTOROLA 75 watt npn switching transistor
powec rm 1110 Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor Text: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor	OCR Scan	PDF	111ii MZ5558 Z5555, Z5556, MZ5557 powec rm 1110 rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	PDF	AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
JE800 Abstract: JE702 mje800 JE700 Text: f Z 7 SCS-THOMSON ^ 7 # fifflD æ m iC T «! S_G MJ E800/1 /2/3 MJE700/1/2/3 S-TH O M S O N 3GE ]> MEDIUM POWER DARLINGTONS D ESCRIPTIO N The MJE800, MJE801, JE802 and MJE803 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are moun	OCR Scan	PDF	E800/1 MJE700/1/2/3 MJE800, MJE801, MJE802 MJE803 O-126 MJE700, MJE701, MJE702 JE800 JE702 mje800 JE700
JE370 Abstract: je243 je712 je240 je200 je253 JE703 JE350 je250 JE720 Text: Power Transistors TO-126 Case T o p View T Y P E NO. NPN PNP 2N4921 2N4918 2N4922 2N4919 2N4923 2N4920 2N5190 2N5193 2N5191 2N5194 2N5192 2N5195 2N5655 2N5656 2N5657 2N6037 2N6034 2N6038 2N6035 2N6039 2N6036 BD135 BD136 BD137 BD138 BD139 BD140 BD175 BD176	OCR Scan	PDF	O-126 2N4921 2N4922 2N4923 2N5190 2N5191 2N5192 2N5655 2N5656 2N5657 JE370 je243 je712 je240 je200 je253 JE703 JE350 je250 JE720
JE700 Abstract: MJE700 MJE701 MJE702 MJE703 MJE800 MJE801 MJE802 MJE803 JE703 Text: MJE700 thru MJE703 PNP SILICON MJE800 th,uMJE803 NPN 4.0 A M P E R E PLASTIC MEDIUM-POW ER C O M PLEM EN T A R Y SILIC O N T R A N SIST O R S . . . designed to replace discrete driver and o u tp u t stages in co m p le m entary a u d io am plifier applications.	OCR Scan	PDF	MJE700 MJE703 MJE800 MJE803 MJE701 MJE801 MJE702 MJE802 MJE803 JE700 JE703
JE350 Abstract: je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55 Text: INDUSTRY STANDARD SGS-THOMSON BD135 BD136 BD137 BD138 BD139 BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 BD140 BD159 BD160 BD165 BD166 BD167 BD159 SGS-THOMSON PAGE NEAREST BD157 BD158 2N5878 BD437 BD438 BD439 BD440 BD441 BD442 BD237 BD238 BD168	OCR Scan	PDF	BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 JE350 je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55
JE2901 Abstract: 2N6044 JE802T JE802 JE801T JE702 LM3661TL-1.40 Text: o Power Transistors T Y P E NO. NPN PNP @ ic ic PD B V C BO BVCEO A (W) (V) (V) MIN MIN MIN MAX MAX hFE (A) VCE(SAT) @ IC (V) (A) MAX fT (MHz) MIN 4.0 36 80 70 30 120 0.5 1.0 0.5 0.8 2N5296 4.0 36 60 40 30 120 1.0 1.0 1.0 0.8 2N5298 4.0 36 80 60 20 80 1.5	OCR Scan	PDF	2N5294 2N5296 2N5298 2N5490 2N5492 2N5494 2N5496 2N6043 2N6044 2N6045 JE2901 JE802T JE802 JE801T JE702 LM3661TL-1.40
MJE801 Abstract: MJE802 JE700 MJE703 je802 MJE800 MJE803 transistor mje802 TRANSISTOR JC 515 MJE701 Text: MJE700 thru MJE703 PNP SILICON MJE800 th,uMJE803 NPN 4.0 AMPERE PLASTIC MEDIUM-POW ER C O M PLEM EN T A R Y SILIC O N T R A N SIST O R S . . . designed to replace discrete driver and o u tp u t stages in co m p le m entary a u d io am plifier applications.	OCR Scan	PDF	MJE700 MJE703 MJE800 MJE803 MJE701 MJE801 MJE702 MJE802 MJE803 ISeeAN-415) JE700 je802 transistor mje802 TRANSISTOR JC 515
wiring diagram audio amplifier ic 6283 Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838 Text: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor	OCR Scan	PDF	4L3052 4L3056 wiring diagram audio amplifier ic 6283 germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	PDF	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

JE802 Abstract: MJE802 transistor tic 701 MJE800 MJE101 transistor mje802 MJE801 MJE803 MJE702 MJE703 Text: MJE700thru MJE703 PNP/MJE800 thru MJE803 NPN continued E L E C T R IC A L C H A R A C T E R IS T IC S (T q = 25°C unless otherwise noted) \| Characteristic O F F C H A R A C T E R IS T IC S Collector-Emitter Breakdown VoltageM) (1C * 50 m Adc , \ q « 0)	OCR Scan	PDF	MJE700thru MJE703 PNP/MJE800 MJE803 MJE700, MJE701, MJE800. MJE801 MJE702, MJE703, JE802 MJE802 transistor tic 701 MJE800 MJE101 transistor mje802 MJE702
JE800 Abstract: JE802 JE702 Text: SELECTION GUIDES BASED ON TECHNOLOGY AND PACKAGES EPITAXIAL BA SE N P N anc P N P typos perfect com plem entary pairs M edium V C e o range (22 to 100 V) M edium sw itching speed M edium fT (2 to 20 M H z) H igh ru gge d n e ss M onolithic Darlington capability	OCR Scan	PDF	-TO-126 BD441 BD681 JE800 JE801 JE802 JE803 2N5190 2N5191 2N5192 JE702
MJE520 Abstract: bd189 sc 6038 MJE12007 MOTOROLA 527 33A mj4647 mje13006 BD 433NPNTO-126 Je105 mps-u Text: MOTORCLA SC XSTRS/R F 12E D \| t3t?5SM aüâ4m ? T \| T -9 1 -0 1 Selection By Package Motorola power transistors are available in a wide variety of metal and plastic packages to match thermal, electrical and cost requirements. The following table com pares the basic	OCR Scan	PDF	-204AA -204AE T0-204A 97A-02 O-205AD BUS51 BUV21 BUV11 2N6249 BUX41 MJE520 bd189 sc 6038 MJE12007 MOTOROLA 527 33A mj4647 mje13006 BD 433NPNTO-126 Je105 mps-u
702 TRANSISTOR npn Abstract: MJE800 702 Z TRANSISTOR darlington transistor with built-in temperature MJE802 mje801 Text: NPN EPITAXIAL MJE800/801/803 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 I c= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • C om plem ent to M JE700/701/702/703 ABSOLUTE MAXIMUM RATINGS C haracteristic	OCR Scan	PDF	MJE800/801/803 MJE700/701/702/703 MJE800/801 MJE802/803 O-126 Characterist1/803 702 TRANSISTOR npn MJE800 702 Z TRANSISTOR darlington transistor with built-in temperature MJE802 mje801
JE800 Abstract: JE802 JE702 JE803 JE700 MOTOROLA MJE800-803 N5825 MJE700T MJE700T MJE800T Text: MOTOROLA Order this document by MJE700/D SEMICONDUCTOR TECHNICAL DATA PNP M JE700,T Plastic Darlington Com plem entary Silicon Power Transistors M JE702 M JE703 . . . designed for general-purpose amplifier and low -speed switching applications. • • •	OCR Scan	PDF	MJE700/D MJE700 MJE800 T0220AB, MJE700T MJE800T JE700 JE702 JE703 JE800 JE802 JE803 JE700 MOTOROLA MJE800-803 N5825 MJE700T MJE800T
TRANSISTOR tip122 CHN 949 Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175 Text: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.	OCR Scan	PDF	38v01 TRANSISTOR tip122 CHN 949 E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
U/25/20/TN26/15/850/yd 803 ic Abstract: BUX22M JE13005 JE802 TIP+317+data+sheet bu808df1 je200 2n5337 S13003 2N6057 Text: G E N E R A L P U R P O S E T R A N S IS T O R S TY PE ‘c V CE V CEsat 8 A (V) (V) 'o (A) 'b Rthj-c (mA) rc / w ) V CE0 V CB0 'c (V) (V) (A) 22 22 4 BD433 BD434 50 2.00 1.0 0.50 2.00 200 25 40 5 M JE200 M JE210 70 0.50 1.0 0.30 0.50 50 30 30 3 M JE520	OCR Scan	PDF	BD433 JE200 JE520 D44H1 D44H2 D44C1 D44C2 D44C3 2N6288 BD435 U/25/20/TN26/15/850/yd 803 ic BUX22M JE13005 JE802 TIP+317+data+sheet bu808df1 2n5337 S13003 2N6057

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JE802 Price and Stock

STMicroelectronics MJE802

onsemi MJE802G

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JE802 Datasheets Context Search

JE802

triac zd 607

EATON CM20A

JE802

powec rm 1110

la 4440 amplifier circuit diagram 300 watt

JE800

JE370

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JE350

JE2901

MJE801

wiring diagram audio amplifier ic 6283

2N2222A 338

JE802

JE800

MJE520

702 TRANSISTOR npn

JE800

TRANSISTOR tip122 CHN 949

U/25/20/TN26/15/850/yd 803 ic