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    90N20 Search Results

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    90N20 Price and Stock

    EDAC Inc 690N208-224-020

    690 SERIES DUAL STACK USB TYPE-A
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    DigiKey 690N208-224-020 Tray 1,000 1
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    Mouser Electronics 690N208-224-020
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    EDAC Inc 690N208-624-021

    690 SERIES DUAL STACK USB TYPE-A
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    EDAC Inc 690N208-224-021

    690 SERIES DUAL STACK USB TYPE-A
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    DigiKey 690N208-224-021 Tray 920 1
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    Infineon Technologies AG IRFP90N20DPBF

    MOSFET N-CH 200V 94A TO247AC
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    DigiKey IRFP90N20DPBF Tube 595 1
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    Avnet Americas IRFP90N20DPBF Tube 722 400
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    Mouser Electronics IRFP90N20DPBF 2,894
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    Newark IRFP90N20DPBF Bulk 882 1
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    RS IRFP90N20DPBF Bulk 44 Weeks 1
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    TME IRFP90N20DPBF 627 1
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    Chip1Stop IRFP90N20DPBF Tube 459
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    EBV Elektronik IRFP90N20DPBF 13,200 11 Weeks 400
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    New Advantage Corporation IRFP90N20DPBF 8,800 1
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    Win Source Electronics IRFP90N20DPBF 17,900
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    IXYS Corporation IXFX90N20Q

    MOSFET N-CH 200V 90A PLUS247-3
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    90N20 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    90N20A Nihon Dempa Kogyo CRYSTAL FILTER Original PDF
    90N20BC Nihon Dempa Kogyo CRYSTAL FILTER Original PDF

    90N20 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFX 90N20Q IXFK 90N20Q VDSS ID25 = 200 V = 90 A = 22mW Q-CLASS RDS on Single MOSFET Die trr £ 200 ms N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Preliminary data Symbol Test Conditions


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    PDF 90N20Q 90N20Q 247TM O-264

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFX 90N20Q IXFK 90N20Q VDSS ID25 = = = 200 V 90 A Ω 22 mΩ Q-CLASS RDS on Single MOSFET Die trr ≤ 200 µs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions Maximum Ratings


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    PDF 90N20Q 247TM 728B1

    IXFX 90N20Q

    Abstract: 90N20Q 90n20
    Text: HiPerFETTM Power MOSFETs IXFX 90N20Q IXFK 90N20Q VDSS ID25 = = = 200 V 90 A Ω 22 mΩ Q-CLASS RDS on Single MOSFET Die trr ≤ 200 µs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions Maximum Ratings


    Original
    PDF 90N20Q 247TM 728B1 123B1 728B1 065B1 IXFX 90N20Q 90N20Q 90n20

    IXFX 90N20Q

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFX 90N20Q IXFK 90N20Q VDSS ID25 = 200 V = 90 A = 22mW Q-CLASS RDS on Single MOSFET Die trr £ 200 ms N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Preliminary data Symbol Test Conditions


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    PDF 90N20Q 90N20Q 247TM O-264 IXFX 90N20Q

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFET TM Power MOSFETs IXFX 90N20Q IXFK 90N20Q VDSS ID25 = = = 200 V 90 A 22 mW Q-CLASS RDS on Single MOSFET Die trr £ 200 ms N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol


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    PDF 90N20Q 247TM Ratin70

    106N20

    Abstract: 90N20 IXFN 360 D-68623
    Text: IXFK 90N20 IXFN 106N20 Preliminary Data VDSS TM HiPerFET Power MOSFET ID25 RDS on trr IXFK 90N20 200V 90A 23mΩ 200ns IXFN 106N20 200V 106A 20mΩ 200ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK) Symbol Test Conditions


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    PDF 90N20 106N20 90N20 200ns 106N20 O-264 D-68623 IXFN 360

    90N20Q

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFX 90N20Q IXFK 90N20Q VDSS ID25 = = = 200 V 90 A Ω 22 mΩ Q-CLASS RDS on Single MOSFET Die trr ≤ 200 µs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions Maximum Ratings


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    PDF 90N20Q 247TM 728B1 90N20Q

    IXFX 90N20Q

    Abstract: 90N20Q
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFX 90N20Q IXFK 90N20Q VDSS ID25 = = = 200 V 90 A Ω 22 mΩ Q-CLASS RDS on Single MOSFET Die trr ≤ 200 µs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX)


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    PDF 90N20Q 247TM IXFX 90N20Q 90N20Q

    IRM-38

    Abstract: 100N20 106N20 IXFK90N20 90N20 IXFN100N20 IXFN106N20
    Text: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFK 90 N 20 IXFN 100 N 20 IXFN 106 N 20 ID25 RDS on 200 V 90 A 200 V 100 A 200 V 106 A trr £ 200 ns 23 mW 23 mW 20 mW TO-264 AA Symbol Test Conditions Maximum Ratings


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    PDF O-264 90N20 100N20 106N20 IXFN90N20 IXFN106N20 IRM-38 106N20 IXFK90N20 IXFN100N20 IXFN106N20

    transistor 12n60c

    Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
    Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design


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    PDF ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET

    70N15A

    Abstract: 90N20BC 90N8B 70N15BR 70N20A 70N20B 70N30AC 70N30BH 90N20A 90N26BA
    Text: #5. P179-198 02.2.5 4:14 PM ページ 184 CRYSTAL FILTERS 70, 90MHZ SERIES MCF • Features 8 Compactness and light weight 8 Low insertion loss 8 Stable temperature characteristics ■ 70MHz, 90MHz Overtone Model Nominal Frequency MHz Pole 70 2 70N15A Pass Bandwidth


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    PDF P179-198 90MHZ 70MHz, 70N15A fo-910kHz) D-360-A 70N15BR D-360-B 70N20A 70N15A 90N20BC 90N8B 70N15BR 70N20A 70N20B 70N30AC 70N30BH 90N20A 90N26BA

    C1162

    Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


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    PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158

    Untitled

    Abstract: No abstract text available
    Text: 70, 90MHz Series MCF • Features 8 Compactness and light weight 8 Low insertion loss 8 Stable temperature characteristics ■ 70MHz, 90MHz Overtone Model Nominal Frequency MHz Pole 70 2 70N15A Pass Bandwidth (dB) 3 (kHz) ±7.5 Attenuation Bandwidth Ripple


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    PDF 90MHz 70MHz, 70N15A 70N15BR 70N20A 70N20B 70N30AC 70N30BH 90N20A

    sd 20n60

    Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
    Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06


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    PDF O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80

    RM338

    Abstract: qfl 289 106N20 IXFK90N20
    Text: IXFK 90N20 IXFN 106N20 inixYS Preliminary Data D ^D S S HiPerFET Power MOSFET IXFK 90N20 200V IXFN 106N20 200V N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowtrr Symbol Test C onditions v* DSS Td = 25°C to 150°C 200 200 V vDGR Tj = 25°C to 150°C; RGS = 1 Mi2


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    PDF IXFK90N20 IXFN106N20 90N20 106N20 200ns 20mi2 200ns d68623 106N20 RM338 qfl 289

    ax2002

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFET Power MOSFETs V DSS IXFK 90N20Q IXFX 90N20Q ^D25 R Q Class DS on = 200 V = 90 A = 22 m ii t < 200 ns N-Channel Enhancement Mode Avalanche Rated Low Q High dv/dt,Low t Symbol Test C onditions M axim um Ratings V OSS


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    PDF 90N20Q 90N20Q 247TM ax2002

    Untitled

    Abstract: No abstract text available
    Text: IPIXYS Advanced Technical Information IXFK 90N20Q IXFX 90N20Q HiPerFET Power MOSFETs Q Class = 200 V = 90 A DSS ^D25 P DS on * rr = 2 2 m ß < 200 ns N-Channel Enhancement Mode Avalanche Rated Low Qg High dv/dt,Low trr Symbol Test Conditions Maximum Ratings


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    PDF 90N20Q 90N20Q to150 O-264AA PLUS247TM

    6 r 360

    Abstract: 106N20 100n20 IXFK90N20
    Text: HHXYS VDSS HiPerFET Power MOSFETs IXFK 90N20 IXFN 100N20 IXFN 106N20 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 200 V 200 V 200 V p ^D25 DS on 90 A 23 mQ 100 A 23 mQ 106 A 20 mß t„ ^200 ns TO-264 AA (IXFK) Symbol Test Conditions


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    PDF IXFK90N20 IXFN100N20 IXFN106N20 O-264 90N20 100N20 106N20 Cto150 50Drain 6 r 360

    mosfet 4400

    Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS
    Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,


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    PDF 100N10 90N20 73N30 44N50 48N50 36N60 67N10 75N10 42N20 50N20 mosfet 4400 MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS

    12N60c equivalent

    Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q
    Text: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t


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    PDF ISOPLUS220TM US247TM 247TM ISOPLUS22rM ISOPLUS227TM IXFE180N10 IXFE73N30Q IXFE48N50Q IXFE48N50QD2 12N60c equivalent 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q

    40n80

    Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
    Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18


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    PDF 5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI

    ixys ixfn 55n50

    Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
    Text: i , i - •*.*• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ | Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01


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    PDF O-247 O-247 T0-204 O-264 O-264 76N06-11 75N06-12 110N06 76N07-11 76N07-12 ixys ixfn 55n50 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60

    IXfk 75 N 50

    Abstract: 15N80 50N-2 110N06 n 100N10 110N06 10n90 IXFH40N30 ixfk73n30
    Text: HiPerFET Power MOSFETs N-Channel Enhancement-Mode with Fast Intrinsic Diode Type DSS 0 25 DS(on) max. C lss typ. Tc = 25°C New Tc = 25°C n C rss typ. max. qb max. thJC max. D max. pF PF ns nC K/W W IXFH 76N06-11 IXFH 76N06-12 60 76 0.011 0.012 4400


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    PDF 76N06-11 76N06-12 76N07-11 76N07-12 67N10 75N10 42N20 50N20 50N20S 58N20 IXfk 75 N 50 15N80 50N-2 110N06 n 100N10 110N06 10n90 IXFH40N30 ixfk73n30

    8n80

    Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
    Text: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1


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    PDF CS1011 -18io1 CS1011-22io1 CS1011-25io1 CS1250-12io1 CS1250-14io1 CS1250-16io1 CS20-12 CS20-14 CS20-16 8n80 DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B