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Microchip Technology Inc 2N6796 MOSFET N-CH 100V 8A TO39
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Microchip Technology Inc 2N6796U MOSFET N-CH 100V 8A 18ULCC
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Microchip Technology Inc JAN2N6796 MOSFET N-CH 100V 8A TO39
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Microchip Technology Inc JAN2N6796U MOSFET N-CH 100V 8A 18ULCC
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Microchip Technology Inc JANTX2N6796 MOSFET N-CH 100V 8A TO205AF
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2N6796 Datasheets (31)

Part	Manufacturer	Description	Datasheet Type	PDF
2N6796	Defense Supply Center Columbus	N-Channel FET	Original	PDF
2N6796	Fairchild Semiconductor	TRANS MOSFET N-CH 100V 8A 3TO-205AF	Original	PDF
2N6796	International Rectifier	HEXFET TRANSISTORS	Original	PDF
2N6796	Intersil	8A, 100V, 0.180 ?, N-Channel Power MOSFET	Original	PDF
2N6796	Microsemi	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V TO-205AF TO-39	Original	PDF
2N6796	Omnirel	100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor	Original	PDF
2N6796	Semelab	N-Channel MOSFET in a Hermetically sealed TO39 Metal Package.	Original	PDF
2N6796	Semelab	TMOS FET Enhancement N-Channel	Original	PDF
2N6796	General Electric	N-channel enhancement-mode power field-effect transistor. 8.0 A, 100V.	Scan	PDF
2N6796	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF
2N6796	International Rectifier	TO-39 Package N-Channel HEXFET	Scan	PDF
2N6796	International Rectifier	TO-39 N-Channel HEXFET Power MOSFETs	Scan	PDF
2N6796	Motorola	European Master Selection Guide 1986	Scan	PDF
2N6796	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF

2N6796	Unknown	FET Data Book	Scan	PDF
2N6796	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2N6796	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2N6796	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N6796	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N6796	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF

2N6796 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2N6796U Abstract: 2N6796 Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS 2N6796 2N6796U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)	Original	PDF	MIL-PRF-19500/557 2N6796 2N6796U 10Vdc, 30Vdc T4-LDS-0047 2N6796U 2N6796
2N6796 Abstract: TB334 Text: 2N6796 Data Sheet December 2001 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET Features • 8A, 100V The 2N6796 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor	Original	PDF	2N6796 2N6796 O-205AF TB334
Untitled Abstract: No abstract text available Text: 2N6796 MECHANICAL DATA Dimensions in mm inches TMOS FET ENHANCEMENT N - CHANNEL 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) FEATURES 0.41 (0.016) 0.53 (0.021) dia. • V(BR)DSS = 100V 5.08 (0.200)	Original	PDF	2N6796 O-205AF)
JANTX2N6796 Abstract: 2N6798 transistor c 557 2N6800 2N6802 JANTX2N6798 JANTX2N6800 JANTX2N6802 JANTXV2N6796 JANTXV2N6798 Text: 2N6796, 2N6796 2N6796 2N6798, JANTX2N6798 JANTXV2N6798 2N6800, JANTX2N6800, JANTXV2N6800 2N6802, JANTX2N6802, JANTXV2N6802 JANTX, JANTXV POWER MOSFET IN TO-205 AF PACKAGE, QUALIFIED TO MIL-PRF-19500/557 100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor	Original	PDF	2N6796, JANTX2N6796 JANTXV2N6796 2N6798, JANTX2N6798 JANTXV2N6798 2N6800, JANTX2N6800, JANTXV2N6800 2N6802, 2N6798 transistor c 557 2N6800 2N6802 JANTX2N6800 JANTX2N6802 JANTXV2N6796 JANTXV2N6798
2N6796 Abstract: No abstract text available Text: 2N6796 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.	Original	PDF	2N6796 O205AF) 11-Oct-02 2N6796
Untitled Abstract: No abstract text available Text: 2N6796U, 2N6798U, 2N6800U, 2N6802U Qualified Levels: JAN, JANTX, JANTXV and JANS* N-CHANNEL MOSFET Compliant Qualified per MIL-PRF-19500/557 DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798U part number is also qualified to the JANS level. These	Original	PDF	2N6796U, 2N6798U, 2N6800U, 2N6802U MIL-PRF-19500/557 2N6798U O-205AF T4-LDS-0047-1,
2N6880 Abstract: 2N6798 JANTXV Text: 2N6796, 2N6798, 2N6800, 2N6802 Qualified Levels: JAN, JANTX, JANTXV and JANS* N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/557 DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798 part number is also qualified to the JANS level. These	Original	PDF	2N6796, 2N6798, 2N6800, 2N6802 MIL-PRF-19500/557 2N6798 T4-LDS-0047, 2N6880 2N6798 JANTXV
2N6796 Abstract: No abstract text available Text: 2N6796 MECHANICAL DATA Dimensions in mm inches TMOS FET TRANSISTOR N – CHANNEL 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 )	Original	PDF	2N6796 2N6796
2N6796 Abstract: TB334 Text: 2N6796 Data Sheet November 1998 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET • 8A, 100V • rDS ON = 0.180Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device	Original	PDF	2N6796 O-205AF 2N6796 TB334
NS3001 Abstract: No abstract text available Text: 2N6796 MECHANICAL DATA Dimensions in mm inches TMOS FET TRANSISTOR N – CHANNEL 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) 0.41 (0.016)	Original	PDF	2N6796 NS3001
2N6796 Abstract: TB334 Text: 2N6796 Data Sheet November 1998 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET Features The 2N6796 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor	Original	PDF	2N6796 2N6796 O-205AF TB334
DD 127 D TRANSISTOR Abstract: transistor DD 127 D 2N6880 2N6798 2N6796 2n6796 jantx 2N6796 JANTXV 2N6802 2n6800 2N6798 JANTXV Text: 2N6796, 2N6798, 2N6800, 2N6802 Qualified Levels: JAN, JANTX, JANTXV and JANS* N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/557 DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798 part number is also qualified to the JANS level. These	Original	PDF	2N6796, 2N6798, 2N6800, 2N6802 MIL-PRF-19500/557 2N6798 2N67n T4-LDS-0047, DD 127 D TRANSISTOR transistor DD 127 D 2N6880 2N6796 2n6796 jantx 2N6796 JANTXV 2N6802 2n6800 2N6798 JANTXV
DD 127 D transistor Abstract: 2n6798u 2N6796U Text: 2N6796U, 2N6798U, 2N6800U, 2N6802U Qualified Levels: JAN, JANTX, JANTXV and JANS* N-CHANNEL MOSFET Compliant Qualified per MIL-PRF-19500/557 DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798U part number is also qualified to the JANS level. These	Original	PDF	2N6796U, 2N6798U, 2N6800U, 2N6802U MIL-PRF-19500/557 2N6798U O-205AF 2N6796, 2N67mensions T4-LDS-0047-1, DD 127 D transistor 2N6796U
Untitled Abstract: No abstract text available Text: 2N6796+JANTXV Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)8.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)25 Minimum Operating Temp (øC)	Original	PDF	2N6796

2n6796 Abstract: MOSFET Text: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINQRELO, NEW JERSEY 07081 U.SA 2N6796 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET Features • 8A, 100V The 2N6796 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications	Original	PDF	2N6796 2N6796 310mA 00A/HS MOSFET
2N6796 Abstract: No abstract text available Text: MOTORCLA SC XSTRS/R F 12E D \| fc.3b?554 QGflbbbS S \| 2N6796 M A X IM U M RATINGS Symbol Value U nit Drain-Source Voltage Vd s s 100 Vdc Drain-Gate Voltage Rq s = 1.0 m fi Vd g r 100 Vdc Vg s ±20 Vdc Id 8.0 32 Rating Gate-Source Voltage CASE 79-05, STYLE 6	OCR Scan	PDF	2N6796 O-20SAF) 2N6796
Untitled Abstract: No abstract text available Text: 4302271 0053701 m b • HAS 2N6796 2 HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 Package Features TO-205AF BOTTOM VIEW • 8.0A, 100V • rDS(on = 0 .1 8 « • SOA is Power-Dissipation Limited SOURCE • Nanosecond Switching Speeds	OCR Scan	PDF	2N6796 O-205AF 2N6796 LH0063
1RF9130 Abstract: jantx2n1800 JAN2N1793 2N6849 2N1915 2n6845 563 j 400v JAN2N3095 T0-209AC IRFF9120 Text: Government/ Space Products bitematinnai ¡¡¡F te S ? H E X F E T , Mil-Qualified N-Channel Types JEDEC 2N6782 2N6784 2N6786 2N6788 2N6790 2N6792 2N6794 2N6796 2N6798 2N6800 2N6802 Part Numbers JANTX JANTX2N6782 JANTX2N6784 JANTX2N6786 JANTX2N6788 JANTX2N6790	OCR Scan	PDF	JANTX2N6782 JANTX2N6784 JANTX2N6786 JANTX2N6788 JANTX2N6790 JANTX2N6792 JANTX2N6794 JANTX2N6796 JANTX2N6798 JANTX2N6800 1RF9130 jantx2n1800 JAN2N1793 2N6849 2N1915 2n6845 563 j 400v JAN2N3095 T0-209AC IRFF9120
2N6796 Abstract: 2N6795 Text: POWER MOSFET TRANSISTORS 100 Volt, 0.18 Ohm N-Channel FEATURES • • • • • ITX 2N6795 JTX, JTXV 2N6796 DESCRIPTION The U nitrode power M O SFET design utilizes the m ost advan ce d technology available. This efficien t design a ch ieves a very low Rosiom and a high transconductance.	OCR Scan	PDF	2N6795 2N6796 2N6796
2N6796 Abstract: No abstract text available Text: 0 3 H A R R 2N6796 I S N-Channel Enhancem ent-M ode Power Field-Effect Transistor A u g u st 1991 Package Features T 0 -2 0 5 A F BOTTOM VIEW • 8.0A, 100V • rDS on = 0 .1 8 0 • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics	OCR Scan	PDF	2N6796 2N6796 LM0063
2N6796 HARRIS Abstract: 2n6796 jantx qpl-19500 2N6756 2N6796 diode332 2N6770 JANTX 2N6897 Text: Standard Power MOSFETs 2N6796 F ile N u m b e r 1594 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 8.0A, 100V ros on = 0.18 fi Features: • SOA is po w e r-d issip ation lim ite d	OCR Scan	PDF	2N6796 2N6796 O-205AF O-2I35AF 2N6800 T0-205AF 2N6796 HARRIS 2n6796 jantx qpl-19500 2N6756 diode332 2N6770 JANTX 2N6897
1N7001 Abstract: 2N6155 4900 SIEMENS 1N7000 BUZ54 2N6759 2n6800 2N6823 BUZ211 IXTP4N90 Text: - 248 - f M € tt € ft * V 2N6755 2N6756 2N6757 2N6758 2N6759 2N6Ï6Û 2N6761 2N6762 2K6763 2N6764 2N6765 2N6766 2N6767 2N6768 2N6769 2N6770 2N6782 2N6784 2Ü6736 2N6788 2N679Û 2N6792 2N6794 2N6796 2K6798 2N6800 2N6802 2N6804 2N6806 2N6845 IR IR IR IR	OCR Scan	PDF	2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 2N6659 O-205AF 1N7001 2N6155 4900 SIEMENS 1N7000 BUZ54 2N6759 2n6800 2N6823 BUZ211 IXTP4N90
2N7003 Abstract: 2N7009 2N7011 2N7073 G50-12C1 2N6755 2N6756 2N6757 2N6758 2N6759 Text: - 248 M - € 2N6755 2N6756 2N6757 2N6758 2N6759 2N6Ï6Û 2N6761 2N6762 2K6763 2N6764 2N6765 2N6766 2N6767 2N6768 2N6769 2N6770 2N6782 2N6784 2Ü6736 2N6788 2N679Û 2N6792 2N6794 2N6796 2K6798 2N6800 2N6802 2N6804 2N6806 2N6845 f- +• /!/ tt € f f t * £ ÍS T a = 2 5 '0	OCR Scan	PDF	2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 O-254AA 2N7003 2N7009 2N7011 2N7073 G50-12C1 2N6759
diode by 26E Abstract: diagram pulsa 2N6796 DIODE ON u1E Text: 3875081 G E SOLID STATE Dll dÎF\| 3fl7SDfil DD1Û41A □ I T ’ S ?-£>? sian a a ra row er M O SFET s 2N6796 File Num ber 1594 Power MOS Field-Effect Transistors p N-Channel Enhancement-Mode Power Field-Effect Transistors	OCR Scan	PDF	GDlfl41fl 2N6796 2N6796 diode by 26E diagram pulsa DIODE ON u1E

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2N6796 Datasheets (31)

2N6796 Datasheets Context Search

2N6796U

2N6796

Untitled

JANTX2N6796

2N6796

Untitled

2N6880

2N6796

2N6796

NS3001

2N6796

DD 127 D TRANSISTOR

DD 127 D transistor

Untitled

2n6796

2N6796

Untitled

1RF9130

2N6796

2N6796

2N6796 HARRIS

1N7001

2N7003

diode by 26E