555 timer datasheet
Abstract: sine wave generator using ic 555 7555 low power timer ic IC 555 dark detector alarm using 555 timer 555 timer astable multivibrator ic 555 timer ic 555 timer astable multivibrator schmitt trigger using ic 555 555 timer
Text: by Tony van Roon Thank you Ron Harrison from Micron Technology, Inc. for pointing out the errors in this tutorial! The 555 timer IC was first introduced around 1971 by the Signetics Corporation as the SE555/NE555 and was called "The IC Time Machine" and was also the very first and only
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SE555/NE555
60sec.
referens\FAKTA\TUTORIALS\555\555
20Timer-Oscil.
555 timer datasheet
sine wave generator using ic 555
7555 low power timer ic
IC 555
dark detector alarm using 555 timer
555 timer astable multivibrator ic
555 timer ic
555 timer astable multivibrator
schmitt trigger using ic 555
555 timer
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WS128N
Abstract: ba 555 nc 555 WS064 history of 555 PWA with 555 S29WS128N S29WS256N S29WS-N S29WS-P
Text: S29WS-N to S29WS-P Migration Migrating from the WS-N 110 nm to the WS-P (90 nm) Application Note Introduction The S29WS-N and S29WS-P flash family architectures are quite similar; however, migration from the S29WS-N to S29WS-P may require both hardware and software changes. This application note illuminates
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S29WS-N
S29WS-P
S29WS-P
S29WS-P.
WS128N
ba 555
nc 555
WS064
history of 555
PWA with 555
S29WS128N
S29WS256N
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NS256N
Abstract: S29NS-N S29NS-P VDC048 VDE044 128M256 NS128N
Text: S29NS-N to S29NS-P Migration Migrating from the NS-N 110 nm to the NS-P (90 nm) Application Note Introduction Every effort was made to ensure seamless migration from the S29NS-N to the S29NS-P. Software Migration Considerations There are very few changes required in SW when migrating from the S29NS-N to S29NS-P
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S29NS-N
S29NS-P
S29NS-P.
S29NS-P
NS256N
VDC048
VDE044
128M256
NS128N
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WS256N
Abstract: ws256n spansion 28F256L18 S29WS256N S29WS-N WS256 Spansion
Text: Intel to Spansion Migration Replacing Intel Devices with Spansion Devices Application Note by Bushra Haque Introduction Understanding the basic differences between Spansion and Intel devices provides greater insight about the kinds of compatibility issues to consider when using Spansion devices to replace Intel devices. This
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ic1 ne555
Abstract: 555 ic CR25 resistor NE555 timer of ic1 NE555 NE555N timer 555 timer construction and components NE555N IC timer IC1 NE555 pin configuration ic1 555 timer
Text: Norfolk Amateur Radio Club DF100 direction finder project for “Foxhunting” I ntroduction The DF100 is a simple direction finder designed for ‘Fox Hunt’ events on 2 metres, although could be adapted for other bands. Basically it works by using 2 identical Dipoles parallel with each other and
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DF100
DF100.
100pF
BSX20
12MHz
ic1 ne555
555 ic
CR25 resistor
NE555 timer
of ic1 NE555
NE555N timer
555 timer construction and components
NE555N IC timer
IC1 NE555 pin configuration
ic1 555 timer
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gp2ap054a00f
Abstract: No abstract text available
Text: OPTO PHOTOINTERRUPTERS FOR SPECIFIC APPLICATIONS / PROXIMITY SENSOR / PROXIMITY SENSOR WITH INTEGRATED AMBIENT LIGHT SENSOR <For amusement use> Ta = 25°C Model No. GP2A222HCKA▲ Electro-optical characteristics Dissipation current Response frequency Supply voltage
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GP2A222HCKAâ
IR3N184)
GP2AP002S30F
GA1AUV100WP
gp2ap054a00f
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated Green FCX555 150V PNP HIGH VOLTAGE SWITCHING TRANSISTOR IN SOT89 Features Mechanical Data • • • • BVCEO > -150V BVCEV > -180V IC = -700mA high Continuous Collector Current Low saturation voltage VCE sat < -300mV @ -100mA
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FCX555
-150V
-180V
-700mA
-300mV
-100mA
FCX495
AEC-Q101
J-STD-020
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PIX-1400
Abstract: No abstract text available
Text: RGB624/RGB624DB 3.0 Modes of Operation Pixel data can come from the V G A port or the VRAM pixel port, as selected by the P O R T S E L bit of the M is cellaneous Control 2 register. If the V R A M pixel port is selected, the pixel format can be 4 B P P bits per pixel , 8 BPP, 15/16 BPP, 24 B P P
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RGB624/RGB624DB
PIX-1400
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29f800bb
Abstract: IC 555 architecture 29f800bb55 29F800BB-55
Text: AMD3 Am29F800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 Volt-only operation for read, erase, and program operations ■ Top or bottom boot block configurations
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Am29F800B
8-Bit/512
16-Bit)
Am29F800
29f800bb
IC 555 architecture
29f800bb55
29F800BB-55
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29lv200
Abstract: AM29LV200BT-50R IC 555 architecture
Text: AMDJ1 Am29LV200B 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 2.7 to 3.6 volt read and w rite operations for battery-pow ered applications ■ ■ Top or bottom boot block configurations
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Am29LV200B
8-Bit/128
16-Bit)
29LV200
20-year
AM29LV200BT-50R
IC 555 architecture
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2N6782
Abstract: 2n6800 LH0063 QPL-19500
Text: Standard Power MOSFETs 2N6782 File Number 1592 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 3.5A, 100V ro s o n = 0 .6 O Features: • SOA is power-dissipation limited ■ Nanosecond switching speeds
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2N6782
2N6782
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
LH0063
QPL-19500
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Untitled
Abstract: No abstract text available
Text: AMD il PRELIM IN ARY Am29SL800C 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 1.8 Volt-only Super Low Voltage Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 1.8 to 2.2 V for read, program, and erase operations Top or bottom boot block configurations
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Am29SL800C
8-Bit/512
16-Bit)
29SL800B
FBB048:
29SL800C
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CH8391
Abstract: fs30j Generator control panel 1850 diagram CH8391V
Text: CH8391 CHRONTEL True-Color ChronDAC with 8-Bit Interface Features Description Three high speed 8-bit 110/135 M Hz DACs Three high speed 256 x 6-bit color palette RAMs Compatible with ATT20C490 / 491 / 492 display m odes M IX-COLOR : true on-the-fly mode switching
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CH8391
ATT20C490
CH8391Ã
0Q001Ã
fs30j
Generator control panel 1850 diagram
CH8391V
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Untitled
Abstract: No abstract text available
Text: AMD£I Am29LV200B 2 M egabit 256 K x 8-B it/I 28 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • ■ Single pow er supply operation Em bedded A lgorithm s — 2.7 to 3.6 volt read and w rite operations for battery-powered applications
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Am29LV200B
16-Bit)
Am29LV200
Am29LV200BT-70
Am29LV200BB-70
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29F800B
Abstract: 29f800bb 29F800BT 29f800ba m29f800bb M29F800BT
Text: AMDH Am29F800BT/Am29F800BB 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 5.0 Volt-only Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • Single pow er supply operation — 5.0 Volt-only operation for read, erase, and program operations ■ Top or bottom boot block configurations
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Am29F800BT/Am29F800BB
8-Bit/512
16-Bit)
29F800
29F800B
29f800bb
29F800BT
29f800ba
m29f800bb
M29F800BT
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Untitled
Abstract: No abstract text available
Text: AMD£I Am29LV400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • ■ Single power supply operation ■ — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
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Am29LV400B
8-Bit/256
16-Bit)
29LV400BT80
Am29LV400BB80
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29f400b
Abstract: No abstract text available
Text: PRELIMINARY A M Dii Am29F400B 4 Megabit 512 K X 8-Bit/256 K X 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations ■ Top or bottom boot block configurations
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Am29F400B
8-Bit/256
16-Bit)
29F400
29F400B
29f400b
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION AMDH Am29F004B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • ■ 5.0 Volt single power supply operation ■ Top or bottom boot block configurations available — M inimizes system-level power requirem ents
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Am29F004B
32-pin
29F004B
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Untitled
Abstract: No abstract text available
Text: AMD£1 ADVANCE INFORM ATION Am29F004B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • ■ 5.0 Volt single power supply operation ■ Top or bottom boot block configurations available — Minimizes system-level power requirem ents
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Am29F004B
29F004B
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Untitled
Abstract: No abstract text available
Text: A M D J1 ADVANCE INFORMATION Am29PL160C 16 Megabit 2 M x 8-Bit/I M x 16-Bit CMOS 3.0 Volt-only High Performance Page Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 16 Mbit Page Mode device ■ — Byte (8-bit) or word (16-bit) mode selectable via BYTE# pin
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Am29PL160C
16-bit)
29PL160C
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY AMDH Am29F800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 5.0 Volt-only operation for read, erase, and program operations Top or bottom boot block configurations
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Am29F800B
8-Bit/512
16-Bit)
29F800
29F800B
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION A M D ii Am29PL160C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only High Performance Page Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 16 Mbit Page Mode device ■ — Byte (8-bit) or word (16-bit) mode selectable via BYTE# pin
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Am29PL160C
16-bit)
29PL160C
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sc 6038 ic 8 pins
Abstract: AM29LV400BT-50 L400BB90V AM29LV400BB AMD Am29lv400bt 48XO
Text: AMD£I Am29LV400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • ■ Single power supply operation ■ — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
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Am29LV400B
8-Bit/256
16-Bit)
Am29LV400
Am29LV400BT80
Am29LV400BB80
sc 6038 ic 8 pins
AM29LV400BT-50
L400BB90V
AM29LV400BB
AMD Am29lv400bt
48XO
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Untitled
Abstract: No abstract text available
Text: PR ELIM IN ARY AMDH Am29F004B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • ■ 5.0 Volt single power supply operation ■ Top or bottom boot block configurations available — M inimizes system-level power requirem ents
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Am29F004B
32-pin
29F004B
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