IIJ90U Search Results

MM1225

Abstract: No abstract text available
Text: 3SK309 GaAs N Channel Dual Gate MES FET UHF RF Amplifier HITACHI ADE-208-472 A 2nd. Edition Features • Capable of low voilage operation VDS = 1.5 to 3 V • Excellent low noise characteristics (NF = 1.25 dB typ. at f = 900 MHz) • High power gain (PG = 21.0 dB typ. at f = 900 MHz)