IXGH40N60A Search Results

IXGH40N60A Price and Stock

Filter by Manufacturer


IXYS Corporation IXGH40N60A IGBT 600V 75A 250W TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGH40N60A	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now

IXGH40N60A Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXGH40N60A		IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 75A 250W TO247AD		Original	PDF
IXGH40N60A		IXYS	MegaMOS IGTs - Very High Power MOSIGTs		Scan	PDF
IXGH40N60A		IXYS	Power MOSIGBTs		Scan	PDF

IXGH40N60A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
SSP35n03 Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A	Original	PDF	5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
200n60 Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120 Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40	Original	PDF	PLUS247 20N30 28N30 30N30 40N30 31N60 38N60 41N60 60N60 O-264 200n60 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Q2N4401 Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751 Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog	Original	PDF	RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
IGBT IXGH40N60A Abstract: IXGH40N60A IXGH40N60 40N60A Text: IXGH40N60A IGBT V CES 600 V 75 A 3.0 V ^C25 L O W V CE S„ High speed V CE(sat) Not for new designs Symbol Test Conditions Maximum Ratings v ces T j = 25° C to 150° C 600 V V CGR T j, = 25° C to 150° C; RC„at = 1 MQ 600 V VGES Continuous J-20 V VGE*	OCR Scan	PDF	IXGH40N60A O-247 40N60A IGBT IXGH40N60A IXGH40N60A IXGH40N60 40N60A
10A600V Abstract: 1XGH20N60AU1 IGBT cross reference HGTP20N6QB3 IXSH20N60AU1 20a600v 12A600V CT60AM-20 5N60RUFD 5A1200V Text: SAMSUNG IGBT TOSHIBA MOTOLORA HARRIS SIEM ENS IXYS HUfU3NÖ0B3S hü'mSNtäoöä U ltiJ 102 H U IU /N Ö Ü B 3 HGIP12NB0B3 IXGP10N60A U 115J101 IXGH10N60A HGTP20N6QB3 GT25JT01 HGlu2UfJt>063 IXGH20N6QA IXGH24N6QA HU Î J4UNöUt33 IXGH40N60A IXGH50N6ÛA, HU I P^NbUBaU	OCR Scan	PDF	HGIP12NB0B3 115J101 IXGP10N60A IXGH10N60A HGTP20N6QB3 GT25JT01 IXGH20N6QA IXGH24N6QA IXGH40N60A IXGH50N6 10A600V 1XGH20N60AU1 IGBT cross reference IXSH20N60AU1 20a600v 12A600V CT60AM-20 5N60RUFD 5A1200V
IXGD40N60A Abstract: 1XGH10N60 xgh10n60a IXGD30N60 IXGD10N60 IXGH40N60 IXGH50N60A 1X57 IXGD40N60 IXGH60N60 Text: IXYS Insulated Gate Bipolar Transistors IGBT-Chips Type e» High Speed Low T j. s is ir c £ tn typ 28°C ns C hip typ V V A S* IXGD28N30 IXGD40N30 300 1.8 1.45 20 20 1500 2500 180 220 1X43 1X57 IXGD10N60 IXGD20N60 IXGD31N60 IXGD30N60 IXGD38N60 IXGD40N60	OCR Scan	PDF	IXGD28N30 IXGD40N30 IXGD10N60 IXGD20N60 IXGD31N60 IXGD30N60 IXGD38N60 IXGD40N60 IXGD60N60 IXGD200N60 IXGD40N60A 1XGH10N60 xgh10n60a IXGH40N60 IXGH50N60A 1X57 IXGH60N60
Untitled Abstract: No abstract text available Text: 4686226 03E I X Y S.CORP I X Y S CORP □3 00159 D D Ë J 4böb22t, D O D D I S T 5 \|~ Power MOSIGBTs Part Number IXGP10N100 CollectorEmitter Voltage Vces Volts 1000 Continuous Pulsed Collector Current Fall Collector Current Collectoi Emitter Tc=25 °C Tc=90 °C Current Sat. Volt. Time	OCR Scan	PDF	IXGP10N100 IXGP10N90 IXGP10N90A IXGP10N80 IXGP10N8 IXGP10N100A IXGH40N60 IXGH40N60A IXGH30N60 IXGH30N60A
40n50 Abstract: 40n60 equivalent megamos 48 40n60 40N50A megamos IXGM40N60A ID 48 Megamos f g megamos IXGH40N60 Text: 46Ö6226 I X Y S CORP 9iP 00093 D T ~ PE I Llbflfc.5 5 h"'DD0 b a [i3""T I X Y S CORP R MegaMOS IGTs IXGH, IXGM N-Channel Very High Power Conductivity Modulated MOSIGTs PRELIMINARY INFORMATION FEATURES • • • • Very high current capability— 75	OCR Scan	PDF	50kHz 40n50 40n60 equivalent megamos 48 40n60 40N50A megamos IXGM40N60A ID 48 Megamos f g megamos IXGH40N60
IXGH30N50A Abstract: IXGP10N50A IXGH20N50A IXGH40N60 IXGH40N60A IXGH30N60A IXGP10N50 IXGH20N80 1xgp10n60a IXGH25N90A Text: 4686226 I X I X Y 03E S.CORP Y S CORP □3 00159 O D E I 4böb25t. DOODIST E Power MOSIGBTs Part N um ber CollectorEmitter Voltage Vces Votts Continuous Pulsed Collector Current Power Fall Dis s. Collector Current Collectoi Emitter Tc=25 °C Tc=90 °C Current Sat. Volt. Time	OCR Scan	PDF	IXGP10N100 IXGP10N100A IXGP10N90 IXGP10N90A IXGP10N80 IXGP10N80A IXGP10N60 1XGP10N60A IXGP10N50 IXGP10N50A IXGH30N50A IXGH20N50A IXGH40N60 IXGH40N60A IXGH30N60A IXGH20N80 IXGH25N90A
IXGH30N50A Abstract: IXGH20N50A IXGP10N50A IXGH20N50 IXGH25N80A ixgh40n60 IXGP10N60A Amp. mosfet 1000 watt IXGH25N90A IXGM30N60 Text: IXYS' MOSIGBT combines the best characteristics ofPower MOSFET and bipolar devices on a single mono lithic chip.The MOS gated input allows the MOSIGBT to be voltage driven like a MOSFET The complexity and cost of the drive circuitiy is greatly reduced. Since the MOSIGBT uses	OCR Scan	PDF	4bflb55b IXGH30N50A IXGH20N50A IXGP10N50A IXGH20N50 IXGH25N80A ixgh40n60 IXGP10N60A Amp. mosfet 1000 watt IXGH25N90A IXGM30N60