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    7N80 Search Results

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    7N80 Price and Stock

    STMicroelectronics STU7N80K5

    MOSFET N-CH 800V 6A IPAK
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    DigiKey STU7N80K5 Tube 2,699 1
    • 1 $2.81
    • 10 $2.81
    • 100 $1.3048
    • 1000 $1.0025
    • 10000 $0.83712
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    STMicroelectronics STU7N80K5 1,841 1
    • 1 $1.95
    • 10 $1.09
    • 100 $1.03
    • 1000 $0.9
    • 10000 $0.9
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    Bristol Electronics STU7N80K5 3,755
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    Avnet Silica STU7N80K5 15 Weeks 75
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    Chip1Stop STU7N80K5 Cut Tape 40
    • 1 $0.784
    • 10 $0.781
    • 100 $0.781
    • 1000 $0.781
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    EBV Elektronik STU7N80K5 15 Weeks 75
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    Vishay Siliconix SIHA17N80E-GE3

    N-CHANNEL 800V
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    DigiKey SIHA17N80E-GE3 Cut Tape 1,980 1
    • 1 $5.7
    • 10 $3.808
    • 100 $5.7
    • 1000 $2.2779
    • 10000 $2.2779
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    SIHA17N80E-GE3 Reel 1,000 1,000
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    • 1000 $2.1825
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    Infineon Technologies AG SPB17N80C3ATMA1

    MOSFET N-CH 800V 17A TO263-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPB17N80C3ATMA1 Digi-Reel 1,728 1
    • 1 $5.38
    • 10 $3.587
    • 100 $5.38
    • 1000 $2.1397
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    SPB17N80C3ATMA1 Cut Tape 1,728 1
    • 1 $5.38
    • 10 $3.587
    • 100 $5.38
    • 1000 $2.1397
    • 10000 $2.1397
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    SPB17N80C3ATMA1 Reel 1,000 1,000
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    Bristol Electronics SPB17N80C3ATMA1 38
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    Chip1Stop SPB17N80C3ATMA1 Cut Tape 2,000
    • 1 $4.1
    • 10 $2.9
    • 100 $2.16
    • 1000 $1.93
    • 10000 $1.93
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    EBV Elektronik SPB17N80C3ATMA1 110,000 16 Weeks 1,000
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    New Advantage Corporation SPB17N80C3ATMA1 82,000 1
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    Win Source Electronics SPB17N80C3ATMA1 48,100
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    • 100 $2.392
    • 1000 $2.073
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    Vishay Siliconix SIHP17N80E-GE3

    MOSFET N-CH 800V 15A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHP17N80E-GE3 Tube 1,000 1
    • 1 $4.55
    • 10 $3.039
    • 100 $4.55
    • 1000 $2.17624
    • 10000 $2.17624
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    Vishay Siliconix SIHP17N80AE-GE3

    MOSFET N-CH 800V 15A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHP17N80AE-GE3 Tube 904 1
    • 1 $3.51
    • 10 $3.51
    • 100 $3.51
    • 1000 $1.20834
    • 10000 $1.13588
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    7N80 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    7n80

    Abstract: 7N80 TO220 7N80L-TF3-T 66a 523
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N80 Preliminary Power MOSFET 7A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 7N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a


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    PDF O-220 O-220F O-220F1 O-263 QW-R502-523 7n80 7N80 TO220 7N80L-TF3-T 66a 523

    7N80

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N80 Power MOSFET 7A, 800V N-CHANNEL POWER MOSFET 1   * RDS on <1.8Ω@ VGS =10V * High switching speedY * 100% avalanche tested  1 1 TO-220F2 TO-220F1 1 1 FEATURES TO-220F TO-220 DESCRIPTION The UTC 7N80 is an N-channel mode power MOSFET using UTC’s


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    PDF O-220F2 O-220F1 O-220F O-220 O-263 O-220F3 QW-R502-523 7N80

    7N80 TO220

    Abstract: 7n80
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N80 Power MOSFET 7A, 800V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 7N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a


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    PDF O-220 O-220F O-220F1 O-220F2 O-263 QW-R502-523 7N80 TO220 7n80

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N80 Power MOSFET 7A, 800V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC 7N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum


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    PDF O-220F O-220 O-220F1 O-220F2 O-263 QW-R502-523

    7N80

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N80 Power MOSFET 7A, 800V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 7N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum


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    PDF O-220 O-220F O-220F1 O-220F2 O-263 QW-R502-523 7N80

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N80 Preliminary Power MOSFET 7.0 Amps, 800 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 7N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costomers with planar stripe and DMOS technology. This technology specializes in allowing a


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    PDF O-220 O-220F O-220F1 O-263 QW-R502-523

    DIODE 929

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N80Z Power MOSFET 7A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N80Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a


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    PDF 7N80Z 7N80Z 7N80ZL-TF1-T 7N80ZG-TF1-T QW-R502-929, DIODE 929

    IXFI7N80P

    Abstract: IXFP7N80P IXFA7N80P 7N80P IXFI 7n80
    Text: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFA 7N80P IXFI 7N80P IXFP 7N80P VDSS ID25 RDS on trr Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 800 800 V V VGS VGSM


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    PDF 7N80P O-263 O-220, O-220 IXFI7N80P IXFP7N80P IXFA7N80P 7N80P IXFI 7n80

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


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    PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    Untitled

    Abstract: No abstract text available
    Text: 7N80K5, 7N80K5, 7N80K5 N-channel 800 V, 0.95 Ω typ., 6 A Zener-protected SuperMESH 5 Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - production data Features TAB Order codes 2 3 1 VDS RDS on max ID PTOT 800 V 1.2 Ω 6A 110 W 7N80K5


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    PDF STD7N80K5, STP7N80K5, STU7N80K5 O-220 STD7N80K5 STP7N80K5 O-220 AM01476v1 DocID023448

    7n80

    Abstract: Al3m 7N80 TO220 3VD450800YL
    Text: 3VD450800YL 3VD450800YL 高压MOSFET芯片 描述 ¾ 3VD450800YL为采用硅外延工艺制造的N沟道 增强型800V高压MOS功率场效应晶体管; ¾ 先进的高压分压终止环结构; ¾ 较高的雪崩能量; ¾ 漏源二极管恢复时间快;


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    PDF 3VD450800YL 3VD450800YL 3VD450800YLN 800VMOS O-220, 340mX506m O-220 800VVGS 10VID 7n80 Al3m 7N80 TO220

    7N80K5

    Abstract: No abstract text available
    Text: 7N80K5, 7N80K5 N-channel 800 V, 0.95 Ω typ., 6 A Zener-protected SuperMESH 5 Power MOSFETs in TO-220FP and I2PAKFP packages Datasheet - production data Features Order codes VDS RDS on max ID PTOT 800 V 1.2 Ω 6A 25 W 7N80K5 7N80K5 • Worldwide best FOM (figure of merit)


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    PDF STF7N80K5, STFI7N80K5 O-220FP STF7N80K5 O-220FP DocID025377 7N80K5

    Untitled

    Abstract: No abstract text available
    Text: 3VD450800YL 3VD450800YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD450800YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. ¾ Advanced termination scheme to provide enhanced voltage-blocking capability.


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    PDF 3VD450800YL 3VD450800YL O-220

    C1162

    Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


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    PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158

    7N80K5

    Abstract: V/7N80K5
    Text: 7N80K5 N-channel 800 V, 0.95 Ω typ., 3.6 A Zener-protected SuperMESH 5 Power MOSFET in a PowerFLAT™ 5x6 VHV package Datasheet − production data Features Order code VDS RDS on max. ID 7N80K5 800 V 1.2 Ω 3.6 A • Outstanding RDS(on)*area 1 • Worldwide best FOM (figure of merit)


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    PDF STL7N80K5 DocID025551 7N80K5 V/7N80K5

    7N80K5

    Abstract: STU7N80K5 marking 4J to252
    Text: 7N80K5, 7N80K5, 7N80K5, 7N80K5 N-channel 800 V, 0.95 Ω typ., 6 A Zener-protected SuperMESH 5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet — preliminary data Features TAB Type VDS RDS on max ID PTOT 7N80K5 7N80K5


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    PDF STD7N80K5, STF7N80K5, STP7N80K5, STU7N80K5 O-220FP, O-220 STD7N80K5 STF7N80K5 STP7N80K5 7N80K5 STU7N80K5 marking 4J to252

    7N80

    Abstract: 8N80 gs 1117 ax 17n80
    Text: n TV V C U 1 A I J IXFH 7N80 ,XFM 7N80 IXFH 8N80 HiPerFET Power MOSFETs 1 TM IXFM 8N80 IXFH/FM 7N80 IXFH/FM 8N80 □ VDSs ^D25 DS on 800 V 800 V 7A 8A 1.4 a 1.2 Q N-Channel Enhancement Mode High d v /d t, L o w t ^ , HDMOS Family Symbol Test Conditions


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    PDF

    7N80E

    Abstract: 7N80 MOSFET MTW
    Text: MOTOROLA Order this document by 7N80E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTW 7N80E TMOS E-FET ™ Power Field Effect Transistor T O -2 4 7 W ith Isolated Mounting Hole Motorola Preferred Device TMOS POWER FET 7.0 AMPERES 800 VOLTS


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    PDF MTW7N80E/D 7N80E 340K-01 7N80E 7N80 MOSFET MTW

    6N60E

    Abstract: 10N100E 14n50e MOSFET 20n50e 8n50e 35N15E 32N20E 20N50E 6N100E 16N40E
    Text: ir TMOS TM OS Power MOSFETs Plastic Packages — TO-247 TO-247 CASE 340F-03 MTW PREFIX — Isolateci TO-218 Table 4 — N-Channel TO-247 VDss (Volts) Min RDS(on) I d (Ohms) (Amps) Max Device 1000 800 600 2 3 M TW 6N100E Table 5 — N- and P-Channel Isolated TO-218


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    PDF O-247 O-218 340F-03 340B-03 O-247 6N100E 10N100E 6N60E 14n50e MOSFET 20n50e 8n50e 35N15E 32N20E 20N50E 16N40E

    mosfet 4400

    Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS
    Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,


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    PDF 100N10 90N20 73N30 44N50 48N50 36N60 67N10 75N10 42N20 50N20 mosfet 4400 MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS

    75N1

    Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B
    Text: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH


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    PDF 76N07-11 76N07-12 67N10 75N10 42N20 50N20 58N20 O-247 O-204 75N1 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 ixtn 44N50 KS 4400 204 3B

    40n80

    Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
    Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18


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    PDF 5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI

    MTM13N50E

    Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
    Text: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”


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    PDF BUZ10 BUZ11 BUZ11A BUZ11S2 BUZ15 BUZ171 BUZ20 BUZ21 BUZ23 BUZ31 MTM13N50E P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E

    IXfk 75 N 50

    Abstract: 15N80 50N-2 110N06 n 100N10 110N06 10n90 IXFH40N30 ixfk73n30
    Text: HiPerFET Power MOSFETs N-Channel Enhancement-Mode with Fast Intrinsic Diode Type DSS 0 25 DS(on) max. C lss typ. Tc = 25°C New Tc = 25°C n C rss typ. max. qb max. thJC max. D max. pF PF ns nC K/W W IXFH 76N06-11 IXFH 76N06-12 60 76 0.011 0.012 4400


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    PDF 76N06-11 76N06-12 76N07-11 76N07-12 67N10 75N10 42N20 50N20 50N20S 58N20 IXfk 75 N 50 15N80 50N-2 110N06 n 100N10 110N06 10n90 IXFH40N30 ixfk73n30