IXFR26N50 Search Results

IXFR26N50 Price and Stock

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IXYS Corporation IXFR26N50 MOSFET N-CH 500V 26A ISOPLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFR26N50	Tube			30	1 - 10 - 100 $6.46133 1000 $6.46133 10000 $6.46133	Buy Now
Mouser Electronics	IXFR26N50					1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXFR26N50Q MOSFET N-CH 500V 24A ISOPLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFR26N50Q	Tube			30	1 - 10 - 100 $6.46133 1000 $6.46133 10000 $6.46133	Buy Now

IXFR26N50 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXFR26N50		IXYS	200V HiPerFET power MOSFET		Original	PDF
IXFR26N50Q		IXYS	500V HiPerFET power MOSFET		Original	PDF
IXFR26N50Q		IXYS	HiPerFET Power MOSFETs ISOPLUS247		Scan	PDF

IXFR26N50 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
24N50 Abstract: 26N50 .24n50 IXFH26N50 IXFR24N50 IXFR26N50 Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 26N50 ISOPLUS247TM VDSS ID25 500 V 24 A 500 V 22 A trr £ 250 ns IXFR 24N50 Electrically Isolated Back Surface RDS(on) 0.20 W 0.23 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family	Original	PDF	26N50 ISOPLUS247TM 24N50 247TM IXFR26N50 IXFR24N50 IXFH26N50 24N50 26N50 .24n50 IXFR24N50 IXFR26N50
26N50 Abstract: No abstract text available Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 26N50 ISOPLUS247TM VDSS ID25 500 V 24 A 500 V 22 A trr £ 250 ns IXFR 24N50 Electrically Isolated Back Surface RDS(on) 0.20 W 0.23 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family	Original	PDF	26N50 ISOPLUS247TM 24N50 24N50 IXFR26N50
26N50 Abstract: No abstract text available Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM VDSS 26N50 IXFR 24N50 Electrically Isolated Back Surface ID25 500 V 24 A 500 V 22 A trr £ 250 ns RDS(on) 0.20 W 0.23 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family	Original	PDF	ISOPLUS247TM 26N50 24N50 24N50 IXFR26N50
26N50Q Abstract: IXFH26N50Q 24N50Q Text: HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM VDSS 26N50Q IXFR 24N50Q Electrically Isolated Back Surface ID25 RDS(on) 500 V 24 A 500 V 22 A trr £ 250 ns 0.20 W 0.23 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol	Original	PDF	ISOPLUS247TM 26N50Q 24N50Q 24N50Q IXFR26N50Q IXFH26N50Q
24n50 Abstract: IXFH26N50Q A24N50 .24n50 26N50 ISOPLUS247 IXFR24N50Q IXFR26N50Q SST250 Text: □IXYS Advanced Technical Information V DSS HiPerFET Power MOSFETs IXFR ISOPLUS247™ 26N50Q IXFR 24N50Q Electrically Isolated Back Surface D ^D25 24 A 500 V 22 A 500 V t rr < 250 ns DS(on) 0.20 Q 0.23 Q N-Channel Enhancement Mode HighdV/dt, Lowtrr, HDMOS™ Family	OCR Scan	PDF	ISOPLUS247â 26N50Q 24N50Q 26N50 24N50 IXFR26N50Q IXFH26N50Q A24N50 .24n50 ISOPLUS247 IXFR24N50Q SST250
Untitled Abstract: No abstract text available Text: □IXYS Advanced Technical Information VDSS HiPerFET Power MOSFETs IXFR ISOPLUS247™ D ^D25 24 A 500 V 22 A 500 V t rr < 250 ns 26N50 IXFR 24N50 Electrically Isolated Back Surface D S (on) 0.20 Q 0.23 Q N-Channel Enhancement Mode HighdV/dt, Low trr, HDM O S™ Family	OCR Scan	PDF	ISOPLUS247â 26N50 24N50 IXFR26N50
ne 22 mosfet Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50 Text: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)	OCR Scan	PDF	ISOPLUS220TM ISOPLUS247TMV T0268 T0264 OT227B O-263 O-220 247TM O-247 O-204 ne 22 mosfet IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50