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Toshiba America Electronic Components HN2D01FTE85LF DIODE ARRAY GP 80V 80MA SC74
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HN2D01FTE85LF	Cut Tape	7,211		1	1 $0.46 10 $0.281 100 $0.46 1000 $0.11891 10000 $0.11891	Buy Now
	HN2D01FTE85LF	Digi-Reel	7,211		1	1 $0.46 10 $0.281 100 $0.46 1000 $0.11891 10000 $0.11891	Buy Now
	HN2D01FTE85LF	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.10051	Buy Now
Mouser Electronics	HN2D01FTE85LF		9,334			1 $0.33 10 $0.224 100 $0.151 1000 $0.105 10000 $0.077	Buy Now
Toshiba America Electronic Components HN2D01FU(TE85L,F) DIODE ARRAY GP 80V 80MA US6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HN2D01FU(TE85L,F)	Cut Tape			1	1 $0.51 10 $0.51 100 $0.51 1000 $0.51 10000 $0.51	Buy Now
Quest Components	HN2D01FU(TE85L,F)		2,276			1 $0.815 10 $0.815 100 $0.815 1000 $0.326 10000 $0.326	Buy Now
EBV Elektronik	HN2D01FU(TE85L,F)			13 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components HN2D01FU,LF Diodes - General Purpose, Power, Switching
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	HN2D01FU,LF		2,068			1 $0.37 10 $0.282 100 $0.17 1000 $0.111 10000 $0.083	Buy Now
Toshiba America Electronic Components HN2D01F(TE85L,F) Diode Switching 85V 0.08A 6-Pin SM T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	HN2D01F(TE85L,F)		3,061		128	1 - 10 - 100 - 1000 $0.1488 10000 $0.14	Buy Now
Chip1Stop	HN2D01F(TE85L,F)	Cut Tape	3,061			1 - 10 $0.441 100 $0.17 1000 $0.114 10000 $0.0964	Buy Now
Toshiba America Electronic Components HN2D01FU,LF(B HN2D01FU,LF(B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	HN2D01FU,LF(B		2,900		556	1 - 10 - 100 - 1000 $0.1315 10000 $0.1277	Buy Now
Quest Components	HN2D01FU,LF(B		2,320			1 $0.76 10 $0.76 100 $0.76 1000 $0.228 10000 $0.152	Buy Now

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HN2D01F Datasheets (12)

Part	Manufacturer	Description	Datasheet Type	PDF
HN2D01F	Toshiba	Diode, Ultra High Speed Switching Application	Original	PDF
HN2D01F	Toshiba	DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)	Scan	PDF
HN2D01F	Toshiba	DIODE	Scan	PDF
HN2D01FTE85LF	Toshiba	Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SW 80V 80MA SM6	Original	PDF
HN2D01FU	Toshiba	HN2D01 - DIODE 0.08 A, 3 ELEMENT, SILICON, SIGNAL DIODE, 1-2T1C, 6 PIN, Signal Diode	Original	PDF
HN2D01FU	Toshiba	Diode, Ultra High Speed Switching Application	Original	PDF
HN2D01FU	Toshiba	Japanese - Diodes	Original	PDF
HN2D01FU	Toshiba	Diodes	Original	PDF
HN2D01FU	Unknown	The Diode Data Book with Package Outlines 1993	Scan	PDF
HN2D01FU	Toshiba	DIODE	Scan	PDF
HN2D01FU	Toshiba	Ultra High Speed Silicon Epitaxial Planar Type Diode	Scan	PDF
HN2D01FU(TE85L,F)	Toshiba	Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, SWITCHING DIODE 80V US6	Original	PDF

HN2D01F Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
HN2D01F Abstract: No abstract text available Text: HN2D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01F Ultra High Speed Switching Application Unit in mm z HN2D01F is composed of 3 independent diodes. z Low forward voltage : VF 3 = 0.98V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance	Original	PDF	HN2D01F HN2D01F
HN2D01F Abstract: No abstract text available Text: HN2D01F 東芝ダイオードシリコンエピタキシャルプレーナ形ダイオード HN2D01F ○ 超高速スイッチング用 z z z z 単位: mm 独立した 3 個のダイオードを内蔵順方向特性が良い。 : VF 3 = 0.98V (標準)	Original	PDF	HN2D01F 100mA HN2D01F
HN2D01FU Abstract: No abstract text available Text: HN2D01FU 東芝ダイオードシリコンエピタキシャルプレーナ形ダイオード HN2D01FU ○ 超高速スイッチング用 z z z z 単位: mm ウルトラスーパーミニ 6 端子パッケージに 3 素子を内臓しています。順方向特性が良い。	Original	PDF	HN2D01FU 100mA HN2D01FU
HN2D01F Abstract: No abstract text available Text: HN2D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01F Ultra High Speed Switching Application Unit in mm l HN2D01F is composed of 3 independent diodes. l Low forward voltage : VF 3 = 0.98V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance	Original	PDF	HN2D01F HN2D01F
HN2D01FU Abstract: No abstract text available Text: HN2D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01FU Unit in mm Ultra High Speed Switching Application l HN2D01FU is composed of 3 independent diodes. l Low forward voltage : VF 3 = 0.98V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.)	Original	PDF	HN2D01FU HN2D01FU 100mA
HN2D01F Abstract: No abstract text available Text: HN2D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01F Ultra High Speed Switching Application Unit in mm HN2D01F is composed of 3 independent diodes. Low forward voltage : VF 3 = 0.98V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance	Original	PDF	HN2D01F HN2D01F
Untitled Abstract: No abstract text available Text: HN2D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01FU Unit: mm Ultra High Speed Switching Application HN2D01FU is composed of 3 independent diodes. z Low forward voltage : VF 3 = 0.98V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance	Original	PDF	HN2D01FU HN2D01FU
Untitled Abstract: No abstract text available Text: HN2D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01FU Unit in mm Ultra High Speed Switching Application HN2D01FU is composed of 3 independent diodes. Low forward voltage : VF 3 = 0.98V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance	Original	PDF	HN2D01FU HN2D01FU 100mA
HN2D01FU Abstract: No abstract text available Text: HN2D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01FU Unit in mm Ultra High Speed Switching Application HN2D01FU is composed of 3 independent diodes. z Low forward voltage : VF 3 = 0.98V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance	Original	PDF	HN2D01FU HN2D01FU
HN2D01FU Abstract: No abstract text available Text: HN2D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01FU Unit in mm Ultra High Speed Switching Application z HN2D01FU is composed of 3 independent diodes. z Low forward voltage : VF 3 = 0.98V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.)	Original	PDF	HN2D01FU HN2D01FU
HN2D01F Abstract: No abstract text available Text: HN2D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01F Ultra High Speed Switching Application Unit in mm z HN2D01F is composed of 3 independent diodes. z Low forward voltage : VF 3 = 0.98V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance	Original	PDF	HN2D01F HN2D01F
Untitled Abstract: No abstract text available Text: TOSHIBA HN2D01F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN2D01F ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm • HN2D01F is composed of 3 independent diodes. + 0.2 2.8 - 0.3 • Low Forward Voltage 1 . 6 - 0.1 • Fast Reverse Recovery Time : trr= 1.6ns Typ.	OCR Scan	PDF	HN2D01F HN2D01F 961001EAA2'
Untitled Abstract: No abstract text available Text: SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. + 0.2 2 .8 -0 3 + 0.2 . HN2D01F is composed of 3 independent diodes, . T.ow Forward Voltage 1.6 - 0.1 : Vp=0.98V Typ. D6 . Fast Reverse Recovery Time : trr= 1.6ns (Typ.) . Small. Total Capacitance	OCR Scan	PDF	HN2D01F HN2D01F
Untitled Abstract: No abstract text available Text: SILICON EPITAXIAL PLANAR TY P E HN2D01FU U LTRA HIGH SPEED SW IT C H IN G A PPLIC A TIO N . • • • • HN2D01FU is composed of 3 Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance PIN A S S IG N M E N T TOP V IEW 6 5 1rQ i X 1 independent diodes.	OCR Scan	PDF	HN2D01FU HN2D01FU 100mA if--H05 01/iF

Untitled Abstract: No abstract text available Text: TOSHIBA HN2D01F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN2D01F ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm • HN2D01F is composed of 3 independent diodes. • Low Forward Voltage • Fast Reverse Recovery Time : trr= 1.6ns Typ. • Small Total Capacitance	OCR Scan	PDF	HN2D01F HN2D01F 961001EAA2'
HN2D01F Abstract: lu2b Text: TOSHIBA HN2D01F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN2D01F ULTRA HIGH SPEED SWITCHING APPLICATION. • +0.2 2.8 - 0.3 +0.2 1.6-0.1 H N 2D01F is composed of 3 independent diodes. • Low Forward Voltage • F a st Reverse Recovery Time : trr = 1.6ns Typ.	OCR Scan	PDF	HN2D01F HN2D01F 961001EAA2' lu2b
Untitled Abstract: No abstract text available Text: TOSHIBA HN2D01 FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 2 D 0 1 FU ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm • HN2D01FU is composed of 3 independent diodes. • Low Forward Voltage • Fast Reverse Recovery Time : trr= 1.6ns Typ. •	OCR Scan	PDF	HN2D01 HN2D01FU
diode Z47 Abstract: z43 diode Z5.6 Z3.3 S360 DIODE 02CZ5 diode Z27 S368 diode zener z6 1s diode Text: Diodes Signal Diode for General Purpose R atino V r V lo im A ) Switching Diode Schottky Barrier Diode Zener Diode use S-M IN I (SOT-23MOD) BO 80 — — _ — HN2D01FU _ 80 80 _ — — — HN2D02FU BO 80 80 — ssc SS M use 1SS362 1S S368 USM — 1S S 352	OCR Scan	PDF	HN2D01FU HN2D02FU OT-23MOD) 02CZ5 diode Z47 z43 diode Z5.6 Z3.3 S360 DIODE diode Z27 S368 diode zener z6 1s diode
Untitled Abstract: No abstract text available Text: TOSHIBA HN2D01 FU T O S H IB A D IO D E SILICO N EPITA X IA L PLA N A R TYPE H N 2 D 0 1 FU ULTRA H IG H SPEED S W IT C H IN G A P P L IC A T IO N . Unit in mm • HN2D01FU is composed of 3 independent diodes. • Low Forward Voltage • F ast Reverse Recovery Time : tr r = 1.6ns Typ.	OCR Scan	PDF	HN2D01 HN2D01FU
1213-00N Abstract: HN2D01F toshiba diode 3D Text: TOSHIBA HN2D01F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN2D01F Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • HN2D01F is composed of 3 independent diodes. Low Forward Voltage : Vp 3 = 0.98V (Typ.) Fast Reverse Recovery Time : trr= 1.6ns (Typ.)	OCR Scan	PDF	HN2D01F HN2D01F 961001EAA2' 1213-00N toshiba diode 3D
Untitled Abstract: No abstract text available Text: TOSHIBA HN2D01FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H mN ? mnm r n i F 11 'm • ■ ULTRA HIGH SPEED 5WITCHING APPLICATION. Unit in mm HN2D01FU is composed of 3 independent diodes. TT Low Forward Voltage A A m T /m • Fast Reverse Recovery Time : trr = 1.6ns Typ.	OCR Scan	PDF	HN2D01FU HN2D01FU 01//F
Untitled Abstract: No abstract text available Text: TOSHIBA HN2D01F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE h N1 n n 1 F • ■ m 'm mmr w ■ ■ Unit in mm ULTRA HIGH SPEED SW ITCHING APPLICATIO N. • • • • HN2D01F is composed of 3independent diodes. Low Forward Voltage : V f 3 = 0.98V (Typ.)	OCR Scan	PDF	HN2D01F HN2D01F a--25 961001EAA2'
1S1585 Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241 Text: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80	OCR Scan	PDF	OT-23MOD, OT-143MOD. 1S1585 107YP 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
2N3904 331 transistor Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737 Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 2SC1815(L) — 2SC2995 — * 2N3904 — 2SA1245 167 2SC1923 — 2SC2996 266 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272	OCR Scan	PDF	2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737

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HN2D01F Price and Stock

Toshiba America Electronic Components HN2D01FTE85LF

Toshiba America Electronic Components HN2D01FU(TE85L,F)

Toshiba America Electronic Components HN2D01FU,LF

Toshiba America Electronic Components HN2D01F(TE85L,F)

Toshiba America Electronic Components HN2D01FU,LF(B

HN2D01F Datasheets (12)

HN2D01F Datasheets Context Search

HN2D01F

HN2D01F

HN2D01FU

HN2D01F

HN2D01FU

HN2D01F

Untitled

Untitled

HN2D01FU

HN2D01FU

HN2D01F

Untitled

Untitled

Untitled

Untitled

HN2D01F

Untitled

diode Z47

Untitled

1213-00N

Untitled

Untitled

1S1585

2N3904 331 transistor