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    IXGH20N50A Search Results

    IXGH20N50A Datasheets (1)

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    IXGH20N50A IXYS Power MOSIGBTs Scan PDF

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    Untitled

    Abstract: No abstract text available
    Text: 4686226 03E I X Y S.CORP I X Y S CORP □3 00159 D D Ë J 4böb22t, D O D D I S T 5 |~ Power MOSIGBTs Part Number IXGP10N100 CollectorEmitter Voltage Vces Volts 1000 Continuous Pulsed Collector Current Fall Collector Current Collectoi Emitter Tc=25 °C Tc=90 °C Current Sat. Volt. Time


    OCR Scan     		PDF IXGP10N100 IXGP10N90 IXGP10N90A IXGP10N80 IXGP10N8 IXGP10N100A IXGH40N60 IXGH40N60A IXGH30N60 IXGH30N60A

    IXGH30N50A

    Abstract: IXGP10N50A IXGH20N50A IXGH40N60 IXGH40N60A IXGH30N60A IXGP10N50 IXGH20N80 1xgp10n60a IXGH25N90A
    Text: 4686226 I X I X Y 03E S.CORP Y S CORP □3 00159 O D E I 4böb25t. DOODIST E Power MOSIGBTs Part N um ber CollectorEmitter Voltage Vces Votts Continuous Pulsed Collector Current Power Fall Dis s. Collector Current Collectoi Emitter Tc=25 °C Tc=90 °C Current Sat. Volt. Time


    OCR Scan     		PDF IXGP10N100 IXGP10N100A IXGP10N90 IXGP10N90A IXGP10N80 IXGP10N80A IXGP10N60 1XGP10N60A IXGP10N50 IXGP10N50A IXGH30N50A IXGH20N50A IXGH40N60 IXGH40N60A IXGH30N60A IXGH20N80 IXGH25N90A

    IXGH30N50A

    Abstract: IXGH20N50A IXGP10N50A IXGH20N50 IXGH25N80A ixgh40n60 IXGP10N60A Amp. mosfet 1000 watt IXGH25N90A IXGM30N60
    Text: IXYS' MOSIGBT combines the best characteristics ofPower MOSFET and bipolar devices on a single mono­ lithic chip.The MOS gated input allows the MOSIGBT to be voltage driven like a MOSFET The complexity and cost of the drive circuitiy is greatly reduced. Since the MOSIGBT uses


    OCR Scan     		PDF 4bflb55b IXGH30N50A IXGH20N50A IXGP10N50A IXGH20N50 IXGH25N80A ixgh40n60 IXGP10N60A Amp. mosfet 1000 watt IXGH25N90A IXGM30N60