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    IXTM80N60

    Abstract: diode c248 20n60vd
    Text: IXTH/IXTM 20N60 VDSS = 600 V lD25 = 20 A MegaMOS FET ^ D S o n " ß N-Channel Enhancement Mode Symbol Test Conditions VDSS ^ V„on Tj = 25° C to 1 50° C; RGS= Maximum Ratings =25°Cto 150°C 1 M£2 600 V 600 V v GS Continuous ±20 V v GSM Transient


    OCR Scan     		PDF 20N60 15N60 O-247 O-204 O-204 O-247 C2-50 IXTM80N60 diode c248 20n60vd