61N50
Abstract: 58N50 D-68623 92810G
Text: IXFN 58N50 IXFN 61N50 Preliminary Data Sheet VDSS IXFN 58N50 500V IXFN 61N50 500V High Current Power MOSFET N-Channel Enhancement Mode Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 500 V V GS Continuous ±20
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58N50
61N50
58N50
61N50
OT-227
D-68623
92810G
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S3 DIODE schottky
Abstract: 100N10S1
Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFN 100N10S1 IXFN 100N10S2 with Schottky Diodes IXFN 100N10S3 Parallel, Buck & Boost Configurations for SMPS, PFC & Motor Control Circuits S1 S2 4 D VDSS ID25 RDS(on) = 100 V = 100 A = 15 mW S3 4(D)
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100N10S1
100N10S2
100N10S3
OT-227
E153432
S3 DIODE schottky
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S3 DIODE schottky
Abstract: 100N1
Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFN 100N10S1 IXFN 100N10S2 with Schottky Diodes IXFN 100N10S3 Parallel, Buck & Boost Configurations for SMPS, PFC & Motor Control Circuits S1 S2 4 D VDSS ID25 RDS(on) = 100 V = 100 A = 15 mW S3 4(D)
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100N10S1
100N10S2
100N10S3
OT-227
E153432
S3 DIODE schottky
100N1
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200N07
Abstract: 200N06 180N07 IXFN180
Text: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol IXFN 200 N06 IXFN 180 N07 IXFN 200 N07 Maximum Ratings TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 TC= 25°C; Chip capability
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150OC
100OC
200N07
200N06
180N07
IXFN180
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IXFN180
Abstract: 200N06
Text: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol IXFN 200 N06 IXFN 180 N07 IXFN 200 N07 Maximum Ratings TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 TC= 25°C; Chip capability
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200N06/200N07
180N07
IXFN180
150OC
100OC
IXFN180
200N06
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol IXFN 200 N06 IXFN 180 N07 IXFN 200 N07 Maximum Ratings TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient I D25 TC= 25°C; Chip capability
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFN 120N20 VDSS ID25 = 200 V = 120 A = 17 mW Single MOSFET Die RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr £ 250 ns Preliminary data sheet Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 Symbol
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120N20
OT-227
E153432
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFN 120N20 VDSS ID25 = 200 V = 120 A = 17 mW Single MOSFET Die RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr £ 250 ns Preliminary data sheet Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 Symbol
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120N20
OT-227
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43N60
Abstract: 40n60 IXFN40N60 IXFK40N60 IXFK43N60 IXFN43N60
Text: ADVANCE INFORMATION HiPerFETTM Power MOSFET IXFN 43N60 IXFN 40N60 IXFK 43N60 IXFK 40N60 Single MOSFET Die VDSS I D25 RDS on trr 600V 600V 600V 600V 43A 40A 43A 40A 0.13W 0.15W 0.13W 0.15W 200ns 200ns 200ns 200ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings
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43N60
40N60
200ns
O-264
43N60
40n60
IXFN40N60
IXFK40N60
IXFK43N60
IXFN43N60
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50n80
Abstract: 50N80Q2 IXFN50N80Q2
Text: HiPerFETTM Power MOSFET IXFN 50N80Q2 VDSS = ID25 = RDS on = N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 800 V 50 A 0.15 Ω trr ≤ 300 ns Preliminary Data Sheet miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions
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50N80Q2
OT-227
E153432
728B1
123B1
728B1
065B1
50n80
50N80Q2
IXFN50N80Q2
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80N50Q2
Abstract: 0169E 123B16
Text: Advance Technical Information HiPerFETTM Power MOSFET IXFN 80N50Q2 VDSS = 500 V ID25 = 80 A Ω RDS on = 60 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr miniBLOC, SOT-227 B (IXFN) E153432 Symbol
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80N50Q2
OT-227
E153432
728B1
123B1
728B1
065B1
80N50Q2
0169E
123B16
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100N10S2
Abstract: 100N10S1 pehf
Text: HiPerFETTM Power MOSFETs IXFN 100N10S1 IXFN 100N10S2 with Schottky Diodes IXFN 100N10S3 m~ê~ääÉäI=_ìÅâ=C=_ççëí=`çåÑáÖìê~íáçåë Ñçê=pjmpI=mc`=C=jçíçê=`çåíêçä=`áêÅìáíë S1 VDSS ID25 RDS on S2 QEaF = 100 V = 100 A Ω
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100N10S1
100N10S2
100N10S3
100N10S2
100N10S1
pehf
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information HiPerFETTM Power MOSFET IXFN 80N50Q2 VDSS = 500 V ID25 = 80 A Ω RDS on = 60 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV /dt, Low trr miniBLOC, SOT-227 B (IXFN) E153432 Symbol
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80N50Q2
OT-227
E153432
728B1
123B1
065B1
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106N20
Abstract: 90N20 IXFN 360 D-68623
Text: IXFK 90N20 IXFN 106N20 Preliminary Data VDSS TM HiPerFET Power MOSFET ID25 RDS on trr IXFK 90N20 200V 90A 23mΩ 200ns IXFN 106N20 200V 106A 20mΩ 200ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK) Symbol Test Conditions
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90N20
106N20
90N20
200ns
106N20
O-264
D-68623
IXFN 360
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFET IXFN 72N55Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 550 V ID25 = 72 A Ω RDS on = 72 mΩ ≤ 250 ns trr Preliminary Data Sheet miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions
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72N55Q2
OT-227
E153432
728B1
123B1
728B1
065B1
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ixys ixfn 55n50
Abstract: 50n50 IXFK50N50 IXFN50N50 IXFK55N50 IXFN55N50
Text: HiPerFETTM Power MOSFET IXFN IXFN IXFK IXFK Single Die MOSFET 55N50 50N50 55N50 50N50 VDSS ID25 RDS on 500V 500V 500V 500V 55A 50A 55A 50A 80mΩ 100mΩ 80mΩ 100mΩ trr 250ns 250ns 250ns 250ns Preliminary data sheet Symbol Test Conditions TO-264 AA (IXFK)
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55N50
50N50
250ns
O-264
ixys ixfn 55n50
50n50
IXFK50N50
IXFN50N50
IXFK55N50
IXFN55N50
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80N50P
Abstract: IXFN 80N50P E153432
Text: IXFN 80N50P Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
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80N50P
80N50P
IXFN 80N50P
E153432
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ixys ixfn 55n50
Abstract: ixys ixfn55n50 IXFK50N50
Text: HiPerFETTM Power MOSFET IXFN 55N50 IXFN 50N50 IXFK 55N50 IXFK 50N50 Single MOSFET Die VDSS I D25 RDS on t rr 500V 500V 500V 500V 55A 80mW 250ns 50A 100mW 250ns 55A 80mW 250ns 50A 100mW 250ns Preliminary data sheet Symbol Test Conditions TO-264 AA (IXFK) Maximum Ratings
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55N50
50N50
50N50
250ns
100mW
ixys ixfn 55n50
ixys ixfn55n50
IXFK50N50
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFET IXFN 72N55Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 550 V ID25 = 72 A Ω RDS on = 72 mΩ ≤ 250 ns trr Preliminary Data Sheet miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions
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72N55Q2
OT-227
E153432
728B1
123B1
728B1
065B1
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73N30
Abstract: 1M300 "SOT-227 B" dimensions 6206 sot 89 D-68623 ixfk73n30
Text: IXFK 73N30 IXFN 73N30 Preliminary Data VDSS = 300V ID25 = 73A HiPerFETTM Power MOSFET RDS on = 45mΩ N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr ≤ 200ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25°C to 150°C
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73N30
200ns
O-264
D-68623
73N30
1M300
"SOT-227 B" dimensions
6206 sot 89
ixfk73n30
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IXFK110N20
Abstract: 20n20 IXFN120N20 IXFK120N20
Text: •1IXYS_ ^ m ^ VDSS HiPerFET Power MOSFET IXFN 120N20 IXFN 110N20 IXFK 120N20 IXFK 110N20 Single MOSFET Die Symbol Test Conditions Maximum Ratings IXFK IXFN IXFN 120 110 120 IXFK 110 v DSS TO-264 AA IXFK ?D VoCR Tj = 25°C to 150°C
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IXFN120N20
IXFN110N20
IXFK120N20
IXFK110N20
O-264
20N20
20n20
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1xys
Abstract: No abstract text available
Text: □IXYS IXFN 58N50 IXFN 61N50 Preliminary Data Sheet V DSS IXFN 58N50 500V IXFN 61N50 500V High Current Power MOSFET p ^D25 DS on 58A 61A 85 m£2 75 mû N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings v DSS T j = 25°C to 150°C 500 V v DGR
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58N50
61N50
58N50
61N50
150eC,
1xys
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IXFN40N50
Abstract: No abstract text available
Text: DIXYS IXFN 55N50 IXFN 50N50 IXFK 55N50 IXFK 50N50 Single MOSFET Die rr Test Conditions Maximum Ratings IXFK IXFN IXFN 50 55 50 IXFK 55 Td = 25°C to 150°C T j = 25°C to 150°C 500 500 500 500 V V VGS v GSM Continuous Transient ±20 ¿30 ±20 ±30 V V »D25
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IXFN55N50
IXFN50N50
IXFK55N50
IXFK50N50
O-264
OT-227
IXFK55N50
IXFN55N50
BffW80N50
IXFN40N50
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IXYS CS 30-12
Abstract: 36N100
Text: IXYS Advanced Technical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 36N100 1000 V 36 A 0.24 Q VDSS I D25 R DS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions v DSS
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36N100
to150
OT-227
IXYS CS 30-12
36N100
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